Patent application number | Description | Published |
20080230806 | HBT and field effect transistor integration - Methods and systems for fabricating an integrated BiFET using two separate growth procedures are disclosed. Performance of the method fabricates the FET portion of the BIFET in a first fabrication environment. Performance of the method fabricates the HBT portion of the BiFET in a second fabrication environment. By separating the fabrication of the FET portion and the HBT portion in two or more separate reactors, the optimum device performance can be achieved for both devices. | 09-25-2008 |
20090038678 | THIN FILM III-V COMPOUND SOLAR CELL - The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell. | 02-12-2009 |
20090044860 | METHODS FOR FABRICATING THIN FILM III-V COMPOUND SOLAR CELL - The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell. | 02-19-2009 |
20100186822 | HIGH EFFICIENCY GROUP III-V COMPOUND SEMICONDUCTOR SOLAR CELL WITH OXIDIZED WINDOW LAYER - The present application utilizes an oxidation process to fabricating a Group III-V compound semiconductor solar cell device. By the oxidation process, a window layer disposed on a cell unit is oxidized to enhance the efficiency of the solar cell device. The oxidized window has an increased band gap to minimize the surface recombination of electrons and holes. The oxidized window also improves transparency at the wavelengths that were absorbed in the conventional window layer. | 07-29-2010 |
20100237388 | HIGH ON-STATE BREAKDOWN HETEROJUNCTION BIPOLAR TRANSISTOR - A heterojunction bipolar transistor (HBT) is provided with an improved on-state breakdown voltage V | 09-23-2010 |
20110147799 | HIGH ON-STATE BREAKDOWN HETEROJUNCTION BIPOLAR TRANSISTOR - A heterojunction bipolar transistor (HBT) is provided with an improved on-state breakdown voltage V | 06-23-2011 |
20110318866 | METHODS FOR FABRICATING THIN FILM III-V COMPOUND SOLAR CELL - The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film compound solar cell before it is separated from the substrate. To separate the thin film compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film compound solar cell. | 12-29-2011 |
20120088374 | HBT and Field Effect Transistor Integration - Methods and systems for fabricating an integrated BiFET using two separate growth procedures are disclosed. Performance of the method fabricates the FET portion of the BiFET in a first fabrication environment. Performance of the method fabricates the HBT portion of the BiFET in a second fabrication environment. By separating the fabrication of the FET portion and the HBT portion in two or more separate reactors, the optimum device performance can be achieved for both devices. | 04-12-2012 |
20120227798 | HIGH EFFICIENCY GROUP III-V COMPOUND SEMICONDUCTOR SOLAR CELL WITH OXIDIZED WINDOW LAYER - The present application utilizes an oxidation process to fabricating a Group III-V compound semiconductor solar cell device. By the oxidation process, a window layer disposed on a cell unit is oxidized to enhance the efficiency of the solar cell device. The oxidized window has an increased band gap to minimize the surface recombination of electrons and holes. The oxidized window also improves transparency at the wavelengths that were absorbed in the conventional window layer. | 09-13-2012 |
20130082239 | LIGHT EMITTING DIODE FABRICATED BY EPITAXIAL LIFT-OFF - A method of fabricating a light emitting diode using an epitaxial lift-off process includes forming a sacrificial layer on a substrate, forming a light emitting diode structure on the sacrificial layer with an epitaxial material, forming a light reflecting layer on the light emitting diode structure, and removing the sacrificial layer using an etching process to separate the substrate from the light emitting diode structure. | 04-04-2013 |
20130133730 | THIN FILM INP-BASED SOLAR CELLS USING EPITAXIAL LIFT-OFF - Methods of producing single-junction or multi-junction InP-based solar cells grown latticed-matched on a InP substrate or grown on metamorphic layers on a GaAs substrate, with the substrate subsequently removed in a nondestructive manner via the epitaxial lift-off (ELO) technique, and devices produced using the methods are described herein. | 05-30-2013 |
20130285440 | INTEGRATION OF HIGH-EFFICIENCY, LIGHTWEIGHT SOLAR SHEETS ONTO UNMANNED AERIAL VEHICLE FOR INCREASED ENDURANCE - Some embodiments include a kit for increasing endurance of a battery-powered unmanned aerial vehicle (UAV) by incorporating flexible solar cells or applying flexible solar cells on a surface of a UAV or on a surface of a component of a UAV. The kit further include a power conditioning system configured to operate the solar cells within a desired power range and configured to provide power having a voltage compatible with an electrical system of the UAV. | 10-31-2013 |