Patent application number | Description | Published |
20090055772 | SYSTEMS AND METHODS FOR ACCESSING A PHOTO PRINT SERVICE THROUGH A PRINTER DRIVER - Systems and methods are provided for uploading image files such as photos for printing to a photo printing service using a printer driver. A typical system in one aspect includes a client device having one or more processors, one or more memory devices for storing image files, applications and other computer readable instructions, a network interface device, and one or more I/O ports for communicating with various I/O devices and an external display device such as a monitor to access a photo print service through a virtual printer driver. In another aspect, the computer readable program code instructions include a printer driver module that provides virtual photo printing services to a user of the client device. | 02-26-2009 |
20110044661 | METHOD AND SYSTEM FOR DIRECT RECORDING OF VIDEO INFORMATION ONTO A DISK MEDIUM - A method for converting video information from an incoming format to an outgoing format using a process free from one or more intermediary files. The method includes receiving video information in a first format and receiving a desired output media format based upon a first input and a desired TV standard based upon a second input. The method decodes the video information in the first format to raw video information in an uncompressed format and directly resizes the raw video information in the uncompressed format into a size associated with the desired output media format and the desired TV standard. The method adjusts the uncompressed format in the size associated with the desired output media format and the desired TV standard to a frame rate associated with the desired TV standard and encodes the uncompressed format in the size and the frame rate into an elementary video stream. A step of multiplexing the elementary video stream with audio information in the desired output media format and the desired TV standard to form video and audio information in a presentation format based upon the desired output media format and the desired TV standard is included. | 02-24-2011 |
20140043529 | METHOD AND SYSTEM FOR DIRECT RECORDING OF VIDEO INFORMATION ONTO A DISK MEDIUM - A method for converting video information from an incoming format to an outgoing format using a process free from one or more intermediary files. The method includes receiving video information in a first format and receiving a desired output media format based upon a first input and a desired TV standard based upon a second input. The method decodes the video information in the first format to raw video information in an uncompressed format and directly resizes the raw video information in the uncompressed format into a size associated with the desired output media format and the desired TV standard. The method adjusts the uncompressed format in the size associated with the desired output media format and the desired TV standard to a frame rate associated with the desired TV standard and encodes the uncompressed format in the size and the frame rate into an elementary video stream. A step of multiplexing the elementary video stream with audio information in the desired output media format and the desired TV standard to form video and audio information in a presentation format based upon the desired output media format and the desired TV standard is included. | 02-13-2014 |
20150049245 | METHOD AND SYSTEM FOR DIRECT RECORDING OF VIDEO INFORMATION ONTO A DISK MEDIUM - A method for converting video information from an incoming format to an outgoing format using a process free from one or more intermediary files. The method includes receiving video information in a first format and receiving a desired output media format based upon a first input and a desired TV standard based upon a second input. The method decodes the video information in the first format to raw video information in an uncompressed format and directly resizes the raw video information in the uncompressed format into a size associated with the desired output media format and the desired TV standard. The method adjusts the uncompressed format in the size associated with the desired output media format and the desired TV standard to a frame rate associated with the desired TV standard and encodes the uncompressed format in the size and the frame rate into an elementary video stream. A step of multiplexing the elementary video stream with audio information in the desired output media format and the desired TV standard to form video and audio information in a presentation format based upon the desired output media format and the desired TV standard is included. | 02-19-2015 |
Patent application number | Description | Published |
20090011577 | METHOD OF MAKING PHASE CHANGE MATERIALS ELECTROCHEMICAL ATOMIC LAYER DEPOSITION - A method of making phase change materials on a substrate by electrochemical atomic layer deposition, which includes sequentially electrodepositing at least one atomic layer of a first element of a first solution and at least one atomic layer of a second element of a second solution on a substrate; and repeating the sequential electrodepositing until at least one film of a phase change material is formed on the substrate. | 01-08-2009 |
20090071836 | METHOD OF ELECTRODEPOSITING GERMANIUM COMPOUND MATERIALS ON A SUBSTRATE - A method of electrodepositing germanium compound materials on an exposed region of a substrate structure, which includes forming a plating solution by dissolving at least one germanium salt and at least one salt containing an element other than germanium in water; obtaining a substrate with a clean surface; immersing the substrate in the solution; and electroplating germanium compound materials on the substrate by applying an electrical potential between the substrate and an anode in the plating solution, in which the substrate is included in a semiconductor or phase change device. | 03-19-2009 |
20090294989 | FORMATION OF VERTICAL DEVICES BY ELECTROPLATING - The present invention is related to a method for forming vertical conductive structures by electroplating. Specifically, a template structure is first formed, which includes a substrate, a discrete metal contact pad located on the substrate surface, an inter-level dielectric (ILD) layer over both the discrete metal contact pad and the substrate, and a metal via structure extending through the ILD layer onto the discrete metal contact pad. Next, a vertical via is formed in the template structure, which extends through the ILD layer onto the discrete metal contact pad. A vertical conductive structure is then formed in the vertical via by electroplating, which is conducted by applying an electroplating current to the discrete metal contact pad through the metal via structure. Preferably, the template structure comprises multiple discrete metal contact pads, multiple metal via structures, and multiple vertical vias for formation of multiple vertical conductive structures. | 12-03-2009 |
20090301890 | FORMATION OF NANOSTRUCTURES COMPRISING COMPOSITIONALLY MODULATED FERROMAGNETIC LAYERS BY PULSED ECD - The present invention is related to a method for forming a structure that contains alternating first and second ferromagnetic layers of different material compositions. A substrate containing a supporting matrix with at least one open pore and a conductive base layer is first formed. Electroplating of the substrate is then carried out in an electroplating solution that contains at least one ferromagnetic metal element and one or more additional, different metal elements. A pulsed current with alternating high and low potentials is applied to the conductive base layer of the substrate structure to thereby form alternating ferromagnetic layers of different material compositions in the open pore of the supporting matrix. | 12-10-2009 |
20090302305 | SELF-CONSTRAINED ANISOTROPIC GERMANIUM NANOSTRUCTURE FROM ELECTROPLATING - A nanostructure comprising germanium, including wires of less than 1 micron in diameter and walls of less than 1 micron in width, in contact with the substrate and extending outward from the substrate is provided along with a method of preparation. | 12-10-2009 |
20110012085 | METHODS OF MANUFACTURE OF VERTICAL NANOWIRE FET DEVICES - A vertical Field Effect Transistor (FET) comprising a vertical semiconductor nanowire is formed by the following steps. Create a columnar pore in a bottom dielectric layer formed on a bottom electrode. Fill the columnar pore by plating a vertical semiconductor nanowire having a bottom end contacting the bottom electrode. The semiconductor nanowire forms an FET device with a FET channel region between a source region and a drain region formed in distal ends of the vertical semiconductor nanowire. Form a gate dielectric layer around the channel region of the vertical semiconductor nanowire and then form a gate electrode around the gate dielectric layer. Form a top electrode contacting a top end of the vertical semiconductor nanowire. | 01-20-2011 |
20110108803 | VERTICAL NANOWIRE FET DEVICES - A Vertical Field Effect Transistor (VFET) formed on a substrate, with a conductive bottom electrode formed thereon. A bottom dielectric spacer layer and a gate dielectric layer surrounded by a gate electrode are formed thereabove. Thereabove is an upper spacer layer. A pore extends therethrough between the electrodes. A columnar Vertical Semiconductor Nanowire (VSN) fills the pore and between the top and bottom electrodes. An FET channel is formed in a central region of the VSN between doped source and drain regions at opposite ends of the VSN. The gate dielectric structure, that is formed on an exterior surface of the VSN above the bottom dielectric spacer layer, separates the VSN from the gate electrode. | 05-12-2011 |
Patent application number | Description | Published |
20090206484 | MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURE - Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in the inventive metal interconnect structure shut down copper grain boundary diffusion. The composition of the metal interconnect structure after grain growth contains from about 1 ppm to about 10% of cobalt in atomic concentration. Grain boundaries extend from a top surface of a copper-cobalt alloy line to a bottom surface of the copper-cobalt alloy line, and are separated from any other grain boundary by a distance greater than a width of the copper-cobalt alloy line. | 08-20-2009 |
20090242869 | SUPER LATTICE/QUANTUM WELL NANOWIRES - Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire. | 10-01-2009 |
20090302353 | STRUCTURES CONTAINING ELECTRODEPOSITED GERMANIUM AND METHODS FOR THEIR FABRICATION - Methods for electrodepositing germanium on various semiconductor substrates such as Si, Ge, SiGe, and GaAs are provided. The electrodeposited germanium can be formed as a blanket or patterned film, and may be crystallized by solid phase epitaxy to the orientation of the underlying semiconductor substrate by subsequent annealing. These plated germanium layers may be used as the channel regions of high-mobility channel field effect transistors (FETs) in complementary metal oxide semiconductor (CMOS) circuits. | 12-10-2009 |
20100213073 | BATH FOR ELECTROPLATING A I-III-VI COMPOUND, USE THEREOF AND STRUCTURES CONTAINING SAME - A bath for electroplating a I-III-VI compound comprising: water; a copper containing precursor dissolved in said water; a selenium containing precursor dissolved in said water; and at least one member selected from the group consisting of an indium containing precursor dissolved in said water, a gallium containing precursor dissolved in said water and mixtures thereof, and at least one member selected from the group consisting of sulfur-containing organic compound dissolved in said water wherein one or more sulfur atoms directly bond with at least one carbon atom, a phosphorus-containing organic compound dissolved in said water wherein one or more phosphorus atoms directly bond with at least one carbon atom and mixtures thereof is provided along with its use to fabricate thin films, solar devices and tuned thin films. | 08-26-2010 |
20100323517 | MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURE - Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in the inventive metal interconnect structure shut down copper grain boundary diffusion. The composition of the metal interconnect structure after grain growth contains from about 1 ppm to about 10% of cobalt in atomic concentration. Grain boundaries extend from a top surface of a copper-cobalt alloy line to a bottom surface of the copper-cobalt alloy line, and are separated from any other grain boundary by a distance greater than a width of the copper-cobalt alloy line. | 12-23-2010 |
20120286236 | SUPER LATTICE/QUANTUM WELL NANOWIRES - Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire. | 11-15-2012 |
20120305066 | USE OF METAL PHOSPHORUS IN METALLIZATION OF PHOTOVOLTAIC DEVICES AND METHOD OF FABRICATING SAME - A photovoltaic device, such as a solar cell, including a copper-containing-grid metallization structure that contains a metal phosphorus layer as a diffusion barrier is provided. The copper-containing-grid metallization structure includes, from bottom to top, an electroplated metal phosphorus layer that does not include copper or a copper alloy located within a grid pattern formed on a front side surface of a semiconductor substrate, and an electroplated copper-containing layer. A method of forming such a structure is also provided. | 12-06-2012 |
20120318341 | PROCESSES FOR UNIFORM METAL SEMICONDUCTOR ALLOY FORMATION FOR FRONT SIDE CONTACT METALLIZATION AND PHOTOVOLTAIC DEVICE FORMED THEREFROM - Processes for fabricating photovoltaic devices in which the front side contact metal semiconductor alloy metallization patterns have a uniform thickness at edge portions as well as a central portion of each metallization pattern are provided. In one embodiment, a method of forming a photovoltaic device is provided that includes a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one on top of the other, wherein an upper exposed surface of one of the semiconductor portions represents a front side surface of the semiconductor substrate; forming a plurality of patterned antireflective coating layers on the front side surface of the semiconductor surface to provide a grid pattern including a busbar region and finger regions; forming a mask atop the plurality of patterned antireflective coating layers, the mask having a shape that mimics each patterned antireflective coating; electrodepositing a metal layer on the busbar region and the finger regions; removing the mask; and performing an anneal, wherein during the anneal metal atoms from the metal layer react with semiconductor atoms from the busbar region and the finger regions forming a metal semiconductor alloy. | 12-20-2012 |
20130014812 | PHOTOVOLTAIC DEVICE WITH ALUMINUM PLATED BACK SURFACE FIELD AND METHOD OF FORMING SAMEAANM Fisher; Kathryn C.AACI BrooklynAAST NYAACO USAAGP Fisher; Kathryn C. Brooklyn NY USAANM Huang; QiangAACI Sleepy HollowAAST NYAACO USAAGP Huang; Qiang Sleepy Hollow NY USAANM Papa Rao; Satyavolu S.AACI PoughkeepsieAAST NYAACO USAAGP Papa Rao; Satyavolu S. Poughkeepsie NY USAANM Yeh; Ming-LingAACI BaltimoreAAST MDAACO USAAGP Yeh; Ming-Ling Baltimore MD US - A photovoltaic device is provided that includes a semiconductor substrate including a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one on top of the other. A plurality of patterned antireflective coating layers is located on a p-type semiconductor surface of the semiconductor substrate, wherein at least one portion of the p-type semiconductor surface of the semiconductor substrate is exposed. Aluminum is located directly on the at least one portion of the p-type semiconductor surface of the semiconductor substrate that is exposed. | 01-17-2013 |
20150079723 | Pressure Transfer Process for Thin Film Solar Cell Fabrication - In one aspect, a method for fabricating a thin film solar cell includes the following steps. A first absorber material is deposited as a layer A on a substrate while applying pressure to the substrate/layer A. A second absorber material is deposited as a layer B on layer A while applying pressure to the substrate/layer B. A third absorber material is deposited as a layer C on layer B while applying pressure to the substrate/layer C. A fourth absorber material is deposited as a layer D on layer C while applying pressure to the substrate/layer D. The first absorber material comprises copper, the second absorber material comprises indium, the third absorber material comprises gallium, and the fourth absorber material comprises one or more of sulfur and selenium, and wherein by way of performing the steps of claim | 03-19-2015 |
20150136228 | PROCESSES FOR UNIFORM METAL SEMICONDUCTOR ALLOY FORMATION FOR FRONT SIDE CONTACT METALLIZATION AND PHOTOVOLTAIC DEVICE FORMED THEREFROM - A method of forming a photovoltaic device is provided that includes a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion, wherein an upper exposed surface of one of the semiconductor portions represents a front side surface of the semiconductor substrate. Patterned antireflective coating layers are formed on the front side surface of the semiconductor surface to provide a grid pattern including a busbar region and finger region. A mask having a shape that mimics each patterned antireflective coating layer is provided atop each patterned antireflective coating layer. A metal layer is electrodeposited on the busbar region and the finger regions. After removing the mask, an anneal is performed that reacts metal atoms from the metal layer react with semiconductor atoms from the busbar region and the finger regions forming a metal semiconductor alloy. | 05-21-2015 |
Patent application number | Description | Published |
20100051923 | Organischer Feldeffekt Transistor - The invention relates to an organic field-effect transistor, in particular an organic thin-layer field-effect transistor, with a gate electrode, a drain electrode and a source electrode, an active layer of organic material which during operation is configured to form an electrical line channel, a dielectric layer which electrically isolates the active layer from the gate electrode, a dopant material layer which consists of a molecular dopant material whose molecules consist of two or more atoms and which dopant material is an electrical dopant for the organic material of the active layer, and wherein the dopant material layer is formed in a boundary surface region between the active layer and the dielectric layer or is formed adjacent to the boundary surface region. | 03-04-2010 |
20100065833 | Organic field-effect transistor and circuit - The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer. | 03-18-2010 |
20120074392 | Tandem White OLED - Organic electroluminescent devices and components containing the organic electroluminescent devices are provided herein. The organic electroluminescent devices include a substrate, a first light emitting unit, a second light emitting unit, a first electrode, and a second electrode. The light emitting units are positioned between the first and second electrode. The light emitting units have light emitting regions containing various emitter materials. | 03-29-2012 |
20130210192 | Semiconductor Component - The invention concerns a semiconductor component with a layered arrangement with an electrode, an organic semiconductor layer, an injection layer, and an additive layer, which consists of an additive, which on contact with the molecular doping material modifies its doping affinity with respect to the organic material of the organic semiconductor layer, wherein in the injection layer a layered region is formed with a first doping affinity of the molecular doping material with respect to the organic material and a further layered region is formed with a second, in comparison to the first doping affinity smaller, doping affinity of the molecular doping material with respect to the organic material. Furthermore the invention concerns a method for the manufacture of a semiconductor component and also the application of a semiconductor component. | 08-15-2013 |
Patent application number | Description | Published |
20120055612 | ELECTRODEPOSITION METHODS OF GALLIUM AND GALLIUM ALLOY FILMS AND RELATED PHOTOVOLTAIC STRUCTURES - Photovoltaic devices and methods for preparing a p-type semiconductor layer for the photovoltaic devices generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy with the electroplating process. | 03-08-2012 |
20130008798 | ELECTRODEPOSITION METHODS OF GALLIUM AND GALLIUM ALLOY FILMS AND RELATED PHOTOVOLTAIC STRUCTURES - Photovoltaic devices and methods for preparing a p-type semiconductor generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy. | 01-10-2013 |
20130206233 | CHECKING THE STOICHIOMETRY OF I-III-VI LAYERS FOR USE IN PHOTOVOLTAIC USING IMPROVED ELECTROLYSIS CONDITIONS - The invention relates to manufacturing a I-III-VI compound in the form of a thin film for use in photovoltaics, including the steps of: a) electrodepositing a thin-film structure, consisting of I and/or III elements, onto the surface of an electrode that forms a substrate (SUB); and b) incorporating at least one VI element into the structure so as to obtain the I-III-VI compound. According to the invention, the electrodeposition step comprises checking that the uniformity of the thickness of the thin film varies by no more than 3% over the entire surface of the substrate receiving the deposition. | 08-15-2013 |
20130269780 | INTERFACE BETWEEN A I-III-VI2 MATERIAL LAYER AND A MOLYBDENUM SUBSTRATE - The present invention relates to a method for fabricating a thin layer made of a alloy and having photovoltaic properties. The method according to the invention comprises first steps of: a) depositing an adaptation layer (MO) on a substrate (SUB), b) depositing at least one layer (SEED) comprising at least elements I and/or III, on said adaptation layer. The adaptation layer is deposited under near vacuum conditions and step b) comprises a first operation of depositing a first layer of I and/or III elements, under same conditions as the deposition of the adaptation layer, without exposing to air the adaptation layer. | 10-17-2013 |
Patent application number | Description | Published |
20120235419 | COOLING DEVICE USED FOR COOLING WIND TURBINE GENERATOR SYSTEM AS WELL AS WIND TURBINE GENERATOR SYSTEM - The present invention discloses a cooling device for cooling a wind turbine generator system as well as the wind turbine generator system, wherein the cooling device comprises: a first cooling circuit used for sealing and cycling a first coolant and comprising a first inflow pipeline, one or more heat-absorbing units, a first outflow pipeline and a heat dissipation unit which are in fluid communication with each other in sequence, and the heat dissipation unit being connected to the first inflow pipeline and thus forming the first cooling circuit to be circulatory, and a second cooling circuit used for cooling the heat dissipation unit of the first cooling circuit, a second coolant being adopted by the second cooling circuit and taking away the heat in the heat dissipation unit, so that a first gaseous coolant in the heat dissipation unit is transformed into a first liquid coolant. | 09-20-2012 |
20120238715 | ISOOLEFIN POLYMERS AND PROCESS FOR PREPARING THE SAME - The present invention relates to isoolefin polymers and process for preparing the same. The present invention especially discloses a polymerization process for the cationic polymerization of isoolefin monomers in an aqueous reaction medium, and isoolefin polymers obtained by such process. In one embodiment, the present invention relates to a polymerization process for the cationic polymerization of isoolefin monomers in an aqueous reaction medium, and isoolefin polymers obtained therefrom. In another embodiment, the present invention relates to a dispersion polymerization process for the cationic copolymerization of isoolefins with conjugated or non-conjugated diolefins and/or vinyl aromatic compounds, and copolymers obtained therefrom. | 09-20-2012 |
20120329973 | INITIATING SYSTEM FOR CATIONIC POLYMERIZATION AND POLYMERIZATION PROCESS - The present invention discloses an initiating system for cationic polymerization and a polymerization process. The present application relates to an initiating system for cationic polymerization of cationic-polymerizable monomers, and a process for cationic polymerization of cationic-polymerizable monomers by using the initiating system. The present invention particular involves an initiating system for cationic polymerization of cationic-polymerizable monomers in an aqueous reaction medium, and a process for cationic polymerization of cationic-polymerizable monomers by using the initiating system in an aqueous reaction medium. | 12-27-2012 |
20150212372 | LIQUID CRYSTAL PIXEL ELECTRODE STRUCTURE, ARRAY SUBSTRATE AND DISPLAY APPARATUS - A liquid crystal pixel electrode structure, an array substrate, and a display apparatus are provided. The pixel electrode structure comprises a first pixel electrode ( | 07-30-2015 |
Patent application number | Description | Published |
20120268290 | TECHNOLOGY AND DEVICE FOR PRECISELY MEASURING TEMPERATURE OF CABLE JOINT ON THE BASIS OF RADIO FREQUENCY TECHNIQUE - The invention provides a method and a device for on-line measuring the inner temperature of a cable joint, the device includes a built-in temperature measurer and an outside receiver. The built-in temperature measurer measures the temperature of the cable joint or a core wire surface by means of direct contact measuring method, and transmits the data to the outside receiver through an insulating layer by means of the radio frequency identification technique. At the same time, the outside receiver supplies power energy to the built-in temperature measurer by means of the radio frequency signal, so it resolves the problem of supplying power to the built-in temperature measurer. The device of the invention has the advantage of accurately measuring temperature, small volume, superior applicability and so on. | 10-25-2012 |
20140334521 | COUPLING-BASED NON-CONTACT TYPE TEMPERATURE MEASUREMENT SYSTEM AND MEASUREMENT METHOD THEREOF - A coupling-based non-contact type temperature measurement system includes a controller, a drive circuit connected to the controller, a switch circuit connected to the drive circuit, a resonance circuit connected to the switch circuit, a temperature sensor coupled to the resonance circuit, and a signal detection circuit connected to the resonance circuit and the controller. In the measurement system, the temperature sensor is isolated from other components of the system, and non-contact type temperature measurement of an object is implemented through electromagnetic coupling. Further provided is a measurement method of a coupling-based non-contact type temperature measurement system. The measurement method implements the transfer of a temperature signal in an electromagnetic coupling form, and performs calculation and analysis according to the temperature signal, thereby implementing non-contact type temperature of an object, and is therefore applicable to reliable temperature measurement for internal core wires in high-voltage power cables. | 11-13-2014 |
Patent application number | Description | Published |
20130025663 | INVERTED PYRAMID TEXTURE FORMATION ON SINGLE-CRYSTALLINE SILICON - A method for texturing a single-crystalline silicon substrate is provided in which inverted pyramids are formed within the textured single-crystalline silicon substrate. The textured single-crystalline silicon substrates containing the inverted pyramids provided by the present disclosure have a low reflectance associated therewith and thus can be used as a component of a silicon solar cell. The method includes forming a plurality of openings that extend beneath an upper surface of a single-crystalline silicon substrate, and forming inverted pyramids in each of the openings by expanding each opening. | 01-31-2013 |
20130045562 | BURIED SELECTIVE EMITTER FORMATION FOR PHOTOVOLTAIC DEVICES UTILIZING METAL NANOPARTICLE CATALYZED ETCHING - A method of forming a photovoltaic device containing a buried emitter region and vertical metal contacts is provided. The method includes forming a plurality of metal nanoparticles on exposed portions of a single-crystalline silicon substrate that are not covered by patterned antireflective coatings (ARCs). A metal nanoparticle catalyzed etching process is then used to form trenches within the single-crystalline silicon substrate and thereafter the metal nanoparticles are removed from the trenches. An emitter region is then formed within exposed portions of the single-crystalline silicon substrate, and thereafter a metal contact is formed atop the emitter region. | 02-21-2013 |
20130061916 | PHOTOVOLTAIC CELLS WITH COPPER GRID - A photovoltaic device, such as a solar cell, having improved performance is provided. The photovoltaic device includes a copper-containing layer that contains an amount of impurities therein which is sufficient to hinder the diffusion of copper into an underlying semiconductor substrate. The copper-containing layer, which is located within a grid pattern formed on a front side surface of a semiconductor substrate, includes an electroplated copper-containing material having an impurity level of 200 ppm or greater located atop at least one metal diffusion barrier layer. | 03-14-2013 |
20130061917 | PHOTOVOLTAIC DEVICES WITH METAL SEMICONDUCTOR ALLOY METALLIZATION - A photovoltaic device, such as a solar cell, having improved performance is provided. In one embodiment, the photovoltaic device includes a multimetal semiconductor alloy layer located on exposed portions of a front side surface of a semiconductor substrate. The multimetal semiconductor alloy layer includes at least a first elemental metal that forms an alloy with a semiconductor material, and a second elemental metal that differs from the first elemental metal and that does not form an alloy with a semiconductor material at the same temperature as the first elemental metal. The photovoltaic device further includes a copper-containing layer located atop the multimetal semiconductor alloy layer. | 03-14-2013 |
20130062769 | Microstructure Modification in Copper Interconnect Structures - A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90 nm technologies. Preferably, bamboo grains are separated at distances less than the “Blech” length so that copper (Cu) diffusion through grain boundaries is avoided. The added Mn also triggers the growth of Cu grains down to the bottom surface of the metal line so that a true bamboo microstructure reaching to the bottom surface is formed and the Cu diffusion mechanism along grain boundaries oriented along the length of the metal line is eliminated. | 03-14-2013 |
20130065345 | PHOTOVOLTAIC DEVICES WITH METAL SEMICONDUCTOR ALLOY METALLIZATION - A photovoltaic device, such as a solar cell, having improved performance is provided. In one embodiment, the photovoltaic device includes a multimetal semiconductor alloy layer located on exposed portions of a front side surface of a semiconductor substrate. The multimetal semiconductor alloy layer includes at least a first elemental metal that forms an alloy with a semiconductor material, and a second elemental metal that differs from the first elemental metal and that does not form an alloy with a semiconductor material at the same temperature as the first elemental metal. The photovoltaic device further includes a copper-containing layer located atop the multimetal semiconductor alloy layer. | 03-14-2013 |
20130065351 | PHOTOVOLTAIC CELLS WITH COPPER GRID - A photovoltaic device, such as a solar cell, having improved performance is provided. The photovoltaic device includes a copper-containing layer that contains an amount of impurities therein which is sufficient to hinder the diffusion of copper into an underlying semiconductor substrate. The copper-containing layer, which is located within a grid pattern formed on a front side surface of a semiconductor substrate, includes an electroplated copper-containing material having an impurity level of 200 ppm or greater located atop at least one metal diffusion barrier layer. | 03-14-2013 |
20130285245 | MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURES - A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub- | 10-31-2013 |
20140000691 | INTEGRATION OF A TITANIA LAYER IN AN ANTI-REFLECTIVE COATING | 01-02-2014 |
20140000693 | INTEGRATION OF A TITANIA LAYER IN AN ANTI-REFLECTIVE COATING | 01-02-2014 |
20140127899 | MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURES - A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90 nm technologies. Preferably, bamboo grains are separated at distances less than the “Blech” length so that copper (Cu) diffusion through grain boundaries is avoided. The added Mn also triggers the growth of Cu grains down to the bottom surface of the metal line so that a true bamboo microstructure reaching to the bottom surface is formed and the Cu diffusion mechanism along grain boundaries oriented along the length of the metal line is eliminated. | 05-08-2014 |
20150280022 | SURFACE PREPARATION AND UNIFORM PLATING ON THROUGH WAFER VIAS AND INTERCONNECTS FOR PHOTOVOLTAICS - Photovoltaic devices are formed by laser drilling vias through silicon substrates and, following surface preparation of the via sidewalls, plating a continuous, electrically conductive layer on the via sidewalls to electrically connect the emitter side of the cell with the back side of the cell. The electrically conductive layer can be formed on portions of a base emitter within the vias and on the back side of the substrate. Alternatively, the electrically conductive layer can be formed on a passivation layer on the via sidewalls and back side of the cell. | 10-01-2015 |
20150325716 | MANUFACTURE AND STRUCTURE FOR PHOTOVOLTAICS INCLUDING METAL-RICH SILICIDE - Photovoltaic devices are formed with electroplated metal grids that are effectively adhered to the devices. Metal-rich silicides, such as nickel silicides, are formed on the devices by annealing. The metal used in the anneal exhibits low stress. Annealing may be conducted in ambient air followed by removal of oxide and excess metal from the metal-rich silicide. Laser patterning of the antireflective coating of the devices can be used to expose the emitter to form front grid contacts. Doping of the emitter in the patterned region can be increased during laser patterning. The ratio of the centerline to centerline pitch per laser width is controlled to ensure sufficient adhesion of subsequently plated busbars. | 11-12-2015 |
Patent application number | Description | Published |
20130210757 | DOUBLE-LIVER-TARGETING PHOSPHORAMIDATE AND PHOSPHONOAMIDATE PRODRUGS - This application discloses phosphoramidate and phosphonoamidate prodrugs of alcohol-based therapeutic agents, such as nucleosides, nucleotides, acyclonucleosides, C-nucleosides, and C-nucleotides, and use of these prodrugs for treatment of diseases or disorders, including infectious diseases and cancers. This application also discloses a general method for enhancing bioavailability and/or liver-targeting property of alcohol drugs through converting the alcohol drugs to phosphoramidate or phosphonoamidate prodrugs, and methods of preparation of these prodrugs. | 08-15-2013 |
20140315850 | 2',3'-Dideoxy-2'-alpha-Fluoro-2'-beta-C-Methylnucleosides and Prodrugs Thereof - The present invention is made to fulfill the foregoing need. Since most of antiHN nucleosides are 2′,3′-dideoxynucleosides that have been proved to be excellent substrates of kinases for the phosphorylations. 2′,3′-Dideoxy-2,-a-fluoro-2′-{3-C-methyl-nucleosides can be considered as one unique class of 2′,3′-dideoxynucleosides to be good substrate of kinases because fluorine mimics hydrogen. It also can be considered as ribo-nucleosides to incorporate into RNA of HCV because 2′-fluorine-a mimics 2′-a-OH group. | 10-23-2014 |
Patent application number | Description | Published |
20150203172 | Power assistance bicycle using sensor having multiple magnet blocks evenly distributed in housing - A power-assistance bicycle using a sensor having multiple magnet blocks evenly distributed in housing, related to electric power-assistance bicycles that provide a power-assistance signal with multipoint magnetic induction. The sensor comprises: a sensing element, a power assistance model processor ( | 07-23-2015 |
20150204694 | Sensor with magnetic blocks unevenly distributed in housing - A sensor with magnetic blocks unevenly distributed in a housing includes, sequentially connected, a sensing element, a power assistance model processor (21), a digital-to-analog converter (27), and an operational amplifier (28). The sensing element includes permanent magnetic blocks (2) and a Hall element (3) arranged in a cavity fitted together by a rotating disk (1) and a fixing disk (40). Multiple permanent magnetic blocks (2) are fixedly arranged on the rotating disk (1) in a circular-annular distribution, and at most two of the permanent magnetic blocks (2) are different in intervals. On a certain side of the rotating disk (1), the magnetic polarities of adjacent permanent magnetic blocks (2) are opposite, namely, the magnetic polarities of all of the permanent magnetic blocks (2) on the certain side of the rotating disk (1) are distributed in a pattern of pole N, pole S, pole N . . . . | 07-23-2015 |
20150204695 | Power-assisted bicycle having sensor with multiple magnet positions and magnetic fluxes unevenly distributed in shell - A power-assisted bicycle having a sensor with multiple magnet positions and magnetic fluxes unevenly distributed in a shell includes a sensor which includes a sensing element, a power assistance model processor ( | 07-23-2015 |
20150211893 | Sensor having multiple magnetic blocks of unevenly distributed magnetic fluxes in housing - A sensor having multiple magnetic blocks of unevenly distributed magnetic fluxes in a housing includes, sequentially connected, a sensing element, a power-assisted model processor ( | 07-30-2015 |
Patent application number | Description | Published |
20150203172 | Power assistance bicycle using sensor having multiple magnet blocks evenly distributed in housing - A power-assistance bicycle using a sensor having multiple magnet blocks evenly distributed in housing, related to electric power-assistance bicycles that provide a power-assistance signal with multipoint magnetic induction. The sensor comprises: a sensing element, a power assistance model processor ( | 07-23-2015 |
20150204694 | Sensor with magnetic blocks unevenly distributed in housing - A sensor with magnetic blocks unevenly distributed in a housing includes, sequentially connected, a sensing element, a power assistance model processor (21), a digital-to-analog converter (27), and an operational amplifier (28). The sensing element includes permanent magnetic blocks (2) and a Hall element (3) arranged in a cavity fitted together by a rotating disk (1) and a fixing disk (40). Multiple permanent magnetic blocks (2) are fixedly arranged on the rotating disk (1) in a circular-annular distribution, and at most two of the permanent magnetic blocks (2) are different in intervals. On a certain side of the rotating disk (1), the magnetic polarities of adjacent permanent magnetic blocks (2) are opposite, namely, the magnetic polarities of all of the permanent magnetic blocks (2) on the certain side of the rotating disk (1) are distributed in a pattern of pole N, pole S, pole N . . . . | 07-23-2015 |
20150204695 | Power-assisted bicycle having sensor with multiple magnet positions and magnetic fluxes unevenly distributed in shell - A power-assisted bicycle having a sensor with multiple magnet positions and magnetic fluxes unevenly distributed in a shell includes a sensor which includes a sensing element, a power assistance model processor ( | 07-23-2015 |
20150211893 | Sensor having multiple magnetic blocks of unevenly distributed magnetic fluxes in housing - A sensor having multiple magnetic blocks of unevenly distributed magnetic fluxes in a housing includes, sequentially connected, a sensing element, a power-assisted model processor ( | 07-30-2015 |