Patent application number | Description | Published |
20080318366 | METHOD FOR PRODUCING A SUPPORT FOR THE GROWTH OF LOCALISED ELONGATED NANOSTRUCTURES - The invention relates to a method for producing a support comprising nanoparticles ( | 12-25-2008 |
20090221447 | NANOSTRUCTURED DEVICE - The invention concerns a nanostructured device ( | 09-03-2009 |
20090243048 | METALLIC NANOCRYSTAL ENCAPSULATION - A method of forming a device includes forming protective shells about metallic nanocrystals supported by a substrate. The metallic nanocrystals having protective shells are encapsulated with a layer formed with process parameters that are not compatible with the integrity of unprotected metallic nanocrystals. | 10-01-2009 |
20090246510 | METALLIC NANOCRYSTAL PATTERNING - A device and method include forming a mask on a substrate supporting a plurality of metallic nanocrystals such that a portion of the metallic nanocrystals is exposed. Protective shells are formed about the exposed metallic nanocrystals. Unprotected metallic nanocrystals are removed. | 10-01-2009 |
20120288985 | METHOD FOR PRODUCING A PHOTOVOLTAIC CELL INCLUDING THE PREPARATION OF THE SURFACE OF A CRYSTALLINE SILICON SUBSTRATE - A method for producing of at least one photovoltaic cell includes successively the anisotropic etching of a surface of a crystalline silicon substrate and the isotropic etching treatment of said surface. The isotropic etching treatment includes at least two successive operations respectively consisting in forming a silicon oxide thin film with a controlled average thickness, ranging between 10 nm and 500 nm and in removing said thin film thus-formed. The operation consisting in forming a silicon oxide thin film on the face of the substrate is carried out by a thermally activated dry oxidation. Such a method makes it possible to improve the surface quality of the surface of the substrate once said surface is etched in an anisotropic way. | 11-15-2012 |
20120291861 | PHOTOVOLTAIC CELL, INCLUDING A CRYSTALLINE SILICON OXIDE PASSIVATION THIN FILM, AND METHOD FOR PRODUCING SAME - A heterojunction photovoltaic cell includes at least one crystalline silicon oxide film directly placed onto one of the front or rear faces of a crystalline silicon substrate, between said substrate and a layer of amorphous or microcrystalline silicon. The thin film is intended to enable the passivation of said face of the substrate. The thin film is more particularly obtained by radically oxidizing a surface portion of the substrate, before depositing the layer of amorphous silicon. Moreover, a thin layer of intrinsic or microdoped amorphous silicon can be placed between said think film and the layer of amorphous or microcrystalline silicon. | 11-22-2012 |
20150214392 | PHOTOVOLTAIC CELL HAVING A HETEROJUNCTION AND METHOD FOR MANUFACTURING SUCH A CELL - The invention relates to a photovoltaic cell having a heterojunction, including a doped substrate ( | 07-30-2015 |