Patent application number | Description | Published |
20130207223 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE - One embodiment describes a method of manufacturing a semiconductor device. Here, impurities are implanted into a semiconductor body via a first side of the semiconductor body. Thereafter, a drift zone layer on the first side of the semiconductor body is formed. The following is an ablation of the semiconductor body from a second side of the semiconductor body and up to pn junction defined by impurities. | 08-15-2013 |
20130249001 | Semiconductor Arrangement with a Superjunction Transistor and a Further Device Integrated in a Common Semiconductor Body - A semiconductor arrangement includes a semiconductor body and a power transistor arranged in a first device region of the semiconductor body. The power transistor includes at least one source region, a drain region, and at least one body region, at least one drift region of a first doping type and at least one compensation region of a second doping complementary to the first doping type, and a gate electrode arranged adjacent to the at least one body region and dielectrically insulated from the body region by a gate dielectric. The semiconductor arrangement also includes a further semiconductor device arranged in a second device region of the semiconductor body. The second device region includes a well-like structure of the second doping type surrounding a first semiconductor region of the first doping type. The further semiconductor device includes device regions arranged in the first semiconductor region. | 09-26-2013 |
20130320512 | Semiconductor Device and Method of Manufacturing a Semiconductor Device - A method of manufacturing a semiconductor device includes forming a trench in a semiconductor body. The method further includes doping a part of the semiconductor body via sidewalls of the trench by plasma doping. | 12-05-2013 |
20140048904 | Semiconductor Device, Integrated Circuit and Manufacturing Method Thereof - One embodiment of a semiconductor device includes a semiconductor body with a first side and a second side opposite to the first side. The semiconductor device further includes a first contact trench extending into the semiconductor body at the first side. The first contact trench includes a first conductive material electrically coupled to the semiconductor body adjoining the first contact trench. The semiconductor further includes a second contact trench extending into the semiconductor body at the second side. The second contact trench includes a second conductive material electrically coupled to the semiconductor body adjoining the second contact trench. | 02-20-2014 |
20140097488 | Method for Producing a Semiconductor Device and Field-Effect Semiconductor Device - A method for producing a semiconductor device is provided. The method includes providing a wafer including a main surface and a silicon layer arranged at the main surface and having a nitrogen concentration of at least about 3*10 | 04-10-2014 |
20140141592 | Method for Stress Reduced Manufacturing Semiconductor Devices - According to an embodiment, a method for stress-reduced forming a semiconductor device includes: providing a semiconductor wafer including an upper side and a first semiconductor layer of a first semiconductor material at the upper side; forming, in a vertical cross-section which is substantially orthogonal to the upper side, at the upper side a plurality of first vertical trenches and a plurality of second vertical trenches between adjacent first vertical trenches so that the first vertical trenches have, in the vertical cross-section, a larger horizontal extension than the second vertical trenches; and forming a plurality of third semiconductor layers at the upper side which are, in the vertical cross-section, spaced apart from each other by gaps each of which overlaps, in the vertical cross-section, with a respective first vertical trench when seen from above. At least one of the third semiconductor layers includes a semiconductor material which is different to the first semiconductor material. | 05-22-2014 |
20140353742 | Semiconductor Device and Method for Producing the Same - A power semiconductor device comprises a first substrate that is highly doped with a first dopant type, the first substrate having a front face and a back face, the back face forming a backside of the device, a vertical p-type FET and a vertical n-type FET provided laterally adjacent to each other on the front face of the first substrate, wherein one of the FETs has a first drift zone with a complementary doping to the first dopant of the first substrate, and wherein the p-type FET and the n-type FET share the first substrate as a common backside, and wherein a region between the first drift zone and the first substrate comprises a highly conductive structure providing a low ohmic connection between the first drift zone and the first substrate. Further, a method for producing such a device is provided. | 12-04-2014 |
20150076664 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE - One embodiment describes a method of manufacturing a semiconductor device. Here, impurities are implanted into a semiconductor body via a first side of the semiconductor body. Thereafter, a drift zone layer on the first side of the semiconductor body is formed. The following is an ablation of the semiconductor body from a second side of the semiconductor body and up to pn junction defined by impurities. | 03-19-2015 |