Patent application number | Description | Published |
20090309129 | Semiconductor ESD Device and Method of Making Same - A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included is a plurality of third device regions having a sub-region of the first conductivity type and a sub-region of the second conductivity type disposed on the second device region. The first regions and second regions are distributed such that the third regions are not directly adjacent to each other. A fourth device region of the first conductivity type adjacent to the second device region and a fifth device region of the second conductivity type disposed within the fourth device region are also included. | 12-17-2009 |
20100090283 | Electro Static Discharge Protection Device - A semiconductor device for protecting against an electro static discharge is disclosed. In one embodiment, the semiconductor device includes a first low doped region disposed in a substrate, a first heavily doped region disposed within the first low doped region, the first heavily doped region comprising a first conductivity type, and the first low doped region comprising a second conductivity type, the first and the second conductivity types being opposite, the first heavily doped region being coupled to a node to be protected. The semiconductor device further includes a second heavily doped region coupled to a first power supply potential node, the second heavily doped region being separated from the first heavily doped region by a portion of the first low doped region, and a second low doped region disposed adjacent the first low doped region, the second low doped region comprising the first conductivity type. A third heavily doped region is disposed in the second low doped region, the third heavily doped region comprising the second conductivity type and being coupled to a second power supply potential node. | 04-15-2010 |
20100140712 | Electro Static Discharge Clamping Device - Electrostatic discharge clamp devices are described. In one embodiment, the semiconductor device includes a first transistor, the first transistor including a first source/drain and a second source/drain, the first source/drain coupled to a first potential node, the second source/drain coupled to a second potential node. The device further includes a OR logic block, a first input of the OR logic block coupled to the first potential node through a capacitor, the first input of the OR logic block being coupled to the second potential node through a resistor, and a second input of the OR logic block coupled to a substrate pickup node of the first transistor. | 06-10-2010 |
20100207161 | Device and Method for Coupling First and Second Device Portions - This disclosure relates to devices and methods relating to coupled first and second device portions. | 08-19-2010 |
20100208405 | Semiconductor ESD Device and Method of Making Same - A semiconductor device includes an ESD device region disposed within a semiconductor body of a first semiconductor type, an isolation region surrounding the ESD device region, a first doped region of a second conductivity type disposed at a surface of the semiconductor body within the ESD region, and a second doped region of the first conductivity type disposed between the semiconductor body within the ESD region and at least a portion of the first doped region, where the doping concentration of the second doped region is higher than the semiconductor body. A third doped region of the second semiconductor type is disposed on the semiconductor body and a fourth region of the first conductivity type is disposed over the third doped region. A fifth doped region of the second conductivity type is disposed on the semiconductor body. A trigger device and an SCR is formed therefrom. | 08-19-2010 |
20100321843 | Semiconductor ESD Device and Method of Making Same - A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included is a plurality of third device regions having a sub-region of the first conductivity type and a sub-region of the second conductivity type disposed on the second device region. The first regions and second regions are distributed such that the third regions are not directly adjacent to each other. A fourth device region of the first conductivity type adjacent to the second device region and a fifth device region of the second conductivity type disposed within the fourth device region are also included. | 12-23-2010 |
20110180875 | ESD Protection Device and Method - An ESD protection device includes an MOS transistor with a source region, drain region and gate region. A node designated for ESD protection is electrically coupled to the drain. A diode is coupled between the gate and source, wherein the diode would be reverse biased if the MOS transistor were in the active operating region. | 07-28-2011 |
20110241731 | Electro Static Discharge Clamping Device - Electrostatic discharge clamp devices are described. In one embodiment, the semiconductor device includes a first transistor, the first transistor including a first source/drain and a second source/drain, the first source/drain coupled to a first potential node, the second source/drain coupled to a second potential node. The device further includes a OR logic block, a first input of the OR logic block coupled to the first potential node through a capacitor, the first input of the OR logic block being coupled to the second potential node through a resistor, and a second input of the OR logic block coupled to a substrate pickup node of the first transistor. | 10-06-2011 |
20120099229 | Semiconductor ESD Device and Method - An embodiment semiconductor device has a first device region disposed on a second device region within an ESD device region disposed within a semiconductor body. Also included is a third device region disposed on the second device region, a fourth device region adjacent to the second device region, a fifth device region disposed within the fourth device region, and a sixth device region adjacent to the fourth device region. The first and fourth regions have a first semiconductor type, and the second, third, fifth and sixth regions have a second conductivity type opposite the first conductivity type. An interface between the fourth device region and the sixth device region forms a diode junction. The first, second, fourth and fifth device regions form a silicon controlled rectifier. | 04-26-2012 |
20120176710 | Semiconductor ESD Circuit and Method - In an embodiment, an electrostatic discharge (ESD) circuit for providing protection between a first node and a second node includes a first MOS device having a first source/drain coupled to a first node, and a second source/drain coupled to an intermediate node. The ESD circuit also includes a first capacitor coupled between a gate of the first MOS device and the first node, a first resistor coupled between the gate of the first MOS device the intermediate node, a second MOS device having a first source/drain coupled to the intermediate node, and a second source/drain coupled to the second node, a second capacitor coupled between a gate of the second MOS device and the first node, and a second resistor coupled between the gate of the second MOS device and the second node. | 07-12-2012 |
20120199878 | Drain Extended Field Effect Transistors and Methods of Formation Thereof - In an embodiment of the invention, a semiconductor device includes a first region having a first doping type, a channel region having the first doping type disposed in the first region, and a retrograde well having a second doping type. The second doping type is opposite to the first doping type. The retrograde well has a shallower layer with a first peak doping and a deeper layer with a second peak doping higher than the first peak doping. The device further includes a drain region having the second doping type over the retrograde well. An extended drain region is disposed in the retrograde well, and couples the channel region with the drain region. An isolation region is disposed between a gate overlap region of the extended drain region and the drain region. A length of the drain region is greater than a depth of the isolation region. | 08-09-2012 |
20120218671 | Semiconductor ESD Device and Method of Making Same - A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included is a plurality of third device regions having a sub-region of the first conductivity type and a sub-region of the second conductivity type disposed on the second device region. The first regions and second regions are distributed such that the third regions are not directly adjacent to each other. A fourth device region of the first conductivity type adjacent to the second device region and a fifth device region of the second conductivity type disposed within the fourth device region are also included. | 08-30-2012 |
20130264645 | Diode Biased ESD Protection Device and Method - An ESD protection device includes an MOS transistor with a source region, drain region and gate region. A node designated for ESD protection is electrically coupled to the drain. A diode is coupled between the gate and source, wherein the diode would be reverse biased if the MOS transistor were in the active operating region. | 10-10-2013 |
20130264646 | Diode Biased ESD Protection Device and Method - An ESD protection device includes an MOS transistor with a source region, drain region and gate region. A node designated for ESD protection is electrically coupled to the drain. A diode is coupled between the gate and source, wherein the diode would be reverse biased if the MOS transistor were in the active operating region. | 10-10-2013 |
20140015010 | Drain Extended Field Effect Transistors and Methods of Formation Thereof - In an embodiment of the invention, a semiconductor device includes a first region having a first doping type, a channel region having the first doping type disposed in the first region, and a retrograde well having a second doping type. The second doping type is opposite to the first doping type. The retrograde well has a shallower layer with a first peak doping and a deeper layer with a second peak doping higher than the first peak doping. The device further includes a drain region having the second doping type over the retrograde well. An extended drain region is disposed in the retrograde well, and couples the channel region with the drain region. An isolation region is disposed between a gate overlap region of the extended drain region and the drain region. A length of the drain region is greater than a depth of the isolation region. | 01-16-2014 |
20140145265 | High Voltage Semiconductor Devices - In one embodiment, the semiconductor device includes a first source of a first doping type disposed in a substrate. A first drain of the first doping type is disposed in the substrate. A first gate region is disposed between the first source and the first drain. A first channel region of a second doping type is disposed under the first gate region. The second doping type is opposite to the first doping type. A first extension region of the first doping type is disposed between the first gate and the first drain. The first extension region is part of a first fin disposed in or over the substrate. A first isolation region is disposed between the first extension region and the first drain. A first well region of the first doping type is disposed under the first isolation region. The first well region electrically couples the first extension region with the first drain. | 05-29-2014 |
20150144996 | Semiconductor ESD Device and Method of Making Same - A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included is a plurality of third device regions having a sub-region of the first conductivity type and a sub-region of the second conductivity type disposed on the second device region. The first regions and second regions are distributed such that the third regions are not directly adjacent to each other. A fourth device region of the first conductivity type adjacent to the second device region and a fifth device region of the second conductivity type disposed within the fourth device region are also included. | 05-28-2015 |
20150229126 | Semiconductor ESD Circuit and Method - In an embodiment, an electrostatic discharge (ESD) circuit for providing protection between a first node and a second node includes a first MOS device having a first source/drain coupled to a first node, and a second source/drain coupled to an intermediate node. The ESD circuit also includes a first capacitor coupled between a gate of the first MOS device and the first node, a first resistor coupled between the gate of the first MOS device the intermediate node, a second MOS device having a first source/drain coupled to the intermediate node, and a second source/drain coupled to the second node, a second capacitor coupled between a gate of the second MOS device and the first node, and a second resistor coupled between the gate of the second MOS device and the second node. | 08-13-2015 |
20150340442 | Drain Extended Field Effect Transistors and Methods of Formation Thereof - In an embodiment of the invention, a semiconductor device includes a first region having a first doping type, a channel region having the first doping type disposed in the first region, and a retrograde well having a second doping type. The second doping type is opposite to the first doping type. The retrograde well has a shallower layer with a first peak doping and a deeper layer with a second peak doping higher than the first peak doping. The device further includes a drain region having the second doping type over the retrograde well. An extended drain region is disposed in the retrograde well, and couples the channel region with the drain region. An isolation region is disposed between a gate overlap region of the extended drain region and the drain region. A length of the drain region is greater than a depth of the isolation region. | 11-26-2015 |
20150357322 | Diode Biased ESD Protection Devices and Methods - An ESD protection device includes an MOS transistor with a source region, drain region and gate region. A node designated for ESD protection is electrically coupled to the drain. A diode is coupled between the gate and source, wherein the diode would be reverse biased if the MOS transistor were in the active operating region. | 12-10-2015 |
20160071833 | Diode Biased ESD Protection Device and Method - An ESD protection device includes an MOS transistor with a source region, drain region and gate region. A node designated for ESD protection is electrically coupled to the drain. A diode is coupled between the gate and source, wherein the diode would be reverse biased if the MOS transistor were in the active operating region. | 03-10-2016 |
Patent application number | Description | Published |
20090293361 | ADJUSTMENT OF A MOTORIZED POSITIONING DEVICE - A method for calibrating a powered actuator for use in a vehicle is provided, with regard to an end position of an actuating element which is easy to achieve and conserves easily damaged mechanical components of the actuator made from plastic, rubber or similar. According to an example embodiement, in a calibrating step, the actuator is operated with recording and analysis of an actuation speed measured parameter such that the actuating element is moved in the direction of the end position and reaching the end position is recognized when the value of the actuation speed measured parameter reaches or drops below a given threshold. A temperature parameter characterizing the temperature of the actuator is evaluated before or during the calibration process. The calibration step is then only carried out if the value of the temperature parameter does not exceed an upper temperature limit. An actuator suitable for carrying out said method is also disclosed. | 12-03-2009 |
20110270558 | Method and Apparatus for Processing a Motor Signal, Having Current Ripple, of a DC Motor - In order to process a motor signal (I | 11-03-2011 |
20130018551 | METHOD FOR OPERATING THE ON-BOARD ELECTRICAL POWER SYSTEM OF A MOTOR VEHICLEAANM Fuchs; ThorstenAACI HallstadtAACO DEAAGP Fuchs; Thorsten Hallstadt DEAANM Hering; MatthiasAACI ForchheimAACO DEAAGP Hering; Matthias Forchheim DEAANM Wuerstlein; HolgerAACI Zeil am MainAACO DEAAGP Wuerstlein; Holger Zeil am Main DEAANM Schindhelm; ThomasAACI Neahaus-SchierschnitzAACO DEAAGP Schindhelm; Thomas Neahaus-Schierschnitz DEAANM Russ; DetlefAACI EbersdorfAACO DEAAGP Russ; Detlef Ebersdorf DE - A method for operating the electrical system of a motor vehicle having a control unit with an operating mode and an energy-saving standby mode is described. A wake-up operator control event is detected by a sensor and has an associated time interval from the preceding wake-up operator control event. The time interval is ascertained when a wake-up operator control event is detected, and the control unit is woken up or not woken up. Each wake-up operator control event has an associated switch-off indicator which is ascertained each time a wake-up operator control event is detected, and the control unit is woken up or not woken up as a function of the level of the switch-off indicator with reference to a switch-off threshold. A change in the current switch-off indicator relative to the preceding switch-off indicator is all the greater the smaller the current time interval. | 01-17-2013 |
20130131917 | METHOD FOR THE SENSOR DETECTION OF AN OPERATOR CONTROL EVENT - A method for detection of a control event by a sensor arrangement having at least one sensor element and a sensor controller is described. The sensor controller digitizes sensor signals into sensor measured values. An operator control event is produced by a user and a first coarse evaluation for a sign of operator control is performed and a predetermined number of sensor measured values are progressively buffer-stored in a buffer store wherein detection of a sign of operator control initiates a fine evaluation of the sensor measured values to verify the occurrence of an operator control event at an initiation time. The fine evaluation is based on the buffer-stored sensor measured values and on subsequent sensor measured values, so that the fine evaluation includes sensor measured values both before and after the initiation time. | 05-23-2013 |
20130271059 | PRECISE ASCERTAINMENT OF ACTUATING POSITION FOR A MOTOR-DRIVEN VEHICLE PART - In order to ascertain the actuating position of a vehicle part that is moved by an electric actuating motor via an actuating mechanism, an angle of rotation correlating with the number of motor shaft rotations during the actuation process or a motor signal correlated therewith are ascertained during an actuation process. An actuating position measure for the actuating position of the vehicle part is derived from the angle of rotation or the motor signal correlating therewith. During this process, an unloaded angle of rotation, through which the motor shaft rotates during an initial no-load phase of the actuation process without motion of the vehicle part is compensated by a predetermined correction term. The correction term is changed according to a stored dependency on a characteristic quantity for the age of the actuating mechanism. | 10-17-2013 |
20140324273 | METHOD FOR GENERATING AN OPERATOR CONTROL MESSAGE WHEN AN OPERATOR CONTROL EVENT OCCURS - The invention relates to a method for detecting an operator control event using a sensor arrangement having at least one proximity sensor and a sensor controller, the operator control event being generated by a user of a vehicle. A first coarse evaluation of the sensor measured values for the occurrence of an operator control sign is carried out, that a predetermined number of the respective last sensor measured values of at least one sensor element are buffered, that the detection of an operator control sign triggers a fine evaluation of the sensor measured values for verifying the occurrence of an operator control event at a triggering time, and that the fine evaluation is based on the buffered sensor measured values and on the temporally subsequent sensor measured values, with the result that sensor measured values both before and after the triggering time are included in the fine evaluation. | 10-30-2014 |
20150077141 | Capacitive sensor for an anti-collision apparatus, and capacitive sensor - A capacitive sensor is configured for detecting an object, in particular for detecting a collision in the case of a movable vehicle part, and an anti-collision apparatus has such a sensor. The sensor has an electrode arrangement with at least one transmitting electrode and at least one or more receiving electrodes. The sensor has a signal generation circuit which is connected upstream of the at least one transmitting electrode. The signal generation circuit generates a transmission signal in the form of a square-wave pulse signal corresponding directly to a pseudo-random bit string. | 03-19-2015 |
20150219703 | CIRCUIT ARRANGEMENT AND METHOD FOR DETECTING A CAPACITANCE AND/OR A CHANGE IN A CAPACITANCE OF A CAPACITIVE COMPONENT - The present invention relates to a circuit arrangement for detecting a capacitance of a capacitive component and/or a change in the capacitance of a capacitive component, which circuit arrangement comprises, inter alia a monostable flipflop controllable by a control signal and having at least two inputs and one output, wherein a first input of the flipflop is provided for the control signal, and a second input is connected to a capacitive component. The circuit arrangement further comprises a conversion device, which is connected to the output of the monostable flipflop, and an evaluation unit, which is connected to the conversion device in order to evaluate the signal voltage and from this to generate at least one detection value, which indicates the capacitance and/or a change in the capacitance of the capacitive component. | 08-06-2015 |
Patent application number | Description | Published |
20090175724 | Bearing unit for a long rotor blade of a wind power installation, wind power installation comprising one such rotor blade bearing arrangement, and method for operating one such wind power installation - The invention relates to a bearing unit for a long rotor blade, especially a wind power installation, said bearing unit comprising two annular elements that can be rotated in relation to each other and are directly or indirectly connected to the rotor blade hub and to the rotor blade, and at least two running tracks that can be axially staggered in relation to each other and comprise peripheral rolling bodies with an approximately cylindrical shape, i.e. each comprising a lateral surface that is rotationally symmetrical to a rotational axis in a very precise manner. The aim of the invention is to be able to fully absorb the tipping moment caused by the wind pressure on the rotor blade and on the bearing unit, and optionally to absorb other forces and other moments. To this end, two running tracks are arranged between the two connection elements, are axially staggered in relation to each other, and comprise rolling bodies with an approximately cylindrical shape, said rolling bodies being oriented in such a way that the rotational axes thereof intersect the longitudinal axis of the rotor blade in question at an angle of between 30° and 90°. The invention also rates to a wind power installation provided with one such rotor blade bearing arrangement, and to a method for operating one such wind power installation. The at least one rotor blade in question is continuously rotted about the longitudinal axis thereof during the option of the wind power installation. | 07-09-2009 |
20090324153 | Element for sealing two parts that can be rotated in relation to one another - The invention relates to an element ( | 12-31-2009 |
20110058911 | MACHINE TOOL FOR INCORPORATING GEAR TEETH INTO THE INNER SIDE OF AN ANNULAR WORKPIECE - The invention is directed to a machine tool for incorporating gear teeth into the inner side of an annular workpiece by metal cutting, with | 03-10-2011 |
20130039611 | SEALING ASSEMBLY FOR A ROLLING BEARING - The invention relates to a sealing assembly for a rolling bearing having two mutually concentric rings spaced apart from each other by a fully circumferential gap in which one or more rows of revolving rolling elements are disposed, such that the two rings are rotatable relative to each other about their common axis, wherein the gap is sealed in the region of at least one of its two mouths, and wherein provided in the region of a gap seal are at least two seal rings, each having at least one sealing lip and an anchoring region on a surface region of the particular seal ring that faces away from the sealing lip, the seal rings being fixed to the same rolling bearing ring, whereas their respective sealing lips bear against the other rolling bearing ring, specifically against surface regions having identical or similar cross section. | 02-14-2013 |
20140125064 | ROTOR BEARING FOR AN ELECTRICAL MACHINE - A disk armature generator for generating electrical energy from rotational energy of a wind power installation and comprising at least two stator components mutually offset axially along a generally horizontal rotation axis of the disk armature, and comprising, mounted therebetween so as to rotate about the rotation axis, at least one ring- or disk-shaped rotor component of the disk armature, and comprising an input-side connection for a gearbox wherein the sun gear thereof, which extends coaxially with the rotation axis of the disk armature, is coupled to at least one ring- or disk-shaped rotor component of the disk armature, wherein a rolling bearing associated with a ring- or disk-shaped rotor component of the disk armature is configured as a selected one of an angular contact ball bearing and angular contact ball bearings, having a contact angle of between 40° and 50° relative to the rotation axis, comprising a double-row angular contact ball bearing in an O arrangement. | 05-08-2014 |
20150316639 | TRACKING DEVICE COMPRISING A RECEIVING STRUCTURE WHICH CAN BE ADJUSTED ABOUT AT LEAST ONE AXIS, FOR MOUNTING AT LEAST ONE ELEMENT THAT IS SENSITIVE TO ELECTROMAGNETIC WAVES AND HAS A PREFERENTIAL RADIATION DIRECTION - The invention relates to a tracking device comprising a receiving structure that can be adjusted about at least one axis, for mounting at least one element that is sensitive to electromagnetic waves and has a preferential radiation direction, and comprising at least one rotational drive per axis for the purpose of actively rotationally adjusting said receiving structure in order for the element(s) mounted thereupon to track a celestial body on one or multiple axes with the aid of a control system and according to a predetermined algorithm, (each of) the rotational drive(s) comprising two annular connection elements that are concentric with one another, are mounted one upon the other, and are or can be coupled to at least one motor for mutual relative adjustment, a first connection element comprising at least one planar connection surface for fixing in place to a foundation, base, column or a connection clement of another pivoting unit, and a second connection element comprising at least one planar connection surface for the purpose of coupling to said receiving structure or to a connection element of another pivoting unit in a rotationally-fixed manner. In addition, at least one row of roller elements is provided between the concentric annular connection elements of a pivoting unit, said roller elements rolling along raceways on the first and second connection elements, a toothing being provided that extends at least partially around one connection element and is formed, together with the raceway(s) that are in place, by machining or shaping a shared annular main part, and bore holes distributed in a circle and passing through the planar contact surface being provided on the other connection element for the purpose of fixing to a contact part, and being formed together with the raceway(s) that are in place by machining or shaping a shared annular main part. | 11-05-2015 |
20160025068 | ARRANGEMENT FOR MOUNTING COUNTER-ROTATABLE PARTS OF AN ENERGY SYSTEM - The invention relates to a rolling bearing arrangement ( | 01-28-2016 |
Patent application number | Description | Published |
20120119149 | PROCESS AND APPARATUS FOR PREPARING ACETYLENE AND SYNTHESIS GAS - The present invention provides a process for preparing acetylene and synthesis gas by partial oxidation of hydrocarbons with oxygen, by first separately preheating the starting gases comprising a hydrocarbon-containing stream and an oxygen-containing stream and then mixing them in a mixing zone and, after they have flowed through the burner block, reacting them in the firing space and then cooling the products rapidly, wherein the surface on the firing space side of the burner block is covered with a purge gas stream and this purge gas stream is introduced through the burner block by means of several bores, where the averaged ratio of effective surface area of the burner block to number of these bores in the burner block for the purge gas stream is within a range from 5 to 100 cm | 05-17-2012 |
20120119150 | PROCESS AND APPARATUS FOR PREPARING ACETYLENE AND SYNTHESIS GAS - A process for preparing acetylene and synthesis gas by partial oxidation of hydrocarbons with oxygen, by first separately preheating the hydrocarbon gas and oxygen gas, and then reacting the gases and cooling the products rapidly. The reactor wall is blanketed with a purge gas stream, introduced through a plurality of feed lines. These feed lines deliver purge gas in a vector direction within a 10° angle of the main flow direction of the reactive gas stream. The purge gas is delivered at multiple stages relative to the main flow direction of the reactive gas stream, and the free cross section of the firing space available to the reactive gas stream, at the height of the feed lines of the purge gas stream, is approximately constant. | 05-17-2012 |
20130334464 | PROCESS FOR PREPARING ACETYLENE AND SYNTHESIS GAS - A process for preparing acetylene and synthesis gas by partial oxidation of hydrocarbons with oxygen, is disclosed. The process consists of separately preheating and then mixing a first input stream containing a hydrocarbon and a second input stream containing oxygen, supplying the first input stream and the second input stream via a burner block to a firing space, quenching a cracking gas obtained to produce a process water stream and a product gas stream, cooling the product gas stream in a cooling column by direct heat exchange with cooling water, depleting soot in an electrostatic filter, combining all process water streams and passing through soot channels, subjecting the combined process water stream to a cleaning operation by partial vaporization in a one-stage flash vessel to obtain a cleaned process water stream, and recycling the cleaned process water stream into the process. | 12-19-2013 |
20150217999 | METHOD FOR PRODUCING ACETYLENE AND SYNTHESIS GAS - The invention proposes a method for producing acetylene and synthesis gas by partial oxidation of hydrocarbons with oxygen, wherein a first feedstock ( | 08-06-2015 |
20150336858 | METHOD FOR PRODUCING ACETYLENES AND SYNGAS - The invention relates to a continuous method for producing acetylenes and syngas by partially oxidizing hydrocarbons with oxygen. A first feed stream ( | 11-26-2015 |