Patent application number | Description | Published |
20110136271 | Method of Producing Semiconductor Components - A method is provided for producing a semiconductor component ( | 06-09-2011 |
20110241031 | OPTOELECTRONIC PROJECTION DEVICE - An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer. | 10-06-2011 |
20110260205 | RADIATION-EMITTING SEMICONDUCTOR CHIP - A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer. | 10-27-2011 |
20120098016 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING AN INORGANIC OPTOELECTRONIC SEMICONDUCTOR COMPONENT - An optoelectronic semiconductor component includes a carrier and at least one semiconductor layer sequence. The semiconductor layer sequence includes at least one active layer. The semiconductor layer sequence is furthermore mounted on the carrier. The semiconductor component furthermore includes a metal mirror located between the carrier and the semiconductor layer sequence. The carrier and the semiconductor layer sequence project laterally beyond the metal mirror. The metal mirror is laterally surrounded by a radiation-transmissive encapsulation layer. | 04-26-2012 |
20120189291 | ILLUMINATION DEVICE FOR A CAMERA, AND METHOD FOR OPERATING THE SAME - An illumination device contains a light-emitting semiconductor chip containing a plurality of individually drivable emission regions. The illumination device furthermore contains an optical element designed to shape light emitted by the emission regions to form a beam of rays. The illumination device is designed such that different beam profiles of the beam of rays can be set by the individually drivable emission regions. | 07-26-2012 |
20120193657 | Radiation-Emitting Semiconductor Component - A radiation-emitting semiconductor component includes a light-emitting diode chip with at least two emission regions that can be operated independently of each other and at least two differently designed conversion elements. During operation of the light-emitting diode chips each of the emission regions is provided for generating electromagnetic primary radiation. Each emission region has an emission surface by which at least part of the primary radiation is decoupled from the light-emitting diode chip. The conversion elements are provided for absorbing at least part of the primary radiation and for re-emitting secondary radiation. The differently designed conversion elements are disposed downstream of different emission surfaces. An electric resistance element is connected in series or parallel to at least one of the emission regions. | 08-02-2012 |
20120273807 | Method for the Producing of a Light-Emitting Semiconductor Chip, Method for the Production of a Conversion Die and Light-Emitting Semiconductor Chip - A light-emitting semiconductor chip is provided, the semiconductor chip comprising a semiconductor body having a pixel region with at least two electrically isolated sub-regions, each sub-region comprising an active layer, which generates electromagnetic radiation of a first wavelength range during operation, a separately manufactured ceramic conversion die over a radiation emission area of at least one sub-region, said conversion die being configured to convert radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, wherein a width of the conversion die does not exceed 100 μm. Further, a method for the production of a light-emitting semiconductor chip and method for the production of a conversion die are provided. | 11-01-2012 |
20120299049 | Optoelectronic Semiconductor Chip and Method for Adapting a Contact Structure for Electrically Contacting an Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip has a first semiconductor functional region with a first terminal and a second terminal. A contact structure electrically contacts the optoelectronic semiconductor chip. The contact structure is connected electrically conductively to the first semiconductor functional region. The contact structure has a disconnectable conductor structure. An operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is not disconnected. This path is interrupted if the conductor structure is disconnected. Alternatively, an operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is disconnected. The conductor structure connects the first terminal to the second terminal and short circuits the first semiconductor functional region if the conductor structure is not disconnected. | 11-29-2012 |
20130043496 | LIGHTING DEVICE - A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more. | 02-21-2013 |
20130099272 | OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip includes a semiconductor body, having an n-conducting region and a p-conducting region, and a single n-type contact element, via which the n-conducting region can be electrically contact-connected through the p-conducting region. | 04-25-2013 |
20130134881 | LIGHT-EMITTING DIODE ARRANGEMENT AND LIGHT-EMITTING MEANS, IN PARTICULAR WITH SUCH A LIGHT-EMITTING DIODE ARRANGEMENT - A light-emitting diode arrangement includes a piezoelectric transformer having at least one output connection position, and a high-voltage light-emitting diode including a high-voltage light-emitting diode chip including at least two active regions connected in series with one another, wherein the high-voltage light-emitting diode is electrically connected to the output connection position of the piezo transformer. | 05-30-2013 |
20130140598 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND OPTOELECTRONIC SEMICONDUCTOR CHIP - A method for producing an optoelectronic semiconductor chip is specified, comprising the following steps: providing an n-conducting layer ( | 06-06-2013 |
20130207156 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR CHIPS - An optoelectronic semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, the semiconductor body arranged on the carrier wherein an emission region and a detection region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region arranged between a first semiconductor layer and a second semiconductor layer and provided in the emission region to generate radiation; the first semiconductor layer is arranged on the side of the active region facing away from the carrier; and the emission region has a recess extending through the active region. | 08-15-2013 |
20150236070 | RADIATION-EMITTING SEMICONDUCTOR CHIP - A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation and is arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region facing away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer, in the emission region, electrically conductively connects to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; the second semiconductor layer, in the emission region, electrically conductively connects to a second connection layer. | 08-20-2015 |
Patent application number | Description | Published |
20080284313 | Structured Luminescence Conversion Layer - An apparatus device such as a light source is disclosed which has an OLED device and a structured luminescence conversion layer deposited on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The structured luminescence conversion layer contains regions such as color-changing and non-color-changing regions with particular shapes arranged in a particular pattern. | 11-20-2008 |
20090039272 | Optoelectronic component - An optoelectronic component comprises a first electrode ( | 02-12-2009 |
20090091258 | Optoelectronic Component and Method for Producing an Optoelectronic Component - An optoelectronic comprises a substrate ( | 04-09-2009 |
20110133628 | Opto-Electronic Component - An optoelectronic device comprises an organic layer sequence ( | 06-09-2011 |
20110284494 | Method for Manufacturing an Opto-Electronic Component - A method of producing an optoelectronic component comprises the steps of: A) providing a radiation-emitting layer sequence ( | 11-24-2011 |
20120032211 | Optoelectronic Component - An optoelectronic component comprises an organic layer sequence ( | 02-09-2012 |
20130228819 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The minor layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip. | 09-05-2013 |
20130229793 | LIGHTING APPARATUS - What is specified is: a lighting apparatus, with a piezoelectric transformer ( | 09-05-2013 |
20130299867 | LIGHT-EMITTING DIODE CHIP - A light-emitting diode chip includes at least two semiconductor bodies, each semiconductor body including at least one active area that generates radiation, a carrier having a top side and an underside facing away from the top side, and an electrically insulating connector arranged at the top side of the carrier, wherein the electrically insulating connector is arranged between the semiconductor bodies and the top side of the carrier, the electrically insulating connector imparts a mechanical contact between the semiconductor bodies and the carrier, and at least some of the semiconductor bodies electrically connect in series with one another. | 11-14-2013 |
20130328066 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR THE PRODUCTION THEREOF - An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring. | 12-12-2013 |
20140061667 | SEMICONDUCTOR CHIP, DISPLAY COMPRISING A PLURALITY OF SEMICONDUCTOR CHIPS AND METHODS FOR THE PRODUCTION THEREOF - An optoelectronic semiconductor chip including a semiconductor body of semiconductor material, an outcoupling face arranged downstream of the semiconductor body in an emission direction and a mirror layer, wherein the semiconductor body includes an active layer that generates radiation, the mirror layer is arranged on the side of the semiconductor body remote from the outcoupling face, and a gap between the active layer and the mirror layer is set such that radiation emitted by the active layer towards the outcoupling face interferes with radiation reflected at the mirror layer such that the semiconductor chip features an emitted radiation pattern with a selected direction in the forward direction. | 03-06-2014 |
20140061703 | OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip includes a carrier including a carrier element having a mounting side; one electrically conductive n-type wiring layer arranged at the mounting side; a structured, electrically conductive contact layer having a p-side and n-side contact region and arranged at a side of the n-type wiring layer facing away from the carrier element; at least one insulation region electrically insulating the p-side contact region from the n-side contact region; at least one electrically insulating spacer layer arranged at a side of the n-type wiring layer facing away from the carrier element in a vertical direction between the p-side contact region and the n-type wiring layer, wherein the n-side contact region and the n-type wiring layer electrically conductively connect to one another, and the p-side contact region and the spacer layer border the n-side contact region in a lateral direction; an optoelectronic structure connected to the carrier. | 03-06-2014 |
20140085169 | Display Device - A display device includes a multiplicity of pixels, at least one connection carrier, and a multiplicity of inorganic light-emitting diode chips. The connection carrier includes a multiplicity of switches. Each pixel contains at least one light-emitting diode chip. Each light-emitting diode chip is mechanically fixed and electrically connected to the connection carrier. Each switch is designed for driving at least one light-emitting diode chip and the light-emitting diode chips are imaging elements of the display device. | 03-27-2014 |
20140098556 | Optoelectronic Semiconductor Module and Display Having a Plurality of Such Modules - An optoelectronic semiconductor module includes a plurality of light-emitting areas, which emit light when in operation. At least two abutting lateral edges of at least one light-emitting area are arranged at an angle of more than 0 degrees and less than 90 degrees to each other. Further embodiments relate to a display having a plurality of such modules. | 04-10-2014 |
20140145227 | LIGHT-EMITTING DIODE CHIP - A light-emitting diode chip includes a semiconductor body including a radiation-generating active region, at least two contact locations electrically contacting the active region, a carrier and a connecting medium arranged between the carrier and the semiconductor body, wherein the semiconductor body includes roughening on outer surfaces facing the carrier, the semiconductor body mechanically connects to the carrier by the connecting medium, the connecting medium locally directly contacts the semiconductor body and the carrier, and the at least two contact locations are arranged on the upper side of the semiconductor body facing away from the carrier. | 05-29-2014 |
20140145610 | LIGHT-EMITTING DIODE ARRANGEMENT HAVING A PIEZO TRANSFORMER - A light-emitting diode arrangement has a frame-shaped piezo transformer having at least one output-side connection, and having a light-emitting diode module that generates electromagnetic radiation, which module is disposed within the frame-shaped piezo transformer and electrically connects to the output-side connection of the piezo transformer by at least one output-side electrical conductor, wherein radiation emitted by the light-emitting diode module in the direction of the piezo transformer is reflected, at the latter. | 05-29-2014 |
20140283903 | Photovoltaic Semiconductor Chip - A photovoltaic semiconductor chip comprising a semiconductor body which comprises a semiconductor layer sequence with an active region provided to generate electrical energy. The active region is formed between a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type different from the first conductivity type. The semiconductor body is disposed on a carrier body. The first semiconductor layer is disposed on the side of the second semiconductor layer facing away from the carrier body. The semiconductor body comprises a recess which extends from the carrier body through the second semiconductor layer. A first connection structure is disposed between the carrier body and the semiconductor body and is connected in an electrically conductive manner in the recess to the first semiconductor layer. | 09-25-2014 |
20140319547 | METHOD OF PRODUCING A PLURALITY OF OPTOELECTRONIC SEMICONDUCTOR CHIPS, AND OPTOELECTRONIC SEMICONDUCTOR CHIP - A method of producing a plurality of optoelectronic semiconductor chips includes a) providing a layer composite assembly having a principal plane which delimits the layer composite assembly in a vertical direction, and includes a semiconductor layer sequence having an active region that generates and/or detects radiation, wherein a plurality of recesses extending from the principal plane in a direction of the active region are formed in the layer composite assembly; b) forming a planarization layer on the principal plane such that the recesses are at least partly filled with material of the planarization layer; c) at least regionally removing material of the planarization layer to level the planarization layer; and d) completing the semiconductor chips, wherein for each semiconductor chip at least one semiconductor body emerges from the semiconductor layer sequence. | 10-30-2014 |
20150097198 | Surface Light Source - In at least one embodiment, a surface light source includes one or a more optoelectronic semiconductor chips having a radiation main side for generating a primary radiation. A scattering body is disposed downstream of the radiation main side along a main emission direction of the semiconductor chips. The scatting body is designed for scattering the primary radiation. A main emission direction of the scattering body is oriented obliquely with respect to the main emission direction of the semiconductor chip. | 04-09-2015 |
20150129901 | Optoelectronic Semiconductor Chip and Method for Producing an Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a support having a support top side, a semiconductor layer sequence having an active layer for generating electromagnetic radiation, wherein the active layer is located between an n-type n-layer and a p-type p-layer of the semiconductor layer sequence, wherein the semiconductor layer sequence, as seen in a plan view of the support top side, is patterned into emitter regions arranged next to one another and electrical conductor tracks located on a side of the semiconductor layer sequence facing away from the support, where the electrical conductor tracks include contact surfaces. The chip further includes an n-contact point and a p-contact point for electrically contacting the semiconductor chip, wherein the emitter regions are electrically connected in series via the at least two conductor tracks. | 05-14-2015 |
20150194411 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip includes an interconnection layer with a first electrically conductive contact layer, a second electrically conductive contact layer and an insulation layer, which is formed of an electrically insulating material. Further, the optoelectronic semiconductor chip includes two optoelectronic semiconductor bodies, each of which include an active region that is intended to generate radiation. The insulation layer is arranged on a top of the second electrically conductive contact layer facing the optoelectronic semiconductor bodies. The first electrically conductive contact layer is arranged on a top of the insulation layer remote from the second electrically conductive contact layer. The optoelectronic semiconductor bodies are interconnected electrically in parallel by the interconnection layer. | 07-09-2015 |