Patent application number | Description | Published |
20110017977 | MEMRISTORS WITH INSULATION ELEMENTS AND METHODS FOR FABRICATING THE SAME - Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device comprises an active region disposed between a first electrode and a second electrode. The device includes a first insulation element disposed between the first electrode and an outer portion of a first surface of the active region. The first insulation element is configured with one or more opening through which the first electrode makes physical contact with the active region. The device also includes a second insulation element disposed between the second electrode and an outer portion of a second surface of the active region. The second insulation element is configured with one or more opening through which the second electrode makes physical contact with the second surface. | 01-27-2011 |
20110024714 | Nanoscale Three-Terminal Switching Device - A nanoscale three-terminal switching device has a bottom electrode, a top electrode, and a side electrode, each of which may be a nanowire. The top electrode extends at an angle with respect to the bottom electrode and has an end section going over and overlapping the bottom electrode. An active region is disposed between the top electrode and bottom electrode and contains a switching material. The side electrode is disposed opposite from the top electrode and in electrical contact with the active region. A self-aligned fabrication process may be used to automatically align the formation of the top and side electrodes with respect to the bottom electrode. | 02-03-2011 |
20110024716 | MEMRISTOR HAVING A NANOSTRUCTURE IN THE SWITCHING MATERIAL - A memristor includes a first electrode having a first surface, at least one electrically conductive nanostructure provided on the first surface, in which the at least one electrically conductive nanostructure is relatively smaller than a width of the first electrode, a switching material positioned upon said first surface, in which the switching material covers the at least one electrically conductive nanostructure, and a second electrode positioned upon the switching material substantially in line with the at least one electrically conductive nanostructure, in which an active region in the switching material is formed substantially between the at least one electrically conductive nanostructure and the first electrode. | 02-03-2011 |
20110073828 | MEMRISTOR AMORPHOUS METAL ALLOY ELECTRODES - A nanoscale switching device comprises at least two electrodes, each of a nanoscale width; and an active region disposed between and in electrical contact with the electrodes, the active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field, wherein at least one of the electrodes comprises an amorphous conductive material. | 03-31-2011 |
20110076810 | Three Dimensional Multilayer Circuit - A method for forming three-dimensional multilayer circuit includes forming an area distributed CMOS layer configured to selectively address a set of first vias and a set of second vias. A template is then aligned with the first set of vias and lower crossbar segments are created using the template. The template is then removed, rotated, and aligned with the set of second vias. Upper crossbar segments which attach to the second set of vias are then created. | 03-31-2011 |
20110122405 | GUIDED MODE RESONATOR BASED RAMAN ENHANCEMENT APPARATUS - A system for performing Raman spectroscopy comprises a waveguide layer configured with at least one array of features, the at least one array of features being configured to provide guided-mode resonance for at least one wavelength of electromagnetic radiation; and at least one fluid channel disposed in the waveguide layer. An analyte sensor comprises an electromagnetic radiation source configured to emit a range of wavelengths of electromagnetic radiation, the system for performing Raman spectroscopy, and at least one photodetector configured to detect Raman scattered light. | 05-26-2011 |
20120104342 | Memristive Device - A memristive device includes a first electrode, a second electrode crossing the first electrode at a non-zero angle, and an active region disposed between the first and second electrodes. The active region has a controlled defect profile throughout its thickness. | 05-03-2012 |
20120138885 | ELECTRICAL CIRCUIT COMPONENT - An electrical circuit component includes a first electrode, a plurality of second electrodes and a negative differential resistance (NDR) material. The first electrode and the plurality of second electrodes are connected to the NDR material and the NDR material is to electrically connect the first electrode to one of the plurality of second electrodes when a sufficient voltage is applied between the first electrode and the one of the plurality of second electrodes through the NDR material. | 06-07-2012 |
20120182550 | WAVEGUIDES CONFIGURED WITH ARRAYS OF FEATURES FOR PERFORMING RAMAN SPECTROSCOPY - Embodiments of the present invention are directed to systems for performing surface-enhanced Raman spectroscopy. In one embodiment, a system for performing Raman spectroscopy includes a waveguide layer (102,402,702,902) configured with at least one array of features, and a material (110,410,710,910) disposed on at least a portion of the features. Each array of features and the waveguide layer are configured to provide guided-mode resonance for at least one wavelength of electromagnetic radiation. The electromagnetic radiation produces enhanced Raman scattered light from analyte molecules located on or in proximity to the material. | 07-19-2012 |
20130051121 | SWITCHABLE TWO-TERMINAL DEVICES WITH DIFFUSION/DRIFT SPECIES - Various embodiments of the present invention are directed to nanoscale electronic devices that provide nonvolatile memristive switching. In one aspect, a two-terminal device ( | 02-28-2013 |