Prindle
Arthur Prindle, San Diego, CA US
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20150133339 | MULTISCALE PLATFORM FOR COORDINATING CELLULAR ACTIVITY USING SYNTHETIC BIOLOGY - This invention provides a multiscale platform for coordinating behavior using synthetic biology. The platform reduces the impact of underlying noise, making outputs more coherent and reliable at the macroscopic level. | 05-14-2015 |
20160033485 | COMPOSITIONS AND METHODS FOR CANCER DIAGNOSIS - The present disclosure provides compositions comprising a food product, non-pathogenic microorganism, kits, methods of diagnosing a tumor in a subject, methods of quantifying the number of cancer cells in a cell sample, and methods of detecting a cancer cell, cancer tissue, or cell associated with a hyperproliferative disorder. In some embodiments, the method comprises a step of detecting the presence or absence of a modified substrate or portion thereof in urine of an animal without an instrument and solely by visual inspection of the urine. | 02-04-2016 |
Carl Prindle, Boston, MA US
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20140344109 | LINKING ONLINE AND RETAIL-LOCATION SHOPPING CARTS - A system for linking a shopper's online electronic shopping cart with the shopper's in-store electronic shopping cart is provided. The system includes an online website of a merchant for the purchase of goods by one or more shoppers. Each shopper is provided with an online electronic shopping cart accessible through the website and an in-store electronic shopping cart accessible at a local retail location. The online and in-store electronic shopping carts are linked by placing one or more items contained in the online shopping cart in the in-store shopping cart and vice versa. Related apparatus, methods, techniques and articles are also described. | 11-20-2014 |
20150186978 | Linking Online and Retail-Location Shopping Carts - A system for linking a shopper's online electronic shopping cart with the shopper's in-store electronic shopping cart is provided. The system includes an online website of a merchant for the purchase of goods by one or more shoppers. Each shopper is provided with an online electronic shopping cart accessible through the website and an in-store electronic shopping cart accessible at a local retail location. The online and in-store electronic shopping carts are linked by placing one or more items contained in the online shopping cart in the in-store shopping cart and vice versa. Related apparatus, methods, techniques and articles are also described. | 07-02-2015 |
Chris M. Prindle, Dresden DE
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20130217221 | DRY ETCH POLYSILICON REMOVAL FOR REPLACEMENT GATES - Semiconductor devices are formed with a gate last, high-K/metal gate process with complete removal of the polysilicon dummy gate and with a gap having a low aspect ratio for the metal fill. Embodiments include forming a dummy gate electrode on a substrate, the dummy gate electrode having a nitride cap, forming spacers adjacent opposite sides of the dummy gate electrode forming a gate trench therebetween, dry etching the nitride cap, tapering the gate trench top corners; performing a selective dry etch on a portion of the dummy gate electrode, and wet etching the remainder of the dummy gate electrode. | 08-22-2013 |
Christopher Prindle, Poughkeepsie, NY US
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20090246959 | TWO STEP OPTICAL PLANARIZING LAYER ETCH - Methods are provided for etching during fabrication of a semiconductor device. The method includes initially etching to partially remove a portion of one or more lithographic-aiding layers overlying an oxide layer while etching a first portion of the oxide layer in accordance with a mask formed by the one or more lithographic-aiding layers, and thereafter additionally etching to remove remaining portions of the one or more lithographic-aiding layers while etching a remaining portion of the oxide layer. | 10-01-2009 |
20150333136 | SEMICONDUCTOR DEVICES WITH REPLACEMENT SPACER STRUCTURES - One illustrative method disclosed herein includes removing the sidewall spacers and a gate cap layer so as to thereby expose an upper surface and sidewalls of a sacrificial gate structure, forming an etch stop layer above source/drain regions of a device and on the sidewalls and upper surface of the sacrificial gate structure, forming a first layer of insulating material above the etch stop layer, removing the sacrificial gate structure so as to define a replacement gate cavity that is laterally defined by portions of the etch stop layer, forming a replacement gate structure in the replacement gate cavity, and forming a second gate cap layer above the replacement gate structure. | 11-19-2015 |
20150340471 | RAISED SOURCE/DRAIN EPI WITH SUPPRESSED LATERAL EPI OVERGROWTH - A method of forming raised S/D regions by partial EPI growth with a partial EPI liner therebetween and the resulting device are provided. Embodiments include forming groups of fins extending above a STI layer; forming a gate over the groups of fins; forming a gate spacer on each side of the gate; forming a raised S/D region proximate to each spacer on each fin of the groups of fins, each raised S/D region having a top surface, vertical sidewalls, and an undersurface; forming a liner over and between each raised S/D region; removing the liner from the top surface of each raised S/D region and from in between a group of fins; forming an overgrowth region on the top surface of each raised S/D region; forming an ILD over and between the raised S/D regions; and forming a contact through the ILD, down to the raised S/D regions. | 11-26-2015 |
20160056238 | RAISED SOURCE/DRAIN EPI WITH SUPPRESSED LATERAL EPI OVERGROWTH - A method of forming raised S/D regions by partial EPI growth with a partial EPI liner therebetween and the resulting device are provided. Embodiments include forming groups of fins extending above a STI layer; forming a gate over the groups of fins; forming a gate spacer on each side of the gate; forming a raised S/D region proximate to each spacer on each fin of the groups of fins, each raised S/D region having a top surface, vertical sidewalls, and an undersurface; forming a liner over and between each raised S/D region; removing the liner from the top surface of each raised S/D region and from in between a group of fins; forming an overgrowth region on the top surface of each raised S/D region; forming an ILD over and between the raised S/D regions; and forming a contact through the ILD, down to the raised S/D regions. | 02-25-2016 |
Christopher Prindle, Dresden DE
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20130168773 | High-K Metal Gate Electrode Structure Formed by Removing a Work Function on Sidewalls in Replacement Gate Technology - When forming sophisticated high-k metal gate electrode structures on the basis of a replacement gate approach, the fill conditions upon filling in the highly conductive electrode metal, such as aluminum, may be enhanced by removing the final work function metal, for instance a titanium nitride material in P-channel transistors, only preserving a well-defined bottom layer. | 07-04-2013 |
Christopher M. Prindle, Poughkeepsie, NY US
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20100072623 | SEMICONDUCTOR DEVICE WITH IMPROVED CONTACT PLUGS, AND RELATED FABRICATION METHODS - Semiconductor device structures and related fabrication methods are provided herein. One fabrication method relates to the formation of conductive contact plugs for a semiconductor device. The method begins by providing a semiconductor device structure having a conductive contact region, a layer of insulating material overlying the conductive contact region, and a via formed in the layer of insulating material and terminating at the conductive contact region. The fabrication process then deposits a first electrically conductive material on the semiconductor device structure such that the first electrically conductive material at least partially fills the via. Then, the process anisotropically etches a portion of the first electrically conductive material located in the filled via, resulting in a lined via. Thereafter, the process deposits a second electrically conductive material on the semiconductor device structure such that the second electrically conductive material at least partially fills the lined via. | 03-25-2010 |
20150187905 | METHODS OF FORMING GATE STRUCTURES FOR SEMICONDUCTOR DEVICES USING A REPLACEMENT GATE TECHNIQUE AND THE RESULTING DEVICES - One method disclosed herein includes, among other things, forming sidewall spacers adjacent opposite sides of a sacrificial gate electrode of a sacrificial gate structure, forming a tensile-stressed layer of insulating material adjacent the sidewall spacers, removing the sacrificial gate structure to define a replacement gate cavity positioned between the sidewall spacers, forming a replacement gate structure in the replacement gate cavity, forming a tensile-stressed gate cap layer above the replacement gate structure and within the replacement gate cavity and, after forming the tensile-stressed gate cap layer, removing the tensile-stressed layer of insulating material. | 07-02-2015 |
20150340468 | RECESSED CHANNEL FIN DEVICE WITH RAISED SOURCE AND DRAIN REGIONS - A method includes forming at least one fin in a semiconductor substrate. A sacrificial gate structure is formed around a first portion of the at least one fin. Sidewall spacers are formed adjacent the sacrificial gate structure. The sacrificial gate structure and spacers expose a second portion of the at least one fin. An epitaxial material is formed on the exposed second portion. At least one process operation is performed to remove the sacrificial gate structure and thereby define a gate cavity between the spacers that exposes the first portion of the at least one fin. The first portion of the at least one fin is recessed to a first height less than a second height of the second portion of the at least one fin. A replacement gate structure is formed within the gate cavity above the recessed first portion of the at least one fin. | 11-26-2015 |
Christopher M. Prindle, Dresden DE
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20130214335 | Replacement Gate Approach for High-K Metal Gate Stacks by Using a Multi-Layer Contact Level - In a replacement gate approach, the dielectric material for laterally encapsulating the gate electrode structures may be provided in the form of a first interlayer dielectric material having superior gap filling capabilities and a second interlayer dielectric material that provides high etch resistivity and robustness during a planarization process. In this manner, undue material erosion upon replacing the placeholder material may be avoided, which results in reduced yield loss and superior device uniformity. | 08-22-2013 |
Christopher Michael Prindle, Poughkeepsie, NY US
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20150340229 | TRANSISTOR(S) WITH DIFFERENT SOURCE/DRAIN CHANNEL JUNCTION CHARACTERISTICS, AND METHODS OF FABRICATION - Field-effect transistors (FETs) and methods of fabricating field-effect transistors are provided, with one or both of a source cavity or a drain cavity having different channel junction characteristics. The methods include, for instance, recessing a semiconductor material to form a cavity adjacent to a channel region of the transistor, the recessing defining a bottom channel interface surface and a sidewall channel interface surface within the cavity; providing a protective liner over the sidewall channel interface surface, with the bottom channel interface surface being exposed within the cavity; processing the bottom channel interface surface to facilitate forming a first channel junction of the transistor; and removing the protective liner from over the sidewall channel interface surface, and subsequently processing the sidewall channel interface surface to form a second channel junction of the transistor, where the first and second channel junctions have different channel junction characteristics. | 11-26-2015 |
Joseph Prindle, Santa Monica, CA US
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20140375667 | VISUALIZATION INTERFACE FOR DETERMINING RISK - Examples of the disclosure are directed to generating visualizations that illustrate various measures of risk associated with a litagion® agent in the context of entire industries or specific to a single party that produces or uses the litagion® agent. A Quindrex™ visualization can illustrate catastrophic risk presented by a risk agent, such as a litagion® agent. For example, the risk agent may be a chemical such as bisphenol A (BPA) or benzene. The visualization can include a plurality of portions, each corresponding to a metric of catastrophic risk associated with the risk agent visualized. A dartboard visualization can illustrate catastrophic risk presented by risk agents produced or used by a party, such as a company. The visualization can include a plurality of portions, such as wedges in a dartboard, each corresponding to a risk agent produced or used by the party. | 12-25-2014 |
Justin C Prindle, Houston, TX US
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20160063254 | Retrieving System Boot Code from a Non-Volatile Memory - A controller monitors for an indication from core logic indicating that the core logic is in a state in which the core logic does not access a bus. In response to detecting the indication, the controller retrieves the system boot code from a non-volatile memory over the bus. | 03-03-2016 |
Katherine Prindle, Robbinsdale, MN US
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20100030316 | BIFURCATION CATHETER DUAL BALLOON BOND AND METHODS - A catheter assembly includes a main catheter branch having a catheter shaft and a distal end portion. A main balloon and a side balloon are positioned at the distal end portion of the catheter shaft. The main balloon includes a distal waste portion at a distal end thereof and a proximal waste portion at a proximal end thereof. The side balloon includes an inflatable portion, a proximal waste portion, and a distal waste portion, wherein the proximal and distal waste portions define a side inflation lumen. The proximal waste portion of the side balloon and the proximal waste portion of the main balloon are secured to the distal end portion of the catheter shaft at a single bond or connection point to create a proximal balloon joint, wherein the main inflation lumen is in fluid communication with the main balloon and the side inflation lumen. | 02-04-2010 |
20120209367 | BIFURCATION CATHETER DUAL BALLOON BOND AND METHODS - A catheter assembly includes a main catheter branch having a catheter shaft and a distal end portion. A main balloon and a side balloon are positioned at the distal end portion of the catheter shaft. The main balloon includes a distal waist portion at a distal end thereof and a proximal waist portion at a proximal end thereof. The side balloon includes an inflatable portion, a proximal waist portion, and a distal waist portion, wherein the proximal and distal waist portions define a side inflation lumen. The proximal waist portion of the side balloon and the proximal waist portion of the main balloon are secured to the distal end portion of the catheter shaft at a single bond or connection point to create a proximal balloon joint, wherein the main inflation lumen is in fluid communication with the main balloon and the side inflation lumen. | 08-16-2012 |
Katherine M. Prindle, Robbinsdale, MN US
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20120101562 | STENT DELIVERY SYSTEM - Stent delivery systems and methods for making and using stent delivery systems are disclosed. An example stent delivery system may include an inner member. A sheath may be disposed about the inner member. The sheath may include a compressible coil. A stent may be disposed between the inner member and the sheath. A membrane may extend between the inner member and the sheath. The membrane may be configured to be disposed on the stent. An outer member may be disposed over the sheath. | 04-26-2012 |
20140142506 | BALLOON CATHETER WITH IMPROVED PUSHABILITY - Embodiments of the disclosure describe a balloon catheter. The balloon catheter may include a catheter shaft including a proximal shaft, a midshaft attached to the proximal shaft, and a distal shaft attached to the midshaft. A balloon may be coupled to the distal shaft. An inflation lumen may be defined in the catheter shaft that extends from the proximal shaft, through the midshaft, and into the distal shaft. The inflation lumen may be in fluid communication with the balloon. A core wire may be extending through a portion of the inflation lumen. A push member may be coupled to the core wire, the push member being configured to engage an inner wall surface of the catheter shaft. | 05-22-2014 |
Kathy Prindle, Robbinsdale, MN US
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20090312702 | BIFURCATION CATHETER ASSEMBLY WITH DISTALLY MOUNTED SIDE BALLOON AND METHODS - A catheter assembly and related methods directed to a main balloon and a side balloon, wherein the side balloon is coupled in fluid communication with the main balloon at a location distal of the side balloon. In one example, a side inflation member couples the side balloon in fluid communication to the main balloon at a distal end portion of the main balloon. A side catheter branch of the catheter assembly, which defines a side guidewire lumen, can be operatively mounted to the side balloon at a side balloon connection point to help maintain alignment of the side catheter branch relative to the side balloon. | 12-17-2009 |
20100030192 | CATHETER SHAFT BOND ARRANGEMENTS AND METHODS - A catheter shaft bond arrangement includes a first catheter shaft defining a first lumen, a second catheter shaft defining a second lumen, and a first bonding member. The first bonding member is configured to bond with the first and second catheter shafts to create a molded bond upon application of heat to the first bonding member. The molded bond provides a fixed axial and radial orientation of the first and second catheter shafts relative to each other. The molded bond can be generated in some arrangements without the use of the first bonding member. In other arrangements, two or more bonding members can be used to create the molded bond. | 02-04-2010 |
20100036477 | STENT EDGE PROTECTION AND METHODS - A catheter assembly and related methods directed to stent edge protection for an edge of a stent. One example stent edge protect member is positioned with a distal end portion of the stent edge protect member arranged proximal of and adjacent to a proximal end of the stent. The stent edge protect member defines an outer surface that transitions from an outer surface of the stent at the proximal end of the stent to an outer surface of the catheter branch on which the stent edge protect member is positioned. The stent edge protect member can be positioned on a single catheter branch or multiple catheter branches. | 02-11-2010 |
20110118817 | STENT DELIVERY SYSTEM - Stent delivery systems, including self-expanding stent delivery systems, and methods for making and using the same. A self-expanding stent delivery system may include an inner member. An outer sheath may be slidably disposed about the inner member. A self-expanding stent may be disposed between the inner member and the outer sheath. A rolling membrane may be attached to the outer sheath and to the inner member. A lubricious component may be disposed adjacent the outer sheath for reducing friction between the outer sheath and the membrane. | 05-19-2011 |
Marc J. Prindle, Seattle, WA US
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20110230433 | COMPOSITIONS AND METHODS FOR TREATMENT OF CANCER - Described herein are novel methods and compositions for treatment of cancer by increasing the mutation rate of cancer cells beyond an error threshold, over which the cancer cells are no longer viable. In particular, mutagenic compounds such as nucleoside analogs for treatment of cancer are also described herein. | 09-22-2011 |
Mark Albert Prindle, Amery, WI US
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20130200618 | HIGH EFFICIENCY WIND TURBINE - A wind driven generator may have a first rotating element associated with a first set of vanes distributed so as to be driven by wind in a first rotational direction about an axis of rotation. A second element is associated with a second set of vanes distributed so as to be driven by the wind in a second rotational direction opposite to the first rotational direction concentric with the axis of rotation of the first rotating element. The first rotating element has magnetic elements disposed thereon that project a magnetic field towards and onto the second rotating element. The second rotating element has electromagnetic coils disposed thereon, the electromagnetic coils being exposed to the magnetic field projected from the first rotating element. | 08-08-2013 |
Michael D. Prindle, Louisville, KY US
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20140343726 | Machine for Selling Precious Metals and Method of Use Thereof - A machine is used for selling precious metals. The precious metals include gold, silver and the like. The precious metals could be either in a form of bullion coin or a bullion coin embedded into a plastic card for the purpose of protection. The machine contains a shell, a frame, a payment validation system, a display panel, a selection panel, a storage system, a dispensing system, a controller, a stock checking system and a security system. The machine is capable of selling gold and silver bullion coins at selling prices that are directly linked to the real time gold and silver prices traded on the commodity market. Such prices can be remotely updated via a wired or wireless connection. The security system protects the machine and functions as deterrence to potential robbers. | 11-20-2014 |
20150031509 | Weight Training Barbell System - A weight training barbell system provides modifiable barbells that facilitate the attachment of plate weights, various elastic straps, inelastic bands, handles, grips, and connectors, in a compact space saving design. The weight training barbell system incorporates various features that allow it to perform specialized exercises that provide same or greater intensity from a workout using lower weights. The weight training barbell system accomplishes this through the use of specialized components that permit a user to redistribute weight along the length of the bar and components that add resistance, in more than one direction, while lifting the bar. The weight training barbell system can be utilized to perform compression lifting exercises, offset lifting exercises, and self spotting exercises. | 01-29-2015 |