Patent application number | Description | Published |
20100305884 | METHODS FOR DETERMINING THE QUANTITY OF PRECURSOR IN AN AMPOULE - Methods of determining an amount of precursor in an ampoule have been provided herein. In some embodiments, a method for determining an amount of solid precursor in an ampoule may include determining a first pressure in an ampoule having a first volume partially filled with a solid precursor; flowing an amount of a first gas into the ampoule to establish a second pressure in the ampoule; determining a remaining portion of the first volume based on a relationship between the first pressure, the second pressure, and the amount of the first gas flowed into the ampoule; and determining the amount of solid precursor in the ampoule based on the first volume and the remaining portion of the first volume. | 12-02-2010 |
20110168093 | METHODS AND APPARATUS FOR INCORPORATING NITROGEN IN OXIDE FILMS - In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided. | 07-14-2011 |
20110263115 | NMOS METAL GATE MATERIALS, MANUFACTURING METHODS, AND EQUIPMENT USING CVD AND ALD PROCESSES WITH METAL BASED PRECURSORS - Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX | 10-27-2011 |
20120202357 | In Situ Vapor Phase Surface Activation Of SiO2 - Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water above the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia. | 08-09-2012 |
20120220116 | Dry Chemical Cleaning For Semiconductor Processing - A deposition process including a dry etch process, followed by a deposition process of a high-k dielectric is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is energized to form a plasma of reactive gas which reacts with an oxide on the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose a substrate surface. The substrate surface is substantially free of oxides. Deposition is then used to form a layer on the substrate surface. | 08-30-2012 |
20130149468 | METHODS AND APPARATUS FOR INCORPORATING NITROGEN IN OXIDE FILMS - In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided. | 06-13-2013 |
20140120712 | NMOS METAL GATE MATERIALS, MANUFACTURING METHODS, AND EQUIPMENT USING CVD AND ALD PROCESSES WITH METAL BASED PRECURSORS - Embodiments provide methods for depositing metal-containing materials. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. A method for processing a substrate is provided which includes depositing a dielectric material forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX | 05-01-2014 |
20150069476 | Engineering Induced Tunable Electrostatic Effect - Backside illuminated sensors and methods of manufacture are described. Specifically, a backside illuminated sensor with a dipole modulating layer near the photodiode is described. | 03-12-2015 |