Ohiwa
Kenji Ohiwa, Hirakata-Shi JP
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20150090517 | WORK VEHICLE - A work vehicle includes a reducing agent tank, a battery, a reducing agent tank mounting member, a battery cover and a first guide member. The battery and the tank are positioned in a row. The mounting member has a bottom plate, and a partition plate extending upward from the bottom plate between the tank and the battery. The tank is mounted on the bottom plate. The battery cover has an upper plate above the battery, and a side plate extending downward from a side of the upper plate between the tank and the battery. The first guide member extends from the side plate toward the tank and slopes downward. Preferably, a first end of a second guide member disposed below the first guide member is positioned closer to the battery than a distal end of the first guide member, with the second guide member sloping downward toward the tank. | 04-02-2015 |
Kohji Ohiwa, Osaka JP
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20120150461 | ELECTRIC POWER MEASURING DEVICE, METHOD FOR MEASURING ELECTRIC POWER, ELECTRIC POWER MEASURING SYSTEM, INFORMATION-PROCESSING DEVICE, CONTROL PROGRAM, AND STORAGE MEDIUM - The electric power measuring device includes (i) a plug which is to be connected to a power supply outlet, (ii) a socket to which a load is connected so that electric power is supplied from the plug to the load, (iii) an electric power measuring section for measuring the electric power consumed by the load, (iv) a memory section for storing measurement error information regarding the electric power measuring section, and (v) a correcting section for correcting, based on the measurement error information, a value of electric power measured by the electric power measuring section. | 06-14-2012 |
Shoji Ohiwa, Kiryu JP
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20090108713 | Outer Rotor Type Hybrid Stepping Motor - An outer rotor type hybrid stepping motor includes a stator, a rotor, a magnet disposed axially in the stator or the rotor, a stator core disposed inwardly from a gap between the stator and rotor, and a stator winding on the stator core. The rotor is disposed outside the gap. The magnet has an axial cross sectional area A. The residual magnetic flux density of the magnet is Br, and a total of magnetic fluxes exiting axially from the surface is A×Br. A gap average magnetic flux density, determined by dividing A×Br by the top cross sectional area small teeth poles on the rotor is Bg; pitch of the teeth is τ; and tooth width is Tw. Average magnetic flux density Bg, tooth pitch τ, and tooth width Tw are determined by the equation K=1/(π×Bg×Tw/τ), with the coefficient k in a range of 0.56-0.66 (1/T). | 04-30-2009 |
Tokuhisa Ohiwa, Tokyo JP
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20140083979 | DEPOSIT REMOVAL METHOD - A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber. | 03-27-2014 |
Tokuhisa Ohiwa, Kawasaki-Shi JP
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20140284308 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - There are provided a plasma etching method and a plasma etching apparatus, capable of suppressing occurrence of local bias in etching rate and suppressing occurrence of charge-up damage. The plasma etching method of etching a silicon layer of a substrate to be processed using the plasma etching apparatus sets the pressure in a processing chamber to 13.3 Pa or more and applies, to a lower electrode, a first high-frequency power with a first frequency and a second high-frequency power with a second frequency that is lower than the first frequency and is a frequency of 1 MHz or lower. | 09-25-2014 |
Tokuhisa Ohiwa, Seoul KR
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20150259788 | SPUTTERING APPARATUS AND MANUFACTURING METHOD OF MAGNETORESISTIVE ELEMENT - According to one embodiment, a sputtering apparatus includes a first chamber configured to form a magnetic film on a substrate and a second chamber configured to form a non-magnetic film on the substrate, which are disposed to be adjacent to each other so that the substrate is conveyable between the chambers. A magnetic target is provided in the first chamber, and a non-magnetic target and a low dielectric-constant target having a dielectric constant lower than that of the non-magnetic target are provided in the second chamber. Here, before the non-magnetic target is formed on the substrate by sputtering, the low dielectric-constant target is subjected to sputtering in the second chamber, thereby depositing a low dielectric-constant material on the inner surface of the second chamber. | 09-17-2015 |
Tokuhisa Ohiwa, Yokkaichi-Shi JP
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20110168205 | SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING APPARATUS - A substrate cleaning method performing cleaning of a surface of a substrate after a pattern on the substrate is formed by plasma etching, includes: a by-product removal process removing a by-product by exposing the substrate to an HF gas atmosphere; and a residual fluorine removal process removing fluorine remaining on the substrate by turning cleaning gas containing hydrogen gas and chemical compound gas containing carbon and hydrogen as constituent elements into plasma to act on the substrate. | 07-14-2011 |
20120009786 | PLASMA PROCESSING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit. | 01-12-2012 |
20120021605 | SEMICONDUCTOR DEVICE PRODUCING METHOD - In a semiconductor device producing method according to one embodiment, an insulating film containing silicon is formed on a semiconductor substrate, a resist is deposited on the insulating film, the resist is patterned into a predetermined pattern, and the insulating film is processed by a dry etching treatment in which gas containing C, F, Br, H, and O is used with the resist having the predetermined pattern as a mask. A deposited film in which C and Br are coupled is produced on the resist. | 01-26-2012 |
Tokuhisa Ohiwa, Mie-Ken JP
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20110183497 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include multiply stacking an insulating layer and a conductive layer alternately above a base member. The insulating layer includes silicon oxide. The conductive layer includes silicon. In addition, the method can form a SiOC film on a stacked body of the insulating layers and the conductive layers, pattern the SiOC film, and make a hole in the stacked body by etching the insulating layers and the conductive layers using the patterned SiOC film as a mask. | 07-28-2011 |
20110291178 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor device includes a substrate, a lower gate layer, a stacked body, a dummy electrode layer, an insulating film, and a channel body. The lower gate layer is provided above the substrate. The stacked body includes a plurality of insulating layers and a plurality of electrode layers alternately stacked above the lower gate layer. The dummy electrode layer is provided between the lower gate layer and the stacked body, made of the same material as the electrode layer, and thicker than each of the electrode layers. The insulating film includes a charge storage film provided on a side wall of a hole formed to penetrate through the stacked body and the dummy electrode layer. The channel body is provided on an inside of the insulating film in the hole. | 12-01-2011 |