Patent application number | Description | Published |
20100215982 | Metal Covered Polyimide Composite, Process for Producing the Composite, and Apparatus for Producing the Composite - Provided is a metal covered polyimide composite comprising a tie-coat layer and a metal seed layer formed on a surface of a polyimide film by electroless plating or a drying method, and a copper layer or a copper alloy layer formed thereon by electroplating, wherein the copper plated layer or copper alloy plated layer includes three layers to one layer of the copper layer or copper alloy layer. The provided metal covered polyimide composite can effectively prevent peeling in a non-adhesive flexible laminate (especially a two-layer flexible laminate), particularly can effectively inhibit peeling from the interface of a copper layer and tin plating. Additionally provided are a method of producing the composite and an apparatus for producing the composite. | 08-26-2010 |
20100221563 | Metal Covered Polyimide Composite, Process for Producing the Composite, and Process for Producing Electronic Circuit Board - Provided is a metal covered polyimide composite comprising a tie-coat layer and a metal seed layer formed on a surface of a polyimide film by electroless plating or a drying method, and a copper layer or a copper alloy layer formed thereon by electroplating, wherein the copper plated layer or copper alloy plated layer comprises three layers to one layer of the copper layer or copper alloy layer, and there is a concentrated portion of impurities at the boundary of the copper layer or copper alloy layer when the copper layer or copper alloy layer is three layers to two layers, and there is no concentrated portion of impurities when the copper layer or copper alloy layer is a single layer. The provided metal covered polyimide composite can effectively prevent peeling in a non-adhesive flexible laminate (especially a two-layer flexible laminate), particularly can effectively inhibit peeling from the interface of a copper layer and tin plating. Additionally provided are a method of producing the composite and a method of producing an electronic circuit board. | 09-02-2010 |
20100323215 | Non-Adhesive-Type Flexible Laminate and Method for Production Thereof - The present invention relates to a non-adhesive-type flexible laminate including a polyimide film with at least one surface thereof being plasma-treated, a tie-coat layer formed on the plasma-treated surface, and a metal conductor layer formed on the tie-coat layer, wherein a proportion (T/Rz) of the tie-coat layer thickness (T) to 10-point mean roughness (Rz) of the plasma-treated polyimide film surface is 2 or more. An object of the invention is not only to improve initial adhesion which is an indicator of adhesion strength of the non-adhesive-type flexible laminate (in particular, a two-layered, flexible laminate), but also to increase adhesion of the laminate after heat aging (after being allowed to stand for 168 hours at 150° C. for 168 hours in the atmosphere). | 12-23-2010 |
20110003169 | Non-Adhesive Flexible Laminate - Provided is a non-adhesive flexible laminate comprising a polyimide film at least one surface of which has been plasma-treated, a tie-coat layer formed on the plasma-treated surface, a metal seed layer formed on the tie-coat layer, and a metal conductor layer formed on the metal seed layer, wherein a ratio ρ | 01-06-2011 |
20120012367 | Flexible Laminate and Flexible Electronic Circuit Board Formed by using the same - An adhesive-free flexible laminate formed from a polyimide film in which at least one surface has been plasma treated, a tie-coat layer formed on the surface of the plasma-treated polyimide film, a metal seed layer made of either copper or copper alloy and which is formed on the tie-coat layer, and a metal conductive layer made of either copper or copper alloy and which is formed on the metal seed layer, wherein the atomic percent of Cu inclusion in the tie-coat layer is 0.5 at % or less. Consequently, provided is a flexible laminate capable of effectively inhibiting the deterioration of the peel strength upon producing a flexible laminate (in particular a two-layer metalizing laminate). | 01-19-2012 |
20120132531 | Process and Apparatus for Producing a Metal Covered Polyimide Composite - A metal covered polyimide composite comprising a tie-coat layer and a metal seed layer formed on a surface of a polyimide film by electroless plating or a drying method is provided. A copper layer or a copper alloy layer is formed thereon by electroplating. The copper plated layer or copper alloy plated layer includes three layers to one layer of the copper layer or copper alloy layer. The metal covered polyimide composite effectively prevents peeling in a non-adhesive flexible laminate (especially a two-layer flexible laminate), and more particularly, effectively inhibits peeling from the interface of a copper layer and tin plating. A method of producing the composite and apparatus for producing the composite are also provided. | 05-31-2012 |
20120135160 | Method for Production of Non-Adhesive-Type Flexible Laminate - A non-adhesive-type flexible laminate including a polyimide film with at least one surface thereof being plasma-treated, a tie-coat layer formed on the plasma-treated surface, and a metal conductor layer fanned on the tie-coat layer is provided. A ratio (T/Rz) of a tie-coat layer thickness (T) to a 10-point mean roughness (Rz) of the plasma-treated polyimide film surface is made to be 2 or more. This improves initial adhesion, which is an indicator of adhesion strength of the non-adhesive-type flexible laminate (in particular, a two-layered, flexible laminate), and also increases adhesion of the laminate after heat aging (i.e., after being allowed to stand for 168 hours at 150° C. for 168 hours in the atmosphere). A method of manufacturing the laminate is also provided. | 05-31-2012 |
20130112556 | SPUTTERING TARGET AND/OR COIL, AND PROCESS FOR PRODUCING SAME - Provided is a sputtering target and/or a coil disposed at the periphery of a plasma-generating region for confining plasma. The target and/or the coil has a surface to be eroded having a hydrogen content of 500 μL/cm | 05-09-2013 |
20130186753 | Titanium Target for Sputtering - Provided is a titanium target for sputtering having a Shore hardness Hs of 20 or more and a basal plane orientation ratio of 70% or less. In the titanium target for sputtering, the purity of titanium is 99.995 mass % or more, excluding gas components. It is an object of the present invention to provide a high-quality titanium target for sputtering, in which impurities are reduced, and which can prevent occurrence of cracking or breaking in high-power sputtering (high-rate sputtering), stabilize sputtering characteristics, and effectively suppress occurrence of particles during formation of a film. | 07-25-2013 |
20140027277 | Titanium Target for Sputtering - A high-purity titanium target for sputtering, which contains, as additive components, one or more elements selected from Al, Si, S, Cl, Cr, Fe, Ni, As, Zr, Sn, Sb, B, and La in a total amount of 3 to 100 mass ppm, and of which the purity excluding additive components and gas components is 99.99 mass % or higher. An object of this invention is to provide a high-quality titanium target for sputtering, which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and capable of stabilizing the sputtering characteristics. | 01-30-2014 |
20140097084 | High-Purity Copper-Manganese-Alloy Sputtering Target - Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt % of Mn and the remainder being Cu and inevitable impurities. The high-purity copper-manganese-alloy sputtering target is characterized in that the in-plane variation (CV value) in Mn concentration of the target is 3% or less. It is thus possible to form a thin film having excellent uniformity by adding an appropriate amount of a Mn element to copper and reducing the in-plane variation of the sputtering target. In particular, there is provided a high-purity copper-manganese-alloy sputtering target which is useful for improving the yield and the reliability of semiconductor products which are making progress in a degree of refinement and integration. | 04-10-2014 |
20140158532 | HIGH-PURITY COPPER-MANGANESE-ALLOY SPUTTERING TARGET - Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt. % of Mn, 2 wt ppm or less of C, and the remainder being Cu and inevitable impurities, wherein in formation of a film on a wafer by sputtering the target, the number of particles composed of C, at least one element selected from Mn, Si, and Mg, or a compound composed of C and at least one element selected from Mn, Si, and Mg and having a diameter of 0.20 μm or more is 30 or less on average. Particle generation during sputtering can be effectively suppressed by thus adding an appropriate amount of Mn element to copper and controlling the amount of carbon. In particular, a high-purity copper-manganese-alloy sputtering target that is useful for forming semiconductor copper alloy line having a self-diffusion suppression function is provided. | 06-12-2014 |
20140251802 | TITANIUM TARGET FOR SPUTTERING - A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics. | 09-11-2014 |
20140284211 | High Purity Copper-Manganese Alloy Sputtering Target - A high purity copper-manganese alloy sputtering target containing 0.05 to 20 wt % of Mn and, excluding additive elements, remainder being Cu and unavoidable impurities, wherein the target contains 0.001 to 0.06 wtppm of P and 0.005 to 5 wtppm of S, and further contains Ca and Si, and a total content of P, S, Ca, and Si is 0.01 to 20 wtppm. The incorporation of appropriate amounts of Mn as well as Ca, P, Si, and S in copper improves the machinability that is required in the stage of producing a target to facilitate the manufacture (workability) of the target, improves the smoothness of the target surface, and inhibits the generation of particles during sputtering. Thus, provided is a high purity copper-manganese alloy sputtering target which is particularly useful for improving the yield and reliability of semiconductor products that progress toward miniaturization and integration. | 09-25-2014 |
20140318953 | SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR - A backing plate integrated sputtering target includes a flange part having a Vicker's hardness (Hv) of 90 or more and a 0.2% yield stress of 6.98×10 | 10-30-2014 |