Patent application number | Description | Published |
20100142580 | LASER DEVICE WITH COUPLED LASER SOURCE AND WAVEGUIDE - Laser device comprising:
| 06-10-2010 |
20100193766 | Process for Producing a PN Homojunction in a Nanostructure - The invention relates to a process for producing a p-n junction in a nanostructure, in which the nanostructure has one or more nanoconstituents made of a semiconductor material with a single type of doping having one conductivity type, characterized in that it includes a step consisting in forming a dielectric element ( | 08-05-2010 |
20110180776 | OPTOELECTRONIC DEVICE BASED ON NANOWIRES AND CORRESPONDING PROCESSES - The invention relates to a method for making optoelectronic devices comprising nanowire semiconductors, in which: the nanowires ( | 07-28-2011 |
20120164767 | METHOD OF MANUFACTURING A LIGHT EMISSION DEVICE BASED ON LIGHT EMITTING DIODES - A method of manufacturing a device based on LEDs includes the growth of semiconducting nanowires on a first electrode produced on an insulating face, and encapsulation thereof in planarising material; the formation, on the planarising material, of a second electrode with contact take-up areas. LEDs are formed by releasing a band of the first electrode around each take-up area, including forming a mask defining the bands on the second electrode, chemically etching the planarising material, stopped so as to preserve planarising material, chemically etching the portion of nanowires thus released, and then chemically etching the remaining planarising material. A trench is formed along each of the bands as far as the insulating face and the LEDs are placed in series by connecting the take-up areas and bands of the first electrode. | 06-28-2012 |
20130112945 | NANOWIRE-BASED OPTOELECTRONIC DEVICE FOR LIGHT EMISSION - An optoelectronic device includes:
| 05-09-2013 |
20130140521 | OPTOELECTRONIC DEVICE INCLUDING NANOWIRES WITH A CORE/SHELL STRUCTURE - Optoelectronic device including light-emitting means in the form of nanowires ( | 06-06-2013 |
20140077156 | IN-SERIES ELECTRICAL CONNECTION OF LIGHT-EMITTING NANOWIRES - An optoelectronic device includes at least first and second light-emitting nanowires on a support, each comprising an area for the injection of holes and an area for the injection of electrons, a series electric connection including a connection nanowire on the support, which includes a first region forming an electric path with the hole injection area of the first nanowire, a second region forming an electric path with the electron injection area of the second nanowire, and a third region enabling a current to flow between first and second regions. Also included are a first conductive area connecting the hole injection area of the first nanowire and the first region of the connection nanowire and electrically insulated from the second nanowire, and a second conductive area connecting the second region of the connection nanowire and electron injection area of the second nanowire and electrically insulated from the first nanowire. | 03-20-2014 |
20140327037 | METHOD FOR MANUFACTURING A SEMICONDUCTOR MICRO- OR NANO-WIRE, SEMICONDUCTOR STRUCTURE COMPRISING SUCH A MICRO- OR NANO-WIRE, AND METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE - A method of manufacturing at least one semiconducting micro- or nano-wire used for formation of an optoelectric structure, optoelectronic structures including the micro- or nano-wires, and a method enabling manufacture of the photoelectronic structures. The method includes providing a semiconducting substrate, forming a crystalline buffer layer on the substrate, the buffer layer having a first zone over at least part of its thickness composed mainly of magnesium nitride in a form Mg | 11-06-2014 |