Pal
Annette Pal, Brisbane AU
Patent application number | Description | Published |
---|---|---|
20140149039 | Method of Surveying and a Surveying System - A surveying system | 05-29-2014 |
Annette Bronwyn Pal, South Perth AU
Patent application number | Description | Published |
---|---|---|
20130261873 | APPARATUS AND METHOD FOR OBTAINING INFORMATION FROM DRILLED HOLES FOR MINING - Apparatus and method for obtaining information from drilled holes for mining A mobile vehicle ( | 10-03-2013 |
Annika Viola Pal, Partille SE
Patent application number | Description | Published |
---|---|---|
20100170419 | SILICA-BASED SOLS - The invention relates to a sol containing silica-based particles having an axial ratio of at least about 10 and specific surface area of at least about 600 m2/g. The invention further relates to a sol containing silica-based particles having an axial ratio of at least about 10 and S-value up to about 25. The invention further relates to a sol containing silica-based particles having an axial ratio of at least about 10 and a specific surface area of at least about 400 m2/g, wherein the silica-based particles are surface-modified. The invention further relates to a sol containing silica-based particles having a viscosity of at least 50 cP and silica content of at least about 3% by weight, wherein the silica-based particles have a specific surface area of at least about 400 m2/g. The invention further relates to a process for producing the aqueous silica-based sol according to the invention, a sol containing silica-based particles obtainable by the process, use of the sol containing silica-based particles as a flocculating agent. The invention further relates to a process for producing paper in which the sol containing silica-based particles is used as a drainage and retention aid. | 07-08-2010 |
Boaz Pal, Tel-Aviv IL
Patent application number | Description | Published |
---|---|---|
20100099687 | TADALAFIL SOLID COMPOSITES - This invention relates to oral pharmaceutical compositions suitable for making pharmaceutical formulations for oral administration that provide for the rapid dissolution of the phosphodiesterase 5 inhibitor tadalafil. In particular, the pharmaceutical compositions comprise solid composites of tadalafil exhibiting high solubility and rate of dissolution. The invention further relates to methods of preparing these pharmaceutical formulations and the use of such pharmaceutical formulations for treating diseases associated with PDE5 inhibitors. | 04-22-2010 |
20100317002 | METHODS AND KITS FOR DIAGNOSING LUNG CANCER - Provided is a method of identifying a genetically abnormal cell in a sputum sample, the method comprising: (a) staining a sputum sample using a morphological stain so as to identify a lower airway tract cell or lung cell in the sputum sample; and (b) staining the sputum sample using fluorescent in situ hybridization (FISH) so as to identify in the lower airway tract cell or lung cell a genetic abnormality in at least one of human chromosome 3p22.1 and 10q22-23, thereby identifying the genetically abnormal cell in the sputum sample. Also provided are methods and kits of diagnosing lung cancer by detecting a presence of genetically abnormal cells above a predetermined threshold in a sputum sample. | 12-16-2010 |
Deb Kumar Pal, Sarawak MY
Patent application number | Description | Published |
---|---|---|
20120161276 | SEMICONDUCTOR DEVICE COMPRISING AN ISOLATION TRENCH INCLUDING SEMICONDUCTOR ISLANDS - The present invention provides semiconductor devices and methods for fabricating the same, in which superior dielectric termination of drift regions is accomplished by a plurality of intersecting trenches with intermediate semiconductor islands. Thus, a deep trench arrangement can be achieved without being restricted by the overall width of the isolation structure. | 06-28-2012 |
Deb Kumar Pal, Kuching MY
Patent application number | Description | Published |
---|---|---|
20110198690 | TRANSISTOR - A Metal Oxide Semiconductor (MOS) transistor comprising: a source; a gate; and a drain, the source, gate and drain being located in or on a well structure of a first doping polarity located in or on a substrate; wherein at least one of the source and the drain comprises a first structure comprising: a first region forming a first drift region, the first region being of a second doping polarity opposite the first doping polarity; a second region of the second doping polarity in or on the first region, the second region being a well region and having a doping concentration which is higher than the doping concentration of the first region; and a third region of the second doping polarity in or on the second region. Due to the presence of the second region the transistor may have a lower ON resistance when compared with a similar transistor which does not have the second region. The breakdown voltage may be influenced only to a small extent. | 08-18-2011 |
20120126377 | SEMICONDUCTOR DEVICE - A semiconductor device comprising: a p or p+ doped portion; an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion; an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and said at least one doped portion meet; and at least one additional portion which is arranged for significantly reducing the variation of the electric field strength in said region when a voltage difference is applied between the doped portions. | 05-24-2012 |
20120319193 | MANUFACTURING OF A SEMICONDUCTOR DEVICE AND CORRESPONDING SEMICONDUCTOR DEVICE - The disclosed method of manufacturing ( | 12-20-2012 |
20130093015 | HIGH VOLTAGE MOS TRANSISTOR - A high voltage metal oxide semiconductor (HVMOS) transistor ( | 04-18-2013 |
20130320485 | SEMICONDUCTOR DEVICE - An SOI or PSOI device including a device structure having a plurality of doped semiconductor regions. One or more of the doped semiconductor regions is in electrical communication with one or more electrical terminals. The device further includes an insulator layer located between a bottom surface of the device structure and a handle wafer. The device has an insulator trench structure located between a side surface of the device structure and a lateral semiconductor region located laterally with respect to the device structure. The insulator layer and the insulator trench structure are configured to insulate the device structure from the handle wafer and the lateral semiconductor region, and the insulator trench structure includes a plurality of insulator trenches. | 12-05-2013 |
20130320511 | SEMICONDUCTOR DEVICE - A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes at least one termination portion provided adjacent to the drift portion. The at least one termination portion comprises a Super Junction structure. | 12-05-2013 |
Deb Kumar Pal, London GB
Patent application number | Description | Published |
---|---|---|
20110306045 | Method for Confirming a Diagnosis of Rolandic Epilepsy - A strong association between variants in Elongator Protein Complex 4, (ELP4) (specifically single nucleotide polymorphisms, SNPs) at the 11p13 locus on chromosome 11 and the centrotemporal sharp wave trait (CTS) has been discovered, which association has diagnostic significance for rolandic epilepsy. It has further been discovered that the 11p13 locus has a pleiotropic role in the development of speech motor praxis and CTS, which supports a neurodevelopmental origin for classic rolandic epilepsy (RE). | 12-15-2011 |
Gabor Pal, Budapest HU
Patent application number | Description | Published |
---|---|---|
20120214748 | NOVEL PEPTIDES, PROCESS FOR PREPARATION THEREOF, AND USE THEREOF - The invention relates to peptides of the general formula (I) GX | 08-23-2012 |
Madan Pal, Hambridge GB
Patent application number | Description | Published |
---|---|---|
20150369287 | STRUCTURE AND FABRICATION METHOD OF A MULTILAYER OVERLAY FOR PLAIN BEARINGS - Provided is a plain bearing including a backing layer, a bearing metal layer, an optional intermediate layer and an overlay. The overlay includes a plurality of sub-layers disposed one on top of the other, which sub-layers include two or more relatively soft sub-layers and one or more relatively hard sub-layer. The soft and hard sub-layers are arranged alternately with respect to one another. Each soft sub-layer includes a metal or metal alloy, and each hard sub-layer includes one or more intermetallic compound. | 12-24-2015 |
Maninder Pal, Coventry GB
Patent application number | Description | Published |
---|---|---|
20120007744 | LEAK DETECTOR - A leak detector for detecting and locating leaks in a water supply pipe of plastics, the leak detector comprising a first sensor at a first position arranged to detect a leak signal travelling along a pipe, a second sensor arranged to detect a leak signal travelling along the pipe at a second position spaced from the first position, and a processing device adapted to receive the signals from the first sensor and the second sensor. The processing device may be adapted to determine the velocity of the signals from characteristics of the leak signals. The processing device is adapted to use the velocity and distance between the first sensor and the second sensor to determine the location of a leak. The characteristics may be the relationship between the phase and frequency of the leak signals. | 01-12-2012 |
Robert Pal, Durham GB
Patent application number | Description | Published |
---|---|---|
20080312431 | Responsive Luminescent Lanthanide Complexes - The invention provides a compound comprising a xanthone or thiaxanthone sensitising moiety, capable of coordinating to a lanthanide ion by the nitrogen atom of an integral pyridyl group or a related group able to bind a lanthanide ion. | 12-18-2008 |
20110287558 | RESPONSIVE LUMINESCENT LANTHANIDE COMPLEXES - A compound of formula (I) is provided: | 11-24-2011 |
20140179015 | RESPONSIVE LUMINESCENT LATHANIDE COMPLEXES - The invention provides a compound of formula (I): | 06-26-2014 |
Rohit Pal, Dresden DE
Patent application number | Description | Published |
---|---|---|
20120156864 | Formation of a Channel Semiconductor Alloy by a Nitride Hard Mask Layer and an Oxide Mask - When forming sophisticated high-k metal gate electrode structures, the uniformity of the device characteristics may be enhanced by growing a threshold adjusting semiconductor alloy on the basis of a hard mask regime, which may result in a less pronounced surface topography, in particular in densely packed device areas. To this end, in some illustrative embodiments, a deposited hard mask material may be used for selectively providing an oxide mask of reduced thickness and superior uniformity. | 06-21-2012 |
20120235245 | SUPERIOR INTEGRITY OF HIGH-K METAL GATE STACKS BY REDUCING STI DIVOTS BY DEPOSITING A FILL MATERIAL AFTER STI FORMATION - When forming sophisticated semiconductor devices on the basis of high-k metal gate electrode structures, which are to be provided in an early manufacturing stage, the encapsulation of the sensitive gate materials may be improved by reducing the depth of or eliminating recessed areas that are obtained after forming sophisticated trench isolation regions. To this end, after completing the STI module, an additional fill material may be provided so as to obtain the desired surface topography and also preserve superior material characteristics of the trench isolation regions. | 09-20-2012 |
20120295420 | SEMICONDUCTOR DEVICES WITH REDUCED STI TOPOGRAPHY BY USING CHEMICAL OXIDE REMOVAL - A thermal oxide may be removed in semiconductor devices prior to performing complex manufacturing processes, such as forming sophisticated gate electrode structures, by using a gaseous process atmosphere instead of a wet chemical etch process, wherein the masking of specific device regions may be accomplished on the basis of a resist mask. | 11-22-2012 |
20120306027 | TRANSISTORS WITH EMBEDDED STRAIN-INDUCING MATERIAL FORMED IN CAVITIES PROVIDED BY AN OXIDIZING ETCH PROCESS - When forming sophisticated semiconductor devices including transistors with sophisticated high-k metal gate electrode structures and a strain-inducing semiconductor alloy, transistor uniformity and performance may be enhanced by providing superior growth conditions during the selective epitaxial growth process. To this end, a semiconductor material may be preserved at the isolation regions in order to avoid the formation of pronounced shoulders. Furthermore, in some illustrative embodiments, additional mechanisms are implemented in order to avoid undue material loss, for instance upon removing a dielectric cap material and the like. | 12-06-2012 |
20130032893 | SEMICONDUCTOR DEVICE COMPRISING METAL GATE ELECTRODE STRUCTURES AND NON-FETS WITH DIFFERENT HEIGHT BY EARLY ADAPTATION OF GATE STACK TOPOGRAPHY - Gate height scaling in sophisticated semiconductor devices may be implemented without requiring a redesign of non-transistor devices. To this end, the semiconductor electrode material may be adapted in its thickness above active regions and isolation regions that receive the non-transistor devices. Thereafter, the actual patterning of the adapted gate layer stack may be performed so as to obtain gate electrode structures of a desired height for improving, in particular, AC performance without requiring a redesign of the non-transistor devices. | 02-07-2013 |
20130115773 | Prevention of ILD Loss in Replacement Gate Technologies by Surface Treatmen - When forming sophisticated high-k metal gate electrode structures on the basis of a replacement gate approach, pronounced loss of the interlayer dielectric material may be avoided by inserting at least one surface modification process, for instance in the form of a nitridation process. In this manner, leakage paths caused by metal residues formed in the interlayer dielectric material may be significantly reduced. | 05-09-2013 |
Sukdeb Pal, Seoul KR
Patent application number | Description | Published |
---|---|---|
20120208025 | SILVER/POLYDIGUANIDE COMPLEX, PREPARATION METHOD THEREOF, AND ANTIBACTERIAL COMPOSITION CONTAINING THE SAME AS AN ACTIVE INGREDIENT - The present invention relates to a silver/polydiguanide complex and derivatives thereof including silver and polydiguanide having at least two biguanide moieties, wherein the silver is stabilized in an oxidation state of an integer of 0 to 4, a mole ratio between the silver and the polydiguanide is 1: 1-4, an average particle diameter of the complex is micrometer or nanometer, and zeta potential of the complex is greater than or equal to zero, a preparation method thereof, and an antibacterial composition for burns or wounds treatment including the same as an active ingredient. A silver/polydiguanide complex according to the present invention is different from conventional silver/polydiguanide complexes in carbon, hydrogen, and nitrogen contents as well as in structure of silver and polydiguanide, and solubility, is a material that exhibits a very good antibacterial activity due to a much lower minimal inhibitory concentration (MIC) value by 10 to 100 folds or more compared to silver sulfadiazine which is a conventional therapeutic agent for burns, and may be usefully used as an antibacterial composition for burns or wounds treatment. | 08-16-2012 |