Ota, Kanagawa
Chiharu Ota, Kanagawa JP
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20110059597 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device capable of realizing a high yield of a large-scale semiconductor device even when a silicon carbide semiconductor including a defect is used is provided. The method of manufacturing a semiconductor device includes: a step of epitaxially growing a silicon carbide semiconductor layer on a silicon carbide semiconductor substrate; a step of polishing a surface of the silicon carbide semiconductor layer; a step of ion-implanting impurities into the silicon carbide semiconductor layer after the step of polishing; a step of performing heat treatment to activate the impurities; a step of forming a first thermal oxide film on the surface of the silicon carbide semiconductor layer after the step of performing heat treatment; a step of chemically removing the first thermal oxide film; and a step of forming an electrode layer on the silicon carbide semiconductor film. | 03-10-2011 |
20120056195 | SEMICONDUCTOR DEVICE - One embodiment of a semiconductor device includes: a silicon carbide substrate including first and second principal surfaces; a first-conductive-type silicon carbide layer on the first principal surface; a second-conductive-type first silicon carbide region at a surface of the first silicon carbide layer; a first-conductive-type second silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type third silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type fourth silicon carbide region formed between the first silicon carbide region and the second silicon carbide region, and having an impurity concentration higher than that of the first silicon carbide region; a gate insulator; a gate electrode formed on the gate insulator; an inter-layer insulator; a first electrode connected to the second silicon carbide region and the third silicon carbide region; and a second electrode on the second principal surface. | 03-08-2012 |
20120056196 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device according to an embodiment includes a first-conductive-type semiconductor substrate; a first-conductive-type first semiconductor layer formed on the semiconductor substrate, and having an impurity concentration lower than that of the semiconductor substrate; a second-conductive-type second semiconductor layer epitaxially formed on the first semiconductor layer; and a second-conductive-type third semiconductor layer epitaxially formed on the second semiconductor layer, and having an impurity concentration higher than that of the second semiconductor layer. The semiconductor device also includes a recess formed in the third semiconductor layer, and at least a corner portion of a side face and a bottom surface is located in the second semiconductor layer. The semiconductor device also includes a first electrode in contact with the third semiconductor layer; a second electrode connected to the first electrode while being in contact with the second semiconductor layer at the bottom surface of the recess; and a third electrode in contact with a lower surface of the semiconductor substrate. | 03-08-2012 |
20120056198 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device according to an embodiment includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type, a first electrode and a second electrode. The first semiconductor region is formed on at least a part of the first semiconductor layer formed on the semiconductor substrate. The second semiconductor region is formed on another part of the first semiconductor layer to reach an inside of the first semiconductor layer and having an impurity concentration higher than that of the first semiconductor region. The first electrode is formed on the second semiconductor region and a third semiconductor regions formed in a part of the first semiconductor region. The second electrode is formed to be in contact with a rear surface of the semiconductor substrate. | 03-08-2012 |
20130237042 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device of an embodiment includes: preparing a silicon carbide substrate of a hexagonal system; implanting ions into the silicon carbide substrate; forming, by epitaxial growth, a silicon carbide film on the silicon carbide substrate into which the ions have been implanted; and forming a pn junction region in the silicon carbide film. | 09-12-2013 |
20140283736 | VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD - A vapor phase growth apparatus of an embodiment includes a reaction chamber, a first gas supply channel that supplies a Si source gas to the reaction chamber, a second gas supply channel that supplies a C source gas to the reaction chamber, a third gas supply channel that supplies an n-type impurity source gas to the reaction chamber, a fourth gas supply channel that supplies a p-type impurity source gas to the reaction chamber, and a control unit that controls the amounts of the n-type impurity and p-type impurity source gases at a predetermined ratio, and introduces the n-type impurity and p-type impurity source gases into the reaction chamber. Where the p-type impurity is an element A and the n-type impurity is an element D, the element A and the element D form a combination of Al, Ga, or In and N, and/or a combination of B and P. | 09-25-2014 |
20140284619 | SIC EPITAXIAL WAFER AND SEMICONDUCTOR DEVICE - An SiC epitaxial wafer of an embodiment includes, an SiC substrate, and a p-type first SiC epitaxial layer that is formed on the SiC substrate and contains a p-type impurity and an n-type impurity. An element A and an element D being a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and P (phosphorus) when the p-type impurity is the element A and the n-type impurity is the element D. The ratio of the concentration of the element D to the concentration of the element A in the combination(s) is higher than 0.33 but lower than 1.0. | 09-25-2014 |
20140284620 | SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment includes an n-type SiC substrate, an n-type SiC layer formed on the SiC substrate; a p-type first SiC region formed in the surface of the SiC layer and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D being a combination of Al, Ga, or In and N, and/or a combination of B and P, the ratio of the concentration of the element D to the concentration of the element A in the combination(s) being higher than 0.33 but lower than 0.995, the concentration of the element A forming part of the combination(s) being not lower than 1×10 | 09-25-2014 |
20140284621 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes an n-type SiC impurity region containing a p-type impurity and an n-type impurity. Where the p-type impurity is an element A and the n-type impurity is an element D, the element A and the element D form a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and P (phosphorus). The ratio of the concentration of the element A to the concentration of the element D in the above combination is higher than 0.40 but lower than 0.95, and the concentration of the element D forming the above combination is not lower than 1×10 | 09-25-2014 |
20140284622 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes a p-type SiC impurity region containing a p-type impurity and an n-type impurity. Where the p-type impurity is an element A and the n-type impurity is an element D, the element A and the element D form a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and P (phosphorus). The ratio of the concentration of the element D to the concentration of the element A in the above combination is higher than 0.33 but lower than 0.995, and the concentration of the element A forming part of the above combination is not lower than 1×10 | 09-25-2014 |
20140284623 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes, an n-type SiC substrate that has first and second faces, and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D being a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and P (phosphorus), the ratio of the concentration of the element A to the concentration of the element D in the combination(s) being higher than 0.40 but lower than 0.95, the concentration of the element D forming the combination(s) being not lower than 1×10 | 09-25-2014 |
20140335682 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device according to an embodiment includes a first-conductive-type semiconductor substrate; a first-conductive-type first semiconductor layer formed on the semiconductor substrate, and having an impurity concentration lower than that of the semiconductor substrate; a second-conductive-type second semiconductor layer epitaxially formed on the first semiconductor layer; and a second-conductive-type third semiconductor layer epitaxially formed on the second semiconductor layer, and having an impurity concentration higher than that of the second semiconductor layer. The semiconductor device also includes a recess formed in the third semiconductor layer, and at least a corner portion of a side face and a bottom surface is located in the second semiconductor layer. The semiconductor device also includes a first electrode in contact with the third semiconductor layer; a second electrode connected to the first electrode while being in contact with the second semiconductor layer at the bottom surface of the recess; and a third electrode in contact with a lower surface of the semiconductor substrate. | 11-13-2014 |
20160005820 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes, an n-type SiC substrate that has first and second faces, and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D being a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and P (phosphorus), the ratio of the concentration of the element A to the concentration of the element Din the combination (s) being higher than 0.40 but lower than 0.95, the concentration of the element D forming the combination (s) being not lower than 1×10 | 01-07-2016 |
Katsuhiro Ota, Kanagawa JP
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20090165824 | Cleaning apparatus for cleaning component part of magnetic disk drive and cleaning method of cleaning component part of magnetic disk drive - Embodiments of the present invention improve the efficiency of a cleaning process for cleaning a component part of a magnetic disk drive in a magnetic disk drive manufacturing line. According to one embodiment, a magnetic disk part cleaning apparatus is included in a head stack assembly (HSA) cleaning line for cleaning head stack assemblies of magnetic disk drives included in a magnetic disk drive manufacturing line. The magnetic disk part cleaning apparatus is disposed between a HSA assembly line for assembling a head stack assembly, and head disk assembly (HDA) assembly line for assembling a head disk assembly including the head stack assembly and is connected directly to at least either of the HSA assembly line and the HDA assembly line. | 07-02-2009 |
Kazuki Ota, Kanagawa JP
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20130292690 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a high electron mobility transistor, with a normally-off operation maintained, on-resistance can be sufficiently reduced, so that the performance of a semiconductor device including the high electron mobility transistor is improved. Between a channel layer and an electron supply layer, a spacer layer whose band gap is larger than the band gap of the electron supply layer is provided. Thereby, due to the fact that the band gap of the spacer layer is large, a high potential barrier (electron barrier) is formed in the vicinity of an interface between the channel and the electron supply layer. | 11-07-2013 |
20140084300 | SEMICONDUCTOR DEVICE - A field effect transistor includes a substrate and a semiconductor layer provided on the substrate, wherein the semiconductor layer includes a lower barrier layer provided on the substrate, Ga-face grown, lattice relaxed, and having a composition In | 03-27-2014 |
20140209922 | SEMICONDUCTOR DEVICE - A high electron mobility transistor having a channel layer, electron supply layer, source electrode, and drain electrode is included so as to have a cap layer formed on the electron supply layer between the source and drain electrodes and having an inclined side surface, an insulating film having an opening portion on the upper surface of the cap layer and covering the side surface thereof, and a gate electrode is formed in the opening portion and extending, via the insulating film, over the side surface of the cap layer on the drain electrode side. The gate electrode having an overhang on the drain electrode side can reduce the peak electric field. | 07-31-2014 |
20150076511 | SEMICONDUCTOR DEVICE - A field effect transistor includes a substrate and a semiconductor layer provided on the substrate, wherein the semiconductor layer includes a lower barrier layer provided on the substrate, Ga-face grown, lattice relaxed, and having a composition In | 03-19-2015 |
20160079409 | SEMICONDUCTOR DEVICE - A semiconductor device including a field effect transistor including a substrate, a lower barrier layer provided on the substrate, a channel layer provided on the lower barrier layer, an electron supplying layer provided on the channel layer, a source electrode and a drain electrode provided on the electron layer, and a gate electrode provided between the source electrode and the drain electrode. The lower barrier layer includes a composition of In | 03-17-2016 |
Kazunobu Ota, Kanagawa JP
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20110102620 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, CAMERA, AND ELECTRONIC DEVICE - A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode. | 05-05-2011 |
20110284976 | SOLID-STATE IMAGE PICKUP APPARATUS, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE - A solid-state image pickup apparatus includes a substrate, a solid-state image pickup device, and a Micro Electro Mechanical Systems (MEMS) device. The solid-state image pickup device and the MEMS device are configured to be formed on the same substrate. | 11-24-2011 |
20150041871 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, CAMERA, AND ELECTRONIC DEVICE - A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode. | 02-12-2015 |
Kazuo Ota, Kanagawa JP
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20090102978 | VIDEO SIGNAL TRANSMISSION UNIT - A repeater unit includes an input circuit having an input terminal that can be connected to output of an upstream repeater unit through a signal cable for inputting a video signal from the input terminal; an output circuit having an output terminal that can be connected to input of a downstream repeater unit through a signal cable for outputting a video signal to the output terminal; and a selection circuit that can be connected to a video signal output device for outputting a video signal and outputs the video signal input from the video signal output device to the output circuit. The input circuit and the output circuit have termination resistors matched with each other. When the repeater units are daisy-chained, termination matching is conducted. | 04-23-2009 |
Ken-Ichiro Ota, Kanagawa JP
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20100216057 | CATALYST CARRIER AND FUEL CELL USING THE SAME - A catalyst carrier, being characterized in that a catalyst metal for promoting an oxidation-reduction reaction is carried on a vapor-grown carbon fiber having an average outer diameter of from 2 nm to 500 nm, which has been subjected to a crushing treatment so as to have a BET specific surface area of from 4 m | 08-26-2010 |
20100279202 | ELECTRODE CATALYST AND OXYGEN REDUCTION ELECTRODE FOR CATHODE USING THE SAME - An electrode catalyst for an oxygen reduction electrode for use in a cathode of a polymer electrolyte fuel cell, produced by oxidizing ZrCN, wherein ZrCN and ZrO | 11-04-2010 |
Kensuke Ota, Kanagawa JP
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20120146053 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to an embodiment includes a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film, first gate sidewalls formed on both sides of the gate electrode, and a source/drain semiconductor layer formed on the semiconductor substrate to sandwich the first gate sidewalls with the gate electrode. Further, second gate sidewalls are provided on the first gate sidewalls and the source/drain semiconductor layer at both sides of the gate electrode, wherein the boundary of each of the second gate sidewalls with each of the first gate sidewalls is terminated at the side surface of the gate electrode, and each of the second gate sidewalls has a smaller Young's modulus and a lower dielectric constant than each of the first gate sidewalls. | 06-14-2012 |
20130240828 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to embodiments includes a semiconductor substrate, a buried insulating layer which is formed on the semiconductor substrate, a semiconductor layer which is formed on the buried insulating layer and includes a narrow portion and two wide portions which are larger than the narrow portion in width and are respectively connected to one end and the other end of the narrow portion, a gate insulating film which is formed on a side surface of the narrow portion, and a gate electrode formed on the gate insulating film. The impurity concentration of the semiconductor substrate directly below the narrow portion is higher than the impurity concentration of the narrow portion, and the impurity concentration of the semiconductor substrate directly below the narrow portion is higher than the impurity concentration of the semiconductor substrate directly below the wide portion. | 09-19-2013 |
Kohei Ota, Kanagawa JP
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20150247936 | RADIOGRAPHIC IMAGING DEVICE - In the radiographic imaging device, a portion of a second effective imaging region at a first side or a second side of a sensor unit of a second radiation detection panel, and a portion of a first effective imaging region at a third side or a fourth side of the sensor unit of a first radiation detection panel, are overlapped in a radiation irradiating direction. A portion of a second effective imaging region at the third side or the fourth side of the sensor unit of the second radiation detection panel, and a portion of a third effective imaging region at the third side or the fourth side of the sensor unit of the third radiation detection panel, are overlapped in the radiation irradiating direction. The second radiation detection panel is disposed at a side opposite the radiation irradiating section side of the first radiation detection panel and the third radiation detection panel. | 09-03-2015 |
Kyohei Ota, Kanagawa JP
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20110318725 | CELL CULTURE METHOD, CELL CULTURE DEVICE, METHOD FOR COUNTING SUBSJECT MATTERS TO BE COUNTED IN CONTAINER AND DEVICE FOR COUNTING - Cell aggregate formation control and cell aggregate disintegration control are carried out with respect to cells in a culture container to increase cell proliferation efficiency. The number of the cells in the culture container is counted without disassembly of a culture system and irrespective of the density of the cells. | 12-29-2011 |
20130230914 | CULTURE CONTAINER FOR ADHERENT CELLS AND METHOD FOR PRODUCING CULTURE CONTAINER FOR ADHERENT CELLS - A culture bag for culturing adherent cells is provided without requiring a highly clean production environment and a complex production step such as a masking step. An adherent cell culture vessel that is formed of a polyolefin is configured so that part or the entirety of the inner surface of the culture vessel has a static water contact angle of 95° or more, and has an advancing contact angle and a receding contact angle that satisfy the inequality “advancing contact angle−receding contact angle>25°” when water runs down along the inner surface. | 09-05-2013 |
20140335600 | CELL COLLECTION METHOD - A method for collecting cells that have been cultured by using a cell culture kit in which, at least, a culture container for cultivating cells, a cell collection container for collecting cells after cultivation and a waste liquid container for collecting a culture medium after cultivation are linked to one another through a conduit, the method including transferring a culture supernatant that has been cultured from the culture container to the waste liquid container, transferring a concentrated suspension of cells from the culture container to the cell collection container, returning part of the culture supernatant discharged in the waste liquid container to the culture container and allowing cells remaining in the culture container to be suspended in a suspension of cells, and transferring again a suspension of cells in which remaining cells are suspended from the culture container to the cell collection container. | 11-13-2014 |
Makoto Ota, Kanagawa JP
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20100119861 | HIGH-STRENGTH WELDED STEEL PIPE INCLUDING WELD METAL HAVING HIGH COLD-CRACKING RESISTANCE AND METHOD FOR MANUFACTURING THE SAME - A high-strength steel pipe having a tensile strength of 800 MPa or more that includes a weld metal having high cold-cracking resistance and high low-temperature toughness is provided. The high-strength steel pipe is a high-strength welded steel pipe in which the welded steel pipe is manufactured by double one layer submerged arc welding performed on an internal surface and an external surface of a base metal, both the base metal of the welded steel pipe and a weld metal have a tensile strength of 800 MPa or more, the weld metal contains C: 0.04% to 0.09% by mass, Si: 0.32% to 0.50% by mass, Mn: 1.4% to 2.0% by mass, Cu: less than 0.5% by mass, Ni: more than 0.9% by mass but not more than 4.2% by mass, Mo: 0.4% to 1.5% by mass, Cr: less than 0.5% by mass, V: less than 0.2% by mass, and the remainder of Fe and incidental impurities, and CS values calculated from the weld metal components using the equation CS=5.1+1.4[Mo]−[Ni]−0.6[Mn]−36.3[C] are equal to zero or more at both the internal surface and the external surface. | 05-13-2010 |
Manabu Ota, Kanagawa JP
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20110264766 | INFORMATION COLLECTING SYSTEM, COMMUNICATION TERMINAL AND INFORMATION COLLECTING METHOD - Information transmission requests are delivered to communication terminals existing in a specific area, to collect information held in the communication terminals, without inducing congestion. In an information collecting device included in an information collecting system, terminal information and capacity information are acquired based on base station identifying information, and information of an information amount of collected information is further acquired based on a collected information type that identifies a type of the collected information. In an information collection controlling unit, transmission timing information, designating the timing at which a capacity of performing communication via a base station is not exceeded, is generated based on the terminal information, the information-amount information and the capacity information, and an information transmission request including the transmission timing information is delivered to a communication terminal. | 10-27-2011 |
20120005288 | MOBILE TERMINAL, MAIL RETURN METHOD, AND SERVER - The present invention can reduce anxiety or discomfort of a sender of a mail, even when a user of a mobile terminal having received the mail is unaware of being in a state that sending a reply mail is impossible. A mobile terminal according to the present invention includes: transmitting and receiving unit for receiving an incoming mail from a transmitter; state determining unit for acquiring information indicating a state of a user and determining based on the information indicating the state of the user whether sending a reply mail is possible or not when the mail transmitting and receiving unit receives the incoming mail; mail creating unit for creating a reply mail with a given content when the state determining unit determines that sending a reply mail is impossible; and mail transmitting unit for transmitting the reply mail created by the mail creating unit to the transmitter. With this configuration, it is determined based on the state of the user at the time of receiving a mail whether sending a reply mail is possible or not and when sending a reply mail is determined to be impossible, a mail with a given content can be automatically sent to the transmitter. | 01-05-2012 |
20120096097 | COMMUNICATION TERMINAL AND MAIL RETURN METHOD - An object of the present invention is suppressing a mail transmission loop between the communication terminals. A communication terminal | 04-19-2012 |
Masahiro Ota, Kanagawa JP
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20110014307 | BLOOD VESSEL MATURATION, NORMALIZATION OR STABILIZATION AGENT AND WRINKLE PREVENTER/IMPROVER - A vascular maturation, normalization or stabilization agent, or a Tie-2 activation agent, is provided comprising an extract derived from a plant belonging to the genus | 01-20-2011 |
20110091584 | LYMPHATIC VESSEL STABILIZER - Provided is a lymphatic vessel stabilizer composed of Tie2 activator. The Tie2 activator is preferably at least one type selected from the group consisting of angiopoietin 1 (Ang-1), extract of | 04-21-2011 |
Masataka Ota, Kanagawa JP
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20100282871 | FUEL INJECTION VALVE DEVICE - A fuel injection valve can be provided, with which temperature at needle valve seating position can be decreased and carburization of fuel and deposition of the carbide near the needle valve seating position can be prevented resulting in stable normal fuel injection control, and which is applicable to small and middle and also to large engines, particularly gas engines. The fuel injection valve is composed such that distance (A) from a seating face of the nozzle in the nozzle supporting body to a seating position of the needle valve in the nozzle is determined to be smaller than distance (B) from the nozzle seating face in the nozzle supporting body to the lower end of clearance between a nozzle insertion hole of the nozzle supporting body and a fitting part of the nozzle inserted into the nozzle insertion hole, thereby suppressing heat flow to the needle valve seating position. | 11-11-2010 |
Masaya Ota, Kanagawa JP
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20080213683 | Toners For Electrostatic-Image Development - To provide an emulsion polymerized agglomerated toner for electrostatic charge image which is excellent in the fixing property even at a high temperature without deteriorating other properties and which does not emit an odor offensive to people, and a process for its production. | 09-04-2008 |
Masayasu Ota, Kanagawa JP
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20160104878 | ASSEMBLED BATTERY AND MANUFACTURING METHOD THEREOF - A combined battery ( | 04-14-2016 |
Minoru Ota, Kanagawa JP
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20100150482 | LOW-FRICTION SLIDE MEMBER, PRODUCTION APPARATUS THEREFOR AND PROCESS FOR PRODUCING THE SAME - According to one aspect of the present invention, there is provided a low-friction sliding member having a sliding surface slidable relative to an opposing member via an oil, wherein the sliding surface has a plurality of texture groups, each of the texture groups consists of at least two adjacent fine recesses having portions aligned to each other in either a sliding direction or oil flow direction; a distance between the texture groups is larger than a distance between the adjacent recesses; and the texture groups is distributed uniformly over the sliding surface. | 06-17-2010 |
Mitsuhiko Ota, Kanagawa JP
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20150371126 | IMAGE FORMING APPARATUS AND METHOD - An image forming apparatus includes an image forming unit, a detector, an avoidance process memory, a print data memory, and an acceptor. The image forming unit receives a print instruction including print data and a print setting and forms an image on a sheet. The detector analyzes the print data and/or the print setting in the print instruction, and detects an error that is an unprocessable or invalid instruction. The avoidance process memory stores an error avoidance process of avoiding the error and enabling execution of image formation, in association with the print instruction including the error. The print data memory stores the print data in the print instruction including the error. The acceptor accepts an instruction to avoid the error and to execute image formation, in accordance with the stored error avoidance process and the stored print data. | 12-24-2015 |
Moriyoshi Ota, Kanagawa JP
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20110109355 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - To generate a highly accurate SSC while reducing the circuit area of a clock generation circuit that generates a normal clock and an SSC. A clock signal output from a voltage controlled oscillator is frequency-divided by a frequency divider, and is output as a first frequency-divided clock to a selector. The frequency divider outputs a plurality of second frequency-divided clocks each shifted in phase by 1/m of a period based on a control signal of a control circuit. The selector selects two frequency-divided clocks having the closest phase shift from among the first and second frequency-divided clocks. Based on a weighting data signal output from the control circuit, a phase interpolation circuit phase-shifts the frequency-divided clock by a phase shift obtained by dividing the phase difference between the two frequency-divided clocks, and outputs the resultant clock as an output clock. | 05-12-2011 |
Naoki Ota, Kanagawa JP
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20140105649 | DEVELOPING DEVICE AND IMAGE FORMING APPARATUS - A developing device includes: a transport/supply member disposed in a transport/supply path, formed along a developing roller, to supply a developer to the developing roller while transporting the developer from one end side toward the other end side; a transport/agitation member disposed in a transport/agitation path, inclined with respect to the transport/supply path, to agitate the developer while transporting the developer from the other end side toward the one end side; a first transport member disposed in a first transport path, connecting between the transport/supply path and the transport/agitation path on the other end side, to transport the developer from the transport/supply path to the transport/agitation path; and a second transport member disposed in a second transport path, connecting between the transport/agitation path and the transport/supply path on the one end side, to transport the developer from the transport/agitation path to the transport/supply path. | 04-17-2014 |
20150139682 | IMAGE FORMING APPARATUS - An image forming apparatus includes an image holding member, a charging unit, an electrostatic charge image forming unit, a developing unit that accommodates an electrostatic charge image developer containing flake shape toner particles, a transfer unit, an arranging unit that causes transfer residual toner to rise from the surface of the image holding member, a cleaning unit, and a fixing unit. | 05-21-2015 |
Naoya Ota, Kanagawa JP
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20110035092 | ANALOG/DIGITAL CONVERSION CIRCUIT, SEMICONDUCTOR DEVICE, AND ELECTRIC POWER STEERING CONTROLLING UNIT - The present invention provides a method in which a counting source is provided in data after analog/digital conversion to lessen a load placed when new and old data after the conversion are compared to each other. A log function is prepared in an A/D conversion controlling circuit. The log function latches the output of a counter in a 12-bit digital/analog converter at the timing of outputting a pulse from a comparator to determine data written into a data register group. In the case where a setting item related to log output in an ADCR is set at 1, not only the output of the 12-bit digital/analog converter, but also the output of a timer counter of an MTU is latched as a log. | 02-10-2011 |
20120259514 | ANALOG/DIGITAL CONVERSION CIRCUIT, SEMICONDUCTOR DEVICE, AND ELECTRIC POWER STEERING CONTROLLING UNIT - The present invention provides a method in which a counting source is provided in data after analog/digital conversion to lessen a load placed when new and old data after the conversion are compared to each other. A log function is prepared in an A/D conversion controlling circuit. The log function latches the output of a counter in a 12-bit digital/analog converter at the timing of outputting a pulse from a comparator to determine data written into a data register group. In the case where a setting item related to log output in an ADCR is set at 1, not only the output of the 12-bit digital/analog converter, but also the output of a timer counter of an MTU is latched as a log. | 10-11-2012 |
20130013153 | ANALOG/DIGITAL CONVERSION CIRCUIT, SEMICONDUCTOR DEVICE, AND ELECTRIC POWER STEERING CONTROLLING UNIT - The present invention provides a method in which a counting source is provided in data after analog/digital conversion to lessen a load placed when new and old data after the conversion are compared to each other. A log function is prepared in an A/D conversion controlling circuit. The log function latches the output of a counter in a 12-bit digital/analog converter at the timing of outputting a pulse from a comparator to determine data written into a data register group. In the case where a setting item related to log output in an ADCR is set at 1, not only the output of the 12-bit digital/analog converter, but also the output of a timer counter of an MTU is latched as a log. | 01-10-2013 |
Shinji Ota, Kanagawa JP
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20100253672 | LIQUID CRYSTAL DISPLAY DEVICE, AND TIMING CONTROLLER AND SIGNAL PROCESSING METHOD USED IN SAME - A liquid crystal display device is provided which is capable of reducing EMI (ElectraMagnetic Interference) noises while simultaneously responding to requirements for the high-speed transmission of image data, miniaturization and thinning of a signal processing board. A timing controller outputs, in accordance with an input data signal and input clock signal, a data line driving circuit controlling signal, internal data signal, internal clock signal to a data line driving circuit and outputs a scanning line driving circuit controlling signal to a scanning line driving circuit. The timing controller has a clock signal frequency setting mode in which a frequency of each of clock signals is set to a different value and the clock signals are supplied to the data line driving circuits and other data line driving circuits in one region and another region. | 10-07-2010 |
20140125243 | LIGHT-EMITTING ELEMENT DRIVING CIRCUIT AND DISPLAY DEVICE - Provided are a light-emitting element driving circuit for controlling luminance of light-emitting elements by using a PWM signal, and a display device including the light-emitting element driving circuit and plural light-emitting elements. The light-emitting element driving circuit includes: a control circuit configured to generate a control signal based on an input PWM signal in which ON-periods alternate with OFF-periods to form pulses; and a light-emitting element driving unit configured to drive the plurality of light-emitting elements by using the control signal. The control signal includes alternating first periods and second periods, where the first periods and the second periods correspond to the ON-periods and the OFF-periods of the input PWM signal, respectively. Each of the first periods includes an ON-period, and each of the second period includes an ON-period. The control signal includes a larger number of frequency components in comparison with frequency components of the input PWM signal. | 05-08-2014 |
Takeshi Ota, Kanagawa JP
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20160072252 | Semiconductor Lasers - A semiconductor laser comprises a semiconductor laser chip, a conductive mount, an insulation block, and an electrode. The semiconductor laser chip and the insulation block are bonded to a surface of the conductive mount, and an upper surface of the electrode and the semiconductor laser chip are electrically connected. The thickness of the electrode is no less than 0.3 mm. | 03-10-2016 |
Takumi Ota, Kanagawa JP
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20100019147 | METHOD AND APPARATUS FOR CHARGED PARTICLE BEAM INSPECTION - A charged particle beam inspection apparatus comprises: an electron gun for irradiating an electron beam onto a sample; a detector for detecting a signal obtained from the sample; an image processor for forming an image from the signal obtained from the detector, and an energy controller for controlling the beam energy of the electron beam to be irradiated onto the sample. An identical charged particle beam inspection apparatus carries out a plurality of types of inspections. An inspection apparatus of a projection type may be applied thereto. A pattern defect inspection, a foreign material inspection, and an inspection for a defect in a multilayer are carried out. Beam energies E | 01-28-2010 |
20100072647 | PATTERNING METHOD - A patterning method according to an embodiment of the present invention comprises: acquiring information about a surface state of an underlying film formed on a substrate; determining, based on the surface state, whether irregularity/foreign matter is present in each shot region in which a pattern is to be formed; and solidifying a resist agent while a first template, when it is determined that no irregularity/foreign matter is present in the shot region, or a second template that is different from the first template, when it is determined that irregularity/foreign matter is present in the shot region, is brought close to the underlying film on the shot region at a certain distance with the resist agent therebetween. | 03-25-2010 |
20110143271 | PATTERN GENERATING METHOD AND PROCESS DETERMINING METHOD - A pattern generating method includes obtaining an on-substrate pattern by performing a process for forming the on-substrate pattern by simulation or experiment based on a design pattern of the on-substrate pattern formed by an imprint process using a template, employing the design pattern when a comparison result of the design pattern and obtained on-substrate pattern satisfies a predetermined condition, and correcting the design pattern to satisfy the predetermined condition when the comparison result does not satisfy the predetermined condition. | 06-16-2011 |
20120129279 | IMPRINTING METHOD, IMPRINTING APPARATUS AND MEDIUM - According to one embodiment, there is provided an imprinting method for applying a first hardening resin material on a substrate to be processed and transferring a pattern of a semiconductor integrated circuit formed on a template onto the substrate to be processed on which the first hardening resin material is applied, wherein a second hardening resin material with higher separability than the first hardening resin material is applied on at least part of the outer periphery of an area in which the pattern is formed by one transferring. | 05-24-2012 |
20120131056 | DROP RECIPE CREATING METHOD, DATABASE CREATING METHOD AND MEDIUM - According to one embodiment, a plurality of test drop recipes are first created based on design data on a semiconductor integrated circuit. Based on a defect inspection result of a pattern of a hardening resin material, which is formed by pressing a template on which patterns of the semiconductor integrated circuit are formed onto the hardening resin material applied to a substrate to be processed by use of the test drop recipes, a drop recipe with least defects is selected per press position on the substrate to be processed from the test drop recipes. The selected drop recipes for respective press positions are collected per functional circuit block configuring the semiconductor integrated circuit, thereby to generate a drop recipe creation assistant database. | 05-24-2012 |
20120207931 | IMPRINTING APPARATUS, IMPRINTING METHOD, AND MANUFACTURING METHOD OF UNEVEN PLATE - According to one embodiment, an imprinting apparatus includes an ejecting unit, a stage, a moving unit, and an observation unit. The ejecting unit ejects and drips a hardening resin material onto a substrate to be processed. The substrate to be processed is placed onto the stage. The moving unit relatively moves the ejecting unit and the stage. The observation unit observes the dripped hardening resin material and the pattern with the state in which the dripped hardening resin material and the pattern are overlaid on a plane, before the template is brought into contact with the hardening resin material. | 08-16-2012 |
20120244719 | IMPRINT METHOD, IMPRINTING EQUIPMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In an imprint method according to one embodiment, a template on which a template pattern is formed is pushed against resist on a substrate to be transferred while the resist is cured in this state. The template is subsequently separated from the cured resist. The template is then degassed from the template pattern surface side between after the template is separated from the cured resist and till the template is pushed against resist at the next shot. | 09-27-2012 |
20130119251 | METHOD AND APPARATUS FOR CHARGED PARTICLE BEAM INSPECTION - A charged particle beam inspection apparatus comprises: an electron gun for irradiating an electron beam onto a sample; a detector for detecting a signal obtained from the sample; an image processor for forming an image from the signal obtained from the detector, and an energy controller for controlling the beam energy of the electron beam to be irradiated onto the sample. An identical charged particle beam inspection apparatus carries out a plurality of types of inspections. An inspection apparatus of a projection type may be applied thereto. A pattern defect inspection, a foreign material inspection, and an inspection for a defect in a multilayer are carried out. Beam energies E | 05-16-2013 |
20140353863 | IMPRINTING APPARATUS, IMPRINTING METHOD, AND MANUFACTURING METHOD OF UNEVEN PLATE - According to one embodiment, an imprinting apparatus includes an ejecting unit, a stage, a moving unit, and an observation unit. The ejecting unit ejects and drips a hardening resin material onto a substrate to be processed. The substrate to be processed is placed onto the stage. The moving unit relatively moves the ejecting unit and the stage. The observation unit observes the dripped hardening resin material and the pattern with the state in which the dripped hardening resin material and the pattern are overlaid on a plane, before the template is brought into contact with the hardening resin material. | 12-04-2014 |
Takuya Ota, Kanagawa JP
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20150294199 | PRINT CONTROL APPARATUS, PRINT CONTROL METHOD, AND NON-TRANSITORY COMPUTER READABLE MEDIUM - A print control apparatus includes a reconfigurable circuit that generates print data by reconfiguring a circuit configuration thereof respectively in response to a multiple image processes and performing the image processes on image data successively, and a reduction image generator that performs control to reconfigure the circuit configuration of the reconfigurable circuit in response to the image process, and generates a reduction image from the image data by performing part of the image processes on the image data using software, in response to command information including a generation method of the reduction image, in parallel with the image process performed by the reconfigurable circuit. | 10-15-2015 |
Toshihiko Ota, Kanagawa JP
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20090232669 | Refrigerant Compressor - A refrigerant compressor including a discharge valve system, which is configured in such a manner that the discharge valve system includes recess ( | 09-17-2009 |
20090232672 | REFRIGERATING COMPRESSOR AND REFRIGERATING DEVICE USING THE SAME - A refrigerating compressor includes a hermetic container accommodating oil, a motor accommodated in the container, a compressing unit provided under the motor and driven by the motor, and a vibration insulating wall. The compressing unit has a crankshaft, a cylinder block, a piston, a connecting rod and a feed oil pipe. The vibration insulating wall is placed inside the container at the bottom and surrounds the feed oil pipe with a given distance in between. | 09-17-2009 |
20100031696 | REFRIGERATING COMPRESSOR AND REFRIGERATING DEVICE USING THE SAME - A refrigerating compressor includes a hermetic container accommodating oil, a motor accommodated in the container, a compressor unit provided under the motor and driven by the motor, and a vibration-proof cover. The compressor unit has a crankshaft including a main shaft and an eccentric section, a cylinder block, a piston, a connecting rod and a feed oil pipe. The cylinder block has a bearing to support the main shaft rotatably and a cylinder. The piston reciprocates in the cylinder. The connecting rod connects the piston to the eccentric section. The feed oil-pipe is fixed to eccentric section and an end thereof is dipped in oil. The vibration-proof cover is fixed to the cylinder block and surrounds the feed oil pipe with a given distance in between. | 02-11-2010 |
Tsuyoshi Ota, Kanagawa JP
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20140070319 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first MOSFET is formed in a first region of a chip, and a second MOSFET is formed in a second region thereof. A first source terminal and a first gate terminal are formed in the first region. In the second region, a second source terminal and a second gate terminal are arranged so as to be aligned substantially parallel to a direction in which the first source terminal and the first gate terminal are aligned. A temperature detection diode is arranged between the first source terminal and the second source terminal. A first terminal and a second terminal of the temperature detection diode are aligned in a first direction substantially parallel to a direction in which the first source terminal and the first gate terminal are aligned or in a second direction substantially perpendicular thereto. | 03-13-2014 |
20140125289 | CELL PROTECTION SYSTEM - A cell protection system includes a charge control MOSFET | 05-08-2014 |
20150214213 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first MOSFET is formed in a first region of a chip, and a second MOSFET is formed in a second region thereof. A first source terminal and a first gate terminal are formed in the first region. In the second region, a second source terminal and a second gate terminal are arranged so as to be aligned substantially parallel to a direction in which the first source terminal and the first gate terminal are aligned. A temperature detection diode is arranged between the first source terminal and the second source terminal. A first terminal and a second terminal of the temperature detection diode are aligned in a first direction substantially parallel to a direction in which the first source terminal and the first gate terminal are aligned or in a second direction substantially perpendicular thereto. | 07-30-2015 |
Yo Ota, Kanagawa JP
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20110262678 | OPTICAL INFORMATION RECORDING MEDIUM - An optical information recording medium includes a recording layer, wherein the recording layer includes a thermoplastic resin and inorganic oxide particles dispersed in the thermoplastic resin. | 10-27-2011 |
Yoshihide Ota, Kanagawa JP
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20120162728 | IMAGE FORMING DEVICE - An image forming device includes an image forming unit, an image reading unit arranged above an upper part of the image forming unit, a sheet ejection space between the image forming unit and the image reading unit, and a supporting unit arranged on the upper part of the image forming unit to surround at least two sides of the sheet ejection space in different directions. The image reading unit is secured to the upper part of the image forming unit through the supporting unit. | 06-28-2012 |
20120230005 | HOLDER FOR HOLDING CABLE NOISE SUPPRESSOR AND IMAGE FORMING SYSTEM INCORPORATING THE SAME - A holder for holding a cable noise suppressor for a cable to interconnect a first printed circuit board in a first housing to a second printed circuit board in a second housing includes a first guide to determine a position and a direction of the cable noise suppressor held at a first position in the holder, a second guide to determine a position and a direction of the cable noise suppressor held at a second position different from the first position in the holder, and a cable guide to guide the cable projecting from the cable noise suppressor. The cable noise suppressor is held at either the first position or the second position in accordance with the relative positions of the first housing and the second housing. | 09-13-2012 |
Yoshinori Ota, Kanagawa JP
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20100097530 | DISPLAY DEVICE AND RADIO TRANSMISSION CONTROL METHOD - A display device includes: a monitor and receiving set having a video signal receiving section, a display section, an image quality control section, a first control signal transceiver, and a first control section; and a control and transmission set having a television broadcast receiving section, a video signal input section, a video signal transmitting section, a second control signal transceiver, a key input section, and a second control section. The Power consumption of a first radio transmission path formed by the video signal transmitting section and the video signal receiving section is larger than that of a second radio transmission path formed by the first and second control signal transceivers. A control signal for a user interface is communicated by the first and second control signal transceivers. Only the second radio transmission path of the first and second radio transmission paths is communicable in a standby state. | 04-22-2010 |
20110285621 | INFORMATION PROCESSING SYSTEM AND INFORMATION PROCESSING APPARATUS - An information processing system including an information processing apparatus and a remote controller. The remote controller includes a cursor key operation unit capable of performing a focus shift operation to cause a user to shift a focus and an enter input operation to cause the user to select an object as an selection candidate on which the focus is disposed and a mouse operation unit capable of performing a cursor pointer movement operation to move a cursor pointer and an enter input operation to cause the user to select the object indicated by the cursor pointer. The information processing apparatus includes a judgment unit to judge the object selected and a first enter input restriction unit to invalidate the enter input operation of the mouse operation unit performed within a preset time period from when a latest focus shift operation of the cursor key operation unit is performed. | 11-24-2011 |
20110289453 | INFORMATION PROCESSING SYSTEM AND INFORMATION PROCESSING APPARATUS - A controller may include first and second input operating sections to input an instruction, and a control unit to control selection of an object on a screen display based on an instruction input at the first and second input operating sections. When an enter instruction is input at one of the first and second input operating sections following input of a movement instruction at the other of the first and second input operating sections, the control unit may control start of a function of an object at a position indicated based on the input of the movement instruction at the other of the input operating sections. | 11-24-2011 |
Yoshio Ota, Kanagawa JP
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20120136090 | FIBER WADDING FOR FILLING BONE DEFECTS - A fiber wadding for filling bone defects having a flocculent three-dimensional structure is disclosed. The fiber wadding includes a plurality of fibers that contain a biodegradable resin as a principal component and a siloxane. Outside diameter of the plurality of fibers of the wadding is from about 0.05 μm to about 30 μm. Bulk density of the fiber wadding is about 0.005-0.3 g/cm | 05-31-2012 |
20120219595 | BIODEGRADABLE FIBER AND FIBER WADDING FOR FILLING BONE DEFECTS AND METHOD FOR PRODUCING THE SAME - A fiber wadding formed from a biodegradable polymer fiber containing calcium carbonate fine particles including silicon that is characterized in that hydroxyapatite is precipitated and scattered nearly uniformly on the surface of the biodegradable polymer fiber is disclosed. Further, a method for production of fiber wadding that includes the steps of heating and kneading silicon-containing calcium carbonate fine particles and a biodegradable polymer to produce a composite, dissolving the composite by mixing the composite with a solvent to obtain a spinning solution, processing the spinning solution into fiber wadding by using electrospinning method, and alternatingly immersing the fiber wadding in a calcium aqueous solution and a phosphate aqueous solution to cause precipitation of hydroxyapatite in an approximately uniformly scattered manner on the surface of the fibers is disclosed. | 08-30-2012 |
20150079147 | FIBER WADDING FOR FILLING BONE DEFECTS - A fiber wadding for filling bone defects having a flocculent three-dimensional structure is disclosed. The fiber wadding includes a plurality of fibers that contain a biodegradable resin as a principal component and a siloxane. Outside diameter of the plurality of fibers of the wadding is from about 0.05 μm to about 30 μm. Bulk density of the fiber wadding is about 0.005-0.3 g/cm | 03-19-2015 |
Yuji Ota, Kanagawa JP
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20140193134 | CONTENT DATA TRANSMISSION SYSTEM AND CONTENT DATA TRANSMISSION METHOD - [Problem] In a system that transmits content data from a content replay device to a content output device, to prevent a deterioration in audio quality or video data picture quality while being able to increase the simplicity of a setting-altering operation without requiring complicated signal processing. [Solution] The present invention is provided with: the content replay device, which receives an operation clock signal transmitted from the content output device via an operation clock transmission cable, operates on the basis of the operation clock signal, and transmits content data replayed by a replay unit to the content output device via a multimedia transmission cable; and the content output device, which generates the operation clock signal transmitted to the content replay device on the basis of an output device operation clock signal, transmits the operation clock signal to the content replay device via the operation clock transmission cable, and receives, performs signal processing on, and outputs to an external device the content data transmitted from the content replay device via the multimedia transmission cable. | 07-10-2014 |
Yuki Ota, Kanagawa JP
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20150255287 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To improve characteristics of a semiconductor device. | 09-10-2015 |
Yusuke Ota, Kanagawa JP
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20100084215 | TORQUE DETECTOR, METHOD OF PRODUCING SAME AND ELECTRIC POWER STEERING DEVICE - A torque detector capable of achieving reduced size, a method of producing the same and an electric power steering device are provided. The torque detector has: a first shaft body and a second shaft body; a connecting shaft for connecting them; a permanent magnet fixed to the first shaft body; a plurality of magnetic bodies and auxiliary magnetic bodies, fixed to the second shaft body and arranged within the magnetic field of the permanent magnet, for forming the magnetic circuit of the permanent magnet; and a magnetic flux detector for detecting magnetic flux by induction of the magnetic bodies and the auxiliary magnetic bodies, and detects torque based on a detection output of the magnetic flux detector when the torque has acted on the first shaft body or the second shaft body, wherein the permanent magnet is formed into the shape of a flat annular body surrounding the connecting shaft or the first shaft body, and has different magnetic poles alternately magnetized in the axial direction, and opposes the magnetic bodies and the auxiliary magnetic bodies in the axial direction of the first shaft body. | 04-08-2010 |
20110300672 | SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR - To provide a semiconductor device with improved reliability. The semiconductor device includes a wiring board, a microcomputer chip flip-chip bonded over the wiring board via gold bumps, a first memory chip laminated over the microcomputer chip, wires for coupling the first memory chip to the wiring board, an underfill material with which a flip-chip coupling portion of the microcomputer chip is filled, and a sealing member for sealing the microcomputer chip and the first memory chip with resin. Further, the corner of a second opening portion of a solder resist film of the wiring board corresponding to the corner of the chip on the air vent side in charging the underfill material is made close to the microcomputer chip, which can improve the wettability and spread of the underfill material at the second opening portion, thus reducing the exposure of leads to the second opening portion, thereby improving the reliability of the semiconductor device. | 12-08-2011 |
20130316500 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The method includes the steps of: providing a lead frame, including providing a concaved part in an upper face of a joint part of a die-pad-support lead of a lead frame for setting down a die pad and a tie-bar; bonding a semiconductor chip to a first principal face of the die pad via an adhesive-member layer; then, setting the lead frame between first and second molding dies having first and second cavities respectively so that the first and second cavities are opposed to each other, and the second principal face of the die pad faces toward the second cavity; and forming first and second resin sealed bodies on the sides of the first and second principal faces of the die pad respectively by resin sealing with the first and second molding dies clamping the tie-bar and a part of the lead frame surrounding the tie-bar. | 11-28-2013 |
20140264797 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The method includes the steps of: providing a lead frame, including providing a concaved part in an upper face of a joint part of a die-pad-support lead of a lead frame for setting down a die pad and a tie-bar; bonding a semiconductor chip to a first principal face of the die pad via an adhesive-member layer; then, setting the lead frame between first and second molding dies having first and second cavities respectively so that the first and second cavities are opposed to each other, and the second principal face of the die pad faces toward the second cavity; and forming first and second resin sealed bodies on the sides of the first and second principal faces of the die pad respectively by resin sealing with the first and second molding dies clamping the tie-bar and a part of the lead frame surrounding the tie-bar. | 09-18-2014 |
20160005699 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The method includes the steps of: providing a lead frame, including providing a concaved part in an upper face of a joint part of a die-pad-support lead of a lead frame for setting down a die pad and a tie-bar; bonding a semiconductor chip to a first principal face of the die pad via an adhesive-member layer; then, setting the lead frame between first and second molding dies having first and second cavities respectively so that the first and second cavities are opposed to each other, and the second principal face of the die pad faces toward the second cavity; and forming first and second resin sealed bodies on the sides of the first and second principal faces of the die pad respectively by resin sealing with the first and second molding dies clamping the tie-bar and a part of the lead frame surrounding the tie-bar. | 01-07-2016 |
Yutaka Ota, Kanagawa JP
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20080285268 | Backlight Device - Disclosed is a backlight device for illuminating a transmissive color liquid crystal display panel from its backside with white light. The backlight device includes, as a light source, a plural number of principal light emitting diode units | 11-20-2008 |
20090138862 | PROGRAM PARALLELIZATION SUPPORTING APPARATUS AND PROGRAM PARALLELIZATION SUPPORTING METHOD - A program parallelization supporting apparatus determines a determinacy in at least one dependency relationship of a data dependency, a control dependency and a pointer dependency in a program, extracts a critical path in the program, and extracts a processing instruction which exists on the critical path and has a non-deterministic determinacy in the dependency relationship. Furthermore, if a process related to a path of the extracted non-deterministic processing instruction is parallelized and the path of the non-deterministic processing instruction is deleted, the program parallelization supporting apparatus outputs parallelization labor hour information depending on the number of dependency relationships disturbing the parallelization and parallelization effect information depending on the number of processing instructions which are shortened by the parallelization. | 05-28-2009 |
20110055818 | SOURCE CODE ANALYZING SYSTEM AND SOURCE CODE ANALYZING METHOD - Every time an assignment statement is executed during performing a simulation according to a second variable memory system, it is determined whether a value interpreted to have the same meaning is assigned to the assignment statement in the simulation according to a first variable memory system and in the simulation according to the second variable memory system. When the value interpreted to have the same meaning is not assigned, the value assigned according to the second variable memory system is overwritten by an expected value, and a report indicating that the assignment statement is a part dependent on a variable memory system is output. | 03-03-2011 |
20130069961 | PROJECTOR, IMAGE PROCESSING APPARATUS AND IMAGE PROCESSING METHOD - A projector of an embodiment is provided with: an input line memory which holds an input image signal corresponding to one line; an image processor which generates an intermediate image signal correction-processed according to distortion of a projection lens, using the input image signal transferred from the input line memory; an output line memory which holds the intermediate image signal corresponding to one line; and an LCOS which guides light radiated from a light source to the projection lens in accordance with the intermediate image signal. The image processor is provided with an input supplementation buffer which stores the input image signals of a plurality of lines, an input data buffer which stores input image signals required to generate the intermediate image signal corresponding to one line, and a number-of-supplementary-lines calculator which calculates the number of supplementary lines of the input image signals. | 03-21-2013 |