Patent application number | Description | Published |
20090085071 | SENSOR DEVICE COMPRISING ELONGATED NANOSTRUCTURES - A sensor device is provided for determining the presence and/or amount of at least one component in a fluid. The sensor device comprises at least one sensor unit, the at least one sensor unit comprising at least one elongated nanostructure and a dielectric material surrounding the at least one elongated nanostructure. The dielectric material is such that it is selectively permeable for one of the at least one component and is capable of sensing the component permeated through the dielectric material. The sensor device according to preferred embodiments shows good sensitivity and good mechanical strength. The present invention furthermore provides a method for manufacturing such a sensor device and a method for determining the presence and/or amount of at least one component in a fluid using such a sensor device. | 04-02-2009 |
20100176822 | NANOWIRE SENSOR - An analyte sensing device is disclosed. In one aspect, the device includes at least one sensing module on a substrate. The sensing module has at least one nanowire including a bottom, an intermediate part and a top, the bottom being closer to the substrate than the top. The module has a surrounding electrode surrounding the bottom and at least part of the intermediate part of each nanowire in height direction and being electrically isolated from the nanowire. There is a gap between each nanowire and the corresponding surrounding electrode allowing penetration of an analyte to be detected between the nanowire and the surrounding electrode. A measurement circuitry is electrically connected to each nanowire and the surrounding electrode for detecting a change in an electrical property as a result of the penetration of the analyte into the gap. | 07-15-2010 |
20100264333 | Gas Sensing Device - The present invention relates to a gas sensing device comprising a nanoparticle layer ( | 10-21-2010 |
20110205543 | Gas Sensor, Method for Optically Measuring the Presence of a Gas Using the Gas Sensor, and Gas Sensing System - The present disclosure relates to a gas sensor including a first layer and a second layer superimposed on each other along an interface between the two layers. The first layer includes an array of nanoparticles along the interface, the nanoparticles provided so as to allow, upon illumination with electromagnetic radiation, long range diffractive coupling of surface plasmon resonances resulting in a surface lattice resonance condition. The second layer includes a material that, when exposed to at least one predetermined gas, detectably affects the surface lattice resonance condition. The material of the second layer preferably has a porosity of at least 10%. | 08-25-2011 |
20120075634 | Sensor, Method for Detecting The Presence and/or Concentration of an Analyte Using the Sensor, and Use of the Method - Methods and sensors for detecting the presence and/or concentration of an analyte are disclosed. In one aspect, a sensing element for use in a sensor is disclosed. The sensing element comprises a resonant cavity device configured to emit optical radiation at an initial power level, a sensing layer exhibiting an initial refractive index, and a detector. The sensing layer is configured to absorb or adsorb an analyte and, in response to absorbing or adsorbing the analyte, exhibit a modified refractive index that differs from the initial refractive index. The resonant cavity device is further configured to, in response to the sensing layer absorbing or adsorbing the analyte, emit optical radiation at a modified power level based on the modified refractive index. The detector is configured to detect the modified power level. | 03-29-2012 |
20120272721 | DEVICE COMPRISING A GAS SENSOR SENSITIVE TO THE PRESENCE OF A SPECIFIC GAS, METHOD OF MANUFACTURING A GAS SENSOR SENSITIVE TO THE PRESENCE OF A SPECIFIC GAS FOR USE IN THE DEVICE AND USE OF THE DEVICE - A device including a gas sensor sensitive to the presence of a specific gas is disclosed. In one aspect, the gas sensor includes a first segment made of a dielectric material and a second segment made of a semiconducting material. The first segment has a first surface exposed to an environment of the gas sensor and is located between the environment and the second segment. The first segment has a first thickness and the second segment has a second thickness. The first thickness is selected such that upon diffusion of a gas molecule of the specific gas into the first segment, a dipole of the molecule of the specific gas detectably influences a bending of an energy-band structure of the semiconducting material of the second segment. The second thickness is in the order of, or smaller than, the Debye length of the semiconducting material. | 11-01-2012 |
20130111977 | Chemical Sensor - The application describes methods and apparatus for chemical sensing, e.g. gas sensing, which have high sensitivity but low power operation. A sensor is described having a flexible membrane comprising a III/N heterojunction structure configured so as to form a two dimensional electron gas within said structure. A sensing material is disposed on at least part of the flexible membrane, the sensing material being sensitive to one or more target chemicals so as to undergo a change in physical properties in the presence of said one or more target chemicals. The sensing material is coupled to said heterojunction structure such that said change in physical properties of the sensing material imparts a change in stress within the heterojunction structure which modulates the resistivity of the two dimensional electron gas. | 05-09-2013 |
20130334061 | SENSOR FOR SENSING THE PRESENCE OF AT LEAST ONE FLUIDUM - A Sensor for sensing the presence of at least one fluidum in a space adjoining the sensor is disclosed. In one aspect, the sensor has a two-dimensional electron gas (2DEG) layer stack, a gate electrode overlaying at least part of the 2DEG layer stack for electrostatically controlling electron density of a 2DEG in the 2DEG layer stack and a source and a drain electrode contacting the 2DEG layer stack for electrically contacting the 2DEG, wherein a detection opening is provided in between the gate electrode and the 2DEG layer stack and wherein the detection opening communicates with the space through a detection opening inlet such that molecules of the fluidum can move from the adjoining space through the detection opening inlet into the detection opening where they can measurably alter a electric characteristic of the 2DEG. | 12-19-2013 |
20140175516 | TWO-DIMENSIONAL ELECTRON GAS SENSOR AND METHODS FOR MAKING AND USING THE SENSOR - The disclosed technology generally relates to a sensor and methods for making and using the same, and more particularly relates to a sensor configured to sense the presence of at least one fluidum. In one aspect, a sensor for sensing a fluidum in a space adjoining the sensor comprises a two-dimensional electron gas (2DEG) layer stack. The sensor additionally comprises a gate lying adjacent to at least part of the 2DEG layer stack and configured to electrostatically control the electron density of a two-dimensional electron gas (2DEG) in the 2DEG layer stack. The sensor further comprises a source electrode contacting the 2DEG layer stack for electrically contacting the 2DEG. The 2DEG layer stack of the sensor comprises a contact surface contacting the space and provided to contact molecules of the fluidum which is desired to be detected, and the gate of the sensor comprises a doped semiconductor bottom layer of the 2DEG layer stack in electrical contact with at least one gate electrode, where the doped semiconductor bottom layer being located at a side of the 2DEG layer stack opposing the contact surface. | 06-26-2014 |
20140323895 | 2DEG-BASED SENSOR AND DEVICE FOR ECG SENSING - The disclosed technology generally relates to sensors comprising a two-dimensional electron gas (2DEG), and more particularly to an AlGaN/GaN 2DEG-based sensor for sensing signals associated with electrocardiograms, and methods of using the same. In one aspect, a sensor comprises a substrate and a GaN/AlGaN hetero-junction structure formed on the substrate and configured to form a two-dimensional electron gas (2DEG) channel within the GaN/AlGaN hetero-junction structure. The sensor additionally comprises Ohmic contacts connected to electrical metallizations and to the 2DEG channel, wherein the GaN/AlGaN hetero-junction structure has a recess formed between the Ohmic contacts. The sensor further comprises a dielectric layer formed on a top surface of the sensor. | 10-30-2014 |