Patent application number | Description | Published |
20080286751 | Dispensing Device For Microfluidic Droplets Especially For Cytometry - The invention relates to a dispensing device for droplets comprising a first channel ( | 11-20-2008 |
20100006441 | APPARATUS FOR MANIPULATING, MODIFYING AND CHARACTERIZING PARTICLES IN A MICRO CHANNEL - Microfluidic system comprising a space for containing a liquid and at least one lateral chamber in communication with said space, said lateral chamber containing a metal electrode. The lateral chamber and the space are designed to be filled by the same or different liquid when the system is active. | 01-14-2010 |
20110217804 | THERMALLY ACTIVATED MICROMIRROR AND FABRICATION METHOD - A method for fabricating a micromirror in a wafer, including the steps of: depositing and etching layers forming two arms; etching the wafer such that in the back face only a thin portion of the wafer remains in the region of formation of the micromirror and the arms; performing an anisotropic etch, such that the thin portion remains only in the areas of the micromirror and the arms; and performing an isotropic etch to remove the thin portions under the arms, the etching step for forming the arms being performed following their shape and so as to form holes traversing the arms, the holes being positioned at edges of the region separating the micromirror and the wafer on both the side of the micromirror and the side of the portions of the wafer remaining after the anisotropic etching step. The invention also concerns the micromirror. | 09-08-2011 |
20110295350 | APPARATUS AND METHOD FOR OPTIMIZED STIMULATION OF A NEUROLOGICAL TARGET - A preferred frequency is identified, being usable to stimulate a neurological target within a mammalian body using at least one microelectrode positioned at or near the target. To establish efficient and effective stimulation, an impedance analyzer is provided for measuring electrical impedance values indicative of a microelectrode-tissue interface across a range of different frequencies. A preferred one of the measured electrical impedance values is identified as being closest to a pure resistance. The neurological target can then be stimulated at or near the frequency associated with the preferred impedance value (peak resistance frequency), thereby promoting desirable traits, such as optimum charge transfer, minimum signal distortion, increased stimulation efficiency, and prevention of microelectrode corrosion. The peak resistance frequency can be used to determine an preferred pulse shape. A target can be identified by microelectrode measurements of neuronal activity and/or impedance magnitude at peak resistance frequency. | 12-01-2011 |
20110301665 | MICROFABRICATED NEUROSTIMULATION DEVICE - Described herein are microelectrode array devices, and methods of fabrication and use of the same, to provide highly localized and efficient electrical stimulation of a neurological target. The device includes multiple microelectrode elements arranged along an elongated probe shaft. The microelectrode elements are dimensioned and shaped so as to target individual neurons, groups of neurons, and neural tissue as may be located in an animal nervous system, such as deep within a human brain. Beneficially, the neurological probe can be used to facilitate location of the neurological target and remain implanted for long-term monitoring and/or stimulation. | 12-08-2011 |
20120277834 | MICROFABRICATED SURFACE NEUROSTIMULATION DEVICE AND METHODS OF MAKING AND USING THE SAME - Described herein are microelectrode array devices, and methods of fabrication and use of the same, to provide highly localized and efficient electrical stimulation of a neurological target. The device includes multiple microelectrode elements arranged along an supportive backing layer. The microelectrode elements are dimensioned and shaped so as to target individual neurons, groups of neurons, and neural tissue as may be located in an animal nervous system, such as along a region of a cortex of a human brain. Beneficially, the neurological probe can be used to facilitate location of the neurological target and remain implanted for long-term monitoring and/or stimulation. | 11-01-2012 |
20130085361 | DEVICE FOR INTERACTING WITH NEUROLOGICAL TISSUE AND METHODS OF MAKING AND USING THE SAME - Described herein are microelectrode array devices, and methods of fabrication, assembly and use of the same, to provide highly localized neural recording and/or neural stimulation to a neurological target. The device includes multiple microelectrode elements arranged protruding shafts. The protruding shafts are enclosed within an elongated probe shaft, and can be expanded from their enclosure. The microelectrode elements, and elongated probe shafts, are dimensioned in order to target small volumes of neurons located within the nervous system, such as in the deep brain region. Beneficially, the probe can be used to quickly identify the location of a neurological target, and remain implanted for long-term monitoring and/or stimulation. | 04-04-2013 |
20140277258 | MICROFABRICATED SURFACE NEUROSTIMULATION DEVICE AND METHODS OF MAKING AND USING THE SAME - Described herein are microelectrode array devices, and methods of fabrication and use of the same, to provide highly localized and efficient electrical stimulation of a neurological target. The device includes multiple microelectrode elements arranged along an supportive backing layer. The microelectrode elements are dimensioned and shaped so as to target individual neurons, groups of neurons, and neural tissue as may be located in an animal nervous system, such as along a region of a cortex of a human brain. Beneficially, the neurological probe can be used to facilitate location of the neurological target and remain implanted for long-term monitoring and/or stimulation. | 09-18-2014 |
20140303703 | MICROFABRICATED NEUROSTIMULATION DEVICE - Described herein are microelectrode array devices, and methods of fabrication and use of the same, to provide highly localized and efficient electrical stimulation of a neurological target. The device includes multiple microelectrode elements arranged along an elongated probe shaft. The microelectrode elements are dimensioned and shaped so as to target individual neurons, groups of neurons, and neural tissue as may be located in an animal nervous system, such as deep within a human brain. Beneficially, the neurological probe can be used to facilitate location of the neurological target and remain implanted for long-term monitoring and/or stimulation. | 10-09-2014 |
20140309714 | APPARATUS AND METHOD FOR OPTIMIZED STIMULATION OF A NEUROLOGICAL TARGET - A preferred frequency is identified, being usable to stimulate a neurological target within a mammalian body using at least one microelectrode positioned at or near the target. To establish efficient and effective stimulation, an impedance analyzer is provided for measuring electrical impedance values indicative of a microelectrode-tissue interface across a range of different frequencies. A preferred one of the measured electrical impedance values is identified as being closest to a pure resistance. The neurological target can then be stimulated at or near the frequency associated with the preferred impedance value (peak resistance frequency), thereby promoting desirable traits, such as optimum charge transfer, minimum signal distortion, increased stimulation efficiency, and prevention of microelectrode corrosion. The peak resistance frequency can be used to determine an preferred pulse shape. A target can be identified by microelectrode measurements of neuronal activity and/or impedance magnitude at peak resistance frequency. | 10-16-2014 |
20150037262 | DEVICE FOR THE TRANSPLANTATION OF CELLS IN SUSPENSION - The invention relates to a device ( | 02-05-2015 |
Patent application number | Description | Published |
20080229742 | Extended Leading-Edge Compressor Wheel - A turbocharger system having a compressor housing containing a rotating compressor wheel with a plurality of main blades that define an impeller passageway from an inducer to an exducer. Each main blade has a leading edge characterized by an extension forming a non-planar, conical inducer leading edge, and a trailing edge characterized by a reverse-clip-extension forming a non-cylindrical, conical exducer trailing edge. | 09-25-2008 |
20090064678 | MULTIPLE-TURBOCHARGER SYSTEM, AND EXHAUST GAS FLOW CONTROL VALVE THEREFOR - A multiple-turbocharger system for an internal combustion engine includes a first turbocharger comprising a first compressor driven by a first turbine, the first turbine operable to be driven by exhaust gas from the engine; a second turbocharger comprising a second compressor driven by a second turbine, the second turbine operable to be driven by exhaust gas from the engine; a first conduit arranged for supplying exhaust gas from the engine to the first turbine, and a second conduit arranged for supplying exhaust gas from the engine to the second turbine; and a valve coupled with the second conduit and switchable between an open condition allowing exhaust gas flow from the second conduit to the second turbine, and a closed condition substantially preventing exhaust gas flow from the second conduit to the second turbine but allowing a leakage flow to the second turbine sufficient to keep the second turbine rotating. | 03-12-2009 |
20120304952 | VALVE SEAT AND GASKET FOR EXHAUST BYPASS VALVE - An assembly can include a valve seat for an exhaust bypass valve of a serial turbocharger system where the valve seat includes a base portion and a wall portion that extends axially away from the base portion; and a gasket that includes a planar portion that defines a perimeter and a socket disposed interior to the perimeter, where the socket includes a valve seat surface axially recessed from the planar portion and configured to position the seat. In various examples, the valve seat is positioned in the socket of the gasket and fixed to the gasket. Various other examples of devices, assemblies, systems, methods, etc., are also disclosed. | 12-06-2012 |
Patent application number | Description | Published |
20110278598 | SEMICONDUCTOR STRUCTURE, AN INTEGRATED CIRCUIT INCLUDING A SEMICONDUCTOR STRUCTURE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE - A monolithic semiconductor structure includes a stack of layers. The stack includes a substrate; a first layer made from a first semiconductor material; and a second layer made from a second semiconductor material. The first layer is situated between the substrate and the second layer and at least one of the first semiconductor material and the second semiconductor material contains a III-nitride material. The structure includes a power transistor, including a body formed in the stack of layers; a first power terminal at a side of the first layer facing the second layer; a second power terminal at least partly formed in the substrate; and a gate structure for controlling the propagation through the body of electric signals between the first power terminal and the second power terminal. The structure further includes a vertical Schottky diode, including: an anode; a cathode including the substrate, and a Schottky barrier between the cathode and the anode, the Schottky barrier being situated between the substrate and a anode layer in the stack of layers. | 11-17-2011 |
20120217511 | VERTICAL POWER TRANSISTOR DEVICE, SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING A VERTICAL POWER TRANSISTOR DEVICE - A vertical power transistor device comprises: a substrate formed from a III-V semiconductor material and a multi-layer stack at least partially accommodated in the substrate. The multi-layer stack comprises: a semi-insulating layer disposed adjacent the substrate and a first layer formed from a first III-V semiconductor material and disposed adjacent the semi-insulating layer. The multi-layer stack also comprises a second layer formed from a second III-V semiconductor material disposed adjacent the first layer and a heterojunction is formed at an interface of the first and second layers. | 08-30-2012 |
20120217512 | LATERAL POWER TRANSISTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A lateral power transistor device comprises a substrate and a multi-layer mesa structure comprising a heterojunction. A filled trench region is located adjacent the multi-layer mesa structure, the filled trench region being occupied by a metal. | 08-30-2012 |
20130175671 | METHODS FOR PROCESSING A SEMICONDUCTOR WAFER, A SEMICONDUCTOR WAFER AND A SEMICONDUCTOR DEVICE - A semiconductor wafer, comprising multiple active areas suitable for providing semiconductor devices or circuits. Inactive areas separate the active areas from each other. The wafer has a stressed layer with a first surface, and another layer which is in contact with the stressed layer along a second surface of the stressed layer, opposite to the first surface. Multiple trench lines, extend in parallel to the first surface of the stressed layer in an inactive area and have a depth less than the thickness of the semiconductor wafer. | 07-11-2013 |
20140334053 | OVER-CURRENT PROTECTION DEVICE - An over-current protection circuit including, a current supply switch with a first terminal coupled to a supply current input and with a second terminal coupled to a supply current output. The current supply switch is switchable at least between an on-state, in which the current supply switch provides a conductive connection between the first terminal and the second terminal, and an off-state, in which the current supply switch interrupts the conductive connection between the first terminal and the second terminal. The over-current protection circuit receives a supply current via the supply current input and provides the supply current via the supply current output if the switch is in the on-state. The current supply switch includes High Electron Mobility Transistor. | 11-13-2014 |