Patent application number | Description | Published |
20080206578 | High silicon content siloxane polymers for integrated circuits - Thin films are disclosed that are suitable as thin films in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a high silicon content film. | 08-28-2008 |
20090278254 | Dielectric materials and methods for integrated circuit applications - An integrated circuit device is provided having a substrate and areas of electrically insulating and electrically conductive material, where the electrically insulating material is a hybrid organic-inorganic material that requires no or minimal CMP and which can withstand subsequent processing steps at temperatures of 450° C. or more. | 11-12-2009 |
20100136798 | Silane monomers and siloxane polymers for semiconductor optoelectronics - A method for producing a polymer for semiconductor optoelectronics, comprising the steps of providing a monomer is produced having the formula: | 06-03-2010 |
20100317179 | METHOD FOR MAKING INTEGRATED CIRCUIT DEVICE - A method for making an integrated circuit device by: forming a plurality of transistors on a semiconductor substrate; forming multilayer interconnects by depositing a layer of metal; patterning the metal layer; depositing a first dielectric material, depositing a second dielectric material, patterning the first and second dielectric materials; and depositing a via filling metal material into the patterned areas; or, alternatively, by forming transistors on a substrate; depositing one of an electrically insulating or electrically conducting material; patterning said one of an electrically insulating or electrically conducting material; and depositing the other of the electrically insulating or electrically conducting material, so as to form a layer over said transistors having both electrically insulating and electrically conducting portions; wherein the first dielectric material, which is an organosiloxane material, and the electrically insulating material each has a carbon to silicon ratio of 1.5 to 1 or more. | 12-16-2010 |
20130143408 | ETCH RESISTANT ALUMINA BASED COATINGS - Method of forming a protective hard mask layer on a substrate in a semiconductor etch process, comprising the step of applying by solution deposition on the substrate a solution or colloidal dispersion of an alumina polymer, said solution or dispersion being obtained by hydrolysis and condensation of monomers of at least one aluminium oxide precursor in a solvent or a solvent mixture in the presence of water and a catalyst. The invention can be used for making a hard mask in a TSV process to form a high aspect ratio via a structure on a semiconductor substrate. | 06-06-2013 |
20130193543 | SEMICONDUCTOR OPTOELECTRONICS DEVICES - A semiconductor device comprising a semiconductor substrate with a plurality of photo-diodes arranged in the semiconductor substrate with interconnect layers defining apertures at the photo-diodes and a first polymer which fills the gaps such as to cover the photo-diode. Further, layers of color filters are arranged on top the gap filling polymer layer opposite to the photo-diodes and a second polymer arranged on the interconnect layers covers and planarizes and passivates the color filter layers. On top of the planarizing polymer there is a plurality of micro-lenses opposite to the color filters, and a third polymer layer is deposited on the micro-lenses for passivating the micro-lenses. According to the invention the polymer materials are comprised of a siloxane polymer which gives thermally and mechanically stable, high index of refraction, dense dielectric films exhibiting high-cracking threshold, low pore volume and pore size. | 08-01-2013 |
20140217539 | SEMICONDUCTOR OPTOELECTRONICS DEVICES - A semiconductor device comprising a semiconductor substrate with a plurality of photo-diodes arranged in the semiconductor substrate with interconnect layers defining apertures at the photo-diodes and a first polymer which fills the gaps such as to cover the photo-diode. Further, layers of color filters are arranged on top the gap filling polymer layer opposite to the photo-diodes and a second polymer arranged on the interconnect layers covers and planarizes and passivates the color filter layers. On top of the planarizing polymer there is a plurality of micro-lenses opposite to the color filters, and a third polymer layer is deposited on the micro-lenses for passivating the micro-lenses. According to the invention the polymer materials are comprised of a siloxane polymer which gives thermally and mechanically stable, high index of refraction, dense dielectric films exhibiting high-cracking threshold, low pore volume and pore size. | 08-07-2014 |
20140288260 | Organometallic Monomers and high Refractive index Polymers derived therefrom - Synthesis of thianthrene moiety containing silane and germane monomers and their polymerization is presented. The polymers show high refractive index, high transparency and excellent thermal stability. They are useful as dielectric films for semiconductor industry and for optical applications, including high-RI materials in CMOS image sensors. | 09-25-2014 |