Patent application number | Description | Published |
20140173020 | AUTOMATIC SCHEDULING OF CONTENT DELIVERY - A content delivery system coupled to a computer network can provide large volumes of content to large numbers of recipients. The content is collected into digests and individual articles to be sent in email via an email channel established by the content delivery system to the recipients through the computer network. Content producers submit content for aggregation into various email deliveries and submit initial scheduling information. The scheduling information may specify target characteristics of preferred recipients of the content as well as general and initial scheduling preferences for email delivery. The content delivery system utilizes the initial scheduling information as a starting point for scheduling email deliveries. The system measures levels of content interaction by the recipients to gauge corresponding interest levels in the content. Using recipient interest levels as feedback, the content delivery system is able to modify and extend scheduling details to optimally schedule further deliveries of content. | 06-19-2014 |
20160036750 | PRODUCT ONBOARDING VIA MESSAGES - Techniques for onboarding users to various product features are described. According to various embodiments, information identifying a set of candidate onboarding content items associated with an email type of an email to be transmitted to a particular member of an online social network service is accessed. Thereafter, a first subset of the candidate onboarding content items is removed from the set, responsive to determining that the particular member has already been onboarded to products associated with the candidate onboarding content items in the first subset. Further, a second subset of the candidate onboarding content items is removed from the set, responsive to determining that the particular member has previously viewed and not interacted with the candidate onboard* content items in the second subset. A specific onboarding content item is then dynamically selected from the remaining set of candidate onboarding content items. | 02-04-2016 |
20160127304 | AUTOMATIC SCHEDULING OF CONTENT DELIVERY - A content delivery system coupled to a computer network can provide large volumes of content to large numbers of recipients. The content is collected into digests and individual articles to be sent in email via an email channel established by the content delivery system to the recipients through the computer network. Content producers submit content for aggregation into various email deliveries and submit initial scheduling information. The scheduling information may specify target characteristics of preferred recipients of the content as well as general and initial scheduling preferences for email delivery. The content delivery system utilizes the initial scheduling information as a starting point for scheduling email deliveries. The system measures levels of content interaction by the recipients to gauge corresponding interest levels in the content. Using recipient interest levels as feedback, the content delivery system is able to modify and extend scheduling details to optimally schedule further deliveries of content. | 05-05-2016 |
Patent application number | Description | Published |
20090109842 | Device Manager Having Authoritative Process Relations For Conforming State Data Upon Failover - A device has first and second instances of a computer-executable manager. When a failure is detected in the first instance while it is active, the second instance is activated. During activation of the second instance, a conforming first process of the second instance conforms its state data to an authoritative second process of the second instance. | 04-30-2009 |
20090113255 | Software Fault Detection Using Progress Tracker - The invention provides for software fault detection. A software process tracks its own progress. In the event the timer times out, a handler checks the progress. If the progress meets a fault criterion, a fault response is executed. | 04-30-2009 |
20090252173 | Method For Improving Efficiency Of Redundancy Protocols - A method for improving efficiency of redundancy protocols used in a network is provided. The network comprises a first router running a program instance of a router redundancy protocol in a master state at a first interface and a dynamic protocol at a second interface, and a second router running another program instance of the router redundancy protocol in a backup state at a first interface and the dynamic protocol at a second interface. The program instance at the second router takes over the roles of the program instance at the first router during a failure of the first router. The method comprises establishing an online status of the first router, initiating a routing convergence process by the dynamic protocol at the first router, and taking over the roles from the program instance at the second router by the program instance at the first router when the routing convergence process has ended. | 10-08-2009 |
20090296697 | Method for verifying shared state synchronization of redundant modules in a high availability network switch - Embodiments of the invention disclose a method of determining the existence of state synchronization between two redundant processing modules operating in a network switch that operates in a manner wherein ordinary network traffic stimuli are autonomously processed through interface and fabric modules, and extraordinary network stimuli are processed from the interface modules to the redundant processing modules, wherein one of the modules is operating actively in the switch and the other is operating in a standby condition whereby state latency exists between the two modules, comprising stopping processing of the extraordinary stimuli to the actively operating processing module, completing processing of stimuli previously received by the actively operating processing module, completing processing of stimuli previously received by the processing module operating in a standby condition, reading the state information of each of the two processing modules, and comparing the state information of said two processing modules to determine if their state information is synchronized, and resuming processing extraordinary stimuli by the actively operating processing module. | 12-03-2009 |
20100146326 | SYSTEMS AND METHODS FOR MANAGING NETWORK COMMUNICATIONS - First and second management systems are placed in active and standby modes, respectively. The first and second management systems are configured to be in communication with the second and the first management systems, respectively and with a plurality of network devices. A first number of the plurality of network devices in communication with the first management system is determined at the first management system and transmitted to the second management system. A second number of the plurality of network devices in communication with the second management system is determined at the second management system and transmitted to the first management system. A first determination is made regarding whether the first number of network devices is less than the second number of network devices at the first management system. A second determination is made regarding whether the first number of network devices is less than the second number of network devices at the second management system. The first and second management systems are placed in failure mode and active mode, respectively based on the first and second determinations. | 06-10-2010 |
20130326528 | RESOURCE STARVATION MANAGEMENT IN A COMPUTER SYSTEM - Provided is a method of managing resource starvation in a computer system. A highest priority task is created in a computer system. The highest priority task identifies a resource starvation causing task in the computer system and reduces current priority of the starvation causing task. | 12-05-2013 |
Patent application number | Description | Published |
20160137652 | IMMUNOREGULATORY AGENTS - Compounds that modulate the oxidoreductase enzyme indoleamine 2,3-dioxygenase, and compositions containing the compounds, are described herein. The use of such compounds and compositions for the treatment and/or prevention of a diverse array of diseases, disorders and conditions, including cancer- and immune-related disorders, that are mediated by indoleamine 2,3-dioxygenase is also provided. | 05-19-2016 |
20160137653 | IMMUNOREGULATORY AGENTS - Compounds that modulate the oxidoreductase enzyme indoleamine 2,3-dioxygenase, and compositions containing the compounds, are described herein. The use of such compounds and compositions for the treatment and/or prevention of a diverse array of diseases, disorders and conditions, including cancer- and immune-related disorders, that are mediated by indoleamine 2,3-dioxygenase is also provided. | 05-19-2016 |
Patent application number | Description | Published |
20110291243 | PLANARIZING ETCH HARDMASK TO INCREASE PATTERN DENSITY AND ASPECT RATIO - Methods for manufacturing a semiconductor device in a processing chamber are provided. In one embodiment, a method includes depositing over a substrate a first base material having a first set of interconnect features, filling an upper portion of the first set of interconnect features with an ashable material to an extent capable of protecting the first set of interconnect features from subsequent processes while being easily removable when desired, planarizing an upper surface of the first base material such that an upper surface of the ashable material filled in the first set of interconnect features is at the same level with the upper surface of the first base material, providing a substantial planar outer surface of the first base material, depositing a first film stack comprising a second base material on the substantial planar outer surface of the first base material, forming a second set of interconnect features in the second base material, wherein the second set of interconnect features are aligned with the first set of interconnect features, and removing the ashable material from the first base material, thereby extending a feature depth of the semiconductor device by connecting the second set of interconnect features to the first set of interconnect features. In another embodiment, a method includes providing a base material having a first film stack deposited thereon, wherein the base material is formed over the substrate and having a first set of interconnect features filled with an amorphous carbon material, the first film stack comprising a first amorphous carbon layer deposited on a surface of the base material, a first anti-reflective coating layer deposited on the first amorphous carbon layer, and a first photoresist layer deposited on the first anti-reflective coating layer, and patterning a portion of the first photoresist layer by shifting laterally a projection of a mask on the first photoresist layer relative to the substrate a desired distance, thereby introducing into the first photoresist layer a first feature pattern to be transferred to the underlying base material, wherein the first feature pattern is not aligned with the first set of interconnect features. | 12-01-2011 |
Patent application number | Description | Published |
20110151142 | PECVD MULTI-STEP PROCESSING WITH CONTINUOUS PLASMA - Embodiments of the present invention provide methods for reducing defects during multi-layer deposition. In one embodiment, the method includes exposing the substrate to a first gas mixture and an inert gas in the presence of a plasma to deposit a first material layer on the substrate, terminating the first gas mixture when a desired thickness of the first material is achieved while still maintaining the plasma and flowing the inert gas, and exposing the substrate to the inert gas and a second gas mixture that are compatible with the first gas mixture in the presence of the plasma to deposit a second material layer over the first material layer in the same processing chamber, wherein the first material layer and the second material layer are different from each other. | 06-23-2011 |
20110294303 | CONFINED PROCESS VOLUME PECVD CHAMBER - An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom. | 12-01-2011 |
20130161629 | ZERO SHRINKAGE SMOOTH INTERFACE OXY-NITRIDE AND OXY-AMORPHOUS-SILICON STACKS FOR 3D MEMORY VERTICAL GATE APPLICATION - Methods are provided for depositing a stack of film layers for use in vertical gates for 3D memory devices, by depositing a sacrificial nitride film layer at a sacrificial film deposition temperature greater than about 550° C.; depositing an oxide film layer over the nitride film layer, at an oxide deposition temperature of about 600° C. or greater; repeating the above steps to deposit a film stack having alternating layers of the sacrificial films and the oxide films; forming a plurality of holes in the film stack; and depositing polysilicon in the plurality of holes in the film stack at a polysilicon process temperature of about 700° C. or greater, wherein the sacrificial film layers and the oxide film layers experience near zero shrinkage during the polysilicon deposition. Flash drive memory devices may also be made by these methods. | 06-27-2013 |
20130302996 | DEPOSITION OF AN AMORPHOUS CARBON LAYER WITH HIGH FILM DENSITY AND HIGH ETCH SELECTIVITY - Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system, generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200° C. and about 700° C. to form a low-hydrogen content amorphous carbon layer on the substrate, transferring the substrate into a curing chamber located within the processing system without breaking vacuum, and exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200° C. | 11-14-2013 |
20140118751 | PECVD PROCESS - A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants. | 05-01-2014 |
20150118862 | TREATMENT FOR FLOWABLE DIELECTRIC DEPOSITION ON SUBSTRATE SURFACES - Provided herein are methods and apparatus for improved flowable dielectric deposition on substrate surfaces. The methods involve improving nucleation and wetting on the substrate surface without forming a thick high wet etch rate interface layer. According to various embodiments, the methods may include single or multi-stage remote plasma treatments of a deposition surface. In some embodiments, a treatment may include exposure to both a reducing chemistry and a hydrogen-containing oxidizing chemistry. Apparatus for performing the methods are also provided. | 04-30-2015 |
20150226540 | PECVD APPARATUS AND PROCESS - Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants. | 08-13-2015 |
20160005596 | ULTRA-CONFORMAL CARBON FILM DEPOSITION LAYER-BY-LAYER DEPOSITION OF CARBON-DOPED OXIDE FILMS - Embodiments of the invention relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer with a predetermined thickness over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, wherein a volumetric flow rate of hydrocarbon source: plasma-initiating gas: dilution gas is in a ratio of 1:0.5:20, generating a plasma at a deposition temperature of about 300 C to about 500 C to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate, and removing the patterned features. | 01-07-2016 |