Patent application number | Description | Published |
20090026496 | METHODS OF MAKING SUBSTITUTIONALLY CARBON-DOPED CRYSTALLINE SI-CONTAINING MATERIALS BY CHEMICAL VAPOR DEPOSITION - Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition. | 01-29-2009 |
20090075029 | STRESSOR FOR ENGINEERED STRAIN ON CHANNEL - A semiconductor substrate having recesses filled with heteroepitaxial silicon-containing material with different portions having different impurity concentrations. Strained layers can fill recessed source/drain regions in a graded, bottom-up fashion. Layers can also line recess sidewalls with one concentration of strain-inducing impurity and fill the remainder to the recess with a lower concentration of the impurity. In the latter case, the sidewall liner can be tapered. | 03-19-2009 |
20090111246 | INHIBITORS FOR SELECTIVE DEPOSITION OF SILICON CONTAINING FILMS - A method for depositing a single crystalline silicon film comprises: providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source for decelerating reactions between the silicon precursor and the chlorine-containing etchant; and selectively depositing a doped crystalline Si-containing film onto the substrate. | 04-30-2009 |
20090117717 | METHODS OF SELECTIVELY DEPOSITING SILICON-CONTAINING FILMS - An embodiment provides a method for selectively depositing a single crystalline film. The method includes providing a substrate, which includes a first surface having a first surface morphology and a second surface having a second surface morphology different from the first surface morphology. A silicon precursor and BCl | 05-07-2009 |
20090189185 | EPITAXIAL GROWTH OF RELAXED SILICON GERMANIUM LAYERS - A relaxed silicon germanium structure comprises a silicon buffer layer produced using a chemical vapor deposition process with an operational pressure greater than approximately 1 torr. The relaxed silicon germanium structure further comprises a silicon germanium layer deposited over the silicon buffer layer. The silicon germanium layer has less than about 10 threading dislocations per square centimeter. By depositing the silicon buffer layer at a reduced deposition rate, the overlying silicon germanium layer can be provided with a “crosshatch free” surface. | 07-30-2009 |
20120211870 | III-V SEMICONDUCTOR STRUCTURES WITH DIMINISHED PIT DEFECTS AND METHODS FOR FORMING THE SAME - Embodiments relate to semiconductor structures and methods of forming them. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. An In-III-V semiconductor layer is grown with an Indium concentration above a saturation regime by adjusting growth conditions such as a temperature of a growth surface to create a super-saturation regime wherein the In-III-V semiconductor layer will grow with a diminished density of V-pits relative to the saturation regime. | 08-23-2012 |
20120225539 | DEPOSITION METHODS FOR THE FORMATION OF III/V SEMICONDUCTOR MATERIALS, AND RELATED STRUCTURES - Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one or more Group III precursors in the chamber. Due at least in part to the relatively high ratio, the layer of ternary III-nitride material may be grown to a high final thickness with small V-pit defects therein. Semiconductor structures including such ternary III-nitride material layers are fabricated using such methods. | 09-06-2012 |
20130153961 | IN-SITU PRE-CLEAN PRIOR TO EPITAXY - Methods for low temperature cleaning of a semiconductor surface prior to in-situ deposition have high throughput and consume very little of the thermal budget. GeH | 06-20-2013 |
20140217419 | SEMICONDUCTOR STRUCTURES INCLUDING STACKS OF INDIUM GALLIUM NITRIDE LAYERS - Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one or more Group III precursors in the chamber. Due at least in part to the relatively high ratio, a layer of ternary III-nitride material may be grown to a high final thickness with small V-pit defects therein. Semiconductor structures including such ternary III-nitride material layers are fabricated using such methods. | 08-07-2014 |