Patent application number | Description | Published |
20130031449 | System for Linking to Documents with Associated Annotations - An annotation system includes first annotation data for annotating a manifestation of a first instance of a first XML document. The first instance of the first XML document is served by a document system. The first annotation data includes a first XML document identifier for the first XML document. The first annotation data is uniquely identified by a first annotation data identifier. The document system is configured to respond to a request containing the first XML document identifier with a manifestation of a second instance of the first XML document. The annotation system: (A) receives a request containing the first annotation data identifier; (B) issues a request containing the first XML document identifier to the document system; and (C) in response to the request containing the first annotation data identifier, manifests the first annotation data in connection with a manifestation of a second instance of the XML document. | 01-31-2013 |
20130031453 | System for Annotating Documents Served by a Document System without Functional Dependence on the Document System - A first instance of a first XML document is served by a document server component of a document system. An annotation system that is functionally independent of the document system semantically analyzes content and structure of the first instance of the first XML document to identify a first instance of a first target for first annotation content, wherein the first target is not text. The annotation system also generates target locating data for locating a second instance of the first target in a second instance of the first XML document. The annotation system stores the target locating data. | 01-31-2013 |
20130031454 | System for Programmatically Accessing Document Annotations - An annotation system receives a request from a requester to perform an operation on first annotation data for annotating a first instance of a first XML document. The operation is at least one of a create, read, update, and delete operation. The first instance of the first XML document is served by a document server component of a document system. The document system is functionally independent of the annotation system. The request explicitly addresses the first annotation data by means of an application programming interface in the annotation system. The annotation system performs the operation on the first annotation data in response to the request. | 01-31-2013 |
20130031455 | System for Linking to Documents with Associated Annotations - An annotation system includes first annotation data for annotating a manifestation of a first instance of a first XML document. The first instance of the first XML document is served by a document system. The first annotation data includes a first XML document identifier for the first XML document. The first annotation data is uniquely identified by a first annotation data identifier. The document system is configured to respond to a request containing the first XML document identifier with a manifestation of a second instance of the first XML document. The annotation system: (A) receives a request containing the first annotation data identifier; (B) issues a request containing the first XML document identifier to the document system; and (C) in response to the request containing the first annotation data identifier, manifests the first annotation data in connection with a manifestation of a second instance of the XML document. | 01-31-2013 |
20130031457 | System for Creating and Editing Temporal Annotations of Documents - An annotation system receives a first annotation input representing first annotation content for temporally annotating a first instance of a first target in a first instance of a first XML document. The first instance of the first XML document is served by a document server component of a document system. The annotation system is functionally independent of the document system. The annotation system temporally annotates the first instance of the first target with the first annotation content. The annotation subsequently manifests the first annotation content in connection with a manifestation of a second instance of the first target in a manifestation of a second instance of the first XML document served by the document server. | 01-31-2013 |
Patent application number | Description | Published |
20090234163 | Method for producing an ethylamine - Processes comprising: (a) providing a first reactant comprising a bioethanol; and (b) reacting the first reactant with a second reactant comprising a component selected from the group consisting of ammonia, primary amines, secondary amines and mixtures thereof, in the presence of hydrogen and a catalytically effective amount of a heterogeneous hydrogenation/dehydrogenation catalyst to form an ethylamine; wherein the catalyst has been activated at a temperature of 100 to 500° C. for at least 25 minutes; wherein prior to activation the catalyst comprises: (i) 20 to 65% by weight of a support material comprising one or both of zirconium dioxide (ZrO | 09-17-2009 |
20100130781 | METHOD FOR THE PRODUCTION OF N,N-DIMETHYLACETAMIDE (DMAC) - A process for preparing N,N-dimethylacetamide (DMAC) by continuously reacting methyl acetate (MeOAc) with dimethylamine (DMA) in the presence of a basic catalyst, wherein MeOAc is used in the form of a methanolic solution and the continuous distillative workup is effected in such a way that methanol and any other low boilers are initially removed overhead in a column A and the bottom effluent of column A is fed to a column B in which DMAC is removed via a side draw a purity of ≧99.7% by weight. | 05-27-2010 |
20110082316 | METHOD FOR THE PRODUCTION OF N,N-DIMETHYLACETAMIDE (DMAC) - A process for preparing N,N-dimethylacetamide (DMAC) by continuously reacting methyl acetate (MeOAc) with dimethylamine (DMA) in the presence of a basic catalyst, wherein MeOAc is used in the form of a methanolic solution which is obtained as a byproduct in the preparation of polyTHF by transesterifying polyTHF diacetate with methanol. | 04-07-2011 |
Patent application number | Description | Published |
20080207949 | Method For The Production Of N,N-Dimethylacetamide (Dmac) - A process for preparing N,N-dimethylacetamide (DMAC) by continuously reacting methyl acetate (MeOAc) with dimethylamine (DMA) in the presence of a basic catalyst, wherein MeOAc is used in the form of a methanolic solution which is obtained as a by-product in the preparation of polyTHF by transesterifying polyTHF diacetate with methanol. | 08-28-2008 |
20090234163 | Method for producing an ethylamine - Processes comprising: (a) providing a first reactant comprising a bioethanol; and (b) reacting the first reactant with a second reactant comprising a component selected from the group consisting of ammonia, primary amines, secondary amines and mixtures thereof, in the presence of hydrogen and a catalytically effective amount of a heterogeneous hydrogenation/dehydrogenation catalyst to form an ethylamine; wherein the catalyst has been activated at a temperature of 100 to 500° C. for at least 25 minutes; wherein prior to activation the catalyst comprises: (i) 20 to 65% by weight of a support material comprising one or both of zirconium dioxide (ZrO | 09-17-2009 |
20100130781 | METHOD FOR THE PRODUCTION OF N,N-DIMETHYLACETAMIDE (DMAC) - A process for preparing N,N-dimethylacetamide (DMAC) by continuously reacting methyl acetate (MeOAc) with dimethylamine (DMA) in the presence of a basic catalyst, wherein MeOAc is used in the form of a methanolic solution and the continuous distillative workup is effected in such a way that methanol and any other low boilers are initially removed overhead in a column A and the bottom effluent of column A is fed to a column B in which DMAC is removed via a side draw a purity of ≧99.7% by weight. | 05-27-2010 |
20110082316 | METHOD FOR THE PRODUCTION OF N,N-DIMETHYLACETAMIDE (DMAC) - A process for preparing N,N-dimethylacetamide (DMAC) by continuously reacting methyl acetate (MeOAc) with dimethylamine (DMA) in the presence of a basic catalyst, wherein MeOAc is used in the form of a methanolic solution which is obtained as a byproduct in the preparation of polyTHF by transesterifying polyTHF diacetate with methanol. | 04-07-2011 |
Patent application number | Description | Published |
20110121384 | TRENCH-GATE SEMICONDUCTOR DEVICE - A trench-gate semiconductor device is disclosed, in which the p-layer ( | 05-26-2011 |
20130146967 | Trench-Gate Resurf Semiconductor Device and Manufacturing Method - A trench-gate device with lateral RESURF pillars has an additional implant beneath the gate trench. The additional implant reduces the effective width of the semiconductor drift region between the RESURF pillars, and this provides additional gate shielding which improves the electrical characteristics of the device. | 06-13-2013 |
20130146972 | SEMICONDUCTOR DEVICE HAVING ISOLATION TRENCHES - A semiconductor uses an isolation trench, and one or more additional trenches to those required for isolation are provided. These additional trenches can be connected between a transistor gate and the drain to provide additional gate-drain capacitance, or else they can be used to form series impedance coupled to the transistor gate. These measures can be used separately or in combination to reduce the switching speed and thereby reduce current spikes. | 06-13-2013 |
20130181272 | IC DIE, SEMICONDUCTOR PACKAGE, PRINTED CIRCUIT BOARD AND IC DIE MANUFACTURING METHOD - In an example embodiment, an integrated circuit (IC) comprises a substrate separating one of a source and drain from a semiconductor region. The IC comprises a vertical transistor including the source or drain. A gate electrode is formed in a trench extending into the semiconductor region; the gate electrode is electrically insulated from the semiconductor region by a dielectric lining in the trench and the other of said source or drain in the semiconducting region. An insulating trench terminates the vertical transistor; a vertical capacitor region (V-Cap) is adjacent to the vertical transistor; a first capacitor plate of the V-Cap comprises the source or drain separated from the semiconductor region by the substrate; the V-Cap further comprises at least one trench extending into the semiconductor region; the at least one trench comprises an electrically insulating liner material insulating a conductive material defining a second capacitor plate separated from the first capacitor plate. | 07-18-2013 |
Patent application number | Description | Published |
20100320532 | TRENCH GATE MOSFET AND METHOD OF MANUFACTURING THE SAME - A Trench gate MOS field-effect transistor having a narrow, lightly doped, region extending from a channel accommodating region ( | 12-23-2010 |
20120037980 | EDGE TERMINATION REGION - An isolation region ( | 02-16-2012 |
20120070983 | SEMICONDUCTOR DEVICE WITH GATE TRENCH - A method of manufacturing a semiconductor device is presented. The device has: a gate terminal formed from polysilicon and covered by an insulation layer; and a plug extending through an insulation layer to provide an electrical connection to the gate trench. A metal layer is deposited to cover at least a portion of the insulation layer. The metal layer is then etched to remove the metal layer from above the plug. | 03-22-2012 |
20140145208 | CASCODED SEMICONDUCTOR DEVICES - A cascoded power semiconductor circuit has a clamp circuit between the source and gate of a gallium nitride or silicon carbide FET to provide avalanche protection for the cascode MOSFET transistor. | 05-29-2014 |
20140167822 | CASCODE CIRCUIT - A cascode circuit arrangement has a low voltage MOSFET and a depletion mode power device mounted on a substrate (for example a ceramic substrate), which can then be placed in a semiconductor package. This enables inductances to be reduced, and can enable a three terminal packages to be used if desired. | 06-19-2014 |
20140220749 | A VERTICAL MOSFET TRANSISTOR WITH A VERTICAL CAPACITOR REGION - Consistent with an example embodiment, a method of may be provided to manufacture a vertical capacitor region that comprises a plurality of said trenches, wherein the portions of the semiconductor region in between said trenches comprise an impurity. This allows for the trenches to be placed in closer vicinity to each other, thus improving the capacitance per unit area ratio. The total capacitance of the device is defined by two series components, that is, the capacitance across the dielectric liner, and the depletion capacitance of the silicon next to the trench. An increase of the voltage on the capacitor increases the depletion in the silicon and the depletion capacitance as a result, such that the overall capacitance is reduced. This effect may be countered by minimizing the depletion region which may be achieved by ensuring that the silicon adjacent to the capacitor is as highly doped as possible. | 08-07-2014 |
20140292287 | CASCODE SEMICONDUCTOR DEVICE - A semiconductor device, comprising first and second field effect transistors arranged in a cascode configuration: wherein the first field effect transistor is a depletion mode transistor; and wherein the second field effect transistor comprises a first source to gate capacitance and a second additional source to gate capacitance connected in parallel to the first source to gate capacitance. A power factor correction (PFC) circuit comprising the semiconductor device. A power supply comprising the PFC circuit. | 10-02-2014 |