Patent application number | Description | Published |
20110247872 | DEBOND INTERCONNECT STRUCTURES - The present subject matter relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming an interconnect that has a portion thereof which becomes debonded from the microelectronic device during cooling after attachment to an external device. The debonded portion allows the interconnect to flex and absorb stress. | 10-13-2011 |
20120038379 | PROBES FORMED FROM SEMICONDUCTOR REGION VIAS - Embodiments of the invention describe forming a set of probes using semiconductor regions each including a plurality of vias. A first set of probe segments may be formed from a first set of vias on a first semiconductor region. A second set of probe segments may be formed from a second set of vias on a second semiconductor region and bonded to the first set of probe segments. At least one spring comprising a dielectric material may be formed to couple the first set of probe segments, while a set of metal tips disposed on the second set of probe segments. | 02-16-2012 |
20130000117 | LIQUID METAL INTERCONNECTS - Embodiments of the invention provide methods for forming electrical connections using liquid metals. Electrical connections that employ liquid metals are useful for testing and validation of semiconductor devices. Electrical connections are formed between the probes of a testing interface and the electronic interface of a device under test through a liquid metal region. In embodiments of the invention, liquid metal interconnects are comprised of gallium or liquid metal alloys of gallium. The use of liquid metal contacts does not require a predetermined amount of force be applied in order to reliably make an electrical connection. | 01-03-2013 |
20140029150 | INTERPOSER TO REGULATE CURRENT FOR WAFER TEST TOOLING - An interposer is described to regulate the current in wafer test tooling. In one example, the interposer includes a first connection pad to couple to automated test equipment and a second connection pad to couple to a device under test. The interposer further includes an overcurrent limit circuit to connect the first and second connection pads and to disconnect the first and second connection pads when the current between the first and second connection pads is over a predetermined amount. | 01-30-2014 |
20140092574 | INTEGRATED VOLTAGE REGULATORS WITH MAGNETICALLY ENHANCED INDUCTORS - Magnetically enhanced inductors integrated with microelectronic devices at chip-level. In embodiments, magnetically enhanced inductors include a through substrate vias (TSVs) with fill metal to carry an electrical current proximate to a magnetic layer disposed on a substrate through which the TSV passes. In certain magnetically enhanced inductor embodiments, a TSV fill metal is disposed within a magnetic material lining the TSV. In certain magnetically enhanced inductor embodiments, a magnetically enhanced inductor includes a plurality of interconnected TSVs disposed proximate to a magnetic material layer on a side of a substrate. In embodiments, voltage regulation circuitry disposed on a first side of a substrate is integrated with one or more magnetically enhanced inductors utilizing a TSV passing through the substrate. In further embodiments, integrated circuitry on a same substrate as the magnetically enhanced inductor, or on another substrate stacked thereon, completes the VR and/or is powered by the VR circuitry. | 04-03-2014 |
20140106560 | DEBOND INTERCONNECT STRUCTURES - The present subject matter relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming an interconnect that has a portion thereof which becomes debonded from the microelectronic device during cooling after attachment to an external device. The debonded portion allows the interconnect to flex and absorb stress. | 04-17-2014 |
20140117559 | PROCESS AND MATERIAL FOR PREVENTING DELETERIOUS EXPANSION OF HIGH ASPECT RATIO COPPER FILLED THROUGH SILICON VIAS (TSVS) - Techniques are disclosed for forming through-silicon vias (TSVs) implementing a negative thermal expansion (NTE) material such as zirconium tungstate (ZrW | 05-01-2014 |
20150008950 | MANUFACTURING ADVANCED TEST PROBES - Embodiments relate to the formation of test probes. One method includes providing a bulk sheet of an electrically conductive material. A laser is used to cut through the bulk sheet in a predetermined pattern to form a test probe. Other embodiments are described and claimed. | 01-08-2015 |