Patent application number | Description | Published |
20100156277 | ENCAPSULATED RGB OLEDS HAVING ENHANCED OPTICAL OUTPUT - Methods of making an integrated barrier stack and optical enhancement layer for protecting and improving the light out coupling of an encapsulated OLED are described. The method includes optimizing the thickness of various layers including the initial inorganic barrier layer and the inorganic barrier layer and polymeric decoupling layer for the barrier stack. The thickness is optimized for at least one of maximum efficiency, minimum dispersion, or minimum spectral shift so that the encapsulated OLED has enhanced light outcoupling compared to the bare OLED. | 06-24-2010 |
20100159792 | ENCAPSULATED WHITE OLEDS HAVING ENHANCED OPTICAL OUTPUT - Methods of making an integrated barrier stack and optical enhancement layer for protecting and improving the light out coupling of encapsulated white OLEDs are described. The method includes optimizing the thickness of various layers including one or more of the plasma protective layer, the initial organic layer, the initial inorganic barrier layer, and the inorganic barrier layer and polymeric decoupling layer for the barrier stack. The thickness is optimized for at least one of total efficiency, or intentional color point shift so that the encapsulated OLED has enhanced light outcoupling compared to the bare OLED. | 06-24-2010 |
20100167002 | METHOD FOR ENCAPSULATING ENVIRONMENTALLY SENSITIVE DEVICES - Methods of sealing environmentally sensitive devices and vacuum insulation panels are described. One method includes: providing first and second substrates; placing the environmentally sensitive device between the first and second substrates; sealing the first and second substrates together with an adhesive, the adhesive having an exposed portion; and covering the exposed portion of the adhesive with a barrier layer, or with a barrier stack comprising at least one decoupling layer and at least one barrier layer. | 07-01-2010 |
20120080092 | HIGH EFFICIENCY SOLAR CELL DEVICE WITH GALLIUM ARSENIDE ABSORBER LAYER - Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer. | 04-05-2012 |
20120080753 | GALLIUM ARSENIDE BASED MATERIALS USED IN THIN FILM TRANSISTOR APPLICATIONS - Embodiments of the invention provide a method of forming a group III-V material utilized in thin film transistor devices. In one embodiment, a gallium arsenide based (GaAs) layer with or without dopants formed from a solution based precursor may be utilized in thin film transistor devices. The gallium arsenide based (GaAs) layer formed from the solution based precursor may be incorporated in thin film transistor devices to improve device performance and device speed. In one embodiment, a thin film transistor structure includes a gate insulator layer disposed on a substrate, a GaAs based layer disposed over the gate insulator layer, and a source-drain metal electrode layer disposed adjacent to the GaAs based layer. | 04-05-2012 |
20150147879 | ULTRA-THIN STRUCTURE TO PROTECT COPPER AND METHOD OF PREPARATION - Methods of depositing thin, low dielectric constant layers that are effective diffusion barriers on metal interconnects of semiconductor circuits are described. A self-assembled monolayer (SAM) of molecules each having a head moiety and a tail moiety are deposited on the metal. The SAM molecules self-align, wherein the head moiety is formulated to selectively bond to the metal layer leaving the tail moiety disposed at a distal end of the molecule. A dielectric layer is subsequently deposited on the SAM, chemically bonding to the tail moiety of the SAM molecules. | 05-28-2015 |
20150162214 | Methods Of Selective Layer Deposition - Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed. | 06-11-2015 |
20150275364 | Cyclic Spike Anneal Chemical Exposure For Low Thermal Budget Processing - Provided are apparatus and methods for the sequential deposition and annealing of a film within a single processing chamber. An energy source positioned within the processing chamber in an area isolated from process gases can be used to rapidly form and decompose a film on the substrate without damaging underlying layers due to exceeding the thermal budget of the device being formed. | 10-01-2015 |