Noritake
Noritake Fukuda, Utsunomiya-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20140186506 | METHOD AND DEVICE FOR ROUNDED FORMING OF FOOD PRODUCTS - A method for forming a food product into a circular shape, wherein both ends of an elongated food product are connected each other and closed, or into a C-shape, wherein both ends of the elongated food product face each other and opened. The method includes (a) fixing one end of the elongated food product to a rotatable core member, (b) pressing the food product toward the core member by moving the core member close to and away from a pressing roller, when the food product is formed into a circular shape by being wound around the core member by rotating the core member, and (c) separating the formed food product and the core member by releasing the food product from the core member, after forming the food product 3 into a required shape by being wound around the core member. | 07-03-2014 |
Noritake Mitsutani US
| Patent application number | Description | Published |
|---|---|---|
| 20150298568 | POWER SUPPLY SYSTEM FOR VEHICLE - A power supply system for a vehicle, which executes the following control, is provided. When a connector coupled to an external power supply is connected to the vehicle , a CHR is set to an on state. When a voltage is lower than a threshold, B2 charging process is executed. When the voltage is higher than the threshold and an SOC1 of a first battery is lower than a threshold, a charging device is stopped and both a first SMR and a second SMR are set to an on state, and B1 charging process is executed. When the SOC1 is higher than or equal to the threshold, the charging device is stopped and both the first SMR and the second SMR are set to an off state. | 10-22-2015 |
Noritake Mitsutani, Toyota-Shi, Aichi-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20150183325 | VEHICLE, POWER SOURCE SYSTEM, AND CONTROL METHOD OF POWER SOURCE SYSTEM - A second power storage device is electrically connected to a positive electrode line and a negative electrode line, and electric power for generating a driving force is directly supplied to an inverter section. A converter section supplies electric power received from the inverter section to a first power storage device. Because a backflow prevention circuit is provided, the electric power is not supplied in the direction of the second power storage device at this point. A diode of the backflow prevention circuit is connected between a system main relay and the connection node of a positive electrode line on the positive electrode line branching off from the positive electrode line and connected to the second power storage device. The diode controls the flow of a current from the positive electrode line side toward the second power storage device. | 07-02-2015 |
| 20150298568 | POWER SUPPLY SYSTEM FOR VEHICLE - A power supply system for a vehicle, which executes the following control, is provided. When a connector coupled to an external power supply is connected to the vehicle , a CHR is set to an on state. When a voltage is lower than a threshold, B2 charging process is executed. When the voltage is higher than the threshold and an SOC1 of a first battery is lower than a threshold, a charging device is stopped and both a first SMR and a second SMR are set to an on state, and B1 charging process is executed. When the SOC1 is higher than or equal to the threshold, the charging device is stopped and both the first SMR and the second SMR are set to an off state. | 10-22-2015 |
Noritake Nagashima, Minamitsuru-Gun JP
| Patent application number | Description | Published |
|---|---|---|
| 20150100611 | CONTROL DEVICE FOR EXECUTING CONTROL PROGRAM INCLUDING FLOATING POINT OPERATION COMMAND FOR CONTROLLING MACHINE AND METHOD OF CONVERTING FLOATING POINT PARAMETER IN CONTROL PROGRAM - A control device includes: a first conversion unit that converts floating point data generated by an operation of a floating point operation command into a numeric string in first format; and a second conversion unit that converts the numeric string in first format into a numeric string in second format. A character string data generation unit generates a character string data including the numeric strings in first format and in second format and outputs the character string data to an external device or an external storage medium. | 04-09-2015 |
Noritake Ohmachi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20120292587 | NONVOLATILE MEMORY DEVICE - According to one embodiment, a nonvolatile memory device includes a memory cell. The memory cell includes a stacked film structure. The stacked film structure is capable of maintaining a first state or a second state. The first state includes a lower electrode film, a first memory element film provided on the lower electrode film and containing a first oxide and an upper electrode film provided on the first memory element film. The second state includes the lower electrode film, the first memory element film provided on the lower electrode film, a second memory element film provided on the first memory element film and containing a second oxide and the upper electrode film provided on the second memory element film. | 11-22-2012 |
Noritake Okada, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20090124285 | GATEWAY RELAYING COMMUNICATION BETWEEN A RADIO INTELLIGENT TERMINAL AND A SERVER - In a communication system for establishing the communication between a radio intelligent terminal and a server via gateways, it is necessary to notify a non-communicating and a disconnecting radio intelligent terminal of an address of an exchange-destination gateway at the time of changing from a gateway to be used at all time to an exchange-destination gateway for some reason. To achieve the above object, a communication system comprises address notifying means for notifying the radio intelligent terminal of the address of the exchange-destination gateway according to a gateway exchange instruction inputted by an operation. The address notice is sent to the non-communicating terminal at the time of inputting the gateway exchange instruction, and is sent to the disconnecting terminal when it can start the communication. | 05-14-2009 |
Noritake Oomachi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100244256 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes an interlayer insulating film formed above a semiconductor substrate. The interlayer insulating film has a concave portion. A barrier metal layer is formed along a bottom and a sidewall of the concave portion. The barrier metal layer has a first portion provided along the sidewall of the concave portion and a second portion provided along the bottom of the concave portion. A metal wiring layer is formed in the concave portion via the barrier metal layer. The first portion of the barrier metal layer is composed of a titanium nitride layer whose titanium content is more than 50 at %, and the second portion of the barrier metal layer is composed of a titanium nitride layer whose titanium content is relatively larger than the titanium content of the first portion or of a Ti layer. | 09-30-2010 |
| 20130248808 | RESISTANCE CHANGE ELEMENT AND NONVOLATILE MEMORY DEVICE - A resistance change element includes a first conductive layer, a second conductive layer, and a memory layer. The memory layer is provided between the first conductive layer and the second conductive layer. The memory layer is capable of reversibly transitioning between a first state and a second state due to at least one of a voltage and a current supplied via the first conductive layer and the second conductive layer. A resistance of the second state is higher than a resistance of the first state. The memory layer includes niobium oxide. One of a (100) plane, a (010) plane, and a (110) plane of the memory layer is oriented in a stacking direction from the first conductive layer toward the second conductive layer. | 09-26-2013 |
| 20140284546 | MEMORY ELEMENT - According to one embodiment, a memory element includes: a first electrode layer; a second electrode layer; and a memory layer provided between the first electrode layer and the second electrode layer, and the memory layer including a plurality of first oxide layers in a second oxide layer, a resistivity of each of the plurality of first oxide layers being higher than a resistivity of the second oxide layer. | 09-25-2014 |
Noritake Suzuki, Hiratsuka-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100060141 | ELECTRON BEAM DEVICE AND IMAGE DISPLAY APPARATUS USING THE SAME - In an electron beam device employing an electron-emitting device in which a gate and a cathode are provided to sandwich a recess portion formed on an insulating member, electrons are scattered after the collision against the gate and then extracted, it is made possible to easily obtain stable electron emission characteristics and also to prevent the electron-emitting device from being deteriorated or being fractured due to overheating even when an excessive heat has been generated. The electron-emitting device includes the cathode having a protrusion | 03-11-2010 |