Patent application number | Description | Published |
20080232630 | Condenser microphone package - A condenser microphone package includes: a condenser microphone unit including a diaphragm and a back plate; a printed circuit board; a conductive connector sandwiched between and cooperating with the condenser microphone unit and the printed circuit board to form a stack; and a metal can encasing the stack and having a first end wall that is formed with a plurality of sound holes, and that abuts against the condenser microphone unit, and a second end wall that is disposed opposite to the first end wall, that abuts against the printed circuit board, and that cooperates with the first end wall to press the printed circuit board toward the condenser microphone unit. | 09-25-2008 |
20090078952 | LIGHT-EMITTING CHIP DEVICE WITH HIGH THERMAL CONDUCTIVITY - This invention provides a light-emitting chip device with high thermal conductivity, which includes an epitaxial chip, an electrode disposed on a top surface of the epitaxial chip and a U-shaped electrode base cooperating with the electrode to provide electric energy to the epitaxial chip for generating light by electric-optical effect. The epitaxial chip includes a substrate and an epitaxial-layer structure with a roughening top surface and a roughening bottom surface for improving light extracted out of the epitaxial chip. A thermal conductive transparent reflective layer is formed between the substrate and the epitaxial-layer structure. The electrode base surrounds the substrate, the transparent reflective layer and a first cladding layer of the epitaxial-layer structure to facilitate the dissipation of the internal waste heat generated when the epitaxial chip emitting light. A method for manufacturing the chip device of the present invention is provided. | 03-26-2009 |
20090245544 | Acoustoeletric transformation chip for ribbon microphone - An acoustoelectric transformation chip for a ribbon microphone includes a diaphragm that has a vibrating region and two fixing regions disposed on two opposite sides of the vibrating region, and a voice coil film formed on the diaphragm. The voice coil film includes two rectangular voice coils, each of which has a plurality of first and second connection segments parallel to a direction of a magnetic field. A plurality of first and second transverse segments are perpendicular to the first and second connection segments and are connected between the first and second connection segments. The second transverse segments of each voice coil are disposed on one of the fixing regions. The first transverse segments of the two voice coils are disposed in the vibrating region. | 10-01-2009 |
20100136728 | LIGHT-EMITTING DIODE CHIP WITH HIGH LIGHT EXTRACTION AND METHOD FOR MANUFACTURING THE SAME - This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided. | 06-03-2010 |
20100163839 | SEMICONDUCTOR SUBSTRATE FOR GROWTH OF AN EPITAXIAL SEMICONDUCTOR DEVICE - A semiconductor substrate includes: a base layer; a sacrificial layer that is formed on a base layer and that includes a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of the sacrificial film regions. Each sacrificial film region has a plurality of nanostructures and a plurality of second passages defined among the nanostructures. The second passages communicate spatially with the first passages and have a width less than that of the first passages. An epitaxial layer is disposed on the sacrificial layer. | 07-01-2010 |
20100181576 | Epitaxial Structure Having Low Defect Density - An epitaxial structure having a low defect density includes: a base layer; a first epitaxial layer having a plurality of concentrated defect groups, and an epitaxial surface that has a plurality of first recesses corresponding in position to the concentrated defect groups, the sizes of the first recesses being close to each other; and a plurality of defect-termination blocks respectively and filling the first recesses and having polished surfaces. The defect-termination blocks are made of a material which is different in removal rate from that of the first epitaxial layer. The polished surfaces are substantially flush with the epitaxial surface so that the first epitaxial layer has a substantially planarized crystal growth surface | 07-22-2010 |
20100184279 | Method of Making an Epitaxial Structure Having Low Defect Density - A method of making an epitaxial structure includes: (a) forming laterally a first epitaxial layer on a base layer, the first epitaxial layer having an epitaxial surface; (b) etching the first epitaxial layer using a wet etching agent so that the epitaxial surface has a plurality of first recesses; (c) depositing on the first epitaxial layer a defect-termination layer; and (d) removing the defect-termination layer by a chemical mechanical polishing process, thereby forming a plurality of defect-termination blocks that respectively and fill the first recesses, wherein the defect-termination blocks have polished surfaces that are substantially flush with the epitaxial surface. | 07-22-2010 |
20110024783 | LIGHT EMITTING DIODE - A light emitting diode includes: an electrically conductive permanent substrate having a reflective top surface; an epitaxial film disposed on the reflective top surface of the permanent substrate and having an upper surface and a roughened lower surface that is opposite to the upper surface, the roughened lower surface having a roughness with a height of not less than 300 nm and a plurality of peaks which are in ohmic contact with the reflective top surface; an optical adhesive filled in a gap between the lower surface and the reflective top surface and connecting the epitaxial film to the permanent substrate; and a top electrode disposed on the upper surface and in ohmic contact with the epitaxial film. | 02-03-2011 |
20110037090 | LIGHT EMITTING DIODE - A light emitting diode includes an epitaxial layer, an electroder electrically conductive members, a light incident layer, a light reflecting layer, an adhesive, and an electrically conductive permanent substrate. The epitaxial layer has first and second surfaces. The electrode is disposed on the second surface of the epitaxial layer. The electrically conductive members are formed on the first surface of the epitaxial layer and are spaced apart from each other. The light incident layer is formed on the first surface of the epitaxial layer at regions where none of the electrically conductive members are formed. The light reflecting layer is formed on the light incident layer and the electrically conductive members, and has indented parts and non-indented parts. The adhesive is disposed in the indented parts of the light reflecting layer. The permanent substrate is bonded to the light reflecting layer through the adhesive and through wafer bonding. | 02-17-2011 |
20110092005 | LIGHT-EMITTING-DIODE ARRAY AND METHOD FOR MANUFACTURING THE SAME - A method for forming a light-emitting-diode (LED) array is disclosed which comprises forming a LED structure on a substrate, dividing the LED structure into at least a first and a second LED device with a gap, depositing at least one polymer material over the LED structure substantially filling the gap, removing portions of the at least one polymer material to expose a first electrode of the first LED device and a second electrode of the second LED device, and forming an interconnect on top of the at least one polymer material electrically connecting the first and second electrode. | 04-21-2011 |
20110108862 | LIGHT-EMITTING-DIODE ARRAY AND METHOD FOR MANUFACTURING THE SAME - A light-emitting-diode (LED) array is disclosed which comprises a first LED device having a first electrode, a second LED device having a second electrode, wherein the first and the second LED device are formed on the same substrate and separated by a gap, at least one polymer material substantially filling the gap, and an interconnect, formed on top of the at least one polymer material, electrically connecting the first and the second electrode. | 05-12-2011 |
20110227213 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICES AND A SEMICONDUCTOR DEVICE MADE THEREFROM - A method for fabricating semiconductor devices includes: (a) forming over a temporary substrate a sacrificial film layer; (b) growing laterally and epitaxially an epitaxial film layer; (c) forming over the epitaxial film layer a patterned mask that covers partially the epitaxial film layer and that defines a plurality of through holes to expose a plurality of epitaxial surface regions, respectively; (d) forming a plurality of conductive members respectively in the through holes and on the epitaxial surface regions; (e) removing the patterned mask and removing a part of the epitaxial film layer and a part of the sacrificial film layer beneath the patterned mask; (f) removing the sacrificial film layer; and (g) removing the temporary substrate. | 09-22-2011 |
20120001202 | Semiconductor Light Emitting Device and Method for Manufacturing the Same - A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the first surface of the light emitting unit; and (g) removing a portion of the light emitting unit from the first surface, to expose at least one of the n-electrode and the p-electrode. | 01-05-2012 |
20120056228 | LED CHIP MODULES, METHOD FOR PACKAGING THE LED CHIP MODULES, AND MOVING FIXTURE THEREOF - A method for packaging LED chip modules is provided. First, a first sacrificial layer is disposed on a substrate. Afterwards, LED chips are synchronously disposed on the first sacrificial layer before the first sacrificial layer cures. Next, a first material, a second sacrificial layer, and a second material are used to form a support layer on the first sacrificial layer. The first sacrificial layer and the second sacrificial layer are then removed, so that LED chip modules are obtained, wherein each LED chip module has a corresponding support layer. Furthermore, a moving fixture is provided to synchronously remove chips from a wafer and dispose them on the sacrificial layer. | 03-08-2012 |
20120058579 | METHOD FOR PACKAGING LED CHIP MODULES AND MOVING FIXTURE THEREOF - A method for packaging LED chip modules is provided. First, a first sacrificial layer is disposed on a substrate. Afterwards, LED chips are synchronously disposed on the first sacrificial layer before the first sacrificial layer cures. Next, a first material, a second sacrificial layer, and a second material are used to form a support layer on the first sacrificial layer. The first sacrificial layer and the second sacrificial layer are then removed, so that LED chip modules are obtained, wherein each LED chip module has a corresponding support layer. Furthermore, a moving fixture is provided to synchronously remove chips from a wafer and dispose them on the sacrificial layer. | 03-08-2012 |
20120074453 | PATTERNED SUBSTRATE AND LIGHT-EMITTING DIODE HAVING THE SAME - A patterned substrate for epitaxially forming a light-emitting diode includes: a top surface; a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and each of which is defined by a recess-defining wall, the recess-defining wall having a bottom wall face, and a surrounding wall face that extends from the bottom wall face to the top surface; and a plurality of protrusions, each of which protrudes upwardly from the bottom wall face of the recess-defining wall of a respective one of the recesses. A light-emitting diode having the patterned substrate is also disclosed. | 03-29-2012 |
20120077334 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICES - A method for fabricating semiconductor devices includes: (a) forming a layered structure that includes a temporary substrate, a plurality of spaced apart sacrificial film regions on the temporary substrate, and a plurality of valley-and-peak areas among the sacrificial film regions; (b) growing laterally and epitaxially an epitaxial film layer over the sacrificial film regions and the valley-and-peak areas, wherein gaps are formed among the epitaxial film layer and the valley-and-peak areas; (c) forming a conductive layer to contact the epitaxial film layer; (d) forming a plurality of grooves to divide the epitaxial film layer and the conductive layer into a plurality of epitaxial structures on the temporary substrate; and (e) removing the temporary substrate and the sacrificial film regions from the epitaxial structures by etching the sacrificial film regions through the gaps and the grooves. | 03-29-2012 |
20120107962 | METHOD OF FABRICATING EPITAXIAL SEMICONDUCTOR DEVICES - A method of fabricating epitaxial semiconductor devices includes: (a) forming an etch limiting film that includes a sacrificial layer on an epitaxial substrate; (b) growing epitaxially layers of a semiconductor structure on the sacrificial layer; (c) forming on the semiconductor structure a layer of a device substrate that can be magnetized, and a patterned passage unit that extends from the device substrate to a depth as deep as the sacrificial layer such that a plurality of semiconductor units are defined in the semiconductor structure and the device substrate; and (d) separating the semiconductor units from the epitaxial substrate by etching laterally the sacrificial layer through the patterned passage unit while a magnetic attraction force is applied to the device substrate. | 05-03-2012 |
20120128939 | PATTERNED SUBSTRATE FOR EPITAXIALLY GROWING SEMICONDUCTOR MATERIAL, AND METHOD FOR PATTERNING A SUBSTRATE - A patterned substrate for epitaxially growing a semiconductor material includes: a top surface; and a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and is defined by n crystal planes, n being an integer not less than 3. Each of the crystal planes has an upper edge meeting the top surface and is adapted for epitaxially growing the semiconductor material. A maximum distance from one of the upper edges of one of the recesses to an adjacent one of the upper edges of an adjacent one of the recesses is not greater than 500 nm. | 05-24-2012 |
20120168914 | EPITAXIAL STRUCTURE AND METHOD FOR MAKING THE SAME - A method for making an epitaxial structure includes: (a) providing a sacrificial layer on a temporary substrate, the sacrificial layer being made of gallium oxide; and (b) growing epitaxially an epitaxial layer unit over the sacrificial layer. | 07-05-2012 |
20120193652 | LED ARRAY FORMED BY INTERCONNECTED AND SURROUNDED LED CHIPS - A light emitting diode array includes a first light emitting diode having a first electrode and a second light emitting diode having a second electrode. The first and second light emitting diodes are separated. A first polymer layer is positioned between the light emitting diodes. An interconnect located at least partially on the first polymer layer connects the first electrode to the second electrode. A permanent substrate is coupled to the light emitting diodes. The permanent substrate is coupled to the side of the light emitting diodes with the interconnect. A second polymer layer at least partially encapsulates the side of the light emitting diodes opposite the permanent substrate (the side opposite the interconnect). | 08-02-2012 |
20120193653 | LED ARRAY FORMED BY INTERCONNECTED AND SURROUNDED LED CHIPS - A light emitting diode array includes a first light emitting diode having a first electrode and a second light emitting diode having a second electrode. The first and second light emitting diodes are separated. A first polymer layer is positioned between the light emitting diodes. An interconnect located at least partially on the first polymer layer connects the first electrode to the second electrode. A permanent substrate is coupled to the light emitting diodes. The permanent substrate is coupled to the side of the light emitting diodes opposite the interconnect. A second polymer layer at least partially encapsulates the side of the light emitting diodes with the interconnect. | 08-02-2012 |
20120211783 | LIGHT-EMITTING-DIODE ARRAY WITH MICROSTRUCTURES IN GAP BETWEEN LIGHT-EMITTING-DIODES - A light-emitting-diode (LED) array includes a first LED device having a first electrode and a second LED device having a second electrode. The first LED device and the second LED device are positioned on a common substrate. At least one polymer material is between the first LED device and the second LED device. A plurality of microsctructures are in the at least one polymer material. An interconnect is formed on top of the at least one polymer material to electrically connect the first electrode and the second electrode. | 08-23-2012 |
20120228651 | LIGHT-EMITTING-DIODE ARRAY - A light-emitting-diode (LED) array includes a first LED unit having a first electrode and a second LED unit having a second electrode. The first LED unit and the second LED unit are positioned on a common substrate and are separated by a gap. Two or more polymer materials form a multi-layered structure in the gap. A first polymer material substantially fills a lower portion of the gap and at least one additional polymer material substantially fills a remainder of the gap above the first polymer material. A kinematic viscosity of the first polymer material is less than a kinematic viscosity of the at least one additional polymer material. An interconnect, positioned on top of the at least one additional polymer material, electrically connects the first electrode and the second electrode. | 09-13-2012 |
20130020597 | POSTS IN GLUE LAYER FOR GROUP-III NITRIDE LEDS - A semiconductor light emitting device and a method for making the semiconductor light emitting device are described. The semiconductor light emitting device includes an epitaxial structure having a first type doped layer, a light emitting layer, and a second type doped layer. The epitaxial structure may further include an undoped layer. A substrate is bonded to at least one surface of the epitaxial structure with an adhesive layer. One or more posts are located in the adhesive layer. The posts may have different widths depending on the location of the posts and/or the posts may only be located under certain portions of the epitaxial structure. | 01-24-2013 |
20130023073 | USING NON-ISOLATED EPITAXIAL STRUCTURES IN GLUE BONDING FOR MULTIPLE GROUP-III NITRIDE LEDS ON A SINGLE SUBSTRATE - A method for forming a plurality of semiconductor light emitting devices includes forming an epitaxial layer having a first type doped layer, a light emitting layer, and a second type doped layer on a first temporary substrate. A second temporary substrate is coupled to an upper surface of the epitaxial layer with a first adhesive layer. The first temporary substrate is removed from the epitaxial layer to expose a bottom surface of the epitaxial layer. A permanent semiconductor substrate is coupled to the bottom surface of the epitaxial layer with a second adhesive layer. The second temporary substrate and the first adhesive layer are removed from the upper surface of the epitaxial layer. A plurality of semiconductor light emitting devices are formed from the epitaxial layer on the permanent semiconductor substrate. | 01-24-2013 |
20130023074 | USING ISOLATED EPITAXIAL STRUCTURES IN GLUE BONDING FOR MULTIPLE GROUP-III NITRIDE LEDS ON A SINGLE SUBSTRATE - A method for forming a plurality of semiconductor light emitting devices includes forming an epitaxial layer having a first type doped layer, a light emitting layer, and a second type doped layer on a first temporary substrate. The epitaxial layer is separated into a plurality of epitaxial structures on the first temporary substrate. A second temporary substrate is coupled to the epitaxial layer with a first adhesive layer and the first temporary substrate is removed from the epitaxial layer. A permanent semiconductor substrate is coupled to the epitaxial layer with a second adhesive layer. The second temporary substrate and the first adhesive layer are removed from the epitaxial layer. The permanent semiconductor substrate is separated into a plurality of portions with each portion corresponding to at least one of the plurality of epitaxial structures to form a plurality of semiconductor light emitting devices. | 01-24-2013 |
20130200419 | SEMICONDUCTOR LIGHT EMITTING COMPONENT - A semiconductor light emitting component including an epitaxial structure, a first electrode, a second electrode, a first cutout structure and a second cutout structure is provided. The epitaxial structure includes a first type doped layer, a light emitting portion and a second type doped layer. The first electrode is formed on a surface of the first type doped layer. The second electrode is formed on a surface of the second type doped layer. The first cutout structure is formed in the first type doped layer to expose at least a portion of the first electrode. The second cutout structure is formed in the first type doped layer, the light emitting portion and the second type doped layer so as to expose at least a portion of the second electrode. | 08-08-2013 |
20130313686 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE FOR USE THEREIN AND SEMI-FINISHED SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes: (a) providing a base unit made of a material having a first lattice constant; (b) forming a first sacrificial layer made of a material having a second lattice constant on the base unit and a second sacrificial layer made of a material having a third lattice constant on the first sacrificial layer, the first lattice constant ranging between the second and third lattice constants so that two lattice stresses in opposite directions occur in the epitaxial substrate; (c) forming an epitaxial unit on the second sacrificial layer; (d) forming a permanent substrate on the epitaxial unit; and (e) removing the epitaxial unit. | 11-28-2013 |