Patent application number | Description | Published |
20080205456 | Laser uses for single-crystal CVD Diamond - The present invention is directed to new laser-related uses for single-crystal diamonds produced by chemical vapor deposition. One such use is as a heat sink for a laser; another such use is as a frequency converter. The invention is also directed to a χ | 08-28-2008 |
20090110626 | Low Pressure Method of Annealing Diamonds - The present invention relates to method of improving the optical properties of diamond at low pressures and more specifically to a method of producing a CVD diamond of a desired optical quality which includes growing CVD diamond and raising the temperature of the CVD diamond from about 1400° C. to about 2200° C. at a pressure of from about 1 to about 760 torr outside the diamond stability field in a reducing atmosphere for a time period of from about 5 seconds to about 3 hours. | 04-30-2009 |
20100012022 | Diamond Uses/Applications Based on Single-Crystal CVD Diamond Produced at Rapid Growth Rate - The present invention is directed to new uses and applications for colorless, single-crystal diamonds produced at a rapid growth rate. The present invention is also directed to methods for producing single crystal diamonds of varying color at a rapid growth rate and new uses and applications for such single-crystal, colored diamonds. | 01-21-2010 |
20100104494 | Enhanced Optical Properties of Chemical Vapor Deposited Single Crystal Diamond by Low-Pressure/High-Temperature Annealing - The method of improving the optical properties of single crystal CVD diamond which comprises annealing the crystals at a temperature of up to 2200° C. and a pressure below 300 torr. | 04-29-2010 |
20100123098 | ULTRATOUGH SINGLE CRYSTAL BORON-DOPED DIAMOND - The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m | 05-20-2010 |
20100126406 | Production of Single Crystal CVD Diamond at Rapid Growth Rate - In a method of producing diamonds by microwave plasma-assisted chemical vapor deposition which comprises providing a substrate and establishing a microwave plasma ball in an atmosphere comprising hydrogen, a carbon source and oxygen at a pressure and temperature sufficient to cause the deposition of diamond on said substrate, the improvement wherein the diamond is deposited under a pressure greater than 400 torr at a growth rate of at least 200 μm/hr. from an atmosphere which is either essentially free of nitrogen or includes a small amount of nitrogen. | 05-27-2010 |
20110280790 | Production of Large, High Purity Single Crystal CVD Diamond - The invention relates to single crystal diamond with optical quality and methods of making the same. The diamond possesses an intensity ratio of the second-order. Raman peak to the fluorescence background of around 5 or greater. | 11-17-2011 |