Rahtu
Antti Rahtu, Helsinki FI
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20120189774 | ENHANCED DEPOSITION OF NOBLE METALS - The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber. | 07-26-2012 |
20140087076 | ENHANCED DEPOSITION OF NOBLE METALS - The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber. | 03-27-2014 |
Antti Rahtu, Vantaa FI
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20130183445 | ENHANCED THIN FILM DEPOSITION - Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties. | 07-18-2013 |
Antti H. Rahtu, Vantaa FI
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20150017348 | ALD OF METAL-CONTAINING FILMS USING CYCLOPENTADIENYL COMPOUNDS - Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand. | 01-15-2015 |
Esa Rahtu, Oulu FI
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20150260543 | BACKGROUND CALIBRATION - There is provided a method, comprising: acquiring results of a set of Earth's magnetic field, EMF, measurements; acquiring motion data indicating the angular rotation that the mobile device experienced during each of a plurality of EMF measurement pairs, wherein each EMF measurement pair indicates a measured first and a second EMF value; determining a bias estimate of the magnetometer on the basis of the plurality of EMF measurement pairs and the corresponding motion data by finding the bias estimate that minimizes distances between the measured second EMF values and the measured first EMF values rotated about the bias estimate by the corresponding angular rotations; and determining a correction factor corresponding to the bias estimate and applying the correction factor to the magnetometer readings. | 09-17-2015 |