Patent application number | Description | Published |
20080240645 | OPTICAL INTEGRATED CIRCUIT AND OPTICAL INTEGRATED CIRCUIT MODULE - An optical integrated circuit | 10-02-2008 |
20080254566 | SURFACE-EMISSION SEMICONDUCTOR LASER DEVICE - A surface-emitting semiconductor laser device includes a semi-insulating substrate, a layer structure with a bottom multilayer reflector, an n-type cladding layer, an active layer structure for emitting laser, a p-type cladding layer and a top multilayer reflector with a dielectric material, consecutively formed on the semi-insulating substrate, the active layer structure, the p-type cladding layer and the top multilayer reflector, configuring a mesa post formed on a portion of the n-type cladding layer, the p-type cladding layer or the p-type multilayer reflector. The surface-emitting semiconductor laser includes a p-side electrode formed on another portion of the p-type cladding layer, and an n-side electrode formed on another portion of the n-type cladding layer. The n-side electrode includes a substantially uniform Au film and AuGeNi film or AuGe film consecutively formed on the n-type cladding layer, and an alloy is formed between said Au film and said AuGeNi film or AuGe film. | 10-16-2008 |
20080298420 | Surface emitting semiconductor laser element - A surface emitting laser is provided with an upper reflecting mirror having a photonic crystal structure with a point defect at the center, and emits a laser beam from the side of a lower reflecting mirror. An upper electrode is formed on the point defect at the center, and element resistance is reduced. A material transparent to a wavelength of the laser beam is used for a substrate. The emission efficiency is improved by reducing the element resistance of the photonic crystal surface emitting laser. | 12-04-2008 |
20090168829 | VERTICAL-CAVITY SURFACE-EMITTING LASER - A vertical-cavity surface-emitting laser (VCSEL) includes a substrate, and a layer structure including a first reflector, an active layer, and a second reflector, which are consecutively layered on the substrate, and a plurality of holes arranged in a two-dimensional structure periodically within a layer plane except for a specified area of the layer structure, wherein a pair of holes sandwiching therebetween the specific area and opposing each other have a dimension or shape different from the dimension or shape of others of the holes. | 07-02-2009 |
20100111468 | OPTICAL INTEGRATED CIRCUIT AND OPTICAL INTEGRATED CIRCUIT MODULE - An optical integrated circuit includes a planar lightwave circuit, and a semiconductor element, which are fixed at one contact surface. A semiconductor optical amplifier (SOA) and a turnaround waveguide having a turnaround portion are formed on a semiconductor substrate. The turnaround waveguide is turned around on the second substrate and is connected to an output port of the SOA. An input port and an output port of the turnaround waveguide are optically coupled at the contact surface with an input port and an output port of the optical waveguides respectively. | 05-06-2010 |
20100245987 | SEMICONDUCTOR OPTICAL AMPLIFIER - It is desirable to provide a semiconductor optical amplifier from which it becomes able to obtain a higher output power. A semiconductor optical amplifier in comprises an active wave guiding layer which comprises a passive core region that is formed of a semiconductor, and active cladding regions that are located at both sides of the passive core region and each of that is comprised of an active layer which is formed of a semiconductor and which has an index of refraction to be lower than that of the passive core region, wherein a light is wave guided with being amplified in the active wave guiding layer. Moreover, it is desirable for the active wave guiding layer to be formed of a compound semiconductor, and to be formed by integrating the passive core region and the active cladding regions to be monolithic on to a substrate that is formed of a compound semiconductor by making use of a process of a butt joint growth. | 09-30-2010 |
20130121632 | SOA-PLC HYBRID INTEGRATED POLARIZATION DIVERSITY CIRCUIT AND METHOD FOR MANUFACTURING THE SAME - The invention of the present application provides an SOA-PLC hybrid integrated polarization diversity circuit including a PLC-PBS chip and an SOA-COS whose respective waveguides are coupled to each other. The PLC-PBS chip includes: first and second optical waveguides; a Mach-Zehnder interferometer circuit; and a half-wave plate placed in the first optical waveguide which TM mode light is split into. The SOA-COS includes: a third optical waveguide connected to the first optical waveguide; a fourth optical waveguide connected to the second optical waveguide; and an SOA formed in at least one of the third and fourth optical waveguides. One end of the third optical waveguide and one end of the fourth optical waveguide are connected to a U-turn optical waveguide, the one ends being not connected to the first optical waveguide and the second optical waveguide, respectively. | 05-16-2013 |
20140078580 | OPTICAL AMPLIFIER DEVICE - An optical amplifier device comprising an input/output section that inputs incident light and outputs emission light; a polarized light splitting section that causes a polarized light component of the incident light input from the input/output section to branch, and outputs first polarization mode light having a first polarization and second polarization mode light having a second polarization different from the first polarization; a polarization converting section that receives the first polarization mode light, converts the first polarization to the second polarization, and outputs first polarization converted light; and an optical amplifying section that amplifies the first polarization converted light input to one end of a waveguide, outputs the resulting amplified first polarization converted light from another end of the waveguide, amplifies the second polarization mode light input to the other end of the waveguide, and outputs the resulting amplified second polarization mode light from the one end of the waveguide. | 03-20-2014 |