Patent application number | Description | Published |
20110034830 | BODY FLUID SAMPLING UNIT - A body fluid sampling unit includes a puncture device including a needle having a sharp needle point and a drive mechanism for operating the needle to puncture a living body surface with the needle point, a tip including an introducing section for introducing a body fluid flowing out from a puncture portion of the living body surface punctured with the needle point, a test paper for detecting a predetermined component in the body fluid, and a tip body mounted to a component measuring device for measuring the quantity and/or property of the predetermined component detected by the test paper; and a case including a mechanism containing section for containing the puncture mechanism so that the needle point of the puncture mechanism can be moved by the drive means, and a sampling implement containing section for containing the body fluid sampling implement so that the tip can be taken out. | 02-10-2011 |
20110040209 | BODY FLUID SAMPLING UNIT - A body fluid sampling unit includes a puncture device including a needle having a sharp needle point and a drive mechanism for operating the needle to puncture a living body surface with the needle point, a tip including an introducing section for introducing a body fluid flowing out from a puncture portion of the living body surface punctured with the needle point, a test paper for detecting a predetermined component in the body fluid, and a tip body mounted to a component measuring device for measuring the quantity and/or property of the predetermined component detected by the test paper; and a case including a mechanism containing section for containing the puncture mechanism so that the needle point of the puncture mechanism can be moved by the drive means, and a sampling implement containing section for containing the body fluid sampling implement so that the tip can be taken out. | 02-17-2011 |
20110137207 | BLOOD COMPONENT MEASUREMENT DEVICE AND TIP FOR BLOOD MEASUREMENT - A blood component measurement device has a puncturing unit provided inside a housing and having a puncture needle; a button unit for advancing and retreating the puncture needle; a contact mechanism coming into contact with the skin of a person to be measured; and a holder for displaceably holding the puncturing unit. The blood component measurement device also has an introduction section at the substantially center of a contact member. After the skin is punctured by the puncture needle provided at the substantially center of the mechanism, the introduction section introduces blood to testing paper when the contact member of the contact mechanism is displaced in a sliding manner along a guide member. | 06-09-2011 |
Patent application number | Description | Published |
20090184263 | Charged Particle Beam Irradiation System - A charged particle beam irradiation system comprises a high-speed steerer (beam dump device) | 07-23-2009 |
20090283704 | PARTICLE BEAM IRRADIATION SYSTEM - It is an object of the present invention to provide a charged particle beam extraction method and particle beam irradiation system that make it possible to exercise intensity control over an extracted ion beam while a simple device configuration is employed. To accomplish the above object, there is provided a particle beam irradiation system comprising: a synchrotron for accelerating and extracting an charged particle beam; an irradiation apparatus for extracting the charged particle beam that is extracted from the synchrotron; first beam intensity modulation means for controlling the beam intensity of the charged particle beam extracted from the synchrotron during an extraction control period of an operation cycle of the synchrotron; and second beam intensity modulation means for controlling the beam intensity during each of a plurality of irradiation periods contained in the extraction control period of the operation cycle. | 11-19-2009 |
20100001212 | CHARGED PARTICLE BEAM IRRADIATION SYSTEM AND CHARGED PARTICLE BEAM EXTRACTION METHOD - A charged particle beam irradiation system includes measurement means | 01-07-2010 |
20130221213 | CALIBRATION METHOD FOR RADIATION DETECTOR, AND PARTICLE THERAPY SYSTEM - A stacked type of radiation detector and a calibration method that enables the radiation detector to correct variations in sensor-specific output easily and within a short time, without using a water-phantom dose detector. The radiation detector is equipped with a sensor section including a plurality of sensors arranged in layers in a traveling direction of a particle beam. A dummy absorber has water-equivalent thickness equal to an average water-equivalent thickness of the sensors. A signal-processing unit calculates sensor-specific calibration coefficients using a measurement result obtained during irradiation of the radiation detector with the radiation when electrical signals developed in each sensor are measured, and a measurement result obtained during irradiation of the radiation detector with the radiation when the sensor section is moved in the traveling direction of the radiation, then the dummy absorber is set in place, and electrical signals developed in each sensor are measured. | 08-29-2013 |
20140021375 | PARTICLE BEAM IRRADIATION SYSTEM AND OPERATING METHOD - A particle beam irradiation system having a multi-energy extraction control operation that controls the extraction beam energy in a synchrotron within a short time, such that when the ion beam irradiation is halted, an operating cycle is updated within a short time and a dose rate is improved. To this end, operating control data for each of the devices constituting the synchrotron is constructed by multi-energy extraction control pattern data for controlling extraction of beams of a plurality of energy levels at one operating cycle, and a plurality of sets of deceleration control data that correspond to the extraction control of the beam of the plurality of energy levels. The devices are controlled by using the operating control data. | 01-23-2014 |
Patent application number | Description | Published |
20140187844 | PARTICLE BEAM THERAPY SYSTEM - A particle beam therapy system is disclosed which includes: a synchrotron accelerating a charged particle beam injected from a pre-accelerator up to a predetermined energy level before applying a high-frequency voltage to an extraction device to extract the charged particle beam caused to exceed a stability limit; a beam transportation system transporting the charged particle beam extracted from the synchrotron up to a treatment room, and an irradiation device irradiating a patient in the treatment room with the charged particle beam in conformity to the patient's tumor shape. The synchrotron has functionality to accelerate or decelerate the charged particle beam successively to extract the charged particle beam at a plurality of energy levels during an extraction phase of the synchrotron, the beam transportation system further having functionality to block off an unnecessary charged particle beam extracted from the synchrotron during acceleration or deceleration. | 07-03-2014 |
20140203186 | CHARGED PARTICLE BEAM IRRADIATION SYSTEM AND OPERATING METHOD OF CHARGED PARTICLE BEAM IRRADIATION SYSTEM - A charged particle beam irradiation system in which the energy, Bragg peak, and irradiation depth of a charged particle beam, with which a patient is to be irradiated, can be checked in real time just before actual irradiation. Just before the actual irradiation, by providing a high-speed steering magnet with 100% current, a checking beam is intentionally hit into a beam damper. By using a dosimeter and a dose measuring device in front thereof, extraction beam intensity is measured. By using a multi-layer beam monitor, a dose distribution thereof is measured. Accordingly, just before the actual irradiation, the energy, Bragg peak, and irradiation depth of the charged particle beam, with which the patient is to be irradiated, can be checked accurately and in real time. When the beam has a desired dose distribution as a result of checking, continuously, extraction control is performed. | 07-24-2014 |
20140296610 | PARTICLE BEAM IRRADIATION SYSTEM AND METHOD FOR OPERATING THE SAME - Operation control data of each of the constituent sub-units of a synchrotron is constructed by a combination of module data items (initial acceleration data item, plural energy change data items, and a deceleration control data item), corresponding to plural control intervals, respectively. A control start value, a control completion value, and a computing function for connecting the control start value with the control completion value are expressed in each of module data items. Further, the plural module data items are corrected on the basis of a correction data item of a residual field, and a power-supply control command value is sequentially outputted. By preparing correction table data of the residual field, expressed by irradiation energy and irradiation stage numbers of the irradiation energy beforehand, the correction table data items of the plural module data items are selected from the correction table data to be prepared. | 10-02-2014 |
20150031931 | PARTICLE BEAM IRRADIATION SYSTEM AND METHOD FOR OPERATING THE SAME - A control data about the devices constituting the synchrotron are formed by an initial acceleration control data item, a plural extraction control data items, a plural energy change control data items connecting the plural extraction control data items, and a plural deceleration control data items corresponding to the plural extraction control data items. An affected part position detection unit and an extraction permission determination unit are provided to determine whether the position of a marker shown in transparent image information is included within a beam irradiation permission range. If the marker position is found included, the extraction permission determination unit outputs to an interlock system an extraction permission determination signal permitting beam extraction. | 01-29-2015 |
20150060703 | PARTICLE BEAM IRRADIATION SYSTEM AND OPERATING METHOD - The operation control data about the component device constituting the synchrotron | 03-05-2015 |
20150283404 | CHARGED PARTICLE BEAM IRRADIATION SYSTEM AND OPERATING METHOD FOR THE SAME - At the start of beam extraction, the amplitude value of an acceleration radio frequency voltage is held at a first amplitude value. When the irradiation dose stemming from beam extraction reaches a prescribed dose, the amplitude value of the acceleration radio frequency voltage applied to an accelerating cavity starts to be increased from the first amplitude value to a second amplitude value. When the irradiation dose reaches a target dose, the amplitude value is raised to and held at the second amplitude value. By the time the irradiation is restarted, the amplitude value of the acceleration radio frequency voltage applied to the accelerating cavity is reduced from the second amplitude value to the first amplitude value. At the start of beam extraction, the amplitude value is held at the first amplitude value. | 10-08-2015 |
Patent application number | Description | Published |
20140117526 | SEMICONDUCTOR POWER CONVERTER AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor power converter includes first and second electrical conductors opposed to each other, first and second semiconductor elements joined to a first joint surface of the first electrical conductor, first and second convex electrical conductors joined to the first and second semiconductor elements, a junction joined to the first and second convex electrical conductors and a second joint surface of the second electrical conductor, power terminals, signal terminals, and an envelope sealing the constituent members. The envelope includes a flat bottom surface which extends perpendicular to the semiconductor elements and in which first and second bottom surfaces of the electrical conductors are exposed. | 05-01-2014 |
20140124909 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first electrical conductor, a second electrical conductor, first and second semiconductors between the first and second electrical conductors, a first power terminal, a second power terminal, a signal terminal, and an insulator which covers the components. The insulator includes a flat bottom surface in which the first and second electrical conductors are exposed, a ceiling surface, a first end surface, and a second end surface. The power terminals and the signal terminal extend outwardly from the first and second end surfaces, and the ceiling surface, respectively. The first end surface, the ceiling surface, and the second end surface are formed with a parting line. | 05-08-2014 |
Patent application number | Description | Published |
20100052142 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a first electrode and a second electrode of a semiconductor element, the first electrode and the second electrode being configured on a first surface and a second surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, the surface portion being other than regions, each of the regions connecting with the first second electrodes, each of inner electrodes being connected with the first or the second electrodes, a thickness of the inner electrode from the first surface or the second surface being the same thickness as the encapsulating material from the first surface or the second surface, respectively, outer electrodes, each of the outer electrodes being formed on the encapsulating material and connected with the inner electrode, a width of the outer electrode being at least wider than a width of the semiconductor chip, and outer plating materials, each of the outer plating materials covering five surfaces of the outer electrode other than one surface of the outer electrode being connected with the inner electrode. | 03-04-2010 |
20100052185 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a semiconductor element, a first electrode of the semiconductor chip being configured on a first surface of the semiconductor element, a second electrode of the semiconductor element being configured on a second surface opposed to the first surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, a first hole and a second hole being configured in the encapsulating material, a portion of the first electrode and a portion of the second electrode being exposed, a first conductive material being connected to the first surface of the semiconductor chip via the first hole, a second conductive material being connected to the second surface of the semiconductor chip via the second hole, and a plating film covering five surfaces of the first conductive material other than one surface contacting with the encapsulating material and five surfaces of the second conductive material other than one surface contacting with the encapsulating material. | 03-04-2010 |
20110272817 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a first electrode and a second electrode of a semiconductor element, the first electrode and the second electrode being configured on a first surface and a second surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, the surface portion being other than regions, each of the regions connecting with the first second electrodes, each of inner electrodes being connected with the first or the second electrodes, a thickness of the inner electrode from the first surface or the second surface being the same thickness as the encapsulating material from the first surface or the second surface, respectively, outer electrodes, each of the outer electrodes being formed on the encapsulating material and connected with the inner electrode, a width of the outer electrode being at least wider than a width of the semiconductor chip, and outer plating materials, each of the outer plating materials covering five surfaces of the outer electrode other than one surface of the outer electrode being connected with the inner electrode. | 11-10-2011 |
20110297983 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes a light emitting unit, first and second conductive members, an insulating layer, a sealing member, and an optical layer. The light emitting unit includes a semiconductor stacked body and first and second electrodes. The semiconductor stacked body includes first and second semiconductor layers and a light emitting layer, and has a major surface on a second semiconductor layer side. The first and second electrodes are connected to the first and second semiconductor layers on the major surface side, respectively. The first conductive member is connected to the first electrode and includes a first columnar portion covering a portion of the second semiconductor. The insulating layer is provided between the first columnar portion and the portion of the second semiconductor. The sealing member covers side surfaces of the conductive members. The optical layer is provided on the other major surface. | 12-08-2011 |
20110300651 | METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE - According to one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include forming a first electrode and a second electrode on a semiconductor layer which is included in a first structure body, the semiconductor layer including a light-emitting layer on a substrate. The method can include forming a first metal pillar in conduction with the first electrode, and a second metal pillar in conduction with the second electrode. The method can include filling a region between the first metal pillar and the second metal pillar with an insulating layer. In addition, the method can include separating the substrate from the semiconductor layer, and forming a second structure body in which the semiconductor layer is supported by the insulating layer and which is convex toward an opposite side of the insulating layer to the semiconductor layer. | 12-08-2011 |
Patent application number | Description | Published |
20110297986 | LIGHT SOURCE APPARATUS USING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a light source apparatus includes a semiconductor light emitting device, a mounting substrate, first and second connection members. The semiconductor light emitting device includes a light emitting unit, first and second conductive members, a sealing member, and an optical layer. The mounting substrate includes a base body, first and second substrate electrodes. The connection member electrically connects the conductive member to the substrate electrode. The conductive member is electrically connected to the light emitting unit electrode and includes first and second columnar portions provided on the second major surface. The sealing member covers side surfaces of the first and the second conductive members. The optical layer is provided on the first major surface of the semiconductor stacked body and includes a wavelength conversion unit. A surface area of the second substrate electrode is not less than 100 times a cross-sectional area of the second columnar portion. | 12-08-2011 |
20120218743 | LIGHTING APPARATUS - A lighting apparatus includes a case, a power source unit, and a light emitting unit. The case has a side portion provided around a first axis parallel to a direction from the power source unit toward the light emitting unit. The side portion has a first portion and a second portion disposed around a central axis parallel to the first axis. The first portion has a long distance to the central axis. The second portion has a short distance to the central axis. An end portion of an inner surface of the second portion is configured to have at least one selected from a portion perpendicular to the central axis and a portion has a recessed configuration with respect to the central axis when the inner surface is cut by a cross-section perpendicular to the central axis. | 08-30-2012 |
20120241792 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer. | 09-27-2012 |
20130069102 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, LIGHT-EMITTING MODULE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting device includes a laminated body that is configured to emit light from a main surface thereof, first and second electrodes, each disposed on a surface of the laminated body that is opposite the main surface, a first terminal that is electrically coupled to the first electrode, has a concave edge but not a convex edge, and has at most three exposed sides, and a second terminal that is electrically coupled to the second electrode, has a concave edge but not a convex edge, and has at most three exposed sides. | 03-21-2013 |
20130070457 | ILLUMINATING DEVICE - According to one embodiment, the illuminating device of the embodiment has a base part and multiple light emitting elements; the illuminating device includes a supporting part, which is arranged on one end of the base part, and which at least partially encloses an internal space. The supporting part also has an outer surface exposed to the ambient atmosphere. The multiple light emitting elements are disposed on the inner surface side of the supporting part so that at least light emitting surfaces of the light emitting elements are in contact with the supporting part. | 03-21-2013 |
20130082294 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - According to one embodiment, a light-emitting unit which emits light, a wavelength conversion unit which includes a phosphor and which is provided on a main surface of the light-emitting unit, and a transparent resin which is provided on top of the wavelength conversion unit, are prepared. The transparent resin has a greater modulus of elasticity and/or a higher Shore hardness than the wavelength conversion unit. | 04-04-2013 |
20140175471 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING MODULE - According to one embodiment, a semiconductor light emitting device includes a plurality of chips, a first insulating layer provided between the chips, one p-side external terminal, and one n-side external terminal. Each of the chips includes a semiconductor layer, a p-side electrode, and an n-side electrode. Each of the chips is separated from each other. The one p-side external terminal is provided corresponding to one chip on the second face side. The p-side external terminal is electrically connected to the p-side electrode. The one n-side external terminal is provided corresponding to one chip on the second face side. The n-side external terminal is electrically connected to the n-side electrode. | 06-26-2014 |
Patent application number | Description | Published |
20090118547 | 4-(4-ALKYLCYCLOHEXYL)BENZALDEHYDE - A process for effectively producing a 4-(4-alkylcyclohexyl)benzaldehyde, 4-(cyclohexyl)benzaldehyde, a 4-(trans-4-alkylcyclohexyl)benzaldehyde and a (trans-4-alkylcyclohexyl)benzene useful for electronic material applications such as liquid crystals and for pharmaceutical and agrochemical applications, etc., are disclosed. The present invention provides (1) a process for producing a 4-(4-alkylcyclohexyl)benzaldehyde or 4-(cyclohexyl)benzaldehyde by formylating a (4-alkylcyclohexyl)benzene or cyclohexylbenzene with carbon monoxide, (2) a process for producing a 4-(trans-4-alkylcyclohexyl)benzaldehyde by formylating a (4-alkylcyclohexyl)benzene having a cis/trans molar ratio of 0.3 or less with carbon monoxide, and (3) a process for producing a (trans-4-alkylcyclohexyl)benzene by isomerizing a mixture of the cis and trans isomers of a (4-alkylcyclohexyl)benzene, all of the processes being performed in the presence of HF and BF | 05-07-2009 |
20090156858 | Process For Production of 5-Phenylisophthalic Acid - The present invention provides an industrially advantageous process for producing 5-phenylisophthalic acid, which process attains excellent selectivity and yield and also realizes recovery and reuse of a catalyst. | 06-18-2009 |
20090299111 | (ALKYLPHENYL) ALKYLCYCLOHEXANE AND METHOD FOR PRODUCING (ALKYLPHENYL) ALKYLCYCLOHEXANE OR ALKYLBIPHENYL - The invention provides a method for producing an (alkylphenyl)alkylcyclohexane, including a step of condensing an alkylbenzene with an alkylcyclohexene or an alkylcyclohexanol in the presence of an acid catalyst, and (alkylphenyl)alkylcyclohexane represented by formula (8). The (alkylphenyl)alkylcyclohexane produced through the production method can be transformed into an alkylbiphenyl, a biphenylpolycarboxylic acid, or a biphenylpolycarboxylic anhydride. Through the production method, an (alkylphenyl)alkylcyclohexane and an alkylbiphenyl of interest can be readily and selectively produced. | 12-03-2009 |
20120178970 | METHOD FOR PRODUCING CYCLOHEXYL ALKYL KETONES - Provided is an industrially superior method for producing cyclohexyl alkyl ketones, which solves the problems in process reduction and in disposal of wastes such as metals. | 07-12-2012 |
Patent application number | Description | Published |
20090032147 | R-Fe-B MICROCRYSTALLINE HIGH-DENSITY MAGNET AND PROCESS FOR PRODUCTION THEREOF - An R—Fe—B based rare-earth alloy powder with a mean particle size of less than about 20 μm is provided and compacted to make a powder compact. Next, the powder compact is subjected to a heat treatment at a temperature of about 550° C. to less than about 1,000° C. within hydrogen gas, thereby producing hydrogenation and disproportionation reactions (HD processes). Then, the powder compact is subjected to another heat treatment at a temperature of about 550° C. to less than about 1,000° C. within either a vacuum or an inert atmosphere, thereby producing desorption and recombination reactions and obtaining a porous material including fine crystal grains, of which the density is about 60% to about 90% of their true density and which have an average crystal grain size of about 0.01 μm to about 2 μm (DR processes). Thereafter, the porous material is subjected to yet another heat treatment at a temperature of about 750° C. to less than about 1,000° C. within either the vacuum or the inert atmosphere, thereby further increasing its density to about 93% or more of their true density and making an R—Fe—B based microcrystalline high-density magnet. | 02-05-2009 |
20090123774 | R-Fe-Beta POROUS MAGNET AND METHOD FOR PRODUCING THE SAME - An R—Fe—B based porous magnet according to the present invention has an aggregate structure of Nd | 05-14-2009 |
20120306308 | R-Fe-B POROUS MAGNET AND METHOD FOR PRODUCING THE SAME - An R—Fe—B based porous magnet according to the present invention has an aggregate structure of Nd | 12-06-2012 |
20130068992 | METHOD FOR PRODUCING RARE EARTH PERMANENT MAGNETS, AND RARE EARTH PERMANENT MAGNETS - An R-T-B based permanent magnet powder, which has been made by an HDDR process and which has an average crystal grain size of 0.1 μm to 1 μm and a crystal grain aspect ratio (ratio of the major axis size to the minor axis size) of 2 or less, is provided (Step (A)). R is a rare-earth element, of which at least 95 at % is Nd and/or Pr, and T is either Fe alone or Fe partially replaced with Co and/or Ni and is a transition metal element, of which at least 50 at % is Fe. Meanwhile, an R′—Cu based alloy powder, which is made up of R′ and Cu, which accounts for 2 at % to 50 at % of the alloy powder, is also provided (Step (B)). R′ is a rare-earth element, of which at least 90 at % is Nd and/or Pr but which includes neither Dy nor Tb. The R-T-B based permanent magnet powder and the R′—Cu based alloy powder are mixed together to obtain a mixed powder (Step (C)). And then the mixed powder is subjected to a heat treatment process at a temperature of 500° C. to 900° C. in either an inert ambient gas or a vacuum (Step (D)). | 03-21-2013 |