Patent application number | Description | Published |
20090109970 | Network system, network management server, and access filter reconfiguration method - Provided is a network system, comprising: a plurality of network devices; a network constructed from the plurality of network devices; and a management server managing the network. The plurality of network devices include a first network device in which a filter assigned as a target of reconfiguration is set and a second network device coupled at a lower level of the first network device. The management server obtains topology of the network from the plurality of network devices; reconfigures, by referring to the obtained network topology, the filters of the first and second network device such that a range in which a packet can be forwarded through a reconfiguring filter set in the first network device is made equal to a range in which a packet can be forwarded through the filter set in the second network device; and sets the reconfigured filters into the network devices. | 04-30-2009 |
20100046532 | ROUTING CONTROL SYSTEM FOR L3VPN SERVICE NETWORK - A routing control system comprising a system controller and master and slave routing servers, wherein the master routing server includes a plurality of logical controllers, each of which performs routing control for each of the user networks, the system controller monitors a load state of the master routing server and migrates at least one of the plurality of logical controllers from the master routing server to the slave routing server when the load state has satisfied a predetermined condition, so that the slave routing server inherits routing control for a particular user network associated with the migrated logical controller. | 02-25-2010 |
20100161805 | SURPLUS RESOURCE MANAGEMENT SYSTEM, METHOD AND SERVER - In a system having physical machine resources and network component resources, a resource management technique is provided that is effective for deploying virtual machines utilizing these resources. A surplus policy regarding surplus resources is prepared as a parameter adjustable by the system administrator. A placement plan generating program at a VM placement plan generating server generates placement plans for virtual machines in response to alteration of the surplus policy. Then, a placement plan verification program at the VM placement plan generating server validates whether each of the created placement plans complies with the altered surplus policy. This validation is performed by simulating the amounts of utilization of both physical machine resources and network component resources. The VM placement plan generating server presents the placement plans that passed this validation, as those causing no problem in performance, to the system administrator through the use of an administrator terminal. | 06-24-2010 |
20110058560 | VIRTUAL NETWORK MANAGEMENT SERVER AND NETWORK SYSTEM - A virtual network management server includes ring node information that manages configuration nodes for each of the rings, and ring connection I/F for each of the ring configuration nodes, generates the VLAN configuration information so as to transfer a frame that is transmitted or received by a designated gateway connection port and a designated base station connection port by the designated VLAN, and also so as to transmit or receive a tagged frame of the designated VLAN by the ring connection I/F of all of the ring to which the gateway connection switch belongs and the ring to which the base station connection switch belongs, and updates the VLAN configuration of the switch. | 03-10-2011 |
20140341226 | ROUTING CONTROL SYSTEM FOR L3VPN SERVICE NETWORK - A routing control system comprising a system controller and master and slave routing servers, wherein the master routing server includes a plurality of logical controllers, each of which performs routing control for each of the user networks, the system controller monitors a load state of the master routing server and migrates at least one of the plurality of logical controllers from the master routing server to the slave routing server when the load state has satisfied a predetermined condition, so that the slave routing server inherits routing control for a particular user network associated with the migrated logical controller. | 11-20-2014 |
Patent application number | Description | Published |
20100279404 | METHOD OF NUCLEAR REPROGRAMMING - This invention provides a method of producing an induced pluripotent stem cell comprising the step of introducing at least one kind of non-viral expression vector (more preferably a plasmid vector) incorporating at least one gene that encodes a reprogramming factor into a somatic cell. An induced pluripotent stem cell wherein no exogenous genes induced is integrated into the cellular genome is also provided. | 11-04-2010 |
20110003365 | METHOD OF PREPARING INDUCED PLURIPOTENT STEM CELLS DEPRIVED OF REPROGRAMMING GENE - Provided is a method of preparing an induced pluripotent stem cell (iPS cell) deprived of a reprogramming gene, including providing an iPS cell having an expression vector wherein a loxP sequence is placed on each of the 5′ and 3′ sides of the reprogramming gene or a vector component necessary for the replication of the reprogramming gene in the same orientation, and treating the IPS cell with Cre recombinase. Also provided are an iPS cell deprived of a reprogramming gene, as obtained by the method, and a use of the iPS cell as a cell source for producing somatic cells. | 01-06-2011 |
20110223669 | METHOD OF EFFICIENTLY ESTABLISHING INDUCED PLURIPOTENT STEM CELLS - The present invention provides a method of improving the efficiency of establishment of induced pluripotent stem (iPS) cells, comprising inhibiting the p53 function in the step of somatic cell nuclear reprogramming. The inhibition of p53 function is achieved by bringing a substance selected from the group consisting of (1) chemical inhibitors of p53, (2) dominant negative mutants of p53 and nucleic acids that encode the same, (3) siRNAs and shRNAs against p53 and DNAs that encode the same, and (4) p53 pathway inhibitors, into contact with a somatic cell, and the like. The present invention also provides an agent for improving the efficiency of establishment of iPS cells, the agent comprising an inhibitor of p53 function, particularly (1) chemical inhibitors of p53, (2) dominant negative mutants of p53 and nucleic acids that encode the same, (3) siRNAs and shRNAs against p53 and DNAs that encode the same, and (4) p53 pathway inhibitors. The present invention further provides a method of producing an iPS cell, comprising bringing a nuclear reprogramming substance and an inhibitor of p53 function into contact with a somatic cell. | 09-15-2011 |
20120142103 | METHOD FOR INDUCING DIFFERENTIATION INTO EPITHELIAL PROGENITOR CELL/STEM CELL POPULATION AND CORNEAL EPITHELIAL CELL POPULATION FROM INDUCED PLURIPOTENT STEM CELLS - The present invention relates to: a method for inducing differentiation into an epithelial progenitor cell/stem cell population or a corneal epithelial cell population by culturing, under particular conditions, induced pluripotent stem cells induced from mammalian somatic cells or undifferentiated stem cells; an epithelial progenitor cell/stem cell population or a corneal epithelial cell population obtained by the method; and a cell preparation for the treatment of epithelial disease and a cell sheet, which are prepared using these cell populations. | 06-07-2012 |
20120196360 | METHOD OF EFFICIENTLY ESTABLISHING INDUCED PLURIPOTENT STEM CELLS - Provided is a method of producing an iPS cell, comprising bringing (a) Oct3/4 or a nucleic acid that encodes the same, (b) Klf4 or a nucleic acid that encodes the same, and (c) Sox2 or a nucleic acid that encodes the same, as well as (d1) L-Myc or a nucleic acid that encodes the same and/or (d2) a functional inhibitor of p53, into contact with a somatic cell. It is preferable that (a) a nucleic acid that encodes Oct3/4, (b) a nucleic acid that encodes Klf4, (c) a nucleic acid that encodes Sox2, (d1) a nucleic acid that encodes L-Myc and (e) a nucleic acid that encodes Lin28 or Lin28 | 08-02-2012 |
20130059386 | INDUCED PLURIPOTENT STEM CELLS PRODUCED WITH OCT3/4, KLF AND SOX - The present invention relates to a nuclear reprogramming factor having an action of reprogramming a differentiated somatic cell to derive an induced pluripotent stem (iPS) cell. The present invention also relates to the aforementioned iPS cells, methods of generating and maintaining iPS cells, and methods of using iPS cells, including screening and testing methods as well as methods of stem cell therapy. The present invention also relates to somatic cells derived by inducing differentiation of the aforementioned iPS cells. | 03-07-2013 |
20130065311 | METHOD OF NUCLEAR REPROGRAMMING - A method of producing an induced pluripotent stem cell includes introducing into a somatic cell one or more non-viral expression vectors. The vectors include one or more of an Oct family gene, a Klf family gene, a Sox family gene, a Myc family gene, a Lin family gene, and Nanog gene. The somatic cell is then cultured in a medium that supports pluripotent stem cells. At least a portion of the one or more introduced non-viral expression vectors is not substantially integrated in the chromosome. | 03-14-2013 |
20130071919 | METHOD OF SELECTING INDUCED PLURIPOTENT STEM CELL - The present invention provides a method of selecting a highly safe induced pluripotent stem cell, which includes comprehensively detecting the sequence of an expression vector used for induction of the induced pluripotent stem cell, in the nucleic acid in the cell, and a kit used for the method. | 03-21-2013 |
20150072417 | METHOD OF NUCLEAR REPROGRAMMING - A method of producing an induced pluripotent stem cell includes introducing into a somatic cell one or more non-viral expression vectors. The vectors include one or more of an Oct family gene, a Klf family gene, a Sox family gene, a Myc family gene, a Lin family gene, and Nanog gene. The somatic cell is then cultured in a medium that supports pluripotent stem cells. At least a portion of the one or more introduced non-viral expression vectors is not substantially integrated in the chromosome. | 03-12-2015 |
Patent application number | Description | Published |
20080233943 | Network management apparatus and method of selecting base station for software update - A network management apparatus inputs a plurality of work dates and time periods to update software in a base station. The apparatus obtains an n-week average of the numbers of connection calls during each of the input time periods for each day of the week, based on statistical information about connection with a wireless terminal in each base station. The apparatus obtains an m-month average of the numbers of connection calls during each of the input time periods for each date, based on the statistical information. The apparatus calculates, for each of the time periods for a work date, an average or a weighted average of the n-week average and the m-month average to obtain a degree of impact upon a communication service. A processing section selects a work date and a time period having the minimum degree of impact and updates the software. | 09-25-2008 |
20090042554 | WIRELESS COMMUNICATION APPARATUS, WIRELESS COMMUNICATION NETWORK AND SOFTWARE UPGRADING METHOD - A base station control portion | 02-12-2009 |
20090111450 | WIRELESS COMMUNICATION APPARATUS, WIRELESS COMMUNICATION NETWORK AND SOFTWARE UPGRADING METHOD - A base station control portion | 04-30-2009 |
20090111451 | WIRELESS COMMUNICATION APPARATUS, WIRELESS COMMUNICATION NETWORK AND SOFTWARE UPGRADING METHOD - A base station control portion selects one or multiple signals in accordance with the state of radio waves from signals received through multiple communication paths. A wireless communication apparatus communicates with a wireless terminal and a wired communication network at multiple frequencies. In response to a request for software upgrading from a network management device, the wireless communication apparatus selects one frequency, controls the state of transmission waves of a wireless interface such that a communication path in which a communication service is being provided can be switched to another communication network without interruption, rewrites software for each wireless interface to software received through a wired interface in advance, and returns the state of transmission waves of the wireless interface. Thus, the software can be upgraded without blackouts of the communication service to the wireless terminal. | 04-30-2009 |
20100248705 | WIRELESS COMMUNICATION APPARATUS, WIRELESS COMMUNICATION NETWORK AND SOFTWARE UPGRADING METHOD - A base station control portion | 09-30-2010 |
20110070875 | WIRELESS COMMUNICATION APPARATUS, WIRELESS COMMUNICATION NETWORK AND SOFTWARE UPGRADING METHOD - A base station control portion selects one or multiple signals in accordance with the state of radio waves from signals received through multiple communication paths. A wireless communication apparatus communicates with a wireless terminal and a wired communication network at multiple frequencies. In response to a request for software upgrading from a network management device, the wireless communication apparatus selects one frequency, controls the state of transmission waves of a wireless interface such that a communication path in which a communication service is being provided can be switched to another communication network without interruption, rewrites software for each wireless interface to software received through a wired interface in advance, and returns the state of transmission waves of the wireless interface. Thus, the software can be upgraded without blackouts of the communication service to the wireless terminal. | 03-24-2011 |
20110171947 | WIRELESS COMMUNICATION APPARATUS, WIRELESS COMMUNICATION NETWORK AND SOFTWARE UPGRADING METHOD - A base station control portion | 07-14-2011 |
Patent application number | Description | Published |
20110175107 | SILICON CARBIDE SUBSTRATE - A base portion is made of silicon carbide and has a main surface. At least one silicon carbide layer is provided on the main surface of the base portion in a manner exposing a region of the main surface along an outer edge of the main surface. At least one protection layer is provided on this region of the main surface of the base portion along the outer edge of the main surface. Thus, a silicon carbide substrate can be polished with high in-plane uniformity. | 07-21-2011 |
20110175108 | LIGHT-EMITTING DEVICE - A silicon carbide substrate has a first layer facing a semiconductor layer and a second layer stacked on the first layer. Dislocation density of the second layer is higher than dislocation density of the first layer. Thus, quantum efficiency and power efficiency of a light-emitting device can both be high. | 07-21-2011 |
20110193196 | Indium Phosphide Substrate Manufacturing Method, Epitaxial Wafer Manufacturing Method, Indium Phosphide Substrate, and Epitaxial Wafer - Affords methods of manufacturing InP substrates, methods of manufacturing epitaxial wafers, InP substrates, and eptiaxial wafers whereby deterioration of the electrical characteristics can be kept under control, and at the same time, deterioration of the PL characteristics can be kept under control. An InP substrate manufacturing method of the present invention is provided with the following steps. An InP substrate is prepared (Steps S | 08-11-2011 |
20110198027 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A base portion and first and second silicon carbide substrates are disposed in a processing chamber such that a first side surface of a first silicon carbide substrate and a side surface of a second silicon carbide substrate face each other. The processing chamber has an inner surface at least a portion of which is covered with an absorbing portion including Ta atoms and C atoms. In order to connect the first and second side surfaces to each other, a temperature in the processing chamber is increased to reach or exceed a temperature at which silicon carbide can sublime. In the step of increasing the temperature, at least a portion of the absorbing portion is carbonized. | 08-18-2011 |
20110233561 | SEMICONDUCTOR SUBSTRATE - A supporting portion is made of silicon carbide. At least one layer has first and second surfaces. The first surface is supported by the supporting portion. The at least one layer has first and second regions. The first region is made of silicon carbide of a single-crystal structure. The second region is made of graphite. The second surface has a surface formed by the first region. The first surface has a surface formed by the first region, and a surface formed by the second region. In this way, a semiconductor substrate can be provided which has a region made of silicon carbide having a single-crystal structure and a supporting portion made of silicon carbide and allows for reduced electric resistance of an interface therebetween. | 09-29-2011 |
20110278593 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate, by heating the base substrate in the crucible to fall within a range of temperature higher than a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming the base layer, a gas containing silicon is introduced into the crucible. | 11-17-2011 |
20110278594 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate by heating the base substrate in the crucible to fall within a range of temperature equal to or higher than a sublimation temperature of silicon carbide constituting the base substrate. The crucible has an inner wall at least a portion of which is provided with a coating layer made of silicon carbide. | 11-17-2011 |
20110278595 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; fabricating a stacked substrate by placing said SiC substrate on and in contact with a main surface of said base substrate; and connecting said base substrate and said SiC substrate to each other by heating said stacked substrate in a container to fall within a range of temperature equal to or greater than a sublimation temperature of silicon carbide constituting said base substrate. In the step of connecting said base substrate and said SiC substrate, a silicon carbide body made of silicon carbide and different from said base substrate and said SiC substrate is disposed in said container. | 11-17-2011 |
20120126251 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate achieves reduced manufacturing cost. The method includes the steps of: preparing a base substrate and a SiC substrate; fabricating a stacked substrate by stacking the base substrate and the SiC substrate; fabricating a connected substrate by heating the stacked substrate; transferring a void, formed at a connection interface, in a thickness direction of the connected substrate by heating the connected substrate to cause the base substrate to have a temperature higher than that of the SiC substrate; and removing the void by removing a region including a main surface of the base substrate opposite to the SiC substrate. | 05-24-2012 |
20120161157 | SILICON CARBIDE SUBSTRATE - A silicon carbide substrate, which achieves restrained warpage even when a different-type material layer made of a material other than silicon carbide, includes: a base layer made of silicon carbide; and a plurality of SiC layers arranged side by side on the base layer when viewed in a planar view and each made of single-crystal silicon carbide. A gap is formed between end surfaces of adjacent SiC layers. | 06-28-2012 |
20120161158 | COMBINED SUBSTRATE HAVING SILICON CARBIDE SUBSTRATE - A first silicon carbide substrate has a first backside surface connected to a supporting portion, a first front-side surface opposite to the first backside surface, and a first side surface connecting the first backside surface and the first front-side surface to each other. A second silicon carbide substrate has a second backside surface connected to the supporting portion, a second front-side surface opposite to the second backside surface, and a second side surface connecting the second backside surface and the second front-side surface to each other and forming a gap between the first side surface and the second side surface. A closing portion closes the gap. Thereby, foreign matters can be prevented from remaining in a gap between a plurality of silicon carbide substrates provided in a combined substrate. | 06-28-2012 |
20120184113 | METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A step of preparing a stack is performed to position each single-crystal substrate in a first single-crystal substrate group and a first base substrate face to face with each other, position each single-crystal substrate in a second single-crystal substrate group and a second base substrate face to face with each other, and stack the first single-crystal substrate group, the first base substrate, an insertion portion, the second single-crystal substrate group, and the second base substrate in one direction in this order. Next, the stack is heated so as to allow a temperature of the stack to reach a temperature at which silicon carbide can sublime and so as to form a temperature gradient in the stack with the temperature thereof getting increased in the above-described direction. In this way, silicon carbide substrates can be manufactured efficiently. | 07-19-2012 |
20120276715 | METHOD FOR MANUFACTURING COMBINED SUBSTRATE HAVING SILICON CARBIDE SUBSTRATE - A connected substrate having a supporting portion and first and second silicon carbide substrates is prepared. The first silicon carbide substrate has a first backside surface connected to the supporting portion, a first front-side surface, and a first side surface connecting the first backside surface and the first front-side surface to each other. The second silicon carbide substrate has a second backside surface connected to the supporting portion, a second front-side surface, and a second side surface connecting the second backside surface and the second front-side surface to each other and forming a gap between the first side surface and the second side surface. A filling portion for filling the gap is formed. Then, the first and second front-side surfaces are polished. Then, the filling portion is removed. Then, a closing portion for closing the gap is formed. | 11-01-2012 |
20120304839 | METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE - A method of manufacturing a silicon carbide substrate includes the steps of preparing an ingot of single crystal silicon carbide and obtaining a substrate by cutting the ingot. Then, in the step of obtaining a substrate, cutting proceeds in a direction α in which an angle β formed with respect to a <11-20> direction or a <1-100> direction of the ingot is 15°±5° in an orthogonal projection on a {0001} plane. | 12-06-2012 |
20120325196 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate includes the steps of preparing an ingot of single crystal silicon carbide, obtaining a silicon carbide substrate by cutting the ingot, and forming a chamfer portion in a region including an outer peripheral surface of the silicon carbide substrate. In the step of obtaining the silicon carbide substrate, the ingot is cut such that a main surface of the silicon carbide substrate forms an angle of not less than 10° with respect to a {0001} plane. | 12-27-2012 |
20130009171 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate is made of silicon carbide having a 4H type single-crystal structure. Further, the substrate has a physical property in which a ratio of a peak strength in a wavelength of around 500 nm to a peak strength in a wavelength of around 390 nm is 0.1 or smaller in photoluminescence measurement. In this way, the semiconductor device is obtained to have a low on-resistance. | 01-10-2013 |
20130017683 | METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide substrate is prepared. By exposing the silicon carbide substrate to an atmosphere having a nitrogen dioxide concentration greater than or equal to 2 μg/m | 01-17-2013 |
20130109110 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | 05-02-2013 |
20130109156 | Indium Phosphide Substrate Manufacturing Method and Epitaxial Wafer Manufacturing Method | 05-02-2013 |
20130264584 | SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING SAME - A silicon carbide single-crystal substrate includes a first surface, a second surface opposite to the first surface, and a peripheral edge portion sandwiched between the first surface and the second surface. A plurality of grinding traces are formed in a surface of the peripheral edge portion. A chamfer width as a distance from an outermost peripheral end portion of the peripheral edge portion to one of the plurality of grinding traces which is located on an innermost peripheral side of the peripheral edge portion in a direction parallel to the first surface is not less than 50 μm and not more than 400 μm. Thereby, a silicon carbide single-crystal substrate capable of suppressing occurrence of a crack, and a method for manufacturing the same can be provided. | 10-10-2013 |
20140030892 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing an ingot made of silicon carbide; obtaining a silicon carbide substrate by cutting the ingot prepared; etching a silicon surface of the silicon carbide substrate; and polishing the etching surface of the silicon carbide substrate after etching the silicon carbide substrate. The step of etching a silicon surface of the silicon carbide substrate includes the step of removing silicon atoms, which form the silicon carbide, from an etching region using chlorine gas, the etching region including the etching main surface of the silicon carbide substrate. | 01-30-2014 |
20140073228 | SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING SAME - A silicon carbide single-crystal substrate includes a first surface, a second surface opposite to the first surface, and a peripheral edge portion sandwiched between the first surface and the second surface, A plurality of grinding traces are formed in a surface of the peripheral edge portion. A chamfer width as a distance from an outermost peripheral end portion of the peripheral edge portion to one of the plurality of grinding traces which is located on an innermost peripheral side of the peripheral edge portion in a direction parallel to the first surface is not less than 50 μm and not more than 400 μm. Thereby, a silicon carbide single-crystal substrate capable of suppressing occurrence of a crack, and a method for manufacturing the same can be provided. | 03-13-2014 |
20140138709 | SILICON CARBIDE SUBSTRATE - A first circular surface ( | 05-22-2014 |
20140315373 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate 10 has the following steps. A silicon carbide single crystal substrate | 10-23-2014 |
Patent application number | Description | Published |
20110284873 | SILICON CARBIDE SUBSTRATE - A silicon carbide substrate has a substrate region and a support portion. The substrate region has a first single crystal substrate. The support portion is joined to a first backside surface of the first single crystal. The dislocation density of the first single crystal substrate is lower than the dislocation density of the support portion. At least one of the substrate region and the support portion has voids. | 11-24-2011 |
20110306181 | METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE - A method of manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate formed of silicon carbide and a SiC substrate formed of single crystal silicon carbide; fabricating a stacked substrate by stacking the base substrate and the SiC substrate to have their main surfaces in contact with each other; heating the stacked substrate to join the base substrate and the SiC substrate and thereby fabricating a joined substrate; and heating the joined substrate such that a temperature difference is formed between the base substrate and the SiC substrate, and thereby discharging voids formed at the step of fabricating the joined substrate at an interface between the base substrate and the SiC substrate to the outside. | 12-15-2011 |
20120003812 | METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE - A plurality of silicon carbide substrates and a support portion are heated. A temperature of a first radiation plane facing the plurality of silicon carbide substrates in a first space extending from the plurality of silicon carbide substrates in a direction perpendicular to one plane and away from the support portion is set to a first temperature. A temperature of a second radiation plane facing the support portion in a second space extending from the support portion in a direction perpendicular to one plane and away from the plurality of silicon carbide substrates is set to a second temperature higher than the first temperature. A temperature of a third radiation plane facing the plurality of silicon carbide substrates in a third space extending from a gap among the plurality of silicon carbide substrates along one plane is set to a third temperature lower than the second temperature. | 01-05-2012 |
20120009761 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other. | 01-12-2012 |
20120017826 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A supporting portion ( | 01-26-2012 |
20120070605 | SILICON CARBIDE INGOT, SILICON CARBIDE SUBSTRATE, MANUFACTURING METHOD THEREOF, CRUCIBLE, AND SEMICONDUCTOR SUBSTRATE - An SiC ingot includes a bottom face having 4 sides; four side faces extending from the bottom face in a direction intersecting the direction of the bottom face; and a growth face connected with the side faces located at a side opposite to the bottom face. At least one of the bottom face, the side faces, and the growth face is the {0001} plane, {1-100} plane, {11-20} plane, or a plane having an inclination within 10° relative to these planes. | 03-22-2012 |
20120091472 | SILICON CARBIDE SUBSTRATE - A first circular surface is provided with a first notch portion having a first shape. A second circular surface is opposite to the first circular surface and is provided with a second notch portion having a second shape. A side surface connects the first circular surface and the second circular surface to each other. The first notch portion and the second notch portion are opposite to each other. The side surface has a first depression connecting the first notch portion and the second notch portion to each other. | 04-19-2012 |
Patent application number | Description | Published |
20080211787 | LIQUID CRYSTAL DISPLAY APPARATUS - A liquid crystal display apparatus includes a display panel configured to have a plurality of scanning lines for which liquid crystal display elements each containing an optical input device and a display pixel are arranged, respectively, a backlight configured to be arranged facing the display panel to illuminate the display panel, and a control part configured to control writing into the display pixel and reading of a detection signal of the optical input device, wherein the control part displays an external light detection image substantially shielding light from the backlight on the display pixels throughout a first period of a frame period, and displays a display image on the display pixels throughout a second period of the frame period. | 09-04-2008 |
20080291372 | LIQUID CRYSTAL DISPLAY DEVICE - A transflective liquid crystal display device includes a liquid crystal display panel which is configured such that a liquid crystal layer is held between a pair of substrates, and to which an OCB mode is applied, and a pair of optical elements which are disposed on outsides of the liquid crystal layer, and optically compensate a retardation of the liquid crystal layer in a predetermined display state in which a voltage is applied to the liquid crystal layer, wherein the optical element is configured to include a circular polarization element including a polarizer and a first retardation plate which imparts a retardation of ¼ wavelength, and the first retardation plate has such wavelength dispersion characteristics as to establish a relationship, α1<1, where α1 is a ratio of an in-plane retardation Re430 at a wavelength of 430 nm to an in-plane retardation Re550 at a wavelength of 550 nm. | 11-27-2008 |
20090002609 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device having a reflective part and a transmissive part in each of a plurality of pixels which are arrayed in a matrix, includes a liquid crystal display panel which is configured such that a liquid crystal layer is held between a pair of substrates, and to which an OCB mode is applied, and a pair of optical elements which are disposed on outer surfaces of the liquid crystal display panel, respectively, and optically compensate a retardation of the liquid crystal layer in a predetermined display state in which a voltage is applied to the liquid crystal layer, wherein the optical element is configured to include a circular polarization element including a polarizer and a first retardation plate which is disposed between the polarizer and the liquid crystal display panel and imparts a retardation of 1/4 wavelength, and a second retardation plate which is disposed between the circular polarization element and the liquid crystal layer, and has refractive index anisotropy with a major axis being inclined to a normal line, and the optical element has a retardation in a thickness direction thereof. | 01-01-2009 |
20090027576 | LIQUID CRYSTAL DISPLAY DEVICE - A device includes a first substrate including a pixel electrode and an underlayer electrode a part of which is opposed to the pixel electrode, a second substrate including a counter-electrode which is opposed to the pixel electrode, and a layer which is held between the first and the second substrate, and which is in a first state prior to power-on and transitions to a second state, at a time of a display operation, wherein the pixel electrode includes a first part that passes light and a second part that reflects light, the second part includes a projection which is opposed to the counter-electrode, and a transverse electric field generating section, which is provided near the projection so as to generate a transverse electric field between the underlayer electrode and the second part, is disposed at an end portion of the second part, which is opposed to the underlying electrode. | 01-29-2009 |
20090066899 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device includes a liquid crystal display panel to which an OCB mode is applied, and an optical compensation element which optically compensates a retardation of the liquid crystal layer in a predetermined display state in which a voltage is applied to the liquid crystal layer. The optical compensation element includes a polarizer, a first retardation plate which is disposed between the polarizer and the liquid crystal display panel and in which discotic liquid crystal molecules are fixed in a state in which the discotic liquid crystal molecules are hybrid-aligned along a normal direction, and a second retardation plate which is disposed between the polarizer and the first retardation plate and has wavelength dispersion characteristics which are opposite to wavelength dispersion characteristics of an in-plane retardation in the liquid crystal layer. | 03-12-2009 |
20120038870 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device includes an OCB mode liquid crystal display panel, and an optical compensation element which is disposed outside of the liquid crystal display layer. The optical compensation element includes a polarizer plate, a first retardation plate which is disposed between the polarizer plate and the liquid crystal layer, and a second retardation plate which is disposed between the polarizer plate and the first retardation plate and has a biaxial refractive index anisotropy. The optical compensation element compensates a difference of a polarization state that differs between azimuth directions of light passing through the liquid crystal layer and compensates a shift of the polarization state of light, which passes through the retardation plate, from an azimuth direction of an absorption axis of the polarizer plate. | 02-16-2012 |
20120257125 | LIQUID CRYSTAL SHUTTER COMPONENT AND LIQUID CRYSTAL SHUTTER - According to one embodiment, a liquid crystal shutter component includes a first polarizer, a second polarizer, a liquid crystal layer, a first retardation layer, a second retardation layer, a third retardation layer and a fourth retardation layer. A liquid crystal orientation of the liquid crystal layer transitions between a plurality of bend orientation states. The retardation in the direction along the plane of the second retardation layer and the fourth retardation layer is 20 nm or more and 120 nm or less. The retardation along the first direction of the second retardation layer and the fourth retardation layer is 40 nm or more and 140 nm or less. | 10-11-2012 |
Patent application number | Description | Published |
20100326074 | STEAM TURBINE POWER PLANT AND OPERATION METHOD THEREOF - According to one aspect of the embodiment, a steam turbine power plant | 12-30-2010 |
20110048011 | STEAM TURBINE POWER PLANT AND OPERATING METHOD THEREOF - A steam turbine power plant | 03-03-2011 |
20130306058 | STEAM GENERATION SYSTEM - A steam generation system of an embodiment has a first to fourth heating units. The first heating unit heats a first heat medium by collected solar heat. The second heating unit heats a second heat medium different from the first heat medium by the collected solar heat. The third heating unit heats water or steam by heat of the heated second heat medium. The fourth heating unit further heats the heated water or steam by heat of the heated first heat medium so as to generate steam which is further increased in temperature. | 11-21-2013 |
20140020387 | POWER GENERATING SYSTEM - In one embodiment, a power generating system includes; a flow dividing unit configured to divide a first heat medium supplied thereto to a first flow path and a second flow path; and a heat accumulating unit configured to accumulate the first heat medium sent thereto via the second flow path and deliver the first heat medium at a temporally leveled flow rate. The system further includes: a heat exchanging unit configured to transfer heat from the first heat medium sent thereto via the first flow path and the first heat medium delivered thereto from the heat accumulating unit, to a second heat medium that is lower in boiling point than the first heat medium; and a turbine configured to rotationally move with the second heat medium to which heat has been transferred by the heat exchanging unit. | 01-23-2014 |
20140033707 | POWER PLANT AND HEAT SUPPLY METHOD - According to one embodiment, a power plant includes a solar heat collector which collects solar heat and then supplies the solar heat to a heat medium. The power plant includes a heat exchanger which changes a secondary medium into steam by heat exchange with the heat medium. The power plant includes a turbine. The power plant includes a temperature sensor which detects the temperature of the heat medium. The power plant includes and a controller which supplies the heat medium with heat obtained by the conversion of an output variation component having a period shorter than a predetermined value in electricity generated by a wind power generator when the temperature does not satisfy a predetermined condition associated with the driving of the turbine. | 02-06-2014 |
20140116046 | POWER GENERATING SYSTEM - A flasher separates a geothermal fluid into steam and hot water. A steam turbine is driven by being supplied with the separated steam as a working medium. An evaporator is supplied with the steam from the steam turbine as a first heating medium, which is thereafter supplied to a first preheater via the evaporator. A superheater is supplied with the hot water separated by the flasher as a second heating medium, which is thereafter supplied to a second preheater via the superheater. A medium turbine is driven by being supplied, as a working medium, with a low-boiling-point medium having been heat-exchanged sequentially in the first preheater, the second preheater, the evaporator, and the superheater. In the evaporator and the first preheater, the low-boiling-point medium and the first heating medium are heat-exchanged. In the superheater and the second preheater, the low-boiling-point medium and the second heating medium are heat-exchanged. | 05-01-2014 |
Patent application number | Description | Published |
20100251713 | Steam turbine power plant - An intermediate-pressure turbine is divided into a high-temperature, high-pressure side high-temperature, intermediate-pressure turbine section | 10-07-2010 |
20110247329 | STEAM TURBINE PLANT - A steam turbine plant of one embodiment includes a solar energy collector configured to collect solar heat, a boiler configured to change water into steam by the solar heat, a high pressure turbine including a turbine or turbines connected to each other in series, and configured to be driven by the steam from the boiler, first to N-th reheaters, where N is an integer of two or more, and first to N-th reheat turbines, wherein the first reheater is configured to heat the steam exhausted from the high pressure turbine by the solar heat, and the first reheat turbine is configured to be driven by the steam from the first reheater, and the second to N-th reheaters are configured to heat the steam exhausted from the first to (N−1)-th reheat turbines by the solar heat, respectively, and the second to N-th reheat turbines are configured to be driven by the steam from the second to the N-th reheaters, respectively. | 10-13-2011 |
20110247330 | STEAM TURBINE PLANT - A steam turbine plant of one embodiment includes at least one heater configured to change water into steam to produce high pressure steam and low pressure steam having a lower pressure than the high pressure steam, a high pressure turbine including a turbine or turbines connected to each other in series, and having a first inlet to supply the high pressure steam, a second inlet to supply the low pressure steam and located at a downstream of the first inlet, and an exhaust port located at a downstream of the second inlet, the high pressure turbine being configured to be driven by the steam supplied from the first and second inlets, a reheater configured to heat the steam exhausted from the exhaust port, and a reheat turbine configured to be driven by the steam from the reheater. | 10-13-2011 |
20110247331 | STEAM TURBINE PLANT - A steam turbine plant of one embodiment includes a boiler configured to change water into steam, a high pressure turbine including a turbine or turbines connected to each other in series, and having a first inlet to supply the steam from the boiler, an extraction port located at a downstream of the first inlet, a second inlet to supply the steam extracted from the extraction port and located at a downstream of the extraction port, and an exhaust port located at a downstream of the second inlet, the high pressure turbine being configured to be driven by the steam supplied from the first and second inlets, an extraction steam heater configured to heat the steam extracted from the extraction port and to supply the heated steam to the second inlet, a reheater configured to heat the steam exhausted from the exhaust port, and a reheat turbine configured to be driven by the steam from the reheater. | 10-13-2011 |
20120096861 | CARBON DIOXIDE RECOVERY METHOD AND CARBON-DIOXIDE-RECOVERY-TYPE STEAM POWER GENERATION SYSTEM - According to one embodiment, a carbon-dioxide-recovery-type steam power generation system comprises a boiler that generates steam and an exhaust gas, an absorption tower that allows carbon dioxide contained in the exhaust gas to be absorbed in an absorption liquid, a regeneration tower that regenerates discharges a carbon dioxide gas from the absorption liquid, a reboiler that heats the absorption liquid of the regeneration tower, a turbine that is rotationally driven by the steam, a condenser that generates condensate by cooling steam exhausted from the turbine, a compressor that compresses the carbon dioxide gas, and a cooler that cools the carbon dioxide gas, which has been compressed by the compressor, while using a part of the condensate as cooling water. The reboiler is supplied with steam from the turbine and steam generated by the cooling of the carbon dioxide gas at the cooler. | 04-26-2012 |
20120096863 | CARBON DIOXIDE RECOVERY METHOD AND CARBON-DIOXIDE-RECOVERY-TYPE STEAM POWER GENERATION SYSTEM - According to one embodiment, a carbon-dioxide-recovery-type steam power generation system comprises a boiler that generates steam and an exhaust gas, an absorption tower that allows carbon dioxide contained in the exhaust gas to be absorbed in an absorption liquid, a regeneration tower that discharges a carbon dioxide gas from the absorption liquid supplied from the absorption tower, a reboiler that heats the absorption liquid of the regeneration tower, a turbine that is rotationally driven by the steam, a first condenser, a second condenser, and a desuperheater. The first condenser generates condensate by cooling steam exhausted from the turbine. The second condenser condenses the carbon dioxide gas while using a part of the condensate as cooling water, and generates hot water. | 04-26-2012 |
20120096865 | CARBON DIOXIDE RECOVERY METHOD AND CARBON-DIOXIDE-RECOVERY-TYPE STEAM POWER GENERATION SYSTEM - According to one embodiment, a carbon-dioxide-recovery-type steam power generation system comprises a boiler that produces steam and generates an exhaust gas, a first turbine that is rotationally driven by the steam, an absorption tower allows carbon dioxide contained in the exhaust gas to be absorbed into an absorption liquid, a regeneration tower that discharges the carbon dioxide gas from the absorption liquid supplied from the absorption tower, a condenser that removes moisture from the carbon dioxide gas, discharged from the regeneration tower, by condensing the carbon dioxide gas using cooling water, a compressor that compresses the carbon dioxide gas from which the moisture is removed by the condenser, and a second turbine that drives the compressor. The steam produced by the cooling water recovering the heat from the carbon dioxide gas in the condenser is supplied to the first turbine or the second turbine. | 04-26-2012 |
20120266596 | STEAM TURBINE PLANT - A steam turbine plant of one embodiment includes a boiler to change water into steam, an upstream turbine including plural stages of rotor vanes and plural stages of stator vanes and to be driven by the steam from the boiler, a downstream turbine including plural stages of rotor vanes and plural stages of stator vanes and to be driven by the steam from the upstream turbine, a condenser to change the steam exhausted from the downstream turbine into water, a collector to collect water from, for example, the steam which exists upstream of an inlet of the final-stage rotor vane in the upstream turbine, and a collected matter path to cause collected matter in the collector to flow into, for example, the steam between an outlet of the final-stage rotor vane of the upstream turbine and an inlet of the final-stage rotor vane of the downstream turbine. | 10-25-2012 |
20120266598 | STEAM TURBINE PLANT - A steam turbine plant of one embodiment includes a boiler to change water into steam, a high pressure turbine including plural stages of rotor and stator vanes and to be driven by the steam from the boiler, a reheater to heat the steam from the high pressure turbine, a reheat turbine including plural stages of rotor and stator vanes and to be driven by the steam from the reheater, a condenser to change the steam from the reheat turbine into water, a collector to collect water from, for example, the steam existing upstream of an inlet of the final-stage rotor vane in the high pressure turbine, and a path to cause collected matter in the collector to flow into, for example, the steam between an outlet of the final-stage rotor vane of the high pressure turbine and an inlet of the final-stage rotor vane of the reheat turbine. | 10-25-2012 |
Patent application number | Description | Published |
20090130335 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, DIELECTRIC WINDOW USED THEREIN, AND MANUFACTURING METHOD OF SUCH A DIELECTRIC WINDOW - A method for performing plasma doping which is high in uniformity. A prescribed gas is introduced into a vacuum container from gas supply apparatus while being exhausted through an exhaust hole by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency power of 13.56 MHz is supplied from a high-frequency power source to a coil which is disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. The dielectric window is composed of plural dielectric plates, and grooves are formed in at least one surface of at least two dielectric plates opposed to each other. Gas passages are formed by the grooves and a flat surface(s) opposed to the grooves, and gas flow-out holes which are formed in the dielectric plate that is closest to the sample electrode communicate with the grooves inside the dielectric window. The flow rates of gases that are introduced through the gas flow-out holes and the gas flow-out holes, respectively, can be controlled independently of each other, whereby the uniformity of processing can be increased. | 05-21-2009 |
20090255901 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND TRAY | 10-15-2009 |
20100051584 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD | 03-04-2010 |
20100096088 | PLASMA ETCHING APPARATUS - A plasma etching apparatus includes a pressure-reducible chamber | 04-22-2010 |
20100173431 | WAFER RECLAMATION METHOD AND WAFER RECLAMATION APPARATUS - Provided is a wafer reclamation method for reclaiming a semiconductor wafer, on which a different material layer is formed, by removing the different material layer. The wafer reclamation method includes a physically removing step of physically removing the different material layer, a film forming step of forming a film on a surface of the semiconductor wafer from which the different material layer has been removed in the physically removing step, and a dry etching step of etching the semiconductor wafer by plasma together with the film formed in the film forming step. | 07-08-2010 |
20110111601 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - In a plasma processing apparatus, thrust-up pins are elevated and a thrust-up force is detected when electrostatic attraction for a substrate by a substrate holding device is ceased after completion of plasma processing, the elevation of the thrust-up pins is ceased upon detection of a detection threshold, and a stepped elevating operation in which the elevation and stoppage of the thrust-up pins are repeated a plurality of times are thereafter commenced on condition that the detected thrust-up force falls to or below the detection threshold and that release of the substrate from a placement surface has not been completed. In the stepped elevating operation, operation timing of the thrust-up device is controlled so that the completion of the release of the substrate from the placement surface is detected when the thrust-up pins are stopped after being elevated and so that the stepped elevating operation is continued on condition that the release has not been completed. | 05-12-2011 |
20120006489 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Substrates are contained in substrate containing holes which penetrate a tray in the thickness direction. A dielectric plate in a chamber is provided with a tray supporting surface which supports the lower surface of the tray and substrate placing sections which protrude upward, and has an electrostatic chuck electrode therein. The substrate supporting section which supports the substrate contained in the substrate containing holes is provided with a plurality of protruding sections formed at intervals in the circumferential direction of the substrate containing holes. The substrates are supported in point-contact mode by means of the protruding sections. | 01-12-2012 |
20120256363 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion. | 10-11-2012 |
20130068726 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus | 03-21-2013 |
20130068727 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a stock unit, a processing unit, and an alignment chamber. The stock unit supplies and collects a conveyable tray formed with a plurality of housing holes in each of which a wafer is housed. In the processing chamber, plasma processing is executed on the wafers housed in the tray supplied from the stock unit. The alignment chamber is provided with a rotating table on which the tray before being subjected to the plasma processing is set to perform positioning of the wafers on the rotating table. A housing state determination unit of a control device determines whether or not the wafer is misaligned with respect the housing hole of the tray based on a height detected by height detecting sensors. | 03-21-2013 |
20130168353 | PLASMA PROCESSING METHOD FOR SUBSTRATES - A process for, with use of a tray in which substrate receiving holes are provided and which has substrate support portions protruding from inner walls of the substrate receiving holes, placing the tray onto a tray support portion of a substrate stage and placing substrates onto the substrate holding portions, so that edge portions of the substrates projected out of end edges of the substrate holding portions and the substrate support portions are separated; a process for reducing pressure in a chamber and supplying a process gas thereto to fulfill plasma processing for the substrates; and a process for, with the tray and the substrates placed on the substrate stage, reducing the pressure in the chamber and supplying a process gas to fulfill plasma processing so that by-products stuck to edge portions of the substrates and the substrate support portions are removed. | 07-04-2013 |
20140048527 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion. | 02-20-2014 |
20140154832 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A dry etching apparatus includes a tray for conveying substrates. The tray has substrate housing holes as through holes each capable of housing the three substrates. The substrates are supported by a substrate support section protruding from a hole wall of each of the substrate housing holes. A stage is provided in a chamber in which plasma is generated. The stage includes substrate installation sections to be inserted from a lower surface side of the tray to the substrate housing holes so that lower surfaces of the plurality of the substrates transferred from the substrate support section are installed on substrate installation surfaces that are their upper end surfaces. High shape controllability and favorable productivity for the angular substrate can be implemented while preventing increased in size of the apparatus. | 06-05-2014 |
20150059980 | PLASMA PROCESSING APPARATUS - In plasma processing, damage on a cover is prevented while thermal effect on an annular frame is suppressed. Plasma processing is applied to a substrate held by a carrier including an annular frame and a holding sheet. There are provided a chamber having a decompressible internal space, a plasma source for generating plasma in the chamber, a stage that is provided in the chamber and places the carrier thereon, and a cover that is placed above the stage to cover the holding sheet and the frame, and has a window penetrating through the thickness of the cover. The cover is made of a material having a high thermal conductivity, and a front face exposed to plasma, at least on the side of the window of the cover, is covered with a protect part made of a material having a low reactivity with plasma. | 03-05-2015 |
Patent application number | Description | Published |
20090102409 | CONTROL DEVICE WITH LEARNING FUNCTION FOR ELECTRIC MOTORS - A control device for electric motors, capable of precisely moving one object by using two electric motors based on periodically repeated commands. The control device includes a first learning controller for calculating an amount of correction so that a positional deviation of a first electric motor is minimized, and a second learning controller for calculating an amount of correction so that a positional deviation of a second electric motor is minimized. The first and second learning controllers are independent from each other, and configured to minimize the positional deviation of the corresponding electric motor. The parameters set in the learning controllers, each defining the response of learning control of each electric motor, are equal to each other. | 04-23-2009 |
20100264867 | CONTROL DEVICE FOR MACHINE TOOL - A control device for a machine tool including a feed axis driving motor; a first power consumption calculating portion calculating power consumption of the feed axis driving motor; a second power consumption calculating portion calculating power consumption of equipment adapted to be operated by constant power; and a motor control portion determining a target time constant correlated with at least one of acceleration time and deceleration time of the feed axis driving motor, based on a summation of the power consumption calculated by the first power consumption calculating portion and the power consumption calculated by the second power consumption calculating portion, and controlling the feed axis driving motor based on the target time constant. | 10-21-2010 |
20100295496 | SERVOMOTOR CONTROLLER FOR CONTROLLING PERIODIC RECIPROCATION - A servomotor controller capable of properly generating reference positions, by which learning control of angle based method may be applied to the periodically reciprocating motion of an object. The learning controller obtains a first positional deviation of a driven object at every predetermined sampling period of time, and the first positional deviation is converted, by a first converting part, to a second positional deviation associated with each reference position in one periodic reciprocating motion of the driven object. After a first correction amount of an immediately previous reciprocating motion of the driven object, stored in a memory, is added to the second positional deviation, the second positional deviation is stored in the memory as a renewed first correction amount. The first correction amount is converted to a second correction amount associated with the sampling period, by a second converting part. | 11-25-2010 |
20110006719 | PRESS MACHINE CONTROLLER - A press machine controller ( | 01-13-2011 |
20110046773 | TOOL VECTOR DISPLAY APPARATUS FOR A MACHINE TOOL WITH ROTATIONAL AXES - Time information t and positional information about each axis are obtained, and the three-dimensional coordinates of tool center point Pe at time t are calculated to display the path of the tool center point Pe at time t. Then, whether a fixed time has elapsed or not is decided. If the fixed time has elapsed, the coordinates of the tool vector start point Ps at time t are calculated to display a line segment connecting between tool vector start point Ps and tool center point Pe, which is the end point of the tool vector. This display enables the orientation of the tool at each tool center point to be grasped at a glance. | 02-24-2011 |
20120007536 | TOOL PATH DISPLAY APPARATUS WITH DECELERATION FACTOR IDENTIFICATION MEANS FOR MACHINE TOOL - A numerical controller calculates a first position command from a machining program, converts the first position command into a second position command for restricting a tangential speed of a tool, and delivers the second position command and a status signal indicative of the achievement of the conversion of the first position command into the second position command to a tool path display apparatus. The tool path display apparatus displays the path of the tool in a color corresponding to the status signal and can thereby determine the point on the tool path at which the speed restriction is performed. | 01-12-2012 |
20130110278 | CONTROL DEVICE OF GEAR PROCESSING MACHINE | 05-02-2013 |
Patent application number | Description | Published |
20120323403 | VEHICLE CONTROL DEVICE AND VEHICLE CONTROL METHOD - A vehicle control device for starting a drive assist in accordance with relative positional relationship between a self vehicle and an object around the self vehicle, comprises a control value calculating part which calculates a control value based on an inter-vehicular distance between the self vehicle and the object, a velocity of the self vehicle, a relative velocity of the object to the self vehicle, and an acceleration-related value obtained based on at least one of an acceleration of the self vehicle and an acceleration of the object; an acceleration-related value adjusting part which adjusts the acceleration-related value by changing a degree of contribution of at least one of the acceleration of the self vehicle and the acceleration of the object in the acceleration-related value in accordance with the acceleration of the self vehicle; and a drive assist start judging part which starts the drive assist if the control value is greater than a threshold value. | 12-20-2012 |
20130173132 | BRAKING FORCE CONTROL APPARATUS FOR A VEHICLE - In a braking force control apparatus which controls a braking force applied to a vehicle based on a relation thereof with an obstacle ahead of the vehicle, irrespective of a braking operation of a driver, a lateral force is predicted which can be generated in cases where avoidance steering is carried out by the driver, in order to avoid an obstacle which has been detected, and an actual braking force actually applied to a longitudinal direction of the vehicle is limited in accordance with a braking force which can be applied in the longitudinal direction of the vehicle and which is calculated based on the lateral force thus predicted. According to this, in the braking force control apparatus which controls the braking force of the vehicle, the lateral force for avoiding a collision with the obstacle by means of steering is obtained. | 07-04-2013 |
20130332005 | VEHICLE CONTROL DEVICE AND VEHICLE CONTROL METHOD - A vehicle control device for starting a drive assist in accordance with relative positional relationship between a self vehicle and an object around the self vehicle, comprises a control value calculating part which calculates a control value based on an inter-vehicular distance between the self vehicle and the object, a velocity of the self vehicle, a relative velocity of the object to the self vehicle, and an acceleration-related value obtained based on at least one of an acceleration of the self vehicle and an acceleration of the object; an acceleration-related value adjusting part which adjusts the acceleration-related value by changing a degree of contribution of at least one of the acceleration of the self vehicle and the acceleration of the object in the acceleration-related value in accordance with the acceleration of the self vehicle; and a drive assist start judging part which starts the drive assist if the control value is greater than a threshold value. | 12-12-2013 |
20150015434 | PERIPHERAL OBJECT DETECTION APPARATUS AND PERIPHERAL OBJECT DETECTION METHOD - A peripheral object detection apparatus that is installed in a vehicle to detect a peripheral object obstructing travel by a vehicle includes: a radar that obtains a reflection intensity by transmitting an electromagnetic wave and receiving an electromagnetic wave reflected by an object; and a determination unit that calculates an integrated value of an amount of variation in the reflection intensity within a predetermined section, obtained by the radar, and determines on the basis of the integrated value whether or not the object is a low object not obstructing travel by the vehicle. | 01-15-2015 |