|Patent application number
|FINFET DEVICES INCLUDING HIGH MOBILITY CHANNEL MATERIALS WITH MATERIALS OF GRADED COMPOSITION IN RECESSED SOURCE/DRAIN REGIONS AND METHODS OF FORMING THE SAME - A finFET device can include a high mobility semiconductor material in a fin structure that can provide a channel region for the finFET device. A source/drain recess can be adjacent to the fin structure and a graded composition epi-grown semiconductor alloy material, that includes a component of the high mobility semiconductor material, can be located in the source/drain recess.
|FINFET DEVICES INCLUDING RECESSED SOURCE/DRAIN REGIONS HAVING OPTIMIZED DEPTHS AND METHODS OF FORMING THE SAME - A finFET device can include a source/drain contact recess having an optimal depth beyond which an incremental decrease in a spreading resistance value for a horizontal portion of a source/drain contact in the recess provided by increased depth may be less than an incremental increase in total resistance due to the increase in the vertical portion of the source/drain contact at the increased depth.
|INTEGRATED CIRCUIT DEVICES INCLUDING FINFETS AND METHODS OF FORMING THE SAME - Integrated circuit devices including fin field-effect transistors (finFETs) and methods of forming the same are provided. The methods may include forming a fin-shaped channel region including germanium on a substrate and forming a source/drain region adjacent the channel region on the substrate. The methods may further include forming a barrier layer contacting sidewalls of the channel region and the source/drain region, and the barrier layer may include Si
|METHODS OF FORMING SEMICONDUCTOR PATTERNS INCLUDING REDUCED DISLOCATION DEFECTS AND DEVICES FORMED USING SUCH METHODS - Methods of forming semiconductor patterns including reduced dislocation defects and devices formed using such methods are provided. The methods may include forming an oxide layer on a substrate and forming a recess in the oxide layer and the substrate. The methods may further include forming an epitaxially grown semiconductor pattern in the recess that contacts a sidewall of the substrate at an interface between the oxide layer and the substrate and defines an upper surface of a void in the recess in the substrate.
|METHODS OF FORMING A SEMICONDUCTOR LAYER INCLUDING GERMANIUM WITH LOW DEFECTIVITY - Methods of forming a semiconductor layer including germanium with low defectivity are provided. The methods may include sequentially forming a silicate glass layer, a diffusion barrier layer including nitride and an interfacial layer including oxide on a substrate. The methods may also include forming a first semiconductor layer on the interfacial layer and converting a portion of the first semiconductor layer into a second semiconductor layer having a germanium concentration therein that is higher than a germanium concentration of the first semiconductor layer.
|INTEGRATED CIRCUIT DEVICES INCLUDING STRAINED CHANNEL REGIONS AND METHODS OF FORMING THE SAME - Integrated circuit devices including strained channel regions and methods of forming the same are provided. The integrated circuit devices may include enhancement-mode field effect transistors. The enhancement-mode field effect transistors may include a quantum well channel region having a well thickness T
|CRYSTALLINE MULTIPLE-NANOSHEET III-V CHANNEL FETS - A field effect transistor includes a body layer comprising a crystalline semiconductor channel region therein, and a gate stack on the channel region. The gate stack includes a crystalline semiconductor gate layer, and a crystalline semiconductor gate dielectric layer between the gate layer and the channel region. Related devices and fabrication methods are also discussed.
|FINFET SEMICONDUCTOR DEVICES INCLUDING RECESSED SOURCE-DRAIN REGIONS ON A BOTTOM SEMICONDUCTOR LAYER AND METHODS OF FABRICATING THE SAME - FinFET semiconductor devices and methods of forming the same are provided. The finFET semiconductor devices may include an insulator layer, a bottom semiconductor layer on the insulator layer, a channel fin on the bottom semiconductor layer, a source region on the bottom semiconductor layer and adjacent a first side of the channel fin, and a drain region on the bottom semiconductor layer and adjacent a second side of the channel fin opposite the first side.
|INTEGRATED CIRCUIT DEVICES INCLUDING CONTACTS AND METHODS OF FORMING THE SAME - Integrated circuit devices including contacts and methods of forming the same are provided. The devices may include a fin on a substrate, a gate structure on the fin and a source/drain region in the fin at a side of the gate structure. The devices may further include a contact plug covering an uppermost surface of the source/drain region and a sidewall of the gate structure. The contact plug may include an inner portion including a first material and an outer portion including a second material different from the first material. The outer portion may at least partially cover a sidewall of the inner portion, and a portion of the outer portion may be disposed between the sidewall of the gate structure and the sidewall of the inner portion.
|INTEGRATED CIRCUIT DEVICES INCLUDING FINFETS AND METHODS OF FORMING THE SAME - Methods of forming a finFET are provided. The methods may include forming a fin-shaped channel region including indium (In) on a substrate, forming a deep source/drain region adjacent to the channel region on the substrate and forming a source/drain extension region between the channel region and the deep source/drain region. Opposing sidewalls of the source/drain extension region may contact the channel region and the deep source/drain region, respectively, and the source/drain extension region may include In
|CRYSTALLINE MULTIPLE-NANOSHEET STRAINED CHANNEL FETS AND METHODS OF FABRICATING THE SAME - A field effect transistor includes a body layer having a strained crystalline semiconductor channel region, and a gate stack on the channel region. The gate stack includes a crystalline semiconductor gate layer that is lattice mismatched with the channel region, and a crystalline gate dielectric layer between the gate layer and the channel region. Related devices and fabrication methods are also discussed.
|Multiple Channel Length Finfets with Same Physical Gate Length - A semiconductor structure includes a first finFET device including a first fin, a first gate electrode structure on sidewalls and an upper surface of the first fin, a first channel region beneath the first gate electrode structure, and first source and drain regions in the first fin on opposite sides of the first channel region, and a second finFET device including a second fin, a second gate electrode structure on sidewalls and an upper surface of the second fin, a second channel region beneath the second gate electrode structure, and second source and drain regions in the second fin on opposite sides of the second channel region. The second gate electrode structure has a second physical gate length that is substantially the same as a first physical gate length of the first gate electrode structure, and the second finFET device has a second effective channel length that is different from a first effective channel length of the first gate electrode structure.
|METHODS OF FORMING DEFECT-FREE SRB ONTO LATTICE-MISMATCHED SUBSTRATES AND DEFECT-FREE FINS ON INSULATORS - A strain-relieved buffer is formed by forming a first silicon-germanium (SiGe) layer directly on a surface of a bulk silicon (Si) substrate. The first SiGe layer is patterned to form at least two SiGe structures so there is a space between the SiGe structures. An oxide is formed on the SiGe structures, and the SiGe structures are mesa annealed. The oxide is removed to expose a top portion of the SiGe structures. A second SiGe layer is formed on the exposed portion of the SiGe structures so that the second SiGe layer covers the space between the SiGe structures, and so that a percentage Ge content of the first and second SiGe layers are substantially equal. The space between the SiGe structures is related to the sizes of the structures adjacent to the space and an amount of stress relief that is associated with the structures.
|Integrated Circuits with Si and Non-Si Nanosheet FET Co-Integration with Low Band-to-Band Tunneling and Methods of Fabricating the Same - An integrated circuit may include multiple first, non-Si, nanosheet field-effect transistors (FETs) and multiple second, Si, nanosheet FETs. Nanosheets of ones of the first, non-Si, nanosheet FETs may include less than about 30% Si. The first, non-Si, nanosheet FETs may define a critical speed path of the circuit of the integrated circuit. Nanosheets of ones of the second, Si, nanosheet FETs may include more than about 30% Si. The second, Si, nanosheet FETs may define a non-critical speed path of the integrated circuit. Ones of the first, non-Si, nanosheet FETs may be configured to have a higher speed than a speed of ones of the second, Si, nanosheet FETs.
|NANOSHEET FETS WITH STACKED NANOSHEETS HAVING SMALLER HORIZONTAL SPACING THAN VERTICAL SPACING FOR LARGE EFFECTIVE WIDTH - A device including a stacked nanosheet field effect transistor (FET) may include a substrate, a first channel pattern on the substrate, a second channel pattern on the first channel pattern, a gate that is configured to surround portions of the first channel pattern and portions of the second channel pattern, and source/drain regions on opposing ends of the first channel pattern and second channel pattern. The first and second channel patterns may each include a respective plurality of nanosheets arranged in a respective horizontal plane that is parallel to a surface of the substrate. The nanosheets may be spaced apart from each other at a horizontal spacing distance between adjacent ones of the nanosheets. The second channel pattern may be spaced apart from the first channel pattern at a vertical spacing distance from the first channel pattern to the second channel pattern that is greater than the horizontal spacing distance.
|INTEGRATED CIRCUIT CHIPS HAVING FIELD EFFECT TRANSISTORS WITH DIFFERENT GATE DESIGNS - An integrated circuit chip includes a semiconductor substrate, a first back-end-of-line unit circuit that includes a first group of field effect transistors, a second gate-loaded unit circuit that includes a second group of field effect transistors. The first group of field effect transistors includes a first transistor and the second group of field effect transistors includes a second transistor. A bottom surface of a gate electrode of the first transistor extends closer to a bottom surface of the semiconductor substrate than does a bottom surface of a gate electrode of the second transistor.
|LOW RESISTIVITY DAMASCENE INTERCONNECT - A damascene interconnect structure may be formed by forming a trench in an ILD. A diffusion barrier may be deposited on trench surfaces, followed by a first liner material. The first liner material may be removed from a bottom surface of the trench. A second liner material may be directionally deposited on the bottom. A conductive seed layer may be deposited on the first and second liner materials, and a conductive material may fill in the trench. A CMP process can remove excess material from the top of the structure. A damascene interconnect may include a dielectric having a trench, a first liner layer arranged on trench sidewalls, and a second liner layer arranged on a trench bottom. A conductive material may fill the trench. The first liner material may have low wettability and the second liner material may have high wettability with respect to the conductive material.
|INTERFACE LAYER FOR GATE STACK USING 03 POST TREATMENT - Exemplary embodiments provide for fabricating a field effect transistor (FET) with an interface layer for a gate stack using an O3 post treatment. Aspects of the exemplary embodiments include: forming a semiconductor body upon a substrate; cleaning the surface of the semiconductor body; depositing a first dielectric layer on the semiconductor body; performing an O3 treatment that mixes with and penetrates the first dielectric layer and reacts with the semiconductor body to form a new interface layer; and performing gate stack processing, including deposition of a gate electrode.
|RECTANGULAR NANOSHEET FABRICATION - Exemplary embodiments provide methods for fabricating a nanosheet structure suitable for field-effect transistor (FET) fabrication. Aspects of exemplary embodiment include selecting an active material that will serve as a channel material in the nanosheet structure, a substrate suitable for epitaxial growth of the active material, and a sacrificial material to be used during fabrication of the nanosheet structure; growing a stack of alternating layers of active and sacrificial materials over the substrate; and selectively etching the sacrificial material, wherein due to the properties of the sacrificial material, the selective etch results in remaining layers of active material having an aspect ratio greater than 1 and substantially a same thickness and atomic smoothness along the entire cross-sectional width of each active material layer perpendicular to current flow.
|SEMICONDUCTOR DEVICE WITH AN ISOLATION GATE AND METHOD OF FORMING - An embodiment includes a semiconductor device, comprising: a substrate; a continuous diffusion region disposed on the substrate; a first gate structure disposed on the continuous diffusion region; a second gate structure disposed on the continuous diffusion region; an isolation gate structure disposed between the first gate structure and the second gate structure and disposed adjacent to the both the first gate structure and the second gate structure; a first diffusion region of the continuous diffusion region disposed between the first gate structure and the isolation gate structure; a second diffusion region of the continuous diffusion region disposed between the second gate structure and the isolation gate structure; a conductive layer disposed on the first and second diffusion regions; and an isolation gate contact disposed over the isolation gate structure and electrically insulated from the first diffusion region.
|DEVICE CONTACT STRUCTURES INCLUDING HETEROJUNCTIONS FOR LOW CONTACT RESISTANCE - A semiconductor device can include a channel region with a first semiconductor material for a majority carrier in the channel region during operation (on state) of the device and a metal contact. A source/drain region can include a semiconductor material alloy including a second semiconductor material and at least one heterojunction located between the metal contact and the channel region, wherein the heterojunction forms a band-edge offset for the majority carrier that is less than or equal to about 0.2 eV.
|STRAINED STACKED NANOSHEET FETS AND/OR QUANTUM WELL STACKED NANOSHEET - Exemplary embodiments provide for fabricating a nanosheet stack structure having one or more sub-stacks. Aspects of the exemplary embodiments include: growing an epitaxial crystalline initial stack of one or more sub-stacks, each of the sub-stacks having at least three layers, a sacrificial layer A, and at least two different non-sacrificial layers B and C having different material properties, wherein the non-sacrificial layers B and C layers are kept below a thermodynamic or kinetic critical thickness corresponding to metastability during all processing, and wherein the sacrificial layer An is placed only at a top or a bottom of each of the sub-stacks, and each of the sub-stacks is connected to an adjacent sub-stack at the top or the bottom using one of the sacrificial layers A; proceeding with fabrication flow of nanosheet devices, such that pillar structures are formed at each end of the epitaxial crystalline stack that to hold the nanosheets in place after selective etch of the sacrificial layers; and selectively removing sacrificial layers A to all non-sacrificial layers B and C, while the remaining layers in the stack are held in place by the pillar structures so that after removal of the sacrificial layers An, each of the sub-stacks contains the non-sacrificial layers B and C.
|STRAINED STACKED NANOSHEET FETS AND/OR QUANTUM WELL STACKED NANOSHEET - Exemplary embodiments provide for fabricating a biaxially strained nanosheet. Aspects of the exemplary embodiments include: growing an epitaxial crystalline initial superlattice having one or more periods, each of the periods comprising at least three layers, an active material layer, a first sacrificial material layer and a second sacrificial material layer, the first and second sacrificial material layers having different material properties; in each of the one or more periods, placing each of the active material layers between the first and second sacrificial material layers, wherein lattice constants of the first and second sacrificial material layers are different than the active material layer and impose biaxial stress in the active material layer; selectively etching away all of the first sacrificial material layers thereby exposing one surface of the active material for additional processing, while the biaxial strain in the active material layers is maintained by the second sacrificial material layers; and selectively etching away all of the second sacrificial material layers thereby exposing a second surface of the active material layers for additional processing.
|MULTIPLE CPP FOR INCREASED SOURCE/DRAIN AREA FOR FETS INCLUDING IN A CRITICAL SPEED PATH - An integrated circuit comprises at least one block comprising a first cell and a second cell. The first cell comprises a first FET formed with a first contacted poly pitch (CPP), and the second cell comprises a second FET formed with a second CPP. The first CPP is greater than the second CPP. The first FET is part of a critical-speed path, and the second FET is part of a noncritical-speed path, in which the critical-speed path operates at a faster speed than the noncritical-speed path. The first FET and the second FET each comprise a planar FET, a finFET, a gate-all-around FET or a nanosheet FET. A method for forming the integrated circuit is also disclosed.
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|METHODS OF FABRICATING INTEGRATED CIRCUIT DEVICE WITH FIN TRANSISTORS HAVING DIFFERENT THRESHOLD VOLTAGES - Methods of fabricating integrated circuit device with fin transistors having different threshold voltages are provided. The methods may include forming first and second semiconductor fins including first and second semiconductor materials, respectively, and covering at least one among the first and second semiconductor fins with a mask. The methods may further include depositing a compound semiconductor layer including the first and second semiconductor materials directly onto sidewalls of the first and second semiconductor fins not covered by the mask and oxidizing the compound semiconductor layer. The oxidization process oxidizes the first semiconductor material within the compound semiconductor layer while driving the second semiconductor material within the compound semiconductor layer into the sidewalls of the first and second semiconductor fins not covered by the mask.
|METHODS OF FABRICATING NON-PLANAR TRANSISTORS INCLUDING CURRENT ENHANCING STRUCTURES - Methods of fabricating non-planar transistors including current enhancing structures are provided. The methods may include forming first and second fin structures directly adjacent each other overlying a substrate including an isolation layer. The methods may further include forming a spacer on the isolation layer including first and second recesses exposing upper surfaces of the first and second fin structures respectively. The spacer may cover an upper surface of the isolation layer between the first and second recesses. The methods may also include forming first and second current enhancing structures contacting the first and second fin structures, respectively, in the first and second recesses.
|METHODS OF FORMING A FIELD EFFECT TRANSISTOR, INCLUDING FORMING A REGION PROVIDING ENHANCED OXIDATION - Methods of forming a Field Effect Transistor (FET) are provided. The methods may include forming a region that provides enhanced oxidation under a fin-shaped FET (FinFET) body.
|FIN-FET TRANSISTOR WITH PUNCHTHROUGH BARRIER AND LEAKAGE PROTECTION REGIONS - A method of forming a field effect transistor includes forming a punchthrough region having a first conductivity type in a substrate, forming an epitaxial layer having the first conductivity type on the substrate, patterning the epitaxial layer to form a fin that protrudes from the substrate, forming a dummy gate and gate sidewall spacers on the fin defining preliminary source and drain regions of the fin on opposite sides of the dummy gate, removing the preliminary source and drain regions of the fin, implanting second conductivity type dopant atoms into exposed portions of the substrate and the punchthrough region, and forming source and drain regions having the second conductivity type on opposite sides of the dummy gate and the gate sidewall spacers.
|METHODS OF FORMING FIELD EFFECT TRANSISTORS, INCLUDING FORMING SOURCE AND DRAIN REGIONS IN RECESSES OF SEMICONDUCTOR FINS - Methods of forming a fin-shaped Field Effect Transistor (FinFET) are provided. The methods may include selectively incorporating source/drain extension-region dopants into source and drain regions of a semiconductor fin, using a mask to block incorporation of the source/drain extension-region dopants into at least portions of the semiconductor fin. The methods may include removing portions of the source and drain regions of the semiconductor fin to define recesses therein. The methods may include epitaxially growing source and drain regions from the recesses in the semiconductor fin.
|METHODS OF FABRICATING QUANTUM WELL FIELD EFFECT TRANSISTORS HAVING MULTIPLE DELTA DOPED LAYERS - Methods of fabricating quantum well field effect transistors are provided. The methods may include forming a first barrier layer including a first delta doped layer on a quantum well layer and forming a second barrier layer including a second delta doped layer selectively on a portion of the first barrier layer in a first region of the substrate. The methods may also include patterning the first and second barrier layers and the quantum well layer to form a first quantum well channel structure in the first region and patterning the first barrier layer and the quantum well layer to form a second quantum well channel structure in a second region. The methods may further include forming a gate insulating layer on the first and second quantum well channel structures of the substrate and forming a gate electrode layer on the gate insulating layer.