Patent application number | Description | Published |
20080220597 | Photoresists and methods for use thereof - New photoresists are provided that can be applied and imaged with reduced undesired outgassing and/or as thick coating layers. Preferred resists of the invention are chemically-amplified positive-acting resists that contain photoactive and resin components. | 09-11-2008 |
20120088188 | UNDERLAYER COMPOSITION AND METHOD OF IMAGING UNDERLAYER COMPOSITION - A method of forming a pattern comprises diffusing an acid formed by irradiating a portion of a photosensitive layer, into an underlayer comprising an acid sensitive copolymer having acid decomposable groups and attachment groups covalently bonded to the surface of the substrate and/or forming an interpolymer crosslink. Diffusing comprises heating the underlayer and photosensitive layer. The acid sensitive group reacts with the diffused acid to form a polar region on the underlayer, with the shape of the pattern. The photosensitive layer is removed, forming a self-assembling layer comprising a block copolymer having a first block with an affinity for the polar region, and a second block having less affinity for the polar region. The first block forms a domain aligned to the polar region, and the second block forms another domain aligned to the first. Removing either domain exposes a portion of the underlayer. | 04-12-2012 |
20120088192 | UNDERLAYER COMPOSITION AND METHOD OF IMAGING UNDERLAYER - A method of forming a pattern comprises diffusing an acid, generated by irradiating a portion of a photosensitive layer, into an underlayer comprising an acid sensitive copolymer comprising an acid decomposable group and an attachment group, to form an interpolymer crosslink and/or covalently bonded to the surface of the substrate. Diffusing comprises heating the underlayer and photosensitive layer. The acid sensitive group reacts with the diffused acid to form a polar region at the surface, in the shape of the pattern. The photosensitive layer is removed to forming a self-assembling layer comprising a block copolymer having a block with an affinity for the polar region, and a block having less affinity than the first. The first block forms a domain aligned to the polar region, and the second block forms a domain aligned to the first. Removing either the first or second domain exposes a portion of the underlayer. | 04-12-2012 |
20130209344 | Thermal annealing process - A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(dimethylsiloxane) block copolymer component to a surface of the substrate; optionally, baking the film; subjecting the film to a high temperature annealing process under particularized atmospheric conditions for a specified period of time; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(dimethylsiloxane) in the annealed film to SiO | 08-15-2013 |
20130209693 | Block copolymer and methods relating thereto - A copolymer composition including a block copolymer having a poly(methyl methacrylate) block and a poly((trimethylsilyl)methyl methacrylate) block is provided; wherein the block copolymer exhibits a number average molecular weight, M | 08-15-2013 |
20130209694 | Blended block copolymer composition - A block copolymer composition containing a diblock copolymer blend including a first poly(methyl methacrylate)-b-poly((trimethylsilyl)methyl methacrylate) diblock copolymer; and, a second poly(methyl methacrylate)-b-poly((trimethylsilyl)methyl methacrylate) diblock copolymer. Also provided are substrates treated with the block copolymer composition. | 08-15-2013 |
20130337179 | METAL HARDMASK COMPOSITIONS - The invention provides a composition comprising at least the following A and B:
| 12-19-2013 |
20140014001 | Thermal annealing process - A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(siloxane) block copolymer component; and, an antioxidant to a surface of the substrate; optionally, baking the film; annealing the film in a gaseous atmosphere containing ≧20 wt % oxygen; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiO | 01-16-2014 |
20140014002 | High temperature thermal annealing process - A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(siloxane) block copolymer component; and, an antioxidant to a surface of the substrate; optionally, baking the film; subjecting the film to a high temperature annealing process under a gaseous atmosphere for a specified period of time; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiO | 01-16-2014 |
20140027954 | Method of manufacturing high aspect ratio silver nanowires - A process for manufacturing silver nanowires is provided, comprising: providing a silver ink core component containing ≧60 wt % silver nanoparticles dispersed in a silver carrier; providing a shell component containing a film forming polymer dispersed in a shell carrier; providing a substrate; coelectrospinning the silver ink core component and the shell component depositing on the substrate a core shell fiber having a core and a shell surrounding the core, wherein the silver nanoparticles are in the core; and, treating the silver nanoparticles to form a population of silver nanowires, wherein the population of silver nanowires exhibit an average length, L, of ≧60 μm. | 01-30-2014 |
20140061155 | Composition and method for preparing pattern on a substrate - A copolymer composition and a method of processing a substrate to form line space features thereon are provided. | 03-06-2014 |
20140065300 | Method of Manufacturing Silver Miniwire Films - A method of manufacturing a silver miniwire film is provided, wherein the film exhibits a reduced sheet resistance. | 03-06-2014 |
20140131078 | Method of Manufacturing A Patterned Transparent Conductor - Method of manufacturing patterned transparent conductor is provided, comprising: providing a silver ink core component containing silver nanoparticles dispersed in a silver carrier; providing a shell component containing a film forming polymer dispersed in a shell. carrier; providing a substrate; coelectrospinning the silver ink core component and the shell component to form a core shell fiber, wherein the silver nanoparticles are in the core; depositing the core shell fiber on the substrate; selectively treating a portion of the deposited core shell fiber to provide a patterned transparent conductor, wherein the patterned transparent conductor has a treated region and a non-treated region; wherein the treated region comprises a plurality of electrically interconnected silver miniwires and wherein the treated region is an electrically conductive region; and, wherein the non-treated region is an electrically insulative region. | 05-15-2014 |
20140179582 | METHODS AND COMPOSITIONS FOR REMOVAL OF METAL HARDMASKS - The invention provides a process for removing a film from a substrate, said process comprising applying a composition to the film, and
| 06-26-2014 |
20140264258 | MULTI-HETEROJUNCTION NANOPARTICLES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME - Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other. | 09-18-2014 |
20140264259 | MULTI-HETEROJUNCTION NANOPARTICLES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME - Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction. | 09-18-2014 |
20140290979 | Method Of Manufacturing A Patterned Transparent Conductor - Method of manufacturing patterned conductor is provided, comprising: providing a conductivised substrate, wherein the conductivised substrate comprises a substrate and an electrically conductive layer; providing an electrically conductive layer etchant; providing a spinning material; providing a masking fiber solvent; forming a plurality of masking fibers and depositing the plurality of masking fibers onto the electrically conductive layer; exposing the electrically conductive layer to the electrically conductive layer etchant, wherein the electrically conductive layer that is uncovered by the plurality of masking fibers is removed from the substrate, leaving an interconnected conductive network on the substrate covered by the plurality of masking fibers; and, exposing the plurality of masking fibers to the masking fiber solvent, wherein the plurality of masking fibers are removed to uncover the interconnected conductive network on the substrate. | 10-02-2014 |