Rolandi
Marco Rolandi, Seattle, WA US
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20140162436 | INORGANIC NANOSTRUCTURE REACTIVE DIRECT-WRITE AND GROWTH - Methods for forming inorganic nanostructures are provided. The methods create the inorganic nanostructures by positioning a writing electrode (e.g., a conductive “stamp”) spaced nanometers above a substrate such that a precursor is intermediate the two. Applying an electric field, a voltage bias, an ionic current, or an electronic current between the writing electrode and the substrate converts the precursor into an inorganic solid material (e.g., a semiconductor such as silicon or germanium) in the area of the writing electrode. | 06-12-2014 |
20140194379 | METHODS FOR THE PRODUCTION OF CHITIN NANOFIBERS AND USES THEREOF - Methods for the production chitin nanofibers and uses thereof. Furthermore, methods for the production of chitin nanofibers and the fabrication of chitin nanofiber structures and devices. | 07-10-2014 |
Paolo Rolandi, Voghera (pv) IT
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20110286269 | Non-Volatile Electronic Memory Device With NAND Structure Being Monolithically Integrated On Semiconductor - A non-volatile electronic memory device is integrated on a semiconductor and is of the Flash EEPROM type with a NAND architecture including at least one memory matrix divided into physical sectors, intended as smallest erasable units, and organized in rows or word lines and columns or bit lines of memory cells. At least one row or word line of a given physical sector is electrically connected to at least one row or word line of an adjacent physical sector to form a single logic sector being erasable, with the source terminals of the corresponding cells of the pair of connected rows referring to a same selection line of a source line. | 11-24-2011 |
20120110246 | EXECUTE-IN-PLACE MODE CONFIGURATION FOR SERIAL NON-VOLATILE MEMORY - Example embodiments for configuring a serial non-volatile memory device for an execute-in-place mode may comprise a non-volatile configuration register to store an execute-in-place mode value that may be read at least in part in response to power being applied to the memory device. | 05-03-2012 |
Paolo Rolandi, Voghera IT
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20090027965 | ROW SELECTOR CIRCUIT FOR ELECTRICALLY PROGRAMMABLE AND ERASABLE NON VOLATILE MEMORIES - The invention relates to a row decoder circuit for non volatile memory devices of the electrically programmable and erasable type, for example of the Flash EEPROM type having a NOR architecture. The proposed row decoder circuit allows to carry out the erasing step very quickly, for example with a granularity emulating at least 16 kB and even overcoming by at least 2 kB Flash memories of the NAND type. The memory can thus maintain high performances in terms of random access speed but shows a high erasing speed typical of memory architectures of the NAND type. | 01-29-2009 |
20090180328 | Method for Accessing in Reading, Writing and Programming to a NAND Non-Volatile Memory Electronic Device Monolithically Integrated on Semiconductor - A method for accessing, in reading, programming, and erasing a semiconductor-integrated non-volatile memory device of the Flash EEPROM type with a NAND architecture having at least one memory matrix organized in rows or word lines and columns or bit lines, and wherein, for the memory, a plurality of additional address pins are provided. The method provides both an access protocol of the asynchronous type and a protocol of the extended type allowing to address, directly and in parallel, a memory extended portion by loading an address register associated with the additional pins in two successive clock pulses. A third multi-sequential access mode and a parallel additional bus referring to the additional address pins are also provided to allow a double addressing mode, sequential and in parallel. | 07-16-2009 |
20100213529 | SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, MEMORY CELL AND MEMORY DEVICE - Semiconductor device formed by a first conductive strip of semiconductor material; a control gate region of semiconductor material, facing a channel portion of the first conductive strip, and an insulation region arranged between the first conductive strip and the control gate region. The first conductive strip includes a conduction line having a first conductivity type and a control line having a second conductivity type, arranged adjacent and in electrical contact with each other, and the conduction line forms the channel portion, a first conduction portion and a second conduction portion arranged on opposite sides of the channel portion. | 08-26-2010 |
20140189220 | EXECUTE-IN-PLACE MODE CONFIGURATION FOR SERIAL NON-VOLATILE MEMORY - Example embodiments for configuring a serial non-volatile memory device for an execute-in-place mode may comprise a non-volatile configuration register to store an execute-in-place mode value that may be read at least in part in response to power being applied to the memory device. | 07-03-2014 |
20140302649 | Semiconductor Field-Effect Transistor, Memory Cell and Memory Device - Semiconductor device formed by a first conductive strip of semiconductor material; a control gate region of semiconductor material, facing a channel portion of the first conductive strip, and an insulation region arranged between the first conductive strip and the control gate region. The first conductive strip includes a conduction line having a first conductivity type and a control line having a second conductivity type, arranged adjacent and in electrical contact with each other, and the conduction line forms the channel portion, a first conduction portion and a second conduction portion arranged on opposite sides of the channel portion. | 10-09-2014 |
20140347930 | NON-VOLATIVE ELECTRONIC MEMORY DEVICE WITH NAND STRUCTURE BEING MONOLITHICALLY INTEGRATED ON SEMICONDUCTOR - A non-volatile electronic memory device is integrated on a semiconductor and is of the Flash EEPROM type with a NAND architecture including at least one memory matrix divided into physical sectors, intended as smallest erasable units, and organized in rows or word lines and columns or bit lines of memory cells. At least one row or word line of a given physical sector is electrically connected to at least one row or word line of an adjacent physical sector to form a single logic sector being erasable, with the source terminals of the corresponding cells of the pair of connected rows referring to a same selection line of a source line. | 11-27-2014 |
Paolo Rolandi, Voghera(pv) IT
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20120005411 | NON-VOLATILE CONFIGURATION FOR SERIAL NON-VOLATILE MEMORY - Example embodiments for configuring a serial non-volatile memory device may comprise a non-volatile configuration register to store a configuration value received from the processor, the configuration value to specify one or more attributes of a memory access operation. The configuration value may be read at least in part in response to power being applied to the memory device. | 01-05-2012 |
Paolo Rolandi, Agrate Brianza (mi) IT
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20140195723 | NON-VOLATILE CONFIGURATION FOR SERIAL NON-VOLATILE MEMORY - Example embodiments for configuring a serial non-volatile memory device may comprise a non-volatile configuration register to store a configuration value received from the processor, the configuration value to specify one or more attributes of a memory access operation. The configuration value may be read at least in part in response to power being applied to the memory device. | 07-10-2014 |
Pier Luigi Rolandi, Monleale IT
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20130194021 | CAPACITIVE COUPLING, ASYNCHRONOUS ELECTRONIC LEVEL SHIFTER CIRCUIT - An asynchronous level shifter electronic circuit including: a transmitter, which can be coupled to a first voltage and generates a communication signal; a receiver, which can be coupled to a second voltage; and a capacitive coupling stage, which receives the communication signal and supplies a corresponding filtered signal to the receiver. The receiver includes: a threshold device, which has an input terminal and an output terminal and switches an electrical quantity on the output terminal between a first value and a second value, as a function of corresponding transitions through a threshold of a first intermediate signal present on the input terminal, to generate a second intermediate signal; and a biasing circuit, which generates the first intermediate signal to have a d.c. component, which is a function of the second intermediate signal, and superposed on which is a variable component, which is a function of the filtered signal. | 08-01-2013 |
Walter Rolandi, Columbia, SC US
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20080201306 | PERSONAL VIRTUAL ASSISTANT - A computer-based virtual assistant includes a virtual assistant application running on a computer capable of receiving human voice communications from a user of a remote user interface and transmitting a vocalization to the remote user interface, the virtual assistant application enabling the user to access email and voicemail messages of the user, the virtual assistant application selecting a responsive action to a verbal query or instruction received from the remote user interface and transmitting a vocalization characterizing the selected responsive action to the remote user interface, and the virtual assistant waiting a predetermined period of time, and if no canceling indication is received from the remote user interface, proceeding to perform the selected responsive action, and if a canceling indication is received from the remote user interface halting the selected responsive action and transmitting a new vocalization to the remote user interface. Also a method of using the virtual assistant. | 08-21-2008 |
20140108019 | Smart Home Automation Systems and Methods - A smart home interaction system is presented. It is built on a multi-modal, multithreaded conversational dialog engine. The system provides a natural language user interface for the control of household devices, appliances or household functionality. The smart home automation agent can receive input from users through sensing devices such as a smart phone, a tablet computer or a laptop computer. Users interact with the system from within the household or from remote locations. The smart home system can receive input from sensors or any other machines with which it is interfaced. The system employs interaction guide rules for processing reaction to both user and sensor input and driving the conversational interactions that result from such input. The system adaptively learns based on both user and sensor input and can learn the preferences and practices of its users. | 04-17-2014 |