Patent application number | Description | Published |
20090017309 | COMPOSITIONS AND METHODS FOR CREATING ELECTRONIC CIRCUITRY - The present invention is directed to non-lithographic patterning by laser (or similar-type energy beam) ablation, where the ablation system ultimately results in circuitry features that are relative free from debris induced over-plating defects (debris relating to the ablation process) and fully additive plating induced over-plating defects. Compositions of the invention include a circuit board precursor having an insulating substrate and a cover layer. The insulating substrate is made from a dielectric material and also a metal oxide activatable filler. The cover layer can be sacrificial or non-sacrificial and is used to remediate unwanted debris arising from the ablation process. | 01-15-2009 |
20120326560 | WAFER LEVEL FABRICATION OF CAVITY FOR SURFACE ACOUSTIC WAVE FILTER - This invention utilizes atomic layer deposition (ALD) to deposit a layer of a material (e.g., aluminum oxide) as a passivation and adhesion enhancement layer on a piezoelectric layer and an interdigitated transducer(s) (IDT(s)) of a surface acoustic wave (SAW) filter and also utilizes a photosensitive polymer layer (e.g., epoxy dry film) for photodefining a cavity for SAW filter fabrication. The ALD layer serves to protect the IDTs from possible corrosion caused by either the polymer layer and/or moisture and at same time provide for stable operation of the SAW filter without a signal shift occurring by protection of the piezoelectric layer. The cavity, having walls formed by the photosensitive polymer, provides for a SAW fabrication process that is simple and cost effective. | 12-27-2012 |
20130104958 | INTEGRATED BACK-SHEET FOR BACK CONTACT PHOTOVOLTAIC MODULE | 05-02-2013 |
20130193452 | LIGHT EMITTING DIODE SYSTEM AND METHODS RELATING THERETO - A light emitting diode system is disclosed having a bent layered structure conformed to a least a portion of a self-supporting three dimensional heat sink and maintains a breakdown voltage from 150 to 350 V/micron. The bent layered structure has an electrical circuit, a dielectric layer and at least one LED package, LED chip on board or mixtures thereof attached to the electrical circuit. The dielectric layer is a polyimide derived from at least 70 mole percent aromatic dianhydride based upon total dianhydride content of the polyimide and at least 70 mole percent aromatic diamine based upon total diamine content of the polyimide. | 08-01-2013 |
20130194814 | BENT LAYERED STRUCTURE AND METHODS RELATING THERETO - A bent layered structure is disclosed having a top conductive layer and a dielectric layer. The dielectric layer is a polyimide derived from at least 70 mole percent aromatic dianhydride based upon total dianhydride content of the polyimide and at least 70 mole percent aromatic diamine based upon total diamine content of the polyimide. The bent layered structure has a radius of at least 2 mm and a bend angle of at least 45 degrees at least once along a longitudinal or at least once parallel to the longitudinal axis or both and maintains a 150 to 350 V/micron breakdown voltage. | 08-01-2013 |
20150342042 | CIRCUIT BOARD - The present disclosure is directed to a circuit board having a first electrically insulating layer, a first imaged metal layer and a first polyimide coverlay derived from 100 mole % 3,3′,4,4′-biphenyl tetracarboxylic dianhydride, 20 to 90 mole % 2,2′-bis(trifluoromethyl)benzidine, and 10 to 80 mole % 4,4′-oxydianiline. The circuit board does not have an adhesive layer between the first imaged metal layer and the polyimide coverlay. | 11-26-2015 |
20150342043 | CIRCUIT BOARD - The present disclosure is directed to a circuit board having a first electrically insulating layer, a first imaged metal layer and a first polyimide coverlay comprising a polyimide derived from 80 to 90 mole % 3,3′,4,4′-biphenyl tetracarboxylic dianhydride, 10 to 20 mole % 4,4′-oxydiphthalic anhydride and 100 mole % 2,2′-bis(trifluoromethyl) benzidine. An adhesive layer is not present between the first imaged metal layer and the first polyimide coverlay. | 11-26-2015 |
20150342044 | CIRCUIT BOARD - The present disclosure is directed to a circuit board having a first polyimide coverlay and a second polyimide coverlay derived from 80 to 90 mole % 3,3′,4,4′-biphenyl tetracarboxylic dianhydride, 10 to 20 mole % 4,4′-oxydiphthalic anhydride and 100 mole % 2,2′-bis(trifluoromethyl) benzidine or 100 mole % 3,3′,4,4′-biphenyl tetracarboxylic dianhydride, 20 to 90 mole % 2,2′-bis(trifluoromethyl) benzidine, and 10 to 80 mole % 4,4′-oxydianiline, a first imaged metal layer, a first electrically insulating layer, a second imaged metal layer, a polyimide bondply having a polyimide derived from 80 to 90 mole % 3,3′,4,4′-biphenyl tetracarboxylic dianhydride, 10 to 20 mole 4,4′-oxydiphthalic anhydride and 100 mole % 2,2′-bis(trifluoromethyl) benzidine, a third imaged metal layer, a second electrically insulating layer, a fourth imaged metal layer. | 11-26-2015 |