Patent application number | Description | Published |
20090025455 | Leak Characterization Apparatuses and Methods for Fluid Storage Containers - According to the invention, an apparatus to characterize leaks in a fluid storage container is disclosed. The apparatus may include a valve coupler, a gas manifold and a processor. The valve coupler may couple the apparatus with a closed valve on the fluid storage container. The gas manifold may be coupled with the valve coupler and may include a first branch connected with a gas monitoring device. The gas monitoring device may scan for a plurality of gases that may be emitted by the closed valve of the fluid storage container. The processor may be operable to receive gas monitoring device data representing masses for one or more of the plurality of gases detected by the monitor. | 01-29-2009 |
20090249953 | PURIFICATION OF FLUORINE CONTAINING GASES AND SYSTEMS AND MATERIALS THEREOF - A method of reducing moisture in a fluorine-containing gas is described. The method may include the steps of providing a purifier material that includes elemental carbon, and flowing the unpurified fluorine-containing gas having an unpurified moisture concentration over or through the carbon-based purifier material. At least a portion of the moisture is captured in the purifier material so that a purified fluorine-containing gas that emerges downstream of the purifier material has a reduced moisture concentration that is about 50% or less of the unpurified moisture concentration. | 10-08-2009 |
20090278455 | METHODS AND MATERIALS FOR THE REDUCTION AND CONTROL OF MOISTURE AND OXYGEN IN OLED DEVICES - Novel uses and methods of use for inorganic and macroreticulate polymer bonding to metals to control moisture and oxygen in OLED, and other like devices, are provided. Materials having color change capacity are also provided for the removal of moisture from an OLED, where the material changes color upon reaching its capacity and thereby signals the user that the OLED is no longer protected from moisture damage. | 11-12-2009 |
20090317317 | Fluid Storage and Purification Method and System - A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. A solvent mixture comprising an ionic liquid and a cosolvent is provided within the vessel. The fluid is contacted with the solvent mixture for take-up of the fluid by the solvent mixture. The fluid is released from the ionic liquid and dispensed from the vessel. | 12-24-2009 |
20090320771 | IONIC LIQUID MEDIUMS FOR HOLDING SOLID PHASE PROCESS GAS PRECURSORS - Ionic fluid mixtures are described that include an ionic liquid and a solid-phase material. The ionic liquid and the solid-phase material are selected to convert the solid-phase material into a gas phase material at a temperature that is lower than a conversion of the ionic liquid into a gas phase ionic material. In addition, methods of supplying a gaseous precursor to an application are described. These methods include providing a mixture of an ionic liquid and a solid-phase starting material, heating the mixture to a temperature that vaporizes at least a portion of the solid-phase starting material into the gaseous precursor, and transporting the gaseous precursor from the mixture to the application that utilizes the gaseous precursor. | 12-31-2009 |
20100223208 | FLUID STORAGE AND PURIFICATION METHOD AND SYSTEM - A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. The vessel contains an ionic liquid therein. The fluid is contacted with the ionic liquid for take-up of the fluid by the ionic liquid. There is substantially no chemical change in the ionic liquid and the fluid. The fluid is released from the ionic liquid and dispensed from the vessel. | 09-02-2010 |
20110056515 | NF3 CHAMBER CLEAN ADDITIVE - Methods of cleaning a processing chamber with nitrogen trifluoride (NF | 03-10-2011 |
20110059617 | HIGH ASPECT RATIO SILICON OXIDE ETCH - Methods of etching high-aspect-ratio features in dielectric materials such as silicon oxide are described. The methods may include a concurrent introduction of a fluorocarbon precursor and an iodo-fluorocarbon precursor into a substrate processing system housing a substrate. The fluorocarbon precursor may have a F:C atomic ratio of about 2:1 or less, and the iodo-fluorocarbon may have a F:C ratio of about 1.75:1 to about 1.5:1. Exemplary precursors may include C | 03-10-2011 |
20110070371 | FLUORINE COMPOUNDS FOR DOPING CONDUCTIVE OXIDE THIN FILMS - Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate. | 03-24-2011 |
20110073136 | REMOVAL OF GALLIUM AND GALLIUM CONTAINING MATERIALS - Methods of removing gallium and gallium-containing materials from surfaces within a substrate processing chamber using a cleaning mixture are described. The cleaning mixture contains an iodine-containing compound and is introduced into the processing chamber. Iodine reacts with gallium resident within the chamber to produce thermally volatile Gal | 03-31-2011 |
20110088718 | CHAMBER CLEANING METHODS USING FLUORINE CONTAINING CLEANING COMPOUNDS - Methods of cleaning a process chamber used to fabricate electronics components are described. The methods may include the step of providing a cleaning gas mixture to the process chamber, where the cleaning gas mixture may include a fluorine-containing precursor, and where the cleaning gas mixture removes contaminants from interior surfaces of the processing chamber that are exposed to the cleaning gas mixture. The methods may also include the steps of removing the reaction products of the cleaning gas mixture from the process chamber, and providing a substrate to the process chamber following the evacuation of the reaction products from the process chamber. The cleaning gas mixture may include one or more hydrofluoronated ethers, and the contaminants may include one or more tin-containing contaminants. | 04-21-2011 |
20110127660 | METHODS AND MATERIALS FOR THE REDUCTION AND CONTROL OF MOISTURE AND OXYGEN IN OLED DEVICES - Embodiments of the invention provide an electronic device which may include an interior compartment housing at least one electronic component that may be reactive to target impurities. The electronic component may include at least a cathode and an anode. A purifier material may be interspersed within a conducting polymer layer between the cathode and the anode. The purifier material may decrease target impurities within the interior compartment of the electronic device from a first level to a second level. | 06-02-2011 |
20120003819 | Methods and apparatus for selective epitaxy of si-containing materials and substitutionally doped crystalline si-containing material - The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions. | 01-05-2012 |
20120024223 | Thin films and methods of making them using cyclohexasilane - Cyclohexasilane is used in chemical vapor deposition methods to deposit epitaxial silicon-containing films over substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using cyclohexasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions. | 02-02-2012 |
20140060571 | IN-SITU GENERATION OF THE MOLECULAR ETCHER CARBONYL FLUORIDE OR ANY OF ITS VARIANTS AND ITS USE - The molecular etcher carbonyl fluoride (COF | 03-06-2014 |
20140060574 | IN-SITU TCO CHAMBER CLEAN - The present invention discloses new chamber clean chemistries for low temperature, gas phase, in-situ removal of fluorine doped tin oxide (FTO) films. These new in-situ cleaning chemistries will enable solar glass and low-emissivity glass manufacturers to improve the quality of FTO films produced, as well as reduce costs associated manual cleaning of FTO deposition systems. The end result is increased production throughput and better quality FTO films. This is achieved by using gas phase, in-situ cleaning molecules, such as, but not limited to, HI, CH | 03-06-2014 |