Patent application number | Description | Published |
20100223100 | Methods and Systems for Sales Networking - Methods and systems for sales networking are provided. A user of a database system can be helped to identify relevant business opportunities from those similar to a selected opportunity. For example, a salesperson can search for similar deals to the one the person is working, contact people who have worked similar deals and ask for their advice, and bookmark those deals to refer back to them as they work the deal. The similar opportunities can be found by matching properties (such as field and related records) of an opportunity record that corresponds to the opportunity of interest. | 09-02-2010 |
20110137940 | Methods And Apparatus For Selecting Updates To Associated Records To Publish On An Information Feed In An On-Demand Database Service Environment - Disclosed are systems, apparatus, methods, and computer readable media for selecting updates to associated records to publish on an information feed in an on-demand database service environment. In one embodiment, one or more updates associated with a data record are accessed. The one or more updates are stored in a database. The data record is a parent record, and the one or more updates relate to one or more child records associated with the parent record. The one or more updates are provided as one or more candidates for publication on an information feed associated with the data record, where the information feed is capable of being displayed on a display device. A number of the candidates is selected for publication on the information feed based on one or more criteria. | 06-09-2011 |
20140019459 | Methods And Apparatus For Selecting Updates To Associated Records To Publish On An Information Feed In An On-Demand Database Service Environment - Disclosed are systems, apparatus, methods, and computer readable media for selecting updates to associated records to publish on an information feed in an on-demand database service environment. In one embodiment, one or more updates associated with a data record are stored in a database. One or more criteria are applied to the one or more updates to generate a score associated with each update. The score is compared with a designated threshold. When the score is identified as meeting or exceeding the designated threshold, the one or more updates are provided as one or more candidates for publication on an information feed associated with the data record, where the information feed is capable of being displayed on a display device. | 01-16-2014 |
Patent application number | Description | Published |
20110113057 | SUBSCRIPTIONS FOR ENTERPRISE LEVEL BUSINESS INFORMATION NETWORKING - Systems, apparatus, and methods for implementing enterprise level social and business information networking are provided. Users can receive relevant information about a database system and its users at an appropriate time. Users can then use this relevant information to reduce errors and limit redundant efforts. For example, an update of a record in the database can be identified, and a story created automatically about the update and sent to the users that are following the record. Which updates have stories created and which stories are to be sent to which users can be configured. Other events besides updating of records can also be tracked. For example, actions of a user that result in an event can be tracked, where such tracking can also be configurable. Subscriptions to follow an object can be automatic, and access checks can be used to ensure that unauthorized users do not see certain data. | 05-12-2011 |
20110113058 | IMPLEMENTING ENTERPRISE LEVEL BUSINESS INFORMATION NETWORKING - Systems, apparatus, and methods for implementing enterprise level social and business information networking are provided. Users can receive relevant information about a database system and its users at an appropriate time. Users can then use this relevant information to reduce errors and limit redundant efforts. For example, an update of a record in the database can be identified, and a story created automatically about the update and sent to the users that are following the record. Which updates have stories created and which stories are to be sent to which users can be configured. Other events besides updating of records can also be tracked. For example, actions of a user that result in an event can be tracked, where such tracking can also be configurable. Subscriptions to follow an object can be automatic, and access checks can be used to ensure that unauthorized users do not see certain data. | 05-12-2011 |
20110113059 | SECURITY IN ENTERPRISE LEVEL BUSINESS INFORMATION NETWORKING - Systems, apparatus, and methods for implementing enterprise level social and business information networking are provided. Users can receive relevant information about a database system and its users at an appropriate time. Users can then use this relevant information to reduce errors and limit redundant efforts. For example, an update of a record in the database can be identified, and a story created automatically about the update and sent to the users that are following the record. Which updates have stories created and which stories are to be sent to which users can be configured. Other events besides updating of records can also be tracked. For example, actions of a user that result in an event can be tracked, where such tracking can also be configurable. Subscriptions to follow an object can be automatic, and access checks can be used to ensure that unauthorized users do not see certain data. | 05-12-2011 |
20110113071 | ENTERPRISE LEVEL BUSINESS INFORMATION NETWORKING FOR CHANGES IN A DATABASE - Systems, apparatus, and methods for implementing enterprise level social and business information networking are provided. Users can receive relevant information about a database system and its users at an appropriate time. Users can then use this relevant information to reduce errors and limit redundant efforts. For example, an update of a record in the database can be identified, and a story created automatically about the update and sent to the users that are following the record. Which updates have stories created and which stories are to be sent to which users can be configured. Other events besides updating of records can also be tracked. For example, actions of a user that result in an event can be tracked, where such tracking can also be configurable. Subscriptions to follow an object can be automatic, and access checks can be used to ensure that unauthorized users do not see certain data. | 05-12-2011 |
20110113072 | CUSTOMIZING ENTERPRISE LEVEL BUSINESS INFORMATION NETWORKING - Systems, apparatus, and methods for implementing enterprise level social and business information networking are provided. Users can receive relevant information about a database system and its users at an appropriate time. Users can then use this relevant information to reduce errors and limit redundant efforts. For example, an update of a record in the database can be identified, and a story created automatically about the update and sent to the users that are following the record. Which updates have stories created and which stories are to be sent to which users can be configured. Other events besides updating of records can also be tracked. For example, actions of a user that result in an event can be tracked, where such tracking can also be configurable. Subscriptions to follow an object can be automatic, and access checks can be used to ensure that unauthorized users do not see certain data. | 05-12-2011 |
20140214829 | IMPLEMENTING ENTERPRISE LEVEL BUSINESS INFORMATION NETWORKING - Systems, apparatus, and methods for implementing enterprise level social and business information networking are provided. Users can receive relevant information about a database system and its users at an appropriate time. Users can then use this relevant information to reduce errors and limit redundant efforts. For example, an update of a record in the database can be identified, and a story created automatically about the update and sent to the users that are following the record. Which updates have stories created and which stories are to be sent to which users can be configured. Other events besides updating of records can also be tracked. For example, actions of a user that result in an event can be tracked, where such tracking can also be configurable. Subscriptions to follow an object can be automatic, and access checks can be used to ensure that unauthorized users do not see certain data. | 07-31-2014 |
Patent application number | Description | Published |
20110140773 | Circuits and Methods for Calibrating Offset in an Amplifier - In one embodiment, the present disclosure includes a circuit comprising an amplifier having an input and an output, an offset detection circuit to detect an offset of the amplifier at the output of the amplifier, and an offset generation circuit having an input coupled to the offset detection circuit and an output coupled to the input of the amplifier to generate an offset at the input of the amplifier during an operational phase of the amplifier based on the detected offset. The generated offset cancels a least a portion of the offset of the amplifier. In one implementation, the amplifier is a sense amplifier in a memory. | 06-16-2011 |
20130182491 | SYSTEM AND METHOD FOR MODIFYING ACTIVATION OF A SENSE AMPLIFIER - Systems, methods, and other embodiments associated with controlling a sense amplifier in a memory device are described. According to one embodiment, an apparatus includes a signal generator configured to generate a sense enable signal that activates a sense amplifier of a memory cell in a memory device. The apparatus includes a dummy memory cell connected to a current mirror circuit that is configured to detect a timing variation in the dummy memory cell from a predefined timing and to alter a timing of the sense enable signal based, at least in part, on the timing variation. The apparatus also includes a controller configured to modify the timing of the sense enable signal by selectively enabling one or more of a plurality of semiconductor gates in the current mirror circuit. The plurality of semiconductor gates are connected in parallel. | 07-18-2013 |
20130294179 | CIRCUITS AND METHODS FOR CALIBRATING OFFSET IN AN AMPLIFIER - In one embodiment, the present disclosure includes a circuit comprising an amplifier having an input and an output, an offset detection circuit to detect an offset of the amplifier at the output of the amplifier, and an offset generation circuit having an input coupled to the offset detection circuit and an output coupled to the input of the amplifier to generate an offset at the input of the amplifier during an operational phase of the amplifier based on the detected offset. The generated offset cancels a least a portion of the offset of the amplifier. In one implementation, the amplifier is a sense amplifier in a memory. | 11-07-2013 |
20140104924 | APPARATUS AND METHOD FOR REPAIRING RESISTIVE MEMORIES AND INCREASING OVERALL READ SENSITIVITY OF SENSE AMPLIFIERS - A memory includes a module and a demultiplexer. The module is configured to monitor outputs of sense amplifiers. Each of the outputs of the sense amplifiers is configured to be in a first state or a second state. The module is configured to determine that two or more of the outputs of the sense amplifiers are in a same state. The same state is the first state or the second state. The module is configured to output the state of the two or more outputs of the sense amplifiers. The demultiplexer is configured to provide the state of the two or more outputs of the sense amplifiers to a latch. | 04-17-2014 |
20140104926 | SYSTEMS AND METHODS FOR READING RESISTIVE RANDOM ACCESS MEMORY (RRAM) CELLS - A system including a resistive random access memory cell connected to a word line and a bit line and a pre-charge circuit configured to pre-charge the bit line to a first voltage with the word line being unselected. A driver circuit selects the word line at a first time subsequent to the bit line being charged to the first voltage. A comparator compares a second voltage on the bit line to a third voltage supplied to the comparator and generates an output based on the comparison. A latch latches the output of the comparator and generates a latched output. A pulse generator generates a pulse after a delay subsequent to the first time to clock the latch to latch the output of the comparator and generate the latched output. The latched output indicates a state of the resistive random access memory cell. | 04-17-2014 |
20140104927 | CONFIGURING RESISTIVE RANDOM ACCESS MEMORY (RRAM) ARRAY FOR WRITE OPERATIONS - A system includes a resistive random access memory cell and a driver circuit. The resistive random access memory cell includes a resistive element and a switching element, and has a first terminal connected to a bit line and a second terminal connected to a word line. The driver circuit is configured to apply, in response to selection of the resistive random access memory cell using the word line, a first voltage of a first polarity to the bit line to program the resistive random access memory cell to a first state by causing current to flow through the resistive element in a first direction, and a second voltage of a second polarity to the bit line to program the resistive random access memory cell to a second state by causing current to flow through the resistive element in a second direction. | 04-17-2014 |
20140104928 | METHOD AND APPARATUS FOR FORMING A CONTACT IN A CELL OF A RESISTIVE RANDOM ACCESS MEMORY TO REDUCE A VOLTAGE REQUIRED TO PROGRAM THE CELL - A cell of a resistive random access memory including a resistive element and an access device. The resistive element includes (i) a first electrode and (ii) a second electrode. The access device is configured to select and deselect the cell. The access device includes (i) a first terminal connected to a first contact and (i) a second terminal connected to a second contact. The second contact is connected to the second electrode of the resistive element via a third contact. The third contact includes (i) a first surface in contact with the second contact and (ii) a second surface in contact with the second electrode. The first surface defines a first surface area, and the second surface defines a second surface area. The first surface area is greater than the second surface area. | 04-17-2014 |
20140112057 | APPARATUS AND METHOD FOR REFORMING RESISTIVE MEMORY CELLS - A memory includes an array of memory cells, a first module and a second module. The first module is configured to compare a first state of a memory cell with a reference. The memory cell is in the array of memory cells. The second module is configured to, subsequent to a read cycle or a write cycle of the memory cell and based on the comparison, reform the memory cell to adjust a difference between the first state and a second state of the memory cell. | 04-24-2014 |
20140119103 | SRAM Cells Suitable for Fin Field-Effect Transistor (FinFET) Process - A static random access memory (SRAM) cell includes first and second n-channel transistors, first and second p-channel transistors, first and second enable transistors, and first and second pass gates. The first n-channel transistor, the first p-channel transistor, and the first enable transistor are connected in series between first and second reference potentials. The second n-channel transistor, the second p-channel transistor, and the second enable transistor are connected in series between the first and second reference potentials. The first pass gate is configured to selectively connect a first bitline to a first node. The first node is connected to a gate of the first n-channel transistor and a gate of the first p-channel transistor. The second pass gate is configured to selectively connect a second bitline to a second node. The second node is connected to a gate of the second n-channel transistor and a gate of the second p-channel transistor. | 05-01-2014 |
20140133217 | CONCURRENT USE OF SRAM CELLS WITH BOTH NMOS AND PMOS PASS GATES IN A MEMORY SYSTEM - A memory system includes first memory cells and second memory cells. Each of the first memory cells includes first and second pass gates including NMOS transistors. Each of the second memory cells include first and second pass gates including PMOS transistors. The first memory cells are pre-charged by one polarity of a voltage supply. The second memory cells are pre-charged by an opposite polarity of the voltage supply. | 05-15-2014 |
20140170832 | RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR CONTROLLING MANUFACTURING OF CORRESPONDING SUB-RESOLUTION FEATURES OF CONDUCTIVE AND RESISTIVE ELEMENTS - A method including: forming a stack of resistive layers; prior to or subsequent to forming the stack of resistive layers, forming a conductive layer; applying a mask layer on the stack of resistive layers or the conductive layer; forming a first spacer on the mask layer; and etching away a first portion of the mask layer using the first spacer as a first mask to provide a remainder. The method further includes: forming a second spacer on the stack of the resistive layers or the conductive layer and the remainder of the mask layer; etching away a second portion of the remainder of the mask layer to form an island; and using the island as a second mask, etching the stack of the resistive layers to form a resistive element of a memory, and etching the conductive layer to form a conductive element of the memory. | 06-19-2014 |
20150063004 | METHOD AND APPARATUS FOR REFORMING A MEMORY CELL OF A MEMORY - A memory including a memory cell and first and second modules. The memory cell has first and second states, where the second state is different than the first state. The first module, subsequent to an initial forming of the memory cell and subsequent to a read cycle or a write cycle of the memory cell, determines a first difference between the first state and a first predetermined threshold or a second difference between the first state and the second state. The second module, subsequent to the first module determining the first difference or the second difference, reforms the memory cell to reset and increase the first difference or the second difference. The second module, during the reforming of the memory cell, applies a first voltage to the memory cell. The first voltage is greater than a voltage applied to the memory cell during the read cycle or the write cycle. | 03-05-2015 |
20150124520 | RESISTIVE RANDOM ACCESS MEMORY CELL STRUCTURE WITH REDUCED PROGRAMMING VOLTAGE - A cell of a resistive random access memory including (i) a resistive element and (ii) a switch. The resistive element includes (i) a first electrode, and (ii) a second electrode. The switch includes (i) a first terminal connected to a first contact, and (i) a second terminal connected to a second contact. The second contact is connected to the second electrode of the resistive element via a third contact. The third contact has a shape including a first surface and a second surface that is opposite to the first surface. The shape of the third contact tapers inward from the first surface towards the second surface. | 05-07-2015 |
20150194207 | METHOD AND APPARATUS FOR SCREENING MEMORY CELLS FOR DISTURB FAILURES - Embodiments include a method comprising: receiving a first voltage; and while testing a memory cell: modifying the first voltage to generate a second voltage that is different from the first voltage; and performing a first read operation on the memory cell, based on applying (i) the second voltage to an array of transistors of the memory cell and (ii) the first voltage to the memory cell. | 07-09-2015 |
20160087201 | RESISTIVE RANDOM ACCESS MEMORY CELL STRUCTURE - A system including a resistive element of a memory cell and a device to access the resistive element of the memory cell. The resistive element includes (i) a first electrode, and (ii) a second electrode. The device includes (i) a first terminal connected to a first contact, and (i) a second terminal connected to a second contact. One or more of the first contact and the second contact of the device is respectively connected to one or more of the first electrode and the second electrode of the resistive element via a third contact. A size of the third contact decreases from the one or more of the first contact and the second contact of the device to the one or more of the first electrode and the second electrode of the resistive element of the memory cell. | 03-24-2016 |