Patent application number | Description | Published |
20100011127 | METHODS AND APPARATUS FOR CONTROL USING CONTROL DEVICES THAT PROVIDE A VIRTUAL MACHINE ENVIRONMENT AND THAT COMMUNICATE VIA AN IP NETWORK - The invention provides improved methods and apparatus for control using field and control devices that provide a virtual machine environment and that communicate via an IP network. By way of non-limiting example, such field device can be an “intelligent” transmitter or actuator that includes a low power processor, along with a random access memory, a read-only memory, FlashRAM, and a sensor interface. The processor can execute a real-time operating system, as well as a Java virtual machine (JVM). Java byte code executes in the JVM to configure the field device to perform typical process control functions, e.g., for proportional integral derivative (PID) control and signal conditioning. Control networks can include a plurality of such field and control devices interconnected by an IP network, such as an Ethernet. | 01-14-2010 |
20100076604 | METHOD AND APPARATUS FOR CONTROL USING CONTROL DEVICES THAT PROVIDE A VIRTUAL MACHINE ENVIRONMENT AND THAT COMMUNICATE VIA AN IP NETWORK - The invention provides improved methods and apparatus for control using field and control devices that provide a virtual machine environment and that communicate via an IP network. By way of non-limiting example, such field device can be an “intelligent” transmitter or actuator that includes a low power processor, along with a random access memory, a read-only memory, FlashRAM, and a sensor interface. The processor can execute a real-time operating system, as well as a Java virtual machine (JVM). Java byte code executes in the JVM to configure the field device to perform typical process control functions, e.g., for proportional integral derivative (PID) control and signal conditioning. Control networks can include a plurality of such field and control devices interconnected by an IP network, such as an Ethernet. | 03-25-2010 |
20140107810 | METHODS AND APPARATUS FOR CONTROL USING CONTROL DEVICES THAT PROVIDE A VIRTUAL MACHINE ENVIRONMENT AND THAT COMMUNICATE VIA AN IP NETWORK - The invention provides improved methods and apparatus for control using field and control devices that provide a virtual machine environment and that communicate via an IP network. By way of non-limiting example, such field device can be an “intelligent” transmitter or actuator that includes a low power processor, along with a random access memory, a read-only memory, FlashRAM, and a sensor interface. The processor can execute a real-time operating system, as well as a Java virtual machine (JVM). Java byte code executes in the JVM to configure the field device to perform typical process control functions, e.g., for proportional integral derivative (PID) control and signal conditioning. Control networks can include a plurality of such field and control devices interconnected by an IP network, such as an Ethernet. | 04-17-2014 |
Patent application number | Description | Published |
20090308403 | ORAL APPLIANCES WITH MAJOR CONNECTORS AND METHODS FOR MANUFACTURE - Oral appliances adapted to for spacing the occlusal surfaces of the teeth of a user are disclosed. The oral appliances have a major connector interconnecting a first bite pad and a second bite pad. The first bite pad can include a first spacer and the second bite pad can include a second spacer that are configured to maintain the spacing of the occlusal surfaces of opposing teeth of a user during clenching or upon an impact to the jaw. Methods for the manufacture of composite oral appliances are also disclosed. The methods include forming a composite oral appliance over a model of a user's mouth. | 12-17-2009 |
20100252053 | METHODS AND APPARATUS FOR REDUCTION OF LACTATE - Oral apparatus and methods to inhibit the increase of lactate levels during physical and/or mental exertion are disclosed. The oral apparatus include at least a first bite pad and a second bite pad. The first bite pad and the second bite pad are each configured to be positioned between at least two of the molars of a user. The bite pads are generally configured to direct the posterior of the lower mandible downward and/or forward in response to a clenching force exerted by a user. When worn during physical and/or mental exertion, the oral apparatus can reduce the accumulation of lactate normally generated by the physical and/or mental exertion without the oral apparatus. | 10-07-2010 |
20100269836 | COMPOSITE ORAL APPLIANCES AND METHODS FOR MANUFACTURE - Oral appliances adapted to for spacing the occlusal surfaces of the teeth of a user are disclosed. The oral appliances have an integral retention band interconnecting a first bite pad and a second bite pad. The first bite pad can include a first spacer and the second bite pad can include a second spacer that are configured to maintain the spacing of the occlusal surfaces of opposing teeth of a user during clenching or upon an impact to the jaw. Methods for the manufacture of composite oral appliances are also disclosed. The methods include forming a composite oral appliance over a model of a user's mouth. | 10-28-2010 |
20120305008 | METHODS AND APPARATUS FOR REDUCTION OF LACTATE - Oral apparatus and methods to inhibit the increase of lactate levels during physical and/or mental exertion are disclosed. The oral apparatus include at least a first bite pad and a second bite pad. The first bite pad and the second bite pad are each configured to be positioned between at least two of the molars of a user. The bite pads are generally configured to direct the posterior of the lower mandible downward and/or forward in response to a clenching force exerted by a user. When worn during physical and/or mental exertion, the oral apparatus can reduce the accumulation of lactate normally generated by the physical and/or mental exertion without the oral apparatus. | 12-06-2012 |
20130074851 | DENTAL APPLIANCE - A dental appliance is disclosed herein. The dental appliance, in various aspects, includes arms disposed about occlusal pad to secure the dental appliance in a removable fashion to the teeth of the user. The occlusal pad is formed from an occlusal pad material transformable between a pliable state and a non-pliable state, in various aspects. Associated methods of use are also disclosed herein. | 03-28-2013 |
20140026896 | COMPOSITE ORAL APPLIANCES AND METHODS FOR MANUFACTURE - Oral appliances adapted to for spacing the occlusal surfaces of the teeth of a user are disclosed. The oral appliances have an integral retention band interconnecting a first bite pad and a second bite pad. The first bite pad can include a first spacer and the second bite pad can include a second spacer that are configured to maintain the spacing of the occlusal surfaces of opposing teeth of a user during clenching or upon an impact to the jaw. Methods for the manufacture of composite oral appliances are also disclosed. The methods include forming a composite oral appliance over a model of a user's mouth. | 01-30-2014 |
Patent application number | Description | Published |
20110006047 | METHOD AND SYSTEM FOR MONITORING AND CHARACTERIZING THE CREATION OF A MANUAL WELD - A method and system for monitoring and characterizing the creation of a manual weld is disclosed. The system generally includes a welding gun having a target, an imaging system, a processor, and a display. During the creation of a manual weld, the imaging system captures a plurality of images of the target. The processor analyzes the plurality of images of the target to calculate a plurality of position and orientation characteristics associated with the manipulation of the welding gun during the welding process. The display illustrates at least one of the plurality of position and orientation characteristics to provide feedback regarding the creation of the weld. In one embodiment, the disclosed method and system may be utilized as a tool for training welders. | 01-13-2011 |
20110117527 | WELDING TRAINING SYSTEM - A system for training welders that includes a data generating component, a data capturing component and a data processing and visualization component. The data generating component operates in real time and derives data from an actual manually-executed weld and further includes a weld process-specific jig, a calibration block positioned on the jig, wherein the geometric configuration of the calibration block is specific to a particular type of weld joint, a weld coupon positioned on the welding process-specific jig adjacent to the calibration block, a welding gun for use by a trainee, wherein the welding gun is operative to form the weld; and at least one target mounted on the welding gun that is recognized by the data processing and visualization component for providing multidimensional position and orientation feedback to the trainee. | 05-19-2011 |
20120298640 | SYSTEM FOR CHARACTERIZING MANUAL WELDING OPERATIONS - A system for characterizing manual welding exercises and providing valuable training to welders that includes components for generating, capturing, and processing data. The data generating component further includes a fixture, workpiece, at least one calibration devices each having at least two point markers integral therewith, and a welding tool. The data capturing component further includes an imaging system for capturing images of the point markers and the data processing component is operative to receive information from the data capturing component and perform various position and orientation calculations. | 11-29-2012 |
20120310551 | THREE-DIMENSIONAL MATRIX PHASED ARRAY SPOT WELD INSPECTION SYSTEM - A system for characterizing a spot weld including an acoustic probe that further includes a plurality of ultrasonic transducer elements arranged in a curved array, wherein the transducer elements are operative to generate ultrasonic signals and to receive reflections thereof; and a combination of materials for allowing the probe to conform to a contoured surface of the spot weld while enabling sound energy to be transferred directly into the spot weld under test conditions; a phased array excitation unit coupled to the array of transducer elements for ultrasonically exciting transducer elements; and a controller coupled to the phased array excitation unit for controlling the operation of the phased array unit, gathering and processing information from the ultrasonic transducers, and generating a two-dimensional, color coded image that characterizes the integrity of the spot weld. | 12-06-2012 |
20150056586 | WELDING TRAINING SYSTEM - A system for training welders that includes a data generating component, a data capturing component and a data processing and visualization component. The data generating component operates in real time and derives data from an actual manually-executed weld and further includes a weld process-specific jig, a calibration block positioned on the jig, wherein the geometric configuration of the calibration block is specific to a particular type of weld joint, a weld coupon positioned on the welding process-specific jig adjacent to the calibration block, a welding gun for use by a trainee, wherein the welding gun is operative to form the weld; and at least one target mounted on the welding gun that is recognized by the data processing and visualization component for providing multidimensional position and orientation feedback to the trainee. | 02-26-2015 |
20150253288 | AUTOMATED WELD INSPECTION SYSTEM - An automated system for non-destructively evaluating spot welds that includes at least one matrix phased array probe; a fixture adapted to be mounted on a robot or other mechanical actuator, wherein the fixture is further adapted to retain the at least one matrix phased array probe; and an enclosure that includes at least one input for connecting to the at least one matrix phased array probe, ultrasonic phased array transmitting and receiving circuitry in electrical communication with the at least one input, at least one data processor running software that includes at least one algorithm for processing data received from the probe and generating discrete specifications of evaluated welds, wherein the discrete specifications further include pass indications or fail indications regarding weld acceptability; and at least one output for outputting the discrete specifications of evaluated welds. | 09-10-2015 |
Patent application number | Description | Published |
20090192855 | Computer-Implemented Data Storage Systems And Methods For Use With Predictive Model Systems - Systems and methods for performing fraud detection. As an example, a system and method can be configured to contain a raw data repository for storing raw data related to financial transactions. A data store contains rules to indicate how many generations or to indicate a time period within which data items are to be stored in the raw data repository. Data items stored in the raw data repository are then accessed by a predictive model in order to perform fraud detection. | 07-30-2009 |
20090192957 | Computer-Implemented Data Storage Systems And Methods For Use With Predictive Model Systems - Systems and methods for performing fraud detection. As an example, a system and method can be configured to contain a raw data repository for storing raw data related to financial transactions. A data store contains rules to indicate how many generations or to indicate a time period within which data items are to be stored in the raw data repository. Data items stored in the raw data repository are then accessed by a predictive model in order to perform fraud detection. | 07-30-2009 |
20090234683 | Detecting and Measuring Risk with Predictive Models Using Content Mining - Computer implemented methods and systems of processing transactions to determine the risk of transaction convert high categorical information, such as text data, to low categorical information, such as category or cluster IDs. The text data may be merchant names or other textual content of the transactions, or data related to a consumer, or any other type of entity which engages in the transaction. Content mining techniques are used to provide the conversion from high to low categorical information. In operation, the resulting low categorical information is input, along with other data, into a statistical model. The statistical model provides an output of the level of risk in the transaction. Methods of converting the high categorical information to low categorical clusters, of using such information, and other aspects of the use of such clusters are disclosed. | 09-17-2009 |
20120317008 | Computer-Implemented Systems And Methods For Handling And Scoring Enterprise Data - Systems and methods for storing transaction data associated with transactions of disparate types are provided. Transaction data is received describing a transaction that has occurred, the transaction being performed by an customer of a particular customer type and the transaction being performed using a channel of a particular channel type. Transaction data about the customer is stored in an customer segment according to one of a plurality of customer templates, the one of the plurality of customer templates being selected according to the customer type. Transaction data about the channel is stored in a channel segment according to one of a plurality of channel templates, the one of the plurality of channel templates being selected according to the channel type. Data from the customer segment, the activity segment, and the channel segment for the transaction is extracted and scored by a predictive model. | 12-13-2012 |
20120317013 | Computer-Implemented Systems And Methods For Scoring Stored Enterprise Data - Systems and methods are provided for scoring transaction data representative of transactions of disparate types transaction data describing a transaction that has occurred is received. The transaction data is stored in a plurality of segments, where a segment is formatted according to a template, where the template is selected based on an attribute of the transaction, and where the attribute is a customer attribute, an activity attribute, or a channel attribute. Transaction data associated with a segment is aggregated based on a particular attribute. The aggregate transaction data is provided to a predictive model to generate a fraud score. New transaction data is received describing a new transaction, wherein the new transaction includes the particular attribute. A real-time score is provided indicating a likelihood of fraud for the new transaction, wherein the score is based at least in part on the fraud score generated using the aggregate transaction data. | 12-13-2012 |
20120317027 | Computer-Implemented Systems And Methods For Real-Time Scoring Of Enterprise Data - Systems and methods are provided for providing real-time scoring of received transaction data. Transaction data describing a particular transaction that has occurred is received. The transaction data is stored in an enterprise database, where the enterprise database is configured to store transactions of disparate types, where the transaction data is stored using a plurality of segments, where a segment is formatted according to a template, and where the template is selected based on an attribute of the transaction, wherein the attribute is a customer attribute, an activity attribute, or a channel attribute. A transaction type of the particular transaction is determined. One or more models are selected from a pool of models based on the transaction type, wherein the one or more models are configured based on a plurality of records from the enterprise database, and a score of the received transaction data is generated based on the transaction data. | 12-13-2012 |
20130339218 | Computer-Implemented Data Storage Systems and Methods for Use with Predictive Model Systems - Systems and methods for performing fraud detection. As an example, a system and method can be configured to contain a raw data repository for storing raw data related to financial transactions. A data store contains rules to indicate how many generations or to indicate a time period within which data items are to be stored in the raw data repository. Data items stored in the raw data repository are then accessed by a predictive model in order to perform fraud detection. | 12-19-2013 |
20140172690 | Systems and Methods For Matching Domain Specific Transactions - Systems and methods for matching domain-specific transactions are provided. Some of the disclosed systems and methods can include receiving, on a computing device, transaction data associated with an entity, retrieving signature data associated with the entity, wherein the signature data includes historic data associated with the entity; updating the signature data to include the transaction data, wherein updating includes using a model, and generating a score for the transaction data using the updated signature data and the model. The disclosed system and method further includes receiving new transaction data associated with the entity; retrieving the updated signature data associated with the entity; determining whether the transaction data and the new transaction data are related, and if so, updating the transaction data with the new transaction data, and generating a score for the updated transaction data using the updated signature data and the model. | 06-19-2014 |
20140279527 | Enterprise Cascade Models - Methods, systems, computer-readable media, and apparatuses for detecting unauthorized activity are disclosed. Detecting unauthorized activity is done by accessing first data that represents activity involving a first service provided to a customer, accessing second data that represents activity involving a second service provided to a customer. The activity involving the second service and the activity involving the first service both include authorized customer activity, and the activity associated with the second service further includes unauthorized activity. The first data is filtered using a filtering criteria and a portion of the first data is selected to be retained. The second data and the retained portion of the first data are analyzed, and the analysis includes classifying the activity associated with the second service in a way that distinguishes the unauthorized activity from the authorized activity associated with the second service. | 09-18-2014 |
20140282856 | RULE OPTIMIZATION FOR CLASSIFICATION AND DETECTION - This disclosure describes methods, systems, and computer-program products for determining classification rules to use within a fraud detection system The classification rules are determined by accessing distributional data representing a distribution of historical transactional events over a multivariate observational sample space defined with respect to multiple transactional variables. Each of the transactional events is represented by data with respect to each of the variables, and the distributional data is organized with respect to multi-dimensional subspaces of the sample space. A classification rule that references at least one of the subspaces is accessed, and the rule is modified using local optimization applied using the distributional data. A pending transaction is classified based on the modified classification rule and the transactional data. | 09-18-2014 |
20150269578 | CONTROLLING ECOMMERCE AUTHENTICATION WITH NON-LINEAR ANALYTICAL MODELS - A method of operating a computer system is disclosed. An eCommerce authentication request is received. Content of the eCommerce authentication request is processed through a non-linear analytical model to generate a risk score. The eCommerce authentication request is selectively provided to an authentication node based on the risk score. Related authentication gateway nodes and computer program products are disclosed. | 09-24-2015 |
20150269579 | CONTROLLING ECOMMERCE AUTHENTICATION BASED ON COMPARING CARDHOLDER INFORMATION AMONG ECOMMERCE AUTHENTICATION REQUESTS FROM MERCHANT NODES - A method of operating a computer system is disclosed. An eCommerce authentication request is received from a merchant node. The eCommerce authentication request has content including cardholder information. A risk score for the eCommerce authentication request is generated based on comparison of the cardholder information of the eCommerce authentication request to cardholder information of eCommerce authentication requests of a plurality of merchant nodes. The eCommerce authentication request is selectively provided to an authentication node based on the risk score. | 09-24-2015 |
20150269580 | CONTROLLING ECOMMERCE AUTHENTICATION BASED ON COMPARING MERCHANT INFORMATION OF ECOMMERCE AUTHENTICATION REQUESTS - A method of operating a computer system is disclosed. An eCommerce authentication request is received from a merchant node. The eCommerce authentication request has content including merchant information. A risk score for the eCommerce authentication request is generated based on comparison of the merchant information of the eCommerce authentication request to merchant information of eCommerce authentication requests of a plurality of merchant nodes. The eCommerce authentication request is selectively provided to an authentication node based on the risk score. | 09-24-2015 |
Patent application number | Description | Published |
20090030503 | METHOD AND APPARATUS FOR PERCUTANEOUS AORTIC VALVE REPLACEMENT - A method for percutaneous aortic valve (PAV) replacement and a temporary aortic valve used to facilitate the same. The temporary valve is comprised of a reversibly expandable occluding means, such as balloons, surrounding a central catheter mechanism. The temporary valve is positioned within the ascending aorta, just above and downstream from the coronary ostia. The occluding means is configured such that, when fully expanded against the aortic wall, gaps are left that promote continuous coronary perfusion during the cardiac cycle. The native aortic valve is next dilated, and then ablated through deployment of an ablation stent. The ablation stent displaces the native valve tissues and remains within the aortic annulus to receive and retain the PAV. The PAV can then be positioned and deployed within the ablation stent with precision and ease. Ablation of the native aortic valve removes the structural obstacles to precise PAV placement. The temporary aortic valve mediates the hemodynamic forces encountered by the surgeon following native valve ablation. The temporary valve also promotes patient stability through continuous coronary perfusion and a moderated transvavlular pressure gradient. Mathematical considerations for determining the optimum cross-sectional area for the temporary valve blood perfusion gaps are also described. | 01-29-2009 |
20090030510 | METHODS AND APPARATUS FOR PERCUTANEOUS AORTIC VALVE REPLACEMENT - A delivery system and method for percutaneous aortic valve (PAV) replacement and apparatus used therein. A temporary aortic valve comprised of a reversibly expandable occluding means, such as balloons, surrounds a central catheter mechanism. The temporary valve is positioned within the ascending aorta, just above and downstream from the coronary ostia. The occluding means is configured such that, when fully expanded against the aortic wall, gaps are left that promote continuous coronary perfusion during the cardiac cycle. The temporary valve with occluding means substitutes for the function of the native aortic valve during its replacement. The native aortic valve is next dilated, and then ablated through deployment of low profile, elongated, sequentially delivered stents. The ablation stent(s) displace the native valve tissues and remain within the aortic annulus to receive and provide a structure for retaining the PAV. The PAV is delivered, positioned and deployed within the ablation stent(s) at the aortic annulus with precision and relative ease. Ablation of the native aortic valve removes the structural obstacles to precise PAV placement. The temporary aortic valve mediates the hemodynamic forces upon the devices as encountered by the surgeon following native valve ablation. The temporary valve also promotes patient stability through continuous coronary perfusion and a moderated transvalvular pressure gradient and regurgitation. Sequential delivery of low profile PAV components minimize the risk of trauma and injury to vascular tissues. Mathematical considerations for determining the optimum cross-sectional area for the temporary valve blood perfusion gaps are also described. | 01-29-2009 |
20120116439 | METHOD AND SYSTEM FOR BALLOON COUNTERPULSATION DURING AORTIC VALVE REPLACEMENT - Methods and systems for regulating aortic regurgitation during aortic valve replacement or repair procedures utilize a temporary aortic valve (TAV) catheter and a controller. The temporary aortic valve catheter has an expandable occlusion device which can partially occlude the aortic lumen during ventricular diastole with a lesser occlusion during ventricular systole. Exemplary balloon structures include multiple, independently inflatable balloons which are inflated in synchrony with the cardiac cycle by the controller. By controlling aortic regurgitation, the repair or replacement protocols can be conducted with less interference from blood flow. | 05-10-2012 |
20140142692 | Methods and Apparatus for Percutaneous Aortic Valve Replacement - A delivery system and method for percutaneous aortic valve (PAV) replacement and apparatus used therein. A temporary aortic valve including a reversibly expandable occluding means surrounds a central catheter mechanism. The temporary valve is positioned within the ascending aorta, just above and downstream from the coronary ostia. The occluding means is configured such that, when fully expanded against the aortic wall, gaps are left that promote continuous coronary perfusion during the cardiac cycle. The temporary valve substitutes for the function of the native aortic valve during its replacement. The native aortic valve is next dilated, and then ablated through deployment of low profile, elongated, sequentially delivered stents. The stent(s) displace the native tissues and remain within the aortic annulus to receive and provide a structure for retaining the PAV. The PAV is delivered, positioned and deployed within the stent(s) at the aortic annulus with precision and relative ease. | 05-22-2014 |
20140200658 | Method and Apparatus for Percutaneous Aortic Valve Replacement - A catheter adapted for placement in the ascending aorta comprises a central catheter mechanism and a balloon structure or other occluding structure at its distal end. The catheter may be placed over the aortic arch such that the occluding structure is placed in the ascending aorta just above the Sinus of Valsalva and coronary ostia. Once in place, the occluding structure is inflated to control blood flow through the aorta during aortic valve ablation and replacement protocols. | 07-17-2014 |
Patent application number | Description | Published |
20080293149 | ASSAYS FOR PREIMPLANTATION FACTOR AND PREIMPLANTATION FACTOR PEPTIDES - The present invention relates to assay methods used for detecting the presence of PIF, and to PIF peptides identified using this assay. In particular, the present invention relates to flow cytometry assays for detecting PIF. It is based, at least in part, on the observation that flow cytometry using fluorescently labeled anti-lymphocyte and anti-platelet antibodies demonstrated an increase in rosette formation in the presence of PIF. It is further based on the observation that flow cytometry demonstrated that monoclonal antibody binding to CD2 decreased in the presence of PIF. The present invention further relates to PIF peptides which, when added to Jurkat cell cultures, have been observed to either (i) decrease binding of anti-CD2 antibody to Jurkat cells; (ii) increase expression of CD2 in Jurkat cells; or (iii) decrease Jurkat cell viability. In additional embodiments, the present invention provides for ELISA assays which detect PIF by determining the effect of a test sample on the binding of anti-CD2 antibody to a CD2 substrate. | 11-27-2008 |
20080299677 | NEW ASSAYS FOR PREIMPLANTATION FACTOR AND PREIMPLANTATION FACTOR PEPTIDES - The present invention relates to assay methods used for detecting the presence of PIF, and to PIF peptides identified using this assay. In particular, the present invention relates to flow cytometry assays for detecting PIF. It is based, at least in part, on the observation that flow cytometry using fluorescently labeled anti-lymphocyte and anti-platelet antibodies demonstrated an increase in rosette formation in the presence of PIF. It is further based on the observation that flow cytometry demonstrated that monoclonal antibody binding to CD2 decreased in the presence of PIF. The present invention further relates to PIF peptides which, when added to Jurkat cell cultures, have been observed to either (i) decrease binding of anti-CD2 antibody to Jurkat cells; (ii) increase expression of CD2 in Jurkat cells; or (iii) decrease Jurkat cell viability. In additional embodiments, the present invention provides for ELISA assays which detect PIF by determining the effect of a test sample on the binding of anti-CD2 antibody to a CD2 substrate. | 12-04-2008 |
20080305468 | ASSAYS FOR PREIMPLANTATION FACTOR AND PREIMPLANTATION FACTOR PEPTIDES - The present invention relates to assay methods used for detecting the presence of PIF, and to PIF peptides identified using this assay. In particular, the present invention relates to flow cytometry assays for detecting PIF. It is based, at least in part, on the observation that flow cytometry using fluorescently labeled anti-lymphocyte and anti-platelet antibodies demonstrated an increase in rosette formation in the presence of PIF. It is further based on the observation that flow cytometry demonstrated that monoclonal antibody binding to CD2 decreased in the presence of PIF. The present invention further relates to PIF peptides which, when added to Jurkat cell cultures, have been observed to either (i) decrease binding of anti-CD2 antibody to Jurkat cells; (ii) increase expression of CD2 in Jurkat cells; or (iii) decrease Jurkat cell viability. In additional embodiments, the present invention provides for ELISA assays which detect PIF by determining the effect of a test sample on the binding of anti-CD2 antibody to a CD2 substrate. | 12-11-2008 |
20080305552 | ASSAYS FOR PREIMPLANTATION FACTOR AND PREIMPLANTATION FACTOR PEPTIDES - The present invention relates to assay methods used for detecting the presence of PIF, and to PIF peptides identified using this assay. In particular, the present invention relates to flow cytometry assays for detecting PIF. It is based, at least in part, on the observation that flow cytometry using fluorescently labeled anti-lymphocyte and anti-platelet antibodies demonstrated an increase in rosette formation in the presence of PIF. It is further based on the observation that flow cytometry demonstrated that monoclonal antibody binding to CD2 decreased in the presence of PIF. The present invention further relates to PIF peptides which, when added to Jurkat cell cultures, have been observed to either (i) decrease binding of anti-CD2 antibody to Jurkat cells; (ii) increase expression of CD2 in Jurkat cells; or (iii) decrease Jurkat cell viability. In additional embodiments, the present invention provides for ELISA assays which detect PIF by determining the effect of a test sample on the binding of anti-CD2 antibody to a CD2 substrate. | 12-11-2008 |
20090011427 | ASSAYS FOR PREIMPLANTATION FACTOR AND PREIMPLANTATION FACTOR PEPTIDES - The present invention relates to assay methods used for detecting the presence of PIF, and to PIF peptides identified using this assay. In particular, the present invention relates to flow cytometry assays for detecting PIF. It is based, at least in part, on the observation that flow cytometry using fluorescently labeled anti-lymphocyte and anti-platelet antibodies demonstrated an increase in rosette formation in the presence of PIF. It is further based on the observation that flow cytometry demonstrated that monoclonal antibody binding to CD2 decreased in the presence of PIF. The present invention further relates to PIF peptides which, when added to Jurkat cell cultures, have been observed to either (i) decrease binding of anti-CD2 antibody to Jurkat cells; (ii) increase expression of CD2 in Jurkat cells; or (iii) decrease Jurkat cell viability. In additional embodiments, the present invention provides for ELISA assays which detect PIF by determining the effect of a test sample on the binding of anti-CD2 antibody to a CD2 substrate. | 01-08-2009 |
20090029919 | Leptin peptide antagonists - Disclosed herein are peptides comprising a leptin sequence and methods for their use in preventing ObR signaling in a leptin-responsive cell. A leptin peptide of the present invention binds to but does not activate ObR signaling in a leptin-responsive cell, thereby inhibiting the up-regulatory effects of leptin on ObR signaling in the leptin-responsive cell. Administration of the peptide effectively prevents embryo implantation in a mammal to which the peptide has been administered. Also disclosed herein is a method for identifying a peptide antagonist of ObR, wherein the peptide comprises a leptin sequence. | 01-29-2009 |
20100197040 | ASSAYS FOR PREIMPLANTATION FACTOR AND PREIMPLANTATION FACTOR PEPTIDES - The present invention relates to assay methods used for detecting the presence of PIF, and to PIF peptides identified using this assay. In particular, the present invention relates to flow cytometry assays for detecting PIF. It is based, at least in part, on the observation that flow cytometry using fluorescently labeled anti-lymphocyte and anti-platelet antibodies demonstrated an increase in rosette formation in the presence of PIF. It is further based on the observation that flow cytometry demonstrated that monoclonal antibody binding to CD2 decreased in the presence of PIF. The present invention further relates to PIF peptides which, when added to Jurkat cell cultures, have been observed to either (i) decrease binding of anti-CD2 antibody to Jurkat cells; (ii) increase expression of CD2 in Jurkat cells; or (iii) decrease Jurkat cell viability. In additional embodiments, the present invention provides for ELISA assays which detect PIF by determining the effect of a test sample on the binding of anti-CD2 antibody to a CD2 substrate. | 08-05-2010 |
20110190473 | LEPTIN PEPTIDE ANTAGONISTS - Disclosed herein are peptides comprising a leptin sequence and methods for their use in preventing ObR signaling in a leptin-responsive cell. A leptin peptide of the present invention binds to but does not activate ObR signaling in a leptin-responsive cell, thereby inhibiting the up-regulatory effects of leptin on ObR signaling in the leptin-responsive cell. Administration of the peptide effectively prevents embryo implantation in a mammal to which the peptide has been administered. Also disclosed herein is a method for identifying a peptide antagonist of ObR, wherein the peptide comprises a leptin sequence. | 08-04-2011 |
20120009605 | NEW ASSAYS FOR PREIMPLANTATION FACTOR AND PREIMPLANTATION FACTOR PEPTIDES - The present invention relates to assay methods used for detecting the presence of PIF, and to PIF peptides identified using this assay. In particular, the present invention relates to flow cytometry assays for detecting PIF. It is based, at least in part, on the observation that flow cytometry using fluorescently labeled anti-lymphocyte and anti-platelet antibodies demonstrated an increase in rosette formation in the presence of PIF. It is further based on the observation that flow cytometry demonstrated that monoclonal antibody binding to CD2 decreased in the presence of PIF. The present invention further relates to PIF peptides which, when added to Jurkat cell cultures, have been observed to either (i) decrease binding of anti-CD2 antibody to Jurkat cells; (ii) increase expression of CD2 in Jurkat cells; or (iii) decrease Jurkat cell viability. In additional embodiments, the present invention provides for ELISA assays which detect PIF by determining the effect of a test sample on the binding of anti-CD2 antibody to a CD2 substrate. | 01-12-2012 |
20120245104 | NOVEL RETRO-INVERSO LEPTIN PEPTIDE ANTAGONISTS - Disclosed herein are peptides comprising a leptin sequence and methods for their use in preventing ObR signaling in a leptin-responsive cell. A leptin peptide of the present invention binds to but does not activate ObR signaling in a leptin-responsive cell, thereby inhibiting the up-regulatory effects of leptin on ObR signaling in the leptin-responsive cell. Administration of the peptide effectively prevents embryo implantation in a mammal to which the peptide has been administered. Also disclosed herein is a method for identifying a peptide antagonist of ObR, wherein the peptide comprises a leptin sequence. Further disclosed are truncations, modifications and retro-inversions of the peptides of the present invention. | 09-27-2012 |
Patent application number | Description | Published |
20090173980 | PROVIDING ISOLATION FOR WORDLINE PASSING OVER DEEP TRENCH CAPACITOR - A memory cell has an access transistor and a capacitor with an electrode disposed within a deep trench. STI oxide covers at least a portion of the electrode, and a liner covers a remaining portion of the electrode. The liner may be a layer of nitride over a layer of oxide. Some of the STI may cover a portion of the liner. In a memory array a pass wordline may be isolated from the electrode by the STI oxide and the liner. | 07-09-2009 |
20090174031 | DRAM HAVING DEEP TRENCH CAPACITORS WITH LIGHTLY DOPED BURIED PLATES - By controlling buried plate doping level and bias condition, different capacitances can be obtained from capacitors on the same chip with the same layout and deep trench process. The capacitors may be storage capacitors of DRAM/eDRAM cells. The doping concentration may be less than 3E19cm−3, a voltage difference between the biases of the buried electrodes may be at least 0.5V, and a capacitance of one capacitor may be at least 1.2 times, such as 2.0 times the capacitance of another capacitor. | 07-09-2009 |
20090184356 | DEEP TRENCH CAPACITOR IN A SOI SUBSTRATE HAVING A LATERALLY PROTRUDING BURIED STRAP - A deep trench is formed to a depth midway into a buried insulator layer of a semiconductor-on-insulator (SOI) substrate. A top semiconductor layer is laterally recessed by an isotropic etch that is selective to the buried insulator layer. The deep trench is then etched below a bottom surface of the buried insulator layer. Ion implantation is performed at an angle into the deep trench to dope the sidewalls of the deep trench beneath the buried insulator layer, while the laterally recessed sidewalls of the top semiconductor layer are not implanted with dopant ions. A node dielectric and trench fill materials are deposited into the deep trench. A buried strap has an upper buried strap sidewall that is offset from a lower buried strap sidewall and a deep trench sidewall. | 07-23-2009 |
20090240875 | CONTENT ADDRESSABLE MEMORY WITH HIDDEN TABLE UPDATE, DESIGN STRUCTURE AND METHOD - Disclosed are embodiments of memory circuit having two discrete memory devices with two discrete memory arrays that store essentially identical data banks. The first device is a conventional memory adapted to perform all maintenance operations that require read functions (i.e., all update and refresh operations). The second device is a DRAM-based CAM device adapted to perform parallel search and overwrite operations only. Performance of overwrite operations by the second device occurs in conjunction with performance of maintenance operations by the first device so that corresponding memory cells in the two devices store essentially identical data values. Since the data banks in the memory devices are essentially identical and since maintenance and parallel search operations are not performed by the same device, the parallel search operations can be performed without interruption. Also disclosed are embodiments of an associated design structure and method. | 09-24-2009 |
20090289291 | SOI DEEP TRENCH CAPACITOR EMPLOYING A NON-CONFORMAL INNER SPACER - A bottle shaped trench for an SOI capacitor is formed by a simple processing sequence. A non-conformal dielectric layer with an optional conformal dielectric diffusion barrier layer underneath is formed on sidewalls of a deep trench. Employing an isotropic etch, the non-conformal dielectric layer is removed from a bottom portion of the deep trench, leaving a dielectric spacer covering sidewalls of the buried insulator layer and the top semiconductor layer. The bottom portion of the deep trench is expanded to form a bottle shaped trench, and a buried plated is formed underneath the buried insulator layer. The dielectric spacer may be recessed during formation of a buried strap to form a graded thickness dielectric collar around the upper portion of an inner electrode. Alternately, the dielectric spacer may be removed prior to formation of a buried strap. | 11-26-2009 |
20100237417 | Through-Gate Implant for Body Dopant - The present invention, provides a semiconductor device including a substrate including a semiconductor layer overlying an insulating layer, wherein a back gate structure is present underlying the insulating layer and a front gate structure on the semiconductor layer; a channel dopant region underlying the front gate structure of the substrate, wherein the channel dopant region has a first concentration present at an interface of the semiconductor layer and the insulating layer and at least a second concentration present at the interface of the front gate structure and the semiconductor layer, wherein the first concentration is greater than the second concentration; and a source region and drain region present in the semiconductor layer of the substrate. | 09-23-2010 |
20110092043 | DEEP TRENCH CAPACITOR IN A SOI SUBSTRATE HAVING A LATERALLY PROTRUDING BURIED STRAP - A deep trench is formed to a depth midway into a buried insulator layer of a semiconductor-on-insulator (SOI) substrate. A top semiconductor layer is laterally recessed by an isotropic etch that is selective to the buried insulator layer. The deep trench is then etched below a bottom surface of the buried insulator layer. Ion implantation is performed at an angle into the deep trench to dope the sidewalls of the deep trench beneath the buried insulator layer, while the laterally recessed sidewalls of the top semiconductor layer are not implanted with dopant ions. A node dielectric and trench fill materials are deposited into the deep trench. A buried strap has an upper buried strap sidewall that is offset from a lower buried strap sidewall and a deep trench sidewall. | 04-21-2011 |
20110291169 | REDUCED CORNER LEAKAGE IN SOI STRUCTURE AND METHOD - A structural alternative to retro doping to reduce transistor leakage is provided by providing a liner in a trench, undercutting a conduction channel region in an active semiconductor layer, etching a side, corner and/or bottom of the conduction channel where the undercut exposes semiconductor material in the active layer and replacing the removed portion of the conduction channel with insulator. This shaping of the conduction channel increases the distance to adjacent circuit elements which, if charged, could otherwise induce a voltage and cause a change in back-channel threshold in regions of the conduction channel and narrows and reduces cross-sectional area of the channel where the conduction in the channel is not well-controlled; both of which effects significantly reduce leakage of the transistor. | 12-01-2011 |
20110316061 | STRUCTURE AND METHOD TO CONTROL BOTTOM CORNER THRESHOLD IN AN SOI DEVICE - Semiconductor structures and methods to control bottom corner threshold in a silicon-on-insulator (SOI) device. A method includes doping a corner region of a semiconductor-on-insulator (SOI) island. The doping includes tailoring a localized doping of the corner region to reduce capacitive coupling of the SOI island with an adjacent structure. | 12-29-2011 |
20120086077 | FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEAKAGE AND BODY RESISTANCE - An FET structure on a semiconductor substrate which includes forming recesses for a source and a drain of the gate structure on a semiconductor substrate, halo implanting regions through the bottom of the source and drain recesses, the halo implanted regions being underneath the gate stack, implanting junction butting at the bottom of the source and drain recesses, and filling the source and drain recesses with a doped epitaxial material. In exemplary embodiments, the semiconductor substrate is a semiconductor on insulator substrate including a semiconductor layer on a buried oxide layer. In exemplary embodiments, the junction butting and halo implanted regions are in contact with the buried oxide layer. In other exemplary embodiments, there is no junction butting. In exemplary embodiments, halo implants implanted to a lower part of the FET body underneath the gate structure provide higher doping level in lower part of the FET body to reduce body resistance, without interfering with FET threshold voltage. | 04-12-2012 |
20120122303 | SEMICONDUCTOR STRUCTURE HAVING WIDE AND NARROW DEEP TRENCHES WITH DIFFERENT MATERIALS - Disclosed is a method of forming a semiconductor device structure in a semiconductor layer. The method includes forming a first trench of a first width and a second trench of a second width in the semiconductor layer; depositing a layer of first material which conforms to a wall of the first trench but does not fill it and which fills the second trench; removing the first material from the first trench, the first material remaining in the second trench; depositing a second material into and filling the first trench and over a top of the first material in the second trench; and uniformly removing the second material from the top of the first material in the second trench, wherein the first trench is filled with the second material and the second trench is filled with the first material and wherein the first material is different from the second material. | 05-17-2012 |
20120187490 | FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEAKAGE AND BODY RESISTANCE - A field effect transistor (FET) structure on a semiconductor substrate which includes a gate structure having a spacer on a semiconductor substrate; an extension implant underneath the gate structure; a recessed source and a recessed drain filled with a doped epitaxial material; halo implanted regions adjacent a bottom of the recessed source and drain and being underneath the gate stack. In an exemplary embodiment, there is implanted junction butting underneath the bottom of each of the recessed source and drain, the junction butting being separate and distinct from the halo implanted regions. In another exemplary embodiment, the doped epitaxial material is graded from a lower dopant concentration at a side of the recessed source and drain to a higher dopant concentration at a center of the recessed source and drain. In a further exemplary embodiment, the semiconductor substrate is a semiconductor on insulator substrate. | 07-26-2012 |
20120326233 | METHOD TO REDUCE THRESHOLD VOLTAGE VARIABILITY WITH THROUGH GATE WELL IMPLANT - The present disclosure provides a semiconductor device that may include a substrate including a semiconductor layer overlying an insulating layer. A gate structure that is present on a channel portion of the semiconductor layer. A first dopant region is present in the channel portion of the semiconductor layer, in which the peak concentration of the first dopant region is present within the lower portion of the gate conductor and the upper portion of the semiconductor layer. A second dopant region is present in the channel portion of the semiconductor layer, in which the peak concentration of the second dopant region is present within the lower portion of the semiconductor layer. | 12-27-2012 |
20130043559 | TRENCH FORMATION IN SUBSTRATE - A method includes removing an exposed portion of a first portion of a substrate to define a first trench portion partially defined by the first portion of the substrate and expose a second portion of the substrate, the first portion of the substrate disposed on the second portion of the substrate, the second portion of the substrate including an N+ doped silicon material, and removing a portion the exposed second portion of the substrate with an isotropic etching process to define a second trench portion. | 02-21-2013 |
20130134491 | POLYSILICON/METAL CONTACT RESISTANCE IN DEEP TRENCH - A method of forming a trench structure that includes forming a metal containing layer on at least the sidewalls of a trench, and forming an undoped semiconductor fill material within the trench. The undoped semiconductor fill material and the metal containing layer are recessed to a first depth within the trench with a first etch. The undoped semiconductor fill material is then recessed to a second depth within the trench that is greater than a first depth with a second etch. The second etch exposes at least a sidewall portion of the metal containing layer. The trench is filled with a doped semiconductor containing material fill, wherein the doped semiconductor material fill is in direct contact with the at least the sidewall portion of the metal containing layer. | 05-30-2013 |
20130175665 | THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RATIO DEEP TRENCHES - A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric layer has a dielectric constant that is greater than 30. The dielectric layer is composed of tetragonal phase hafnium oxide with silicon present in the grain boundaries of the tetragonal phase hafnium oxide in an amount ranging from 3 wt. % to 20 wt. %. | 07-11-2013 |
20130189826 | Reduced Corner Leakage in SOI Structure and Method - A structural alternative to retro doping to reduce transistor leakage is provided by providing a liner in a trench, undercutting a conduction channel region in an active semiconductor layer, etching a side, corner and/or bottom of the conduction channel where the undercut exposes semiconductor material in the active layer and replacing the removed portion of the conduction channel with insulator. This shaping of the conduction channel increases the distance to adjacent circuit elements which, if charged, could otherwise induce a voltage and cause a change in back-channel threshold in regions of the conduction channel and narrows and reduces cross-sectional area of the channel where the conduction in the channel is not well-controlled; both of which effects significantly reduce leakage of the transistor. | 07-25-2013 |
20130320422 | FINFET CONTACTING A CONDUCTIVE STRAP STRUCTURE OF A DRAM - A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled with a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A portion of the upper pad layer is removed to define a line cavity. A fin-defining spacer comprising a material different from the material of the dielectric capacitor cap and the upper pad layer is formed around the line cavity by deposition of a conformal layer and an anisotropic etch. The upper pad layer is removed, and the fin-defining spacer is employed as an etch mask to form a semiconductor fin that laterally contacts the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin. | 12-05-2013 |
20140054664 | POLYSILICON/METAL CONTACT RESISTANCE IN DEEP TRENCH - A method of forming a trench structure that includes forming a metal containing layer on at least the sidewalls of a trench, and forming an undoped semiconductor fill material within the trench. The undoped semiconductor fill material and the metal containing layer are recessed to a first depth within the trench with a first etch. The undoped semiconductor fill material is then recessed to a second depth within the trench that is greater than a first depth with a second etch. The second etch exposes at least a sidewall portion of the metal containing layer. The trench is filled with a doped semiconductor containing material fill, wherein the doped semiconductor material fill is in direct contact with the at least the sidewall portion of the metal containing layer. | 02-27-2014 |
20150037941 | FINFET CONTACTING A CONDUCTIVE STRAP STRUCTURE OF A DRAM - A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled with a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A portion of the upper pad layer is removed to define a line cavity. A fin-defining spacer comprising a material different from the material of the dielectric capacitor cap and the upper pad layer is formed around the line cavity by deposition of a conformal layer and an anisotropic etch. The upper pad layer is removed, and the fin-defining spacer is employed as an etch mask to form a semiconductor fin that laterally contacts the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin. | 02-05-2015 |
20150044853 | THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RATIO DEEP TRENCHES - A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric layer has a dielectric constant that is greater than 30. The dielectric layer is composed of tetragonal phase hafnium oxide with silicon present in the grain boundaries of the tetragonal phase hafnium oxide in an amount ranging from 3 wt. % to 20 wt. %. | 02-12-2015 |
Patent application number | Description | Published |
20090309104 | SYSTEMS AND METHODS FOR CREATING CRYSTALLOGRAPHIC-ORIENTATION CONTROLLED poly-SILICON FILMS - In accordance with one aspect, the present invention provides a method for providing polycrystalline films having a controlled microstructure as well as a crystallographic texture. The methods provide elongated grains or single-crystal islands of a specified crystallographic orientation. In particular, a method of processing a film on a substrate includes generating a textured film having crystal grains oriented predominantly in one preferred crystallographic orientation; and then generating a microstructure using sequential lateral solidification crystallization that provides a location-controlled growth of the grains orientated in the preferred crystallographic orientation. | 12-17-2009 |
20110108108 | FLASH LIGHT ANNEALING FOR THIN FILMS - A method of making a crystalline film includes providing a film comprising seed grains of a selected crystallographic surface orientation on a substrate; irradiating the film using a pulsed light source to provide pulsed melting of the film under conditions that provide a mixed liquid/solid phase and allowing the mixed solid/liquid phase to solidify under conditions that provide a textured polycrystalline layer having the selected surface orientation. One or more irradiation treatments may be used. The film is suitable for use in solar cells. | 05-12-2011 |
20110121306 | Systems and Methods for Non-Periodic Pulse Sequential Lateral Solidification - The disclosed systems and method for non-periodic pulse sequential lateral solidification relate to processing a thin film. The method for processing a thin film, while advancing a thin film in a selected direction, includes irradiating a first region of the thin film with a first laser pulse and a second laser pulse and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse. In some embodiments, each pulse provides a shaped beam and has a fluence that is sufficient to melt the thin film throughout its thickness to form molten zones that laterally crystallize upon cooling. In some embodiments, the first and second regions are adjacent to each other. In some embodiments, the first and second regions are spaced a distance apart. | 05-26-2011 |
20130012036 | LINE SCAN SEQUENTIAL LATERAL SOLIDIFICATION OF THIN FILMS - A system for preparing a semiconductor film, the system including: a laser source; optics to form a line beam, a stage to support a sample capable of translation; memory for storing a set of instructions, the instructions including irradiating a first region of the film with a first laser pulse to form a first molten zone, said first molten zone having a maximum width (W | 01-10-2013 |
20130201634 | SINGLE-SCAN LINE-SCAN CRYSTALLIZATION USING SUPERIMPOSED SCANNING ELEMENTS - The disclosure relates to methods and systems for single-scan line-scan crystallization using superimposed scanning elements. In one aspect, the method includes generating a plurality of laser beam pulses from a pulsed laser source, wherein each laser beam pulse has a fluence selected to melt the thin film and, upon cooling, induce crystallization in the thin film; directing a first laser beam pulse onto a thin film using a first beam path; advancing the thin film at a constant first scan velocity in a first direction; and deflecting a second laser beam pulse from the first beam path to a second beam path using an optical scanning element such that the deflection results in the film experiencing a second scan velocity of the laser beam pulses relative to the thin film, wherein the second scan velocity is less than the first scan velocity. | 08-08-2013 |
20130280924 | SYSTEMS AND METHODS FOR NON-PERIODIC PULSE SEQUENTIAL LATERAL SOLIDIFICATION - The disclosed systems and method for non-periodic pulse sequential lateral solidification relate to processing a thin film. The method for processing a thin film, while advancing a thin film in a selected direction, includes irradiating a first region of the thin film with a first laser pulse and a second laser pulse and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse. In some embodiments, each pulse provides a shaped beam and has a fluence that is sufficient to melt the thin film throughout its thickness to form molten zones that laterally crystallize upon cooling. In some embodiments, the first and second regions are adjacent to each other. In some embodiments, the first and second regions are spaced a distance apart. | 10-24-2013 |