Patent application number | Description | Published |
20090325361 | METHOD FOR PRODUCING A SEMICONDUCTOR INCLUDING A MATERIAL LAYER - A method for producing a semiconductor including a material layer. In one embodiment a trench is produced having two opposite sidewalls and a bottom, in a semiconductor body. A foreign material layer is produced on a first one of the two sidewalls of the trench. The trench is filled by epitaxially depositing a semiconductor material onto the second one of the two sidewalls and the bottom of the trench. | 12-31-2009 |
20110073990 | Capacitor and Method for Making Same - One or more embodiments relate to a method for making a capacitor such as a trench capacitor. The method includes: providing a substrate; forming an opening within the substrate; forming a sidewall spacer over a sidewall surface of the opening; forming a first conductive layer within the opening after forming the sidewall spacer; removing the sidewall spacer; forming a dielectric layer over the first conductive layer within the opening; and forming a second conductive layer over the dielectric layer within the opening. | 03-31-2011 |
20110133272 | SEMICONDUCTOR DEVICE WITH IMPROVED ON-RESISTANCE - A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device includes a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone. | 06-09-2011 |
20120068240 | Semiconductor Device and Method using a Sacrificial Layer - A method of manufacturing a semiconductor device is disclosed. The method includes forming a first conductive layer over a substrate. The first conductive layer has a top surface and sidewalls, wherein the first conductive layer comprises an overhang of a non-conductive material along the sidewalls. The method further includes forming an insulating layer on the first conductive layer, and forming a sacrificial layer over the insulating layer and the overhang of the first conductive layer. The sacrificial layer is partially removed wherein a residue of the sacrificial layer remains beneath the overhang, and a second conductive layer is formed on the insulating layer. | 03-22-2012 |
20120080690 | Method for Manufacturing a Composite Wafer Having a Graphite Core, and Composite Wafer Having a Graphite Core - According to an embodiment, a composite wafer includes a carrier substrate having a graphite core and a monocrystalline semiconductor layer attached to the carrier substrate. | 04-05-2012 |
20120083098 | Method for Manufacturing a Composite Wafer Having a Graphite Core, and Composite Wafer Having a Graphite Core - According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate. | 04-05-2012 |
20120217580 | SEMICONDUCTOR DEVICE WITH IMPROVED ON-RESISTANCE - A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device includes a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone. | 08-30-2012 |
20120286355 | Power Semiconductor Device and a Method for Forming a Semiconductor Device - A power semiconductor device has a semiconductor body which includes an active area and a peripheral area which both define a horizontal main surface of the semiconductor body. The semiconductor body further includes an n-type semiconductor layer, a pn junction and at least one trench. The n-type semiconductor layer is embedded in the semiconductor body and extends to the main surface in the peripheral area. The pn junction is arranged between the n-type semiconductor layer and the main surface in the active area. The at least one trench extends in the peripheral area from the main surface into the n-type semiconductor layer and includes a dielectric layer with fixed negative charges. In the vertical direction, the dielectric layer is arranged both below and above the pn junction. The dielectric layer with fixed negative charges typically has a negative net charge. Further, a method for forming a semiconductor device is provided. | 11-15-2012 |
20120289023 | Method for Producing a Semiconductor Device - A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench. | 11-15-2012 |
20130221483 | Trench Capacitors and Methods of Forming the Same - A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer. | 08-29-2013 |
20130323897 | SEMICONDUCTOR DEVICE WITH IMPROVED ON-RESISTANCE - A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device includes a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone. | 12-05-2013 |
20140070232 | Method for Manufacturing a Composite Wafer Having a Graphite Core, and Composite Wafer Having a Graphite Core - A composite wafer including a carrier substrate having a graphite core and a monocrystalline semiconductor substrate or layer attached to the carrier substrate and a corresponding method for manufacturing such a composite wafer is provided. | 03-13-2014 |
20140235058 | Method for Forming a Power Semiconductor Device - A method for forming a semiconductor device includes providing a semiconductor body which has a main surface and a first n-type semiconductor region, forming a trench which extends from the main surface into the first n-type semiconductor region, and forming a dielectric layer having fixed negative charges on a surface of the trench, by performing at least one atomic layer deposition using an organometallic precursor. | 08-21-2014 |
20140306184 | TWO-DIMENSIONAL MATERIAL CONTAINING ELECTRONIC COMPONENTS - In various embodiments, an electronic component is provided. The electronic component may include a dielectric structure; and a two-dimensional material containing structure over the dielectric structure. The dielectric structure is doped with dopants to change the electric characteristic of the two-dimensional material containing structure. | 10-16-2014 |
20140335676 | METHOD FOR MANUFACTURING A COMPOSITE WAFER HAVING A GRAPHITE CORE, AND COMPOSITE WAFER HAVING A GRAPHITE CORE - According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate. | 11-13-2014 |