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| 20090063495 | VOLUME MAPPING BY BLADE SLOT - A system and method includes providing a chassis comprising multiple slots, with each slot having a unique slot number assigned thereto. Multiple servers, each having at least one globally unique identifier associated therewith, are provided to plug into one or more of the slots. At least one storage device is provided having one or more storage volumes. To map volumes to specific servers, a volume may be assigned to a slot by identifying a slot number associated with the slot. This slot may then be mapped to a globally unique identifier associated with a server plugged into the slot. In selected embodiments, the globally unique identifier includes a WWNN, a WWPN, or other unique identifier. | 03-05-2009 |
| 20110072230 | ON DEMAND STORAGE GROUP MANAGEMENT WITH RECAPTURE - A method to dynamically adjust the amount of free space in a storage group is disclosed herein. In certain embodiments, such a method may include monitoring the amount of free space in an active storage group. The method may further include maintaining an overflow storage group containing unused volumes. When the free space in the active storage group falls below a lower threshold value, the method may automatically move a volume from the overflow storage group to the active storage group. Conversely, when the free space in the active storage group exceeds an upper threshold value, the method may automatically transfer data from a volume in the active storage group to other volumes in the active storage group, and move the volume from the active storage group to the overflow storage group. A corresponding computer program product and apparatus are also disclosed herein. | 03-24-2011 |
| 20120203995 | ON DEMAND STORAGE GROUP MANAGEMENT WITH RECAPTURE - A method to dynamically adjust the amount of free space in a storage group is disclosed herein. In certain embodiments, such a method may include monitoring the amount of free space in an active storage group. The method may further include maintaining an overflow storage group containing unused volumes. When the free space in the active storage group falls below a lower threshold value, the method may automatically move a volume from the overflow storage group to the active storage group. Conversely, when the free space in the active storage group exceeds an upper threshold value, the method may automatically transfer data from a volume in the active storage group to other volumes in the active storage group, and move the volume from the active storage group to the overflow storage group. A corresponding computer program product and apparatus are also disclosed herein. | 08-09-2012 |
| 20130024640 | Virtual Logical Volume for Overflow Storage of Special Data Sets - Method and system embodiments for facilitating overflow storage of special data sets that reside on a single logical volume are provided. A virtual logical volume is created from unallocated memory units across a plurality of logical volumes in a volume group. The virtual logical volume appears the same as any one of the logical volumes in the volume group to an external client. Upon receipt of a special data set that must reside in a single logical volume, an attempt is first made to allocate the special data set to one of the logical volumes in the volume group. If that allocation attempt fails, the special data set is allocated to the virtual logical volume. The virtual logical volume may be created only upon the failure to allocate the special data set to one of the logical volumes, and may be destroyed if sufficient space in one of the logical volumes is freed up to transfer the special data set. Creation of the virtual logical volume may be reserved for only critical special data sets whose failure would result in a storage system outage. | 01-24-2013 |
| 20130031069 | ALLOWING WRITES TO COMPLETE WITHOUT OBTAINING A WRITE LOCK TO A FILE - Provided are a computer program product, system, and method for allowing writes to complete without obtaining a write lock to a file. A lock is provided to a first request, comprising a read or write request, to access the file. A second write request is received while the first request maintains the lock. A temporary file associated with the file for the second write request is created. The second write request is controlled to write to the temporary file while the lock is held by the first request. In response to completing the first request, the lock is granted to the second write request to write the data in the temporary file to the file. | 01-31-2013 |
| 20130054924 | PREEMPTIVELY ALLOCATING EXTENTS TO A DATA SET - Provided are a computer program product, system, and method for preemptively allocating extents to a data set in a storage system. A data set is comprised of a plurality of extents configured in at least one volume in the storage system. A first extent is allocated to the data set in a first volume to extend the data set. A determination is made as to whether a second extent can be allocated to the data set in the first volume in response to the allocating of the first extent. The second extent in a second volume is allocated for the data set in response to determining that the second extent cannot be allocated to the data set in the first volume. | 02-28-2013 |
| 20130173542 | REPLICATION OF DATA SETS - An approach that allows for replicating data sets that have different attributes. A logical copy operation may not be possible from a source data set to a target data set due to differences between their respective attributes. The source data set may have obsolete attributes that prevent a logical copy to a target data set with supported attributes. The presented solution may involve allocating an intermediate data set with the same attributes as the source data set. The intermediate data set may be allocated with the same obsolete attributes as the source data set. The approach may also involve executing a logical copy operation from the source data set to the intermediate data set. A standard copy operation that reformats the data may be executed on the intermediate data set to the target data set. | 07-04-2013 |
| 20130179660 | Virtual Logical Volume for Overflow Storage of Special Data Sets - System embodiments for facilitating overflow storage of special data sets that reside on a single logical volume are provided. A virtual logical volume is created from unallocated memory units across a plurality of logical volumes in a volume group. The virtual logical volume appears the same as any one of the logical volumes in the volume group to an external client. Upon receipt of a special data set that must reside in a single logical volume, an attempt is first made to allocate the special data set to one of the logical volumes in the volume group. If that allocation attempt fails, the special data set is allocated to the virtual logical volume. The virtual logical volume may be created only upon the failure to allocate the special data set to one of the logical volumes, and may be destroyed if sufficient space in one of the logical volumes is freed up to transfer the special data set. Creation of the virtual logical volume may be reserved for only critical special data sets whose failure would result in a storage system outage. | 07-11-2013 |
| 20140040586 | Orphan Storage Release - A method, system and computer readable medium that identify orphan storage and release the orphaned storage before application or system outages can result. More specifically, in certain embodiments, a method, system and computer readable medium periodically scan through common memory storage and identifies those areas that are no longer associated with a running task or have been allocated for longer than a running task with a matching task address. These areas are then identified as potentially orphaned storage locations. | 02-06-2014 |
| 20140201482 | SELECTING FIRST DATA SETS IN A FIRST STORAGE GROUP TO SWAP WITH SECOND DATA SETS IN A SECOND STORAGE GROUP - Provided are a computer program product, system, and method for selecting first data sets in a first storage group to swap with second data sets in a second storage group. First data sets are stored in a first storage group and second data sets are stored in a second storage group. A determination is made for a value for each of at least one of the first data sets based on at least one priority of at least one job processing I/O activity at the first data set. At least one of the first data sets for which the value was determined is selected to migrate to the second storage group based on the value. | 07-17-2014 |
| 20140201487 | SELECTING FIRST DATA SETS IN A FIRST STORAGE GROUP TO SWAP WITH SECOND DATA SETS IN A SECOND STORAGE GROUP - Provided are a computer program product, system, and method for selecting first data sets in a first storage group to swap with second data sets in a second storage group. First data sets are stored in a first storage group and second data sets are stored in a second storage group. A determination is made for a value for each of at least one of the first data sets based on at least one priority of at least one job processing I/O activity at the first data set. At least one of the first data sets for which the value was determined is selected to migrate to the second storage group based on the value. | 07-17-2014 |
| 20140223130 | ALLOCATING ADDITIONAL REQUESTED STORAGE SPACE FOR A DATA SET IN A FIRST MANAGED SPACE IN A SECOND MANAGED SPACE - Provided are a computer program product, system, and method for allocating additional requested storage space for a data set in a first managed space in a second managed space. A request for additional storage space is received for a requested data set stored in a first managed space in the storage. A revised amount of storage space for the requested data set comprises at least an amount of space currently allocated to the requested data set in the first managed space and the requested additional storage space. If the revised amount of storage space exceeds a value, then allocation is made of the revised amount of storage space in allocated storage space in a second managed space of the storage. The data set is stored in the allocated storage space in the second managed space. | 08-07-2014 |
| 20140223133 | ALLOCATING ADDITIONAL REQUESTED STORAGE SPACE FOR A DATA SET IN A FIRST MANAGED SPACE IN A SECOND MANAGED SPACE - Provided are a computer program product, system, and method for allocating additional requested storage space for a data set in a first managed space in a second managed space. A request for additional storage space is received for a requested data set stored in a first managed space in the storage. A revised amount of storage space for the requested data set comprises at least an amount of space currently allocated to the requested data set in the first managed space and the requested additional storage space. If the revised amount of storage space exceeds a value, then allocation is made of the revised amount of storage space in allocated storage space in a second managed space of the storage. The data set is stored in the allocated storage space in the second managed space. | 08-07-2014 |
| 20140304483 | VOLUME EXTENT ALLOCATION - A method of and system for processing an extend request for a data set in a storage facility is disclosed. The method and system may include receiving the extend request. The extend request may include a new extent allocation amount for the data set. The data set may be associated with a number of volumes in the storage facility. The method and system may include apportioning the new extent allocation amount among fractional amounts. The method and system may include allocating the fractional amounts. | 10-09-2014 |
| 20140310454 | DATA SET MANAGEMENT - A method of and system for managing a data set stored on units of storage space in a storage facility is disclosed. The method and system may include identifying prospect extents of the data set. The prospect extents may include a first prospect extent stored on a first unit of storage space and a second prospect extent stored on a second unit of storage space. The method and system may include congregating the first prospect extent and the second prospect extent on a destination unit of storage space in the storage facility. | 10-16-2014 |
| 20150026422 | MANAGING DATA SETS OF A STORAGE SYSTEM - A method of and system for managing data sets of a storage facility is disclosed. The method and system may include copying a first data set of a first unit of storage space. A second data set in a second unit of storage space may be created from copying the first data set. The method and system may include copying the second data set of the second unit of storage space. A third data set in a third unit of storage space may be created from copying the second data set. The second data set may be verified. Verification may be performed by comparing the third data set with the first data set. It may be determined whether the third data set matches the first data set. The first and third data sets may be deleted in response to the third data set matching the first data set. | 01-22-2015 |
| 20150134630 | ALLOWING WRITES TO COMPLETE WITHOUT OBTAINING A WRITE LOCK TO A FILE - Provided are a computer program product, system, and method for allowing writes to complete without obtaining a write lock to a file. A lock is provided to a first request, comprising a read or write request, to access the file. A second write request is received while the first request maintains the lock. A temporary file associated with the file for the second write request is created. The second write request is controlled to write to the temporary file while the lock is held by the first request. In response to completing the first request, the lock is granted to the second write request to write the data in the temporary file to the file. | 05-14-2015 |
| 20150355840 | VOLUME CLASS MANAGEMENT - A method for setting up and managing large numbers of storage volumes is disclosed. In one embodiment, such a method enables a user to establish a volume class comprising various volume attributes. The method further enables the user to assign a volume or range of volumes to the volume class. Once the volume or range of volumes is assigned to the volume class, the method automatically sets up, without user invention, the volumes with the attributes designated for the volume class. When a new volume is assigned to the volume class, the method automatically sets up the new volume with the attributes of the volume class, including automatically calculating a VTOC size for the new volume based on VTOC sizes for volumes already assigned to the volume class. A corresponding apparatus and computer program product are also disclosed. | 12-10-2015 |
| 20160070479 | VOLUME EXTENT ALLOCATION - A computer program product for processing an extend request for a data set in a storage facility is disclosed. The computer program product may include receiving the extend request. The extend request may include a new extent allocation amount for the data set. The data set may be associated with a number of volumes in the storage facility. The computer program product may include apportioning the new extent allocation amount among fractional amounts. The computer program product may include allocating the fractional amounts. | 03-10-2016 |
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| 20150206456 | INJECTION SITE TRAINING SYSTEM - An injection apparatus and training system for prophylactic, curative, therapeutic, acupuncture, or cosmetic injection training and certification. In an embodiment, an injection training system is described that includes a testing tool having a needle and a position sensor, where the position sensor is configured to obtain position information of the testing tool. The system also includes an injection apparatus configured to receive a simulated injection by the testing tool. The system includes a display device configured to receive the position information and to display position data reflective of the position information. | 07-23-2015 |
| 20150262512 | AUTOMATED DETECTION OF PERFORMANCE CHARACTERISTICS IN AN INJECTION TRAINING SYSTEM - Various systems and methods are provided for injection training by collecting, processing, analyzing and displaying measured information associated with the delivery of an injection. Sensor-based measurements of a syringe's position and orientation in three-dimensional space are obtained and processed to provide metrics of a trainee's injection performance. The measurements can be combined with a digital model of a training apparatus to deliver a computer-generated, graphical depiction of the training injection, enabling visualization of the injection from perspectives unavailable in the physical world. The training injection execution, as reflected in the measured sensor-based data, can be reviewed and analyzed at times after, and in locations different than, the time and location of the training injection. Additionally, injection training data associated with multiple training injections can be aggregated and analyzed for, among other things, trends in performance. | 09-17-2015 |
| 20150348443 | SYSTEM FOR COSMETIC AND THERAPEUTIC TRAINING - Systems and methods are disclosed for an apparatus and method for practicing injection techniques through an injectable apparatus. The injectable apparatus may contain a camera that is configured to detect the intensity and color of light attenuated from a testing tool after it is injected into a simulated human or animal body parts. A training tool may be connected to a user display device to generate a display of the injection apparatus as well as the performance parameters of a trainee. | 12-03-2015 |
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| 20140074861 | System and Method for Combining Inputs to Generate and Modify Playlists - Systems, methods, and computer readable storage mediums are provided for selecting a media content object for a user using a combination of inputs. A media input seed associated with a user is obtained. A plurality of channels of media content objects is obtained. At least one of the plurality of channels is associated with the media input seed. Also, in some embodiments, each media content object of each of those channels has a score specific to that channel. A combination score for a respective media content object is calculated based at least in part on that respective media content object's channel specific score for each of at least two of the plurality of channels. Then at least some of the media content objects are ranked based at least in part on their respective combination scores. Finally, at least one ranked media content object is then selected for transmission. | 03-13-2014 |
| 20140281978 | System and Method of Personalizing Playlists Using Memory-Based Collaborative Filtering - Systems and methods are provided for personalizing new song suggestions for a user. A plurality of users provides thumbs up and thumbs down ratings for a pair of songs (song A and B). A first aggregate rating for song B is calculated based on ratings given to song A by all of the users that gave a like rating to song A. Similarly, a second aggregate rating is calculated for song B based on ratings given to song B by all users that gave a dislike rating to song A. Then a user that has not previously rated song B, supplies a rating for song A. A prediction is performed of how the user will rate song B based on the user's rating of song A. For example, the first aggregate rating for song B is used if the user rated song A positively. | 09-18-2014 |
| 20160092559 | COUNTRY-SPECIFIC CONTENT RECOMMENDATIONS IN VIEW OF SPARSE COUNTRY DATA - A content server system provides a user of a client device with a playlist of content, such as streamed audio. The provided playlist is customized for the particular country of the user, even if the content server system has only recently begun to provide content to that country. To customize the playlist for a country lacking a sufficient amount of country-specific statistical data, the content server system generates a number of non-country-specific channels, each channel recommending content according to its own criteria. The content server system generates a non-content specific playlist by combining the channels. The content server system also generates, using the statistics for the country of the user, a country-specific channel that is specific to that country. The content server system generates a country-specific playlist by combining the non-country-specific playlist with the country-specific channel, e.g., according to the amount of country-specific statistics that are available. | 03-31-2016 |
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| 20080300166 | Treatment of Melanoma with Alpha Thymosin Peptides - A method of treating melanoma or a metastasis thereof in a human patient by administering a melanoma-treating effective amount of an alpha thymosin peptide to a human melanoma patient, wherein the human melanoma patient does not have a substantially elevated LDH blood level. | 12-04-2008 |
| 20100016211 | Treatment of Melanoma With Alpha Thymosin Peptides - A method of treating melanoma or a metastasis thereof in a human patient by administering a melanoma-treating effective amount of an alpha thymosin peptide to a human melanoma patient, wherein the human melanoma patient does not have a substantially elevated LDH blood level. | 01-21-2010 |
| 20100086622 | METHOD OF TREATING OR PREVENTING TISSUE DETERIORATION, INJURY OR DAMAGE DUE TO DISEASE OF MUCOSA - An immunomodulatory compound is utilized to treat mucosa disease. | 04-08-2010 |
| 20100197595 | TREATMENT OF MELANOMA WITH ALPHA THYMOSIN PEPTIDES - A method of treating melanoma or a metastasis thereof in a human patient by administering a melanoma-treating effective amount of an alpha thymosin peptide to a human melanoma patient, wherein the human melanoma patient does not have a substantially elevated LDH blood level. | 08-05-2010 |
| 20100267637 | TREATMENT OF MELANOMA WITH ALPHA THYMOSIN PEPTIDES IN COMBINATION WITH A KINASE INHIBITOR - Melanoma or a metastasis thereof is treated in a human patient in a combination therapy which includes administering a melanoma-treating combination to a human melanoma patient during a treatment regimen, the combination including an alpha thymosin peptide and a kinase inhibitor. | 10-21-2010 |
| 20100317583 | TREATMENT OF MELANOMA WITH ALPHA THYMOSIN PEPTIDES IN COMBINATION WITH AN ANTINEOPLASTIC HEAT SHOCK APOPTOSIS ACTIVATOR (HSAA) - Melanoma or a metastasis thereof is treated in a human patient in a combination therapy which includes administering a melanoma-treating combination to a human melanoma patient during a treatment regimen, the combination including an alpha thymosin peptide and an antineoplastic heat shock apoptosis activator (HSAA) such as STA-4783 (and optionally an antineoplastic cytotoxic chemotherapeutic agent such as paclitaxel), and/or optionally one or more additional anti-melanoma agents. | 12-16-2010 |
| 20100330093 | TREATMENT OF MELANOMA WITH ALPHA THYMOSIN PEPTIDES IN COMBINATION WITH ANTIBODIES AGAINST CYTOTOXIC T LYMPHOCYTE-ASSOCIATED ANTIGEN 4 (CTLA4) - Melanoma or a metastasis thereof is treated in a human patient in a combination therapy which includes administering a melanoma-treating combination to a human melanoma patient during a treatment regimen, the combination including an alpha thymosin peptide and antibodies against cytotoxic T lymphocyte-associated antigen 4 (CTLA4). | 12-30-2010 |
| 20110117211 | Method of Treating or Preventing Tissue Deterioration, Injury or Damage Due to Disease of Mucosa - An immunomodulatory compound is utilized to treat mucosa disease. | 05-19-2011 |
| 20110200558 | Treatment or Prevention of Hepatitis C with Immunomodulator Compounds - A method of treatment for treating or preventing hepatitis C (HepC) in a target subject, including administering to the target subject an effective amount of an immunomodulator compound of Formula A | 08-18-2011 |
| 20110245316 | PREVENTION OR DELAY OF ONSET OF ORAL MUCOSITIS - The present invention provides a method for preventing or delaying the onset of oral mucositis, including the onset of ulcerative or severe OM, in a patient receiving cancer therapy. The method comprises administering to the patient an effective regimen of γ-D-glutamyl-L-tryptophan (SCV-07) over the course of therapy. The regimen, which includes scheduled doses of SCV-07 with respect to radiation exposure and/or chemotherapy, is effective for preventing or delaying the onset of OM. In accordance with the invention, the patient is more able to complete the planned course of cancer therapy (including chemotherapy and/or radiation therapy), by maintaining a sufficient nutritional state, and by avoiding the significant pain and discomfort associated with OM. | 10-06-2011 |
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| 20110150822 | PHEROMONE COMPOSITIONS AND METHODS OF USE - Pheromone compositions based on a combination of squalene, linoleic acid and 1-docosanol are described. The compositions are useful for behavior modification in mammals that exhibit undesirable or harmful stress-related behaviors. | 06-23-2011 |
| 20120149748 | Pharmaceutical Cream Compositions and Methods of Use - The present invention provides pharmaceutical cream compositions comprising oxymetazoline and methods for treating rosacea and other skin disorders as described herein using the above cream compositions. | 06-14-2012 |
| 20130116220 | Polymeric Pheromone Formulation and Method of Use to Calm Stress-Related Behavior in Mammals over an Extended Period of Time - Pheromone compositions comprising a combination of squalene, linoleic acid and 1-docosanol are described, along with methods of using the pheromone compositions to modify behavior in mammals. The compositions are useful for behavior modification in mammals that exhibit undesirable or harmful stress-related behaviors. | 05-09-2013 |
| 20130261193 | Pheromone Compositions and Methods of Use - Pheromone compositions based on a combination of squalene, linoleic acid and 1-docosanol are described. The compositions are useful for behavior modification in mammals that exhibit undesirable or harmful stress-related behaviors. | 10-03-2013 |
| 20150045403 | Pharmaceutical Cream Compositions and Methods of Use - Embodiments relating to cream formulations as well as oxymetazoline creams and methods for treating rosacea and symptoms associated with rosacea, including, for example, papules, pustules, phymas (skin thickening), telangiectasias or erythema associated with rosacea, other skin erythemas, telangiectasias, purpura or the like, and other manifestations associated therewith; other inflammatory conditions of the skin including, but not limited to, keratosis pilaris, lupus miliaris dissemniatus faciei, eczema, dermatitis, such as contact dermatitis, atopic dermatitis, seborrheic dermatitis, nummular dermatitis, generalized exfoliative dermatitis, statis dermatitis, neurodermatitis, lichen simplex chronicus, xerosis and xerotic dermatitis, dyshidrosis and dyshidrotic dermatitis, asteototic dermatitis or other conditions characterized by sensitive skin or a disturbance of the epidermal barrier; disorders characterized by rough, dry, cracked or fissured skin, disorders characterized by hyperkeratotic skin such as keratodermas and ichthyosisis and ichthyosiform dermatoses; disorders of hair follicles and sebaceous glands, such as acne, perioral dermatitis, and pseudofolliculitis barbae; disorders of sweat glands, such as miliaria, including, but not limited to, miliaria crystallina, miliaria rubra, miliaria profunda, miliaria pustulosa; sunburn, chronic actinic damage, poikiloderma, radiation dermatitis, actinic purpura (“solar purpura”); other inflammatory dermatoses, reactions and conditions of the skin, including, but not limited to, psoriasis, drug eruptions, erythema multiforme, erythema nodosum, and granuloma annulare; diseases and conditions characterized by bleeding or bruising such as petechiae, ecchymosis, purpura and the like including any accumulation of blood in the skin due to vascular extravasation, irrespective of size or cause, bleeding or bruising due to any skin injury which may include any trauma including surgical or procedural trauma; infection, inflammatory dermatoses or inflammation due to any cause using such creams are described herein. | 02-12-2015 |
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| 20140020797 | MAGNETIC FIELD ANNEALING FOR IMPROVED CREEP RESISTANCE - The method provides heat-resistant chromia- or alumina-forming Fe-, Fe(Ni), Ni(Fe), or Ni-based alloys having improved creep resistance. A precursor is provided containing preselected constituents of a chromia- or alumina-forming Fe-, Fe(Ni), Ni(Fe), or Ni-based alloy, at least one of the constituents for forming a nanoscale precipitate MaXb where M is Cr, Nb, Ti, V, Zr, or Hf, individually and in combination, and X is C, N, O, B, individually and in combination, a=1 to 23 and b=1 to 6. The precursor is annealed at a temperature of 1000-1500° C. for 1-48 h in the presence of a magnetic field of at least 5 Tesla to enhance supersaturation of the M | 01-23-2014 |
| 20140038034 | LIGNIN-BASED ACTIVE ANODE MATERIALS SYNTHESIZED FROM LOW-COST RENEWABLE RESOURCES - A method of making an anode includes the steps of providing fibers from a carbonaceous precursor, the carbon fibers having a glass transition temperature T | 02-06-2014 |
| 20140038042 | HIGH CAPACITY MONOLITHIC COMPOSITE SI/CARBON FIBER ELECTRODE ARCHITECTURES SYNTHESIZED FROM LOW COST MATERIALS AND PROCESS TECHNOLOGIES - A composite Si-carbon fiber comprising a carbon matrix material with 1-90 wt % silicon embedded therein. The composite carbon fibers are incorporated into electrodes for batteries. The battery can be a lithium ion battery. A method of making an electrode incorporating composite Si-carbon fibers is also disclosed. | 02-06-2014 |
| 20140090751 | Hf-Co-B Alloys as Permanent Magnet Materials - An alloy composition is composed essentially of Hf | 04-03-2014 |
| 20140251506 | IRON-BASED COMPOSITION FOR MAGNETOCALORIC EFFECT (MCE) APPLICATIONS AND METHOD OF MAKING A SINGLE CRYSTAL - A method of making a single crystal comprises heating a material comprising magnetic anisotropy to a temperature T sufficient to form a melt of the material. A magnetic field of at least about 1 Tesla is applied to the melt at the temperature T, where a magnetic free energy difference ΔG | 09-11-2014 |
| 20140269151 | EMAT ENHANCED DISPERSION OF PARTICLES IN LIQUID - Particulate matter is dispersed in a fluid material. A sample including a first material in a fluid state and second material comprising particulate matter are placed into a chamber. The second material is spatially dispersed in the first material utilizing EMAT force. The dispersion process continues until spatial distribution of the second material enables the sample to meet a specified criterion. The chamber and/or the sample is electrically conductive. The EMAT force is generated by placing the chamber coaxially within an induction coil driven by an applied alternating current and placing the chamber and induction coil coaxially within a high field magnetic. The EMAT force is coupled to the sample without physical contact to the sample or to the chamber, by another physical object. Batch and continuous processing are utilized. The chamber may be folded within the bore of the magnet. Acoustic force frequency and/or temperature may be controlled. | 09-18-2014 |
| 20150183138 | RAPID NON-CONTACT ENERGY TRANSFER FOR ADDITIVE MANUFACTURING DRIVEN HIGH INTENSITY ELECTROMAGNETIC FIELDS - A method and apparatus for additive manufacturing that includes a nozzle and/or barrel for extruding a plastic material and a supply of polymeric working material provided to the nozzle, wherein the polymeric working material is magnetically susceptible and/or electrically conductive. A magneto-dynamic heater is provided for producing a time varying, high flux, frequency sweeping, alternating magnetic field in the vicinity of the nozzle to penetrate into and couple the working material to heat the material through at least one of an induced transient magnetic domain and an induced, annular current. | 07-02-2015 |
| 20150183159 | LARGE SCALE ROOM TEMPERATURE POLYMER ADVANCED MANUFACTURING - A manufactured component, method and apparatus for advanced manufacturing that includes a nozzle for extruding a working material, wherein the polymeric working material includes a carbon fiber reinforced polymer. The build of the component takes place on a work surface at atmospheric temperatures. | 07-02-2015 |
| 20150183164 | RAPID ELECTRO-MAGNETIC HEATING OF NOZZLE IN POLYMER EXTRUSION BASED DEPOSITION FOR ADDITIVE MANUFACTURING - A method and apparatus for additive manufacturing that includes a nozzle for extruding a plastic material and a supply of polymeric working material provided to the nozzle, wherein the polymeric working material is magnetically susceptible and/or electrically conductive. A magneto-dynamic heater is provided for producing a time varying, high flux, frequency sweeping, alternating magnetic field in the vicinity of the nozzle to penetrate into and couple the working material to heat the material through at least one of an induced transient magnetic domain and an induced, annular current. | 07-02-2015 |
| 20150291833 | REACTIVE POLYMER FUSED DEPOSITION MANUFACTURING - Methods and compositions for additive manufacturing that include reactive or thermosetting polymers, such as urethanes and epoxies. The polymers are melted, partially cross-linked prior to the depositing, deposited to form a component object, solidified, and fully cross-linked. These polymers form networks of chemical bonds that span the deposited layers. Application of a directional electromagnetic field can be applied to aromatic polymers after deposition to align the polymers for improved bonding between the deposited layers. | 10-15-2015 |
| 20150380158 | APPLIED MAGNETIC FIELD SYNTHESIS AND PROCESSING OF IRON NITRIDE MAGNETIC MATERIALS - A method may include annealing a material including iron and nitrogen in the presence of an applied magnetic field to form at least one Fe | 12-31-2015 |
| 20160057814 | AC INDUCTION FIELD HEATING OF GRAPHITE FOAM - A magneto-energy apparatus includes an electromagnetic field source for generating a time-varying electromagnetic field. A graphite foam conductor is disposed within the electromagnetic field. The graphite foam when exposed to the time-varying electromagnetic field conducts an induced electric current, the electric current heating the graphite foam. An energy conversion device utilizes heat energy from the heated graphite foam to perform a heat energy consuming function. A device for heating a fluid and a method of converting energy are also disclosed. | 02-25-2016 |
| 20160057830 | INFRARED SIGNAL GENERATION FROM AC INDUCTION FIELD HEATING OF GRAPHITE FOAM - A magneto-energy apparatus includes an electromagnetic field source for generating a time-varying electromagnetic field. A graphite foam conductor is disposed within the electromagnetic field. The graphite foam when exposed to the time-varying electromagnetic field conducts an induced electric current, the electric current heating the graphite foam to produce light. An energy conversion device utilizes light energy from the heated graphite foam to perform a light energy consuming function. A device for producing light and a method of converting energy are also disclosed. | 02-25-2016 |
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| 20080237719 | Multi-gate structure and method of doping same - A multi-gate structure includes a substrate ( | 10-02-2008 |
| 20090020792 | ISOLATED TRI-GATE TRANSISTOR FABRICATED ON BULK SUBSTRATE - A method of forming an isolated tri-gate semiconductor body comprises patterning a bulk substrate to form a fin structure, depositing an insulating material around the fin structure, recessing the insulating material to expose a portion of the fin structure that will be used for the tri-gate semiconductor body, depositing a nitride cap over the exposed portion of the fin structure to protect the exposed portion of the fin structure, and carrying out a thermal oxidation process to oxidize an unprotected portion of the fin structure below the nitride cap. The oxidized portion of the fin isolates the semiconductor body that is being protected by the nitride cap. The nitride cap may then be removed. The thermal oxidation process may comprise annealing the substrate at a temperature between around 900° C. and around 1100° C. for a time duration between around 0.5 hours and around 3 hours. | 01-22-2009 |
| 20090061572 | NONPLANAR SEMICONDUCTOR DEVICE WITH PARTIALLY OR FULLY WRAPPED AROUND GATE ELECTRODE AND METHODS OF FABRICATION - A nonplanar semiconductor device and its method of fabrication is described. The nonplanar semiconductor device includes a semiconductor body having a top surface opposite a bottom surface formed above an insulating substrate wherein the semiconductor body has a pair laterally opposite sidewalls. A gate dielectric is formed on the top surface of the semiconductor body on the laterally opposite sidewalls of the semiconductor body and on at least a portion of the bottom surface of semiconductor body. A gate electrode is formed on the gate dielectric, on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of semiconductor body and beneath the gate dielectric on the bottom surface of the semiconductor body. A pair source/drain regions are formed in the semiconductor body on opposite sides of the gate electrode. | 03-05-2009 |
| 20100059821 | Isolated tri-gate transistor fabricated on bulk substrate - A method of forming an isolated tri-gate semiconductor body comprises patterning a bulk substrate to form a fin structure, depositing an insulating material around the fin structure, recessing the insulating material to expose a portion of the fin structure that will be used for the tri-gate semiconductor body, depositing a nitride cap over the exposed portion of the fin structure to protect the exposed portion of the fin structure, and carrying out a thermal oxidation process to oxidize an unprotected portion of the fin structure below the nitride cap. The oxidized portion of the fin isolates the semiconductor body that is being protected by the nitride cap. The nitride cap may then be removed. The thermal oxidation process may comprise annealing the substrate at a temperature between around 900° C. and around 1100° C. for a time duration between around 0.5 hours and around 3 hours. | 03-11-2010 |
| 20110020987 | NONPLANAR SEMICONDUCTOR DEVICE WITH PARTIALLY OR FULLY WRAPPED AROUND GATE ELECTRODE AND METHODS OF FABRICATION - A nonplanar semiconductor device and its method of fabrication is described. The nonplanar semiconductor device includes a semiconductor body having a top surface opposite a bottom surface formed above an insulating substrate wherein the semiconductor body has a pair laterally opposite sidewalls. A gate dielectric is formed on the top surface of the semiconductor body on the laterally opposite sidewalls of the semiconductor body and on at least a portion of the bottom surface of semiconductor body. A gate electrode is formed on the gate dielectric, on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of semiconductor body and beneath the gate dielectric on the bottom surface of the semiconductor body. A pair source/drain regions are formed in the semiconductor body on opposite sides of the gate electrode. | 01-27-2011 |
| 20120138886 | SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES - Methods of forming microelectronic structures are described. Embodiments of those methods include forming a nanowire device comprising a substrate comprising source/drain structures adjacent to spacers, and nanowire channel structures disposed between the spacers, wherein the nanowire channel structures are vertically stacked above each other. | 06-07-2012 |
| 20120161202 | JUNCTIONLESS ACCUMULATION-MODE DEVICES ON PROMINENT ARCHITECTURES, AND METHODS OF MAKING SAME - A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconducive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of making the JAM device include implantation and epitaxy. | 06-28-2012 |
| 20130313513 | SEMICONDUCTOR DEVICES HAVING MODULATED NANOWIRE COUNTS - Semiconductor devices having modulated nanowire counts and methods to form such devices are described. For example, a semiconductor structure includes a first semiconductor device having a plurality of nanowires disposed above a substrate and stacked in a first vertical plane with a first uppermost nanowire. A second semiconductor device has one or more nanowires disposed above the substrate and stacked in a second vertical plane with a second uppermost nanowire. The second semiconductor device includes one or more fewer nanowires than the first semiconductor device. The first and second uppermost nanowires are disposed in a same plane orthogonal to the first and second vertical planes. | 11-28-2013 |
| 20130320448 | SEMICONDUCTOR DEVICES HAVING THREE-DIMENSIONAL BODIES WITH MODULATED HEIGHTS - Semiconductor devices having three-dimensional bodies with modulated heights and methods to form such devices are described. For example, a semiconductor structure includes a first semiconductor device having a first semiconductor body disposed above a substrate. The first semiconductor body has a first height and an uppermost surface with a first horizontal plane. The semiconductor structure also includes a second semiconductor device having a second semiconductor body disposed above the substrate. The second semiconductor body has a second height and an uppermost surface with a second horizontal plane. The first and second horizontal planes are co-planar and the first and second heights are different. | 12-05-2013 |
| 20130320455 | SEMICONDUCTOR DEVICE WITH ISOLATED BODY PORTION - Semiconductor devices with isolated body portions are described. For example, a semiconductor structure includes a semiconductor body disposed above a semiconductor substrate. The semiconductor body includes a channel region and a pair of source and drain regions on either side of the channel region. An isolation pedestal is disposed between the semiconductor body and the semiconductor substrate. A gate electrode stack at least partially surrounds a portion of the channel region of the semiconductor body. | 12-05-2013 |
| 20130334572 | JUNCTIONLESS ACCUMULATION-MODE DEVICES ON DECOUPLED PROMINENT ARCHITECTURES - A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconducive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of making the JAM device include implantation and epitaxy. | 12-19-2013 |
| 20140001441 | INTEGRATION METHODS TO FABRICATE INTERNAL SPACERS FOR NANOWIRE DEVICES | 01-02-2014 |
| 20140001560 | ISOLATED AND BULK SEMICONDUCTOR DEVICES FORMED ON A SAME BULK SUBSTRATE | 01-02-2014 |
| 20140035059 | SEMICONDUCTOR DEVICE HAVING METALLIC SOURCE AND DRAIN REGIONS - Semiconductor devices having metallic source and drain regions are described. For example, a semiconductor device includes a gate electrode stack disposed above a semiconducting channel region of a substrate. Metallic source and drain regions are disposed above the substrate, on either side of the semiconducting channel region. Each of the metallic source and drain regions has a profile. A first semiconducting out-diffusion region is disposed in the substrate, between the semiconducting channel region and the metallic source region, and conformal with the profile of the metallic source region. A second semiconducting out-diffusion region is disposed in the substrate, between the semiconducting channel region and the metallic drain region, and conformal with the profile of the metallic drain region. | 02-06-2014 |
| 20140042386 | NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS - Nanowire structures having non-discrete source and drain regions are described. For example, a semiconductor device includes a plurality of vertically stacked nanowires disposed above a substrate. Each of the nanowires includes a discrete channel region disposed in the nanowire. A gate electrode stack surrounds the plurality of vertically stacked nanowires. A pair of non-discrete source and drain regions is disposed on either side of, and adjoining, the discrete channel regions of the plurality of vertically stacked nanowires. | 02-13-2014 |
| 20140138744 | TUNNELING FIELD EFFECT TRANSISTORS (TFETS) FOR CMOS ARCHITECTURES AND APPROACHES TO FABRICATING N-TYPE AND P-TYPE TFETS - Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region disposed above a substrate. The homojunction active region includes a relaxed Ge or GeSn body having an undoped channel region therein. The homojunction active region also includes doped source and drain regions disposed in the relaxed Ge or GeSn body, on either side of the channel region. The TFET also includes a gate stack disposed on the channel region, between the source and drain regions. The gate stack includes a gate dielectric portion and gate electrode portion. | 05-22-2014 |
| 20140197377 | CMOS NANOWIRE STRUCTURE - Complimentary metal-oxide-semiconductor nanowire structures are described. For example, a semiconductor structure includes a first semiconductor device. The first semiconductor device includes a first nanowire disposed above a substrate. The first nanowire has a mid-point a first distance above the substrate and includes a discrete channel region and source and drain regions on either side of the discrete channel region. A first gate electrode stack completely surrounds the discrete channel region of the first nanowire. The semiconductor structure also includes a second semiconductor device. The second semiconductor device includes a second nanowire disposed above the substrate. The second nanowire has a mid-point a second distance above the substrate and includes a discrete channel region and source and drain regions on either side of the discrete channel region. The first distance is different from the second distance. A second gate electrode stack completely surrounds the discrete channel region of the second nanowire. | 07-17-2014 |
| 20140262707 | NANOWIRE-BASED MECHANICAL SWITCHING DEVICE - Nanowire-based mechanical switching devices are described. For example, a nanowire relay includes a nanowire disposed in a void disposed above a substrate. The nanowire has an anchored portion and a suspended portion. A first gate electrode is disposed adjacent the void, and is spaced apart from the nanowire. A first conductive region is disposed adjacent the first gate electrode and adjacent the void, and is spaced apart from the nanowire. | 09-18-2014 |
| 20140264253 | LEAKAGE REDUCTION STRUCTURES FOR NANOWIRE TRANSISTORS - A nanowire device of the present description may include a highly doped underlayer formed between at least one nanowire transistor and the microelectronic substrate on which the nanowire transistors are formed, wherein the highly doped underlayer may reduce or substantially eliminate leakage and high gate capacitance which can occur at a bottom portion of a gate structure of the nanowire transistors. As the formation of the highly doped underlayer may result in gate inducted drain leakage at an interface between source structures and drain structures of the nanowire transistors, a thin layer of undoped or low doped material may be formed between the highly doped underlayer and the nanowire transistors. | 09-18-2014 |
| 20140326952 | SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES - Methods of forming microelectronic structures are described. Embodiments of those methods include forming a nanowire device comprising a substrate comprising source/drain structures adjacent to spacers, and nanowire channel structures disposed between the spacers, wherein the nanowire channel structures are vertically stacked above each other. | 11-06-2014 |
| 20150021553 | JUNCTIONLESS ACCUMULATION-MODE DEVICE ISOLATED FROM SEMICONDUCTIVE SUBSTRATE BY REVERSE-BIAS JUNCTION - A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconductive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of making the JAM device include implantation and epitaxy. | 01-22-2015 |
| 20150041847 | TUNNELING FIELD EFFECT TRANSISTORS (TFETS) FOR CMOS ARCHITECTURES AND APPROACHES TO FABRICATING N-TYPE AND P-TYPE TFETS - Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region disposed above a substrate. The homojunction active region includes a relaxed Ge or GeSn body having an undoped channel region therein. The homojunction active region also includes doped source and drain regions disposed in the relaxed Ge or GeSn body, on either side of the channel region. The TFET also includes a gate stack disposed on the channel region, between the source and drain regions. The gate stack includes a gate dielectric portion and gate electrode portion. | 02-12-2015 |
| 20150303258 | SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES - Methods of forming microelectronic structures are described. Embodiments of those methods include forming a nanowire device comprising a substrate comprising source/drain structures adjacent to spacers, and nanowire channel structures disposed between the spacers, wherein the nanowire channel structures are vertically stacked above each other. | 10-22-2015 |
| 20160086951 | CMOS NANOWIRE STRUCTURE - Complimentary metal-oxide-semiconductor nanowire structures are described. For example, a semiconductor structure includes a first semiconductor device. The first semiconductor device includes a first nanowire disposed above a substrate. The first nanowire has a mid-point a first distance above the substrate and includes a discrete channel region and source and drain regions on either side of the discrete channel region. A first gate electrode stack completely surrounds the discrete channel region of the first nanowire. The semiconductor structure also includes a second semiconductor device. The second semiconductor device includes a second nanowire disposed above the substrate. The second nanowire has a mid-point a second distance above the substrate and includes a discrete channel region and source and drain regions on either side of the discrete channel region. The first distance is different from the second distance. A second gate electrode stack completely surrounds the discrete channel region of the second nanowire. | 03-24-2016 |
| Patent application number | Description | Published |
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| 20090162596 | SILICONE COMPOSITIONS, METHODS OF MANUFACTURE, AND ARTICLES FORMED THEREFROM - A mat comprises a backing layer having a top surface and a bottom surface; a silicone grip disposed on, conformable, and in contact with the top surface of the backing layer to form a topside of the mat, wherein the silicone grip comprises: a cured silicone layer with a Shore A Durometer of less than or equal to about 60 and having an exterior surface and an opposite, interior surface; and wherein the silicone layer is formed from a curable silicone composition comprising a catalyst that promotes cure of the silicone composition, a higher molecular weight organopolysiloxane having at least two alkenyl groups per molecule, a lower molecular weight organopolysiloxane having at least two alkenyl groups per molecule, and an organopolysiloxane having at least two silicon-bonded hydrogen atoms per molecule. | 06-25-2009 |
| 20090162651 | SILICONE COMPOSITIONS, METHODS OF MANUFACTURE, AND ARTICLES FORMED THEREFROM - An article comprises a flexible support layer having an exterior surface and an interior surface; and a silicone grip disposed on, conformable, and in contact with the exterior surface of the flexible support layer, wherein the silicone grip comprises: a cured silicone layer with a Shore A Durometer of less than or equal to about 60 and having an exterior surface and an opposite, interior surface, wherein the silicone layer is formed from a curable silicone composition comprising a catalyst that promotes cure of the silicone composition, a higher molecular weight organopolysiloxane having at least two alkenyl groups per molecule, a lower molecular weight organopolysiloxane having at least two alkenyl groups per molecule, and an organopolysiloxane having at least two silicon-bonded hydrogen atoms per molecule. | 06-25-2009 |
| 20100183814 | SILICONE COMPOSITIONS, METHODS OF MANUFACTURE, AND ARTICLES FORMED THEREFROM - A method of manufacture of a silicone grip, comprising coating a solution of a silicone composition onto a substrate surface to form a silicone layer, wherein the solution comprises: a catalyst that promotes cure of the silicone composition, a higher molecular weight organopolysiloxane having at least two alkenyl groups per molecule, a lower molecular weight organopolysiloxane having at least two alkenyl groups per molecule, an organopolysiloxane having at least two silicon-bonded hydrogen atoms per molecule, and a solvent; and curing the silicone layer to form the silicone grip conformable with the substrate surface, wherein the cured silicone layer has a Shore A Durometer of less than or equal to about 60. | 07-22-2010 |
