Patent application number | Description | Published |
20080197768 | Light Emissive Device - An organic light emissive device, which comprises: an anode; a cathode; and an organic light emissive region between the anode and the cathode, which region comprises: a layer of blue light electroluminescent organic material which emits light having first CIE co-ordinates by exciton radiative decay; and a layer of longer wavelength electroluminescent organic material which intrinsically emits light having second CIE co-ordinates by exciton radiative decay; wherein the layers of blue light and longer wavelength materials are selected so that the organic light emissive region emits white light falling within a region having a CIE X coordinate equivalent to that emitted by a black body at 3000-9000K and CIE γ co-ordinate of said light emitted by a black body. | 08-21-2008 |
20090050206 | Method of Preparing OPTO-Electronic Device - A method is provided to produce an opto-electronic device comprising a substrate, a first electrode layer, a second electrode layer of opposite polarity to said first electrode layer, any interlayers and, between said first and second electrode layers, a first functional material in interfacial contact with a second functional material, wherein the first functional material has the structure of a laterally porous film and the second functional material is a film disposed over and interpenetrating with the film of the first functional material. | 02-26-2009 |
20090189515 | Laminated interconnects for organic opto-electronic device modules and methods - A method of producing an encapsulated module of interconnected opto-electronic devices which comprises: forming a patterned anode layer; forming a layer of opto-electronically active material over the patterned anode layer; forming a patterned cathode layer over the layer of opto-electronically active material, to provide a device array of opto-electronically active cells on the substrate; selectively removing portions of the layer of opto-electronically active material so as to expose minor portions of the anodes; forming a patterned interconnect layer on an encapsulating sheet in a pattern to define an array of interconnect pads; and laminating the patterned encapsulating sheet over the array of opto-electronically active cells whereby the exposed anode portions are interconnected with the cathodes of adjacent cells by the interconnect pads and the interconnected cells are encapsulated by the encapsulating sheet. | 07-30-2009 |
20090203876 | Pulsed Driven Displays - A pulsed driven display comprising an organic light-emitting device, said device comprising an organic layer comprising a semiconductive polymer, said polymer comprising a fluorene or triarylamine repeat unit, the fluorene or triarylamine repeat unit having a group R pendent from the polymer backbone, wherein R has general formula I:
| 08-13-2009 |
20100096978 | Light Emissive Device - A composition for use in an organic light emissive device, the composition comprising a fluorescent organic light emissive material and a phosphorescent organic light emissive material of the same colour. | 04-22-2010 |
20100308274 | Pulsed Driven Light Emissive Device and Composition Therefor - A pulsed-driven device, such as a display, comprises an organic light-emitting composition comprising a host material and a blended or bound phosphorescent emitter. The phosphorescent emitter is present in the host material at a concentration of greater than 10 wt. %, and the host material has a higher triplet energy level than the phosphorescent emitter. The concentration at which the phosphorescent emitter is at peak efficiency in the host material is greater than 10 wt. %, and the composition does not include a fluorescent emitter, so that emission from the composition in use is substantially all phosphorescence. | 12-09-2010 |
20100320454 | White Light Emitting Material - A white light emitting material comprising a polymer having an emitting polymer chain and at least one emitting end capping group. | 12-23-2010 |
20110168987 | Organic Electronic Device - An organic electronic device comprising: an anode; a hole injecting layer; a cathode; and organic semiconductive material disposed between the hole injecting layer and the cathode, wherein the cathode comprises an electron-injecting material having a higher electron-injection efficiency than BaO/Al, and wherein the hole injecting layer comprises a hole injecting material which has a lower workfunction than PEDOT:PSS (1:6). | 07-14-2011 |
20120062109 | Organic Electroluminescent Device and Method of Fabrication - An organic electroluminescent device comprises an anode; a cathode; a first electroluminescent layer between the anode and the cathode comprising an electron transporting material; and a second electroluminescent layer between the first electroluminescent layer and the anode. The second electroluminescent layer comprises a hole transporting material and an electroluminescent electron trapping material. The first electroluminescent layer may comprises a polymer having an electron transporting material and an electroluminescent material, and may include an optionally electroluminescent hole-transporting material. The electron transporting material and one or both of the hole transporting material of the first electroluminescent layer and the electroluminescent material of the first electroluminescent layer are part of the same molecule or polymer. Preferably, the electron transporting material comprises a plurality of adjacent arylene repeat units. | 03-15-2012 |
20130049578 | Organic Electroluminescent Device - An organic electroluminescent device having a plurality of pixels, the device comprising: an anode formed on a substrate; an organic electroluminescent layer formed on the anode in each well of a well-defining layer to form the plurality of pixels; a cathode layer on the electroluminescent layer and a layer of metal on the top surface of the well-defining layer; wherein a conductive layer is deposited over the cathode layer and the metal layer to electrically connect the cathode layer on the electroluminescent layer with the metal layer on the top surface of the well-defining layer. | 02-28-2013 |
20130171770 | METHOD OF PREPARING OPTO-ELECTRONIC DEVICE - A method is provided to produce an opto-electronic device comprising a substrate, a first electrode layer, a second electrode layer of opposite polarity to said first electrode layer, any interlayers and, between said first and second electrode layers, a first functional material in interfacial contact with a second functional material, wherein the first functional material has the structure of a laterally porous film and the second functional material is a film disposed over and interpenetrating with the film of the first functional material. | 07-04-2013 |
20130237680 | WHITE LIGHT EMITTING MATERIAL - A white light emitting material comprising a polymer having an emitting polymer chain and at least one emitting end capping group. | 09-12-2013 |
20130284984 | SEMICONDUCTOR BLEND - The invention provides an ink comprising a blend of a polymer material and a small molecule semiconductor material dissolved or dispersed in a solvent, said blend comprising at least 70% by weight of said polymer material and wherein the ink concentration is at least 0.4% w/v. The polymer material is preferably TFB [9,9′-dioctylfluorene-co-N-(4-butylphenyl)-diphenylamine] | 10-31-2013 |
20140077189 | ORGANIC LIGHT EMITTING DEVICE AND METHOD - An organic light-emitting device comprises an anode; a hole injection layer in contact with the anode; a light-emitting layer over the hole injection layer; and a cathode over the light-emitting layer, wherein the hole injection layer comprises an organic semiconductor material doped with a partially fluorinated fullerene such as C | 03-20-2014 |
20140346486 | LIGHT EMITTING COMPOSITION AND DEVICE - A light-emitting composition comprises a polymer and a phosphorescent light-emitting material. The polymer comprises conjugating repeat units of formula (I) and up to 20 mol % of conjugation-blocking repeat units of repeat units of formula (II): | 11-27-2014 |
Patent application number | Description | Published |
20120319780 | WIDEBAND DOHERTY AMPLIFIER CIRCUIT HAVING A CONSTANT IMPEDANCE COMBINER - A three way wideband Doherty amplifier circuit includes a first peaking amplifier operable to turn on at a first power level, a second peaking amplifier operable to turn on at a second power level below the first power level and a main power amplifier operable to turn on at all power levels. The main power amplifier has a high impedance load modulated state when the first and second peaking amplifiers are turned off. The three way wideband Doherty amplifier circuit further includes a constant impedance combiner connected to an output of each amplifier. The constant impedance combiner has a characteristic impedance which matches the impedance of the main amplifier in the high impedance load modulated state with or without an output matching device connecting the main amplifier output to the constant impedance combiner, as viewed from the output of the main amplifier. | 12-20-2012 |
20130009708 | WIDEBAND DOHERTY AMPLIFIER CIRCUIT WITH IMPEDANCE COMBINER - An amplifier circuit includes a first amplifier operable to turn on at a first power level, a second amplifier operable to turn on at a second power level below the first power level and a third amplifier operable to turn on at all power levels. A first power combiner is operable to combine an output of the third amplifier with an output of the second amplifier at a first power combining node to form a first combined amplifier output. A second power combiner is operable to combine the first combined amplifier output with an output of the first amplifier at a second power combining node to form a second combined amplifier output. An impedance transformer is operable to transform a load impedance of the amplifier circuit to a transformed impedance at the second power combining node, the transformed impedance matching an impedance of the first and second power combiners. | 01-10-2013 |
20130076446 | RF DEVICE WITH COMPENSATORY RESONATOR MATCHING TOPOLOGY - An amplifier circuit includes an RF transistor, a parallel resonator and a series resonator. The RF transistor has an input, an output and an intrinsic output capacitance. The parallel resonator is connected to the output of the RF transistor and includes a first inductive component connected in parallel with the intrinsic output capacitance of the RF transistor. The series resonator connects the output of the RF transistor to an output terminal and includes a second inductive component connected in series with a capacitive component. The series resonator is operable to compensate for a change in impedance of the parallel resonator over frequency. | 03-28-2013 |
20130241639 | IMPEDANCE SPREADING WIDEBAND DOHERTY AMPLIFIER CIRCUIT WITH PEAKING IMPEDANCE ABSORPTION - A wideband Doherty amplifier circuit includes a main amplifier configured to operate in a linear mode, a peaking amplifier configured to operate in a non-linear mode and a Doherty combiner directly connected to an output of each amplifier so that no output match devices are in the path between the amplifier outputs and the Doherty combiner. The Doherty combiner is configured to present the same load impedance to each amplifier when both amplifiers are conducting and present a modulated load impedance to the main amplifier when the peaking amplifier is non-conducting so that a variation in the VSWR seen by the main amplifier is less than 5% over a plurality of frequency bands and/or so that the peaking amplifier has an off-state impedance spreading of 20 degrees or less over the plurality of frequency bands. | 09-19-2013 |
20140118070 | Doherty Amplifier Circuit with Phase-Controlled Load Modulation - A symmetric Doherty amplifier includes a main amplifier and a peaking amplifier of the same size as the main amplifier. The symmetric Doherty amplifier is configured to operate at peak output power when the main amplifier and the peaking amplifier are each in saturation, and at output-back-off (OBO) when the main amplifier is in saturation and the peaking amplifier is not in saturation. Phase shift circuitry is configured to shift the phase at an output of the peaking amplifier at OBO so that a load impedance seen by the main amplifier and efficiency of the symmetric Doherty amplifier both increase at OBO as a function of the phase shift at the peaking amplifier output. | 05-01-2014 |