Patent application number | Description | Published |
20120211842 | Semiconductor Body Having a Terminal Cell - A semiconductor body comprising a first connection for feeding an upper supply potential and a first and a second terminal cell, which are situated at a distance from each other. The semiconductor body further comprises an arrester structure, which is arranged between the first and second terminal cells in a p-doped substrate. The arrester structure comprises a first and a second p-channel field-effect transistor structure, each of which is set in a respective n-doped well substantially parallel to the first and second terminal cells, and a diode structure with a p-doped region set in a further n-doped well between the n-doped wells of the first and second p-channel field-effect transistor structures. The diode structure is designed to activate the first and second p-channel field-effect transistor structure as arrester elements during an electrostatic discharge in the semiconductor body. | 08-23-2012 |
20130113036 | Transistor Assembly as an ESD Protection Measure | 05-09-2013 |
20130307020 | THYRISTOR COMPONENT - The invention relates to a thyristor component, wherein a p-conductive trough ( | 11-21-2013 |
20140240877 | CIRCUIT ARRANGEMENT FOR PROTECTING AGAINST ELECTROSTATIC DISCHARGES - A circuit arrangement for protecting against electrostatic discharges comprises a diverter (ECL) that is suitable for diverting an electrostatic discharge between a first terminal (IO) and a second terminal (VDD, VSS), as well as a compensation device ( | 08-28-2014 |
20150028421 | ESD PROTECTION SEMICONDUCTOR DEVICE - A semiconductor substrate ( | 01-29-2015 |