Nishiguchi, JP
Daisuke Nishiguchi, Chiba JP
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20100227985 | GRANULAR POLYURETHANE RESIN COMPOSITION AND MOLDED ARTICLE OF THE SAME - Disclosed is a granular polyurethane resin composition containing a thermoplastic polyurethane resin which contains a hard segment obtained by a reaction between a polyisocyanate and a chain extender. The polyisocyanate contains isocyanate groups of 1,4-bis(isocyanatomethyl)cyclohexane in an amount of not less than 50% by more relative to the total mole number of isocyanate groups. | 09-09-2010 |
Hajime Nishiguchi, Anjyo JP
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20110232076 | LAMINATED CORE PUNCHING APPARATUS - A laminated core punching apparatus, configured such that a stator-punching press machine that has a molding die performing a partial punching gradually approaches the shape of the stator core piece. There is a punching die to punching out the stator core piece from a strip-form steel plate, and two stator lamination stations. A rotor-punching press machine and a stator-punching press machine are constructed to operate synchronously. An intermediate loop portion capable of causing a strip-form steel plate to hang down in a loop is provided in order to adjust a length of the strip-form steel plate between the two press machines, and a loop guide portion that guides a loop locus of the strip-form steel plate from above so that the strip-form steel plate does not invert is disposed above the intermediate loop portion to be capable of ascending and descending. | 09-29-2011 |
Haruhiko Nishiguchi, Wako-Shi JP
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20130038735 | SYSTEM FOR ASSISTING DRIVING OF VEHICLE - Disclosed is a device which is mounted on a vehicle, and captures a rear region of a vehicle and a blind spot region outside of a viewing range of a side mirror adjacent to the rear region of the vehicle. A captured image is subjected to image processing so that the blind spot region on the captured image is compressed. The image after subjected to the image processing is displayed so as to be visible to a driver. The blind spot region on the captured image is compressed so that a sudden change of position of a object in a horizontal direction on the captured image is suppressed, as against a change of distance from the vehicle to the object. Compression is performed so that the ratio of transition of position of the object in the horizontal direction on the captured image to transition of distance from the vehicle to the object is substantially the same as the ratio of transition of position of the object in the horizontal direction in the side mirror to transition of distance from the vehicle to the object. The phenomenon of the object's appearance as if the object suddenly accelerates in the vicinity of the vehicle is avoided. | 02-14-2013 |
Haruhiko Nishiguchi, Saitama JP
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20140092237 | DRIVING ASSISTANCE DEVICE - An indication control unit | 04-03-2014 |
20140132753 | DRIVING ASSISTANCE DEVICE FOR A VEHICLE - A display control element of a driving assistance device is equipped with a function of displaying a detailed guide information of navigation information to an indicator, in a case where a current position of a vehicle is inside a detailed guide zone, and a function of displaying the captured image of side-rearward to the indicator, in a case where a course change of the vehicle is detected in case the current position of the vehicle is outside the detailed guide zone, and also maintains the display of the detailed guide information without relying on a detection of the course change of the vehicle, in case where the current position of the vehicle is inside the detailed guide zone. | 05-15-2014 |
Hiroki Nishiguchi, Shiga JP
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20090250646 | FLUID CONTROL VALVE - A fluid control valve wherein a main valve body includes: a high-pressure passage for providing communication between a suction port and a sleeve in which a spool is fitted; a tank passage for providing communication between a discharge port and the sleeve; a lift lock poppet located between the sleeve and a cylinder port and capable of assuming an open position for providing communication between the sleeve and the cylinder port; a hydraulic fluid discharge passage for providing communication between a back-pressure chamber provided within the lift lock poppet and the sleeve; a hydraulic fluid delivery passage located between the sleeve and the lift lock poppet; and a cylinder passage located between the lift lock poppet and the cylinder port and allowed to communicate with the hydraulic fluid delivery passage when the lift lock poppet is in the open position, is further provided with a communication passage for providing communication between the hydraulic fluid discharge passage and the hydraulic fluid delivery passage to reduce a pressure change inside the hydraulic fluid delivery passage which occurs just after the lift lock poppet has been moved into the open position, thereby retarding a rapid movement of the lift lock poppet toward an operating end while suppressing generation of a high collision noise upon collision of the lift lock poppet with the operating end. | 10-08-2009 |
Katsuya Nishiguchi, Hiroshima JP
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20120205927 | CRASH CAN MADE OF ALUMINUM-ALLOY CASTING - A crash can is made of aluminum-alloy casting and provided between a side frame extending in a vehicle longitudinal direction at a side portion of a vehicle and an end portion of a bumper reinforcement extending in a vehicle width direction. The crash can comprises a hollow tube portion extending in the vehicle longitudinal direction and having a cross-shaped section. At least one of an outwardly-projecting corner portion and an inwardly-projecting corner portion of the tube portion is formed by a groove such that a thickness thereof is thinner than that of the other portion of the tube portion. Accordingly, an impact which a vehicle body or a passenger may receive in a vehicle collision can be reduced by the crash can. | 08-16-2012 |
Katsuya Nishiguchi, Higashihiroshima-Shi JP
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20110097594 | JOINING METHOD OF DISSIMILAR METAL PLATES AND DISSIMILAR METAL JOINED BODY - The joining method of the present invention includes a lapping step of lapping the aluminum alloy plate ( | 04-28-2011 |
Katsuya Nishiguchi, Higashi-Hiroshima-Shi JP
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20100032970 | IMPACT ENERGY ABSORBER AND FABRICATION METHOD THEREOF - A main body of an impact energy absorber is formed by integrally molding a deformable portion and a plurality of deformation controlling portions which are adapted to control the direction of plastic deformation of the deformable portion. The deformation controlling portions have such a configuration and shape that, when a compression load equal to or greater than a predetermined value is input to the main body in a tube axis direction, the deformable portion undergoes plastic deformation in at least one of a radially outward direction and a radially inward direction of the main body concurrently with the compressive plastic deformation in the tube axis direction. | 02-11-2010 |
Kenichi Nishiguchi, Kobe-Shi JP
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20110228255 | DISTRIBUTED OPTICAL FIBER SENSOR - The present invention provides a distributed optical fiber sensor capable of measuring the strain and temperature of an object to be measured simultaneously and independently with high spatial resolution. A distributed optical fiber sensor FS is a distributed optical fiber sensor which uses an optical fiber | 09-22-2011 |
20140255023 | DISTRIBUTED OPTICAL FIBER SOUND WAVE DETECTION DEVICE - A distributed optical fiber sound wave detection device is provided with an optical pulse emission unit that causes an optical pulse to be incident into the optical fiber, and a Rayleigh scattered light reception unit that receives Rayleigh scattered light produced inside the optical fiber. The optical pulse emission unit outputs the optical pulse that is modulated using a code sequence which has a predetermined length and by which the optical pulse is divided into a plurality of cells. The Rayleigh scattered light reception unit includes a phase variation derivation unit that performs demodulation corresponding to the modulation in the optical pulse emission unit on the Rayleigh scattered light and determines a phase variation thereof from the demodulated Rayleigh scattered light, and a sound wave detection unit that determines a sound wave that has struck the optical fiber from the phase variation determined by the phase variation derivation unit. | 09-11-2014 |
Kenji Nishiguchi, Yokohama-Shi JP
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20080269407 | INK JET PIGMENT INK AND INK SET - An ink jet pigment ink containing water, a pigment, a water-soluble organic solvent and a graft copolymer, wherein the graft copolymer has a hydrophilic segment and a hydrophobic segment, the hydrophobic segment is being obtained by copolymerizing an anionic monomer and an aromatic monomer represented by the following formula (1), and the hydrophilic segment is being obtained by polymerizing an anionic monomer | 10-30-2008 |
20080292793 | INK SET, INK JET RECORDING METHOD, INK CARTRIDGE, RECORDING UNIT, AND INK JET RECORDING APPARATUS - An ink set includes a combination of a first ink and a second ink, the first ink containing a self-dispersion pigment having at least one hydrophilic group directly or through another atomic group bonded to the surface of the pigment particle, and ammonium ions, the second ink containing a pigment, a polymer having an acid value of 160 mg KOH/g or less, and alkali metal ions, wherein the first ink further contains a compound (A) selected from nonionic surfactants and/or a compound (B) selected from the group consisting of polyethylene glycol with an average molecular weight of 600 to 2,000, a,w-alkanediol having six carbon atoms, and an imidazolidinone derivative. | 11-27-2008 |
20080292794 | INK JET RECORDING APPARATUS AND INK JET RECORDING METHOD - An ink jet recording apparatus is provided with a plurality of inks and includes a unit configured to perform a recovery operation by suction of inks from a plurality of ink ejection portions using a suction cap, wherein the plurality of inks include an ink set including a combination of at least a first ink and a second ink, the first ink containing (i) a self-dispersion pigment having at least one hydrophilic group directly or through another atomic group bonded to the surface of the pigment, and (ii) ammonium ions, the second ink containing a pigment, a polymer having an acid value of 160 mg KOH/g or less, and alkali metal ions, and the suction cap used in the recovery operation is individually provided for each of the first ink and the second ink. | 11-27-2008 |
20100086686 | INK JET INK, INK JET RECORDING METHOD, AND INK CARTRIDGE - Provided is an ink jet ink capable of achieving at a high level both ejection stability and storage stability. Provided is an ink jet ink, including at least a pigment, and a star polymer in which four or more (co)polymer chains of an α,β-ethylenically unsaturated monomer are bonded to a central skeleton. The (co)polymer chains have two or more first (co)polymer chains each containing at least an aromatic monomer unit and two or more second (co)polymer chains each containing at least one monomer unit selected from the group consisting of acid monomers and salts of the acid monomers. | 04-08-2010 |
20100086687 | INK JET INK, INK JET RECORDING METHOD, AND INK CARTRIDGE - To provide an ink jet ink capable of achieving both high colorability and excellent bleeding resistance of an image and having excellent storage stability, provided is an ink jet ink including at least a pigment and a star polymer having a structure represented by at least one formula selected from the group consisting of the following general formulae (1) to (3). | 04-08-2010 |
20100086688 | INK JET INK, INK JET RECORDING METHOD, AND INK CARTRIDGE - Provided is an ink jet ink capable of achieving both high colorability and excellent bleeding resistance of an image. The ink jet ink includes at least a pigment and a star polymer in which at least three copolymer chains of α,β-ethylenically unsaturated monomers are bonded to a central skeleton, in which the copolymer chains of the α,β-ethylenically unsaturated monomers are copolymers of at least one first monomer selected from the group consisting of aromatic (meth)acrylates and aromatic (meth)acrylamides and at least one second monomer selected from the group consisting of acid monomers and salts of the acid monomers. | 04-08-2010 |
20110001775 | CLEAR INK, INK JET RECORDING METHOD, INK SET, INK CARTRIDGE, RECORDING UNIT AND INK JET RECORDING APPARATUS - Provided is an ink jet clear ink containing a polymer fine particle. The polymer fine particle has a core-shell structure obtained by polymerizing an α,β-ethylenically unsaturated hydrophobic monomer (b) as a core polymer in the presence of a shell polymer that is a copolymer having at least a unit derived from an α,β-ethylenically unsaturated hydrophobic monomer (a) and a unit derived from a monomer selected from an α,β-ethylenically unsaturated acid monomer and a salt thereof. The α,β-ethylenically unsaturated hydrophobic monomer (b) includes at least a monomer containing a chain structure saturated alkyl group. | 01-06-2011 |
20120147083 | SYNTHESIS METHOD FOR SELF-DISPERSIBLE PIGMENT, SELF-DISPERSIBLE PIGMENT, INK JET INK, INK CARTRIDGE, AND INK JET RECORDING METHOD - Provided is a synthesis method for a self-dispersible pigment, including performing ring-opening addition of a lactone-based compound to an acidic group bonded to a surface of a pigment particle directly or via another atomic group to bond a functional group including an ester group to the surface of the pigment particle. | 06-14-2012 |
Kenji Nishiguchi, Kanagawa JP
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20110152123 | CELLULAR SCREENING SUBSTRATUM AND MANUFACTURING PROCESS FOR IT, AND METHOD AND APPARATUS FOR CELLULAR SCREENING WITH IT - The present invention provides cellular screening substrata which can be formed in simple processing steps. The cellular screening substrata can be formed which are characterized in that plural cellular screening substances are positioned and immobilized at predetermined positions on a base by micro-droplet discharging means, and plural areas having different cellular screening functions are formed thereon. | 06-23-2011 |
Kohei Nishiguchi, Hyogo JP
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20090173171 | Sample Introducing System - In a sample introducing system that can be easily adapted to a variety of analytical conditions without being affected by a flow rate of gas introduced into an analytical device, can introduce an analytical sample into the analytical device without loss, and can contribute to a simple and highly accurate high-sensitivity analysis, a pretreatment device removes unnecessary components from an untreated sample gas containing the analytical sample. A treated sample gas that has been pretreated by the pretreatment device is introduced into the analytical device via a connection gas flow channel. A gas addition device that adds a carrier gas to the treated sample gas flowing toward the analytical device in the connection gas flow channel has a means for changing the addition flow rate of the carrier gas. Pressure fluctuations of the gas containing the analytical sample are restricted by a pressure adjusting device upstream of the gas addition device. | 07-09-2009 |
20110133074 | ANALYTICAL METHOD AND ANALYTICAL SYSTEM - Analytical method and analytical system are presented, wherein properties of the carrier gas conveying fine particles and gas components generated by laser ablation can be prevented from inhibiting the optimization of analysis conditions, and plural kinds of elements can be stably measured with high sensitivity and good accuracy without losing operability, speed, and convenience when fine particles generated by laser ablation are plasma-analyzed. A sample α is converted into fine particles by a laser ablation device in the atmosphere of a first gas. The fine particles are conveyed from the laser ablation device to a gas replacement device by using the first gas as a carrier gas. The first gas of at least part of the carrier gas conveying the fine particles is replaced with a second gas by means of the gas replacement device. The fine particles are conveyed from the gas replacement device to the plasma analyzer by the carrier gas that has been subjected to the gas replacement. Constituent elements of the fine particles are analyzed by the plasma analyzer. | 06-09-2011 |
Koji Nishiguchi, Higashi-Hiroshima-Shi JP
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20100274538 | PROGRAM FOR OUTPUTTING STRESS-STRAIN EQUATION AND ITS DEVICE - There is provided a model that can evaluate properties of viscoelasticity and also rubber elasticity of an elastic material. A correlation equation between stress and strain that is calculated from: a correlation equation between stress, strain, elastic modulus and relaxation time, calculated based on a Maxwell model in which an elastic element and a viscous element are placed in series; and a correlation equation between strain and elastic modulus, including different moduli depending on properties, the correlation equation between stress and strain including different moduli depending on said properties as parameters is output as a stress-strain curve formula. There is one feature in finding a correlation between the strain and the elastic modulus, and this allows a large deformation behavior of an elastic material having properties of both rubber elasticity and viscoelasticity to be expressed with high quantitative characteristics on simulation. | 10-28-2010 |
Kyoko Nishiguchi, Ibaraki-Shi JP
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20100038589 | LYOTROPIC LIQUID CRYSTALLINE MIXTURE, COATING LIQUID, AND OPTICAL ANISOTROPIC FILM - The lyotropic liquid crystalline mixture of the present invention comprises at least a first azo compound and a second azo compound in relation of constitutional isomers wherein the first azo compound and the second azo compound are the constitutional isomers different in a binding site of at least an azo group. The first azo compound is preferably an azo compound wherein the azo group is bonded to an ortho-position of a hydroxyl group of an aminonaphthol skeleton. The second azo compound is preferably an azo compound wherein the azo group is bonded to an ortho-position of an amino group of an aminonaphthol skeleton. | 02-18-2010 |
20100039608 | LIQUID CRYSTAL COATING SOLUTION, AND POLARIZING FILM - A liquid crystalline coating solution which comprises: an azo compound represented by the following general formula (1); and a solvent to dissolve the azo compound: | 02-18-2010 |
20100110361 | LIQUID CRYSTALLINE COATING SOLUTION AND POLARIZING FILM - A liquid crystalline coating solution which comprises: an azo compound represented by the following general formula (I); and a solvent to dissolve the azo compound: | 05-06-2010 |
20130277871 | PROCESS FOR PRODUCING WATER-RESISTANT POLARIZING FILM - To obtain a water-resistant polarizing film free from deterioration in dichroic ratio caused by water-resistant treatment, it is critical that adjacent sulfonic acid groups or sulfonate groups in the organic dyes to be used for the polarizing film are spaced at moderate intervals. In a process for producing a water-resistant polarizing film of the present invention, the polarizing film before water-resistant treatment includes an organic dye which comprises an azo compound | 10-24-2013 |
Kyoko Nishiguchi, Osaka JP
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20090187012 | POLARIZER, COATING LIQUID, AND MANUFACTURING METHOD FOR POLARIZER - A polarizer of the present invention comprises an azo compound which is represented by the following general formula (I). In the general formula (I), Q | 07-23-2009 |
20100314784 | PROCESS FOR PRODUCING WATER-RESISTANT POLARIZING FILM - To obtain a water-resistant polarizing film free from deterioration in dichroic ratio caused by water-resistant treatment, it is critical that adjacent sulfonic acid groups or sulfonate groups in the organic dyes to be used for the polarizing film are spaced at moderate intervals. In a process for producing a water-resistant polarizing film of the present invention, the polarizing film before water-resistant treatment includes an organic dye which comprises an azo compound 20 represented by the following general formula (1) or (2) | 12-16-2010 |
20110141430 | POLARIZING FILM AND METHOD FOR PRODUCING THE SAME - There is provided a polarizing film exhibiting a stable and high dichroic ratio by forming a film using a water solution in which a metal capture agent has been added, even if multivalent metal cations are included. | 06-16-2011 |
Mariko Nishiguchi, Shiga JP
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20130341534 | SENSOR PROVIDED WITH METAL OXIDE FILM AND USE THEREOF - A sensor capable of detecting light, hydrogen gas, and air pressure includes a metal oxide film produced by a process including the steps of: (a) forming an organic film by using a primer composition containing (i) an addition polymerizable compound including three or more reactive groups, (ii) an addition polymerizable compound including an acid group, and (iii) an addition polymerizable compound including a hydrophilic functional group; (b) forming a metal (M1) salt from the acid group; (c) substituting the metal (M1) salt of the acid group with a metal (M2) salt by treating the organic film with a metal (M2) ion aqueous solution; (d) reducing the metal (M2) ion so that a metal film is formed on a surface of the organic film; and (e) oxidizing the metal film. | 12-26-2013 |
Masaki Nishiguchi, Chiyoda-Ku JP
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20100322573 | OPTICAL FIBER CABLE - It is an object of the present invention to provide an optical fiber cable which can reliably prevent increased transmission loss due to damage of the optical fiber as a result of the egg-laying behavior of cicadas. The cable includes at least an optical fiber | 12-23-2010 |
Masaru Nishiguchi, Hirakata-Shi JP
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20110012017 | Mass Spectrometer - One virtual rod electrode ( | 01-20-2011 |
Masaru Nishiguchi, Kyoto JP
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20080197276 | MASS SPECTROMETER - An ion optical system to form a loop orbit is provided to sufficiently ensure required performance such as ion transmission efficiency while making it easy to design the system by alleviating a space-focusing condition. The loop orbit of the ion optical system is realized so as to satisfy (t|x)=(t|α)=(t|δ)=0 as the time-focusing condition and to satisfy −2<(x|x)+(α|α)<2, and −2<(y|y)+(β|β)<2 as the space-focusing condition. (x|x) and other similar terms are constants determined by the elements indicated in the parenthesis in a general expression format of the ion optical system. The conditions are substantially alleviated as opposed to the conventional space-focusing condition where each of (x|x), (α|α), (y|y) and (β|β) needs to be ±1. Thus, the parameters to decide the shape of electrodes by which the ion optical system is configured have higher degree of freedom. | 08-21-2008 |
20080210862 | MASS SPECTROMETER - A mass spectrometer is provided in which ions are favorably introduced into a loop orbit or favorably led out from the loop orbit without affecting the motion of the ions flying along the loop orbit. An ion-introduction orbit | 09-04-2008 |
20100282965 | MASS ANALYSIS METHOD AND MASS ANALYSIS SYSTEM - A measurement is performed in a no-passing mode, in which ions having different masses are prevented from making a complete turn through a loop orbit, to obtain a time-of-flight spectrum without the passing of ions having different masses (S | 11-11-2010 |
Masaru Nishiguchi, Kyoto-Shi JP
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20100116979 | MASS SPECTROMETER - One virtual rod electrode is composed by a plurality of electrode plain plates arranged in the ion optical axis direction, and four virtual rod electrodes are arranged around the ion optical axis to form a virtual quadrupole rod type ion transport optical system ( | 05-13-2010 |
20100140469 | MASS SPECTROMETER - One cycle of loop orbit is formed by two identical time-focusing unit structures (T | 06-10-2010 |
20100148061 | MASS SPECTROMETER - A basic ion optical system ( | 06-17-2010 |
20110174968 | CHARGED PARTICLE ANALYZER - An ion entrance opening ( | 07-21-2011 |
Masaru Nishiguchi, Hirakata JP
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20130168547 | Time-Of-Flight Mass Spectrometer - Provided is a time-of-flight mass spectrometer having a reflectron which eliminates energy dependency of the flight time of ions having the same m/z while ensuring a high degree of design freedom. An electric field created by the reflectron is virtually divided into a decelerating region for decelerating ions and a reflecting region for reflecting ions. For an ion having a mass-to-charge ratio which has departed with initial energy higher than U | 07-04-2013 |
Masashi Nishiguchi, Fukuoka JP
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20080308969 | Mold Apparatus for Resin Encapsulation and Resin Encapsulation Method - To provide a mold apparatus for resin encapsulation, which is small in number of components, has a simple driving mechanism, is easy in assembly or disassembly work, requires no labor for maintenance and has good workability; and a resin encapsulation method. Therefore, of a lower cavity bar | 12-18-2008 |
Masashi Nishiguchi, Aichi JP
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20120117919 | METHOD OF STORING PHOTOCATALYTIC MEMBER - A novel method for storing a photocatalytic member containing fluorine-containing anatase-type titanium oxide is provided, which is capable of suppressing the decrease in content of fluorine during storage in a photocatalytic member containing fluorine-containing anatase-type titanium oxide. The storage method of the present invention is a method for storing a photocatalytic member containing fluorine-containing anatase-type titanium oxide including storing the photocatalytic member in a surrounding environment with a relative humidity of 30% or less. According to the storage method of the present invention, for example, the elimination of fluorine from the surface of fluorine-containing titanium oxide can be suppressed, and the decrease in content of fluorine during storage in a photocatalytic member can be suppressed. | 05-17-2012 |
Naoki Nishiguchi, Ibaraki JP
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20130109057 | METHOD FOR IMMUNIZING ANIMAL, COMPOSITION FOR IMMUNIZATION, METHOD FOR PRODUCING ANTIBODY, METHOD FOR PRODUCING HYBRIDOMA, AND METHOD FOR PRODUCING MONOCLONAL ANTIBODY | 05-02-2013 |
20130195869 | ANTI-HUMAN CCR7 ANTIBODY, HYBRIDOMA, NUCLEIC ACID, VECTOR, CELL, PHARMACEUTICAL COMPOSITION, AND ANTIBODY-IMMOBILIZED CARRIER - An object of the present invention is to provide a novel anti-human CCR7 antibody useful as a therapeutic agent for tissue fibrosis or cancer, and a pharmaceutical composition containing the anti-human CCR7 antibody, and the like. An anti-human CCR7 antibody specifically binding to an extracellular domain of human CCR7, having a heavy chain CDR3 containing an amino acid sequence represented by SEQ ID NO: 7, SEQ ID NO: 17, SEQ ID NO: 27, SEQ ID NO: 37, SEQ ID NO: 47, SEQ ID NO: 57, SEQ ID NO: 67, or SEQ ID NO: 77 is provided. Also provided is an anti-human CCR7 antibody having heavy chain CDRs 1-3 and light chain CDRs 1-3 containing amino acid sequences represented by SEQ ID NOs: 5-10, 15-20, 25-30, 35-40, 45-50, 55-60, 65-70, or 75-80. Preferably, the antibody has an activity of interfering with a CCR7-dependent intracellular signal transduction mechanism caused by CCR7 ligand stimulation. The anti-human CCR7 antibody of the present invention may be used as an active ingredient of a therapeutic agent for tissue fibrosis or cancer. | 08-01-2013 |
20150017167 | ANTI-HUMAN CCR7 ANTIBODY, HYBRIDOMA, NUCLEIC ACID, VECTOR, CELL, PHARMACEUTICAL COMPOSITION, AND ANTIBODY-IMMOBILIZED CARRIER - An object of the present invention is to provide a novel anti-human CCR7 antibody useful as a therapeutic agent for tissue fibrosis or cancer, and a pharmaceutical composition containing the anti-human CCR7 antibody, and the like. An anti-human CCR7 antibody specifically binding to an extracellular domain of human CCR7, having a heavy chain CDR3 containing an amino acid sequence represented by SEQ ID NO: 7, SEQ ID NO: 17, SEQ ID NO: 27, SEQ ID NO: 37, SEQ ID NO: 47, SEQ ID NO: 57, SEQ ID NO: 67, or SEQ ID NO: 77 is provided. Also provided is an anti-human CCR7 antibody having heavy chain CDRs 1-3 and light chain CDRs 1-3 containing amino acid sequences represented by SEQ ID NOs: 5-10, 15-20, 25-30, 35-40, 45-50, 55-60, 65-70, or 75-80. Preferably, the antibody has an activity of interfering with a CCR7-dependent intracellular signal transduction mechanism caused by CCR7 ligand stimulation. The anti-human CCR7 antibody of the present invention may be used as an active ingredient of a therapeutic agent for tissue fibrosis or cancer. | 01-15-2015 |
Naoki Nishiguchi, Kawasaki-Shi JP
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20100235557 | COMPUTER AND CONTROL METHOD FOR INTERRUPTING MACHINE OPERATION - A computer that receives a first instruction for interrupting or stopping operation of the virtual machine; that obtains a duration time corresponding to the virtual machine for which the first instruction is received; that determines whether a second instruction for operating the virtual machine has been received during the obtained duration time; and that determines whether to output a third instruction for interrupting or stopping operation of the computer based at least on whether the second instruction for operating the virtual machine has been received during the obtained duration time. | 09-16-2010 |
Naoki Nishiguchi, Mishima-Gun JP
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20090041761 | Method of immunizing animal, composition for immunization, method for producing antibody, method for producing hybridoma and method for producing monoclonal antibody - It is an object of the present invention to a method whereby a humoral immune response is induced more efficiently in producing an antibody against an antigen protein by gene immunization. A fusion gene composed of a gene encoding the full-length of a part of the antigen protein or a gene encoding a chaperonin subunit or a chaperonin subunit linkage linked thereto is administered to express the fusion gene in the animal, thereby inducing a humoral immune response to an antigen protein by administering. An example of the chaperonin includes | 02-12-2009 |
Naoki Nishiguchi, Yokkaichi JP
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20120322348 | PAD FOR CHEMICAL MECHANICAL POLISHING AND METHOD OF CHEMICAL MECHANICAL POLISHING USING SAME - A chemical mechanical polishing pad includes a polishing layer formed using a composition that includes a thermoplastic polyurethane, the polishing layer having a specific gravity of 1.15 to 1.30, and a durometer D hardness of 50 to 80. | 12-20-2012 |
20130316621 | CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD USING SAME - A chemical mechanical polishing pad includes a polishing layer that is formed of a composition that includes a polyurethane, the polishing layer having a specific gravity of 1.1 to 1.3 and a thermal conductivity of 0.2 W/m·K or more. | 11-28-2013 |
Naonobu Nishiguchi, Takarazuka-Shi JP
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20110158934 | FLY ATTRACTANT COMPOSITION AND FLY ATTRACTING METHOD, AS WELL AS FLY EXPELLANT COMPOSITION AND FLY EXPELLING METHOD - Provided are a fly attractant composition containing a ligninsulfonate as an active ingredient, and a fly expellant composition containing 5 to 20% by weight of a ligninsulfonate and at least 0.1% by weight but less than 5% by weight of an insecticidal active ingredient. | 06-30-2011 |
20110160251 | ANIMAL ECTOPARASITE CONTROL COMPOSITION - The present invention provides an animal ectoparasite control composition containing an insecticidal component and an adipate, and a method of controlling an animal ectoparasite which comprises administering an effective amount of the animal ectoparasite control composition to an animal. | 06-30-2011 |
20140121194 | METHOD FOR ADMINISTERING AGENT FOR CONTROLLING ECTOPARASITE TO DOG - There is provided a method for controlling an animal ectoparasite having excellent controlling effects. The method for controlling an ectoparasite of dogs comprises orally administering an ectoparasite-controlling agent comprising as an active ingredient an isoxazoline compound represented by formula (I): | 05-01-2014 |
Noboru Nishiguchi, Shiga-Ken JP
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20120157896 | MASSAGE DEVICE - A massage device ( | 06-21-2012 |
Noboru Nishiguchi, Shiga JP
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20120041350 | MASSAGE EQUIPMENT AND AIR-BAG USED FOR THE MASSAGE EQUIPMENT - A massage apparatus includes a main frame and an air-bag for massage. The air-bag includes an air-bag front section and an air-bag main body fixed to the dorsal side of the air-bag front section. The air-bag is arranged that the dorsal side of the air-bag main body is disposed toward the main frame so that the front side of the air-bag front section makes up a contact side with a human body. The dorsal surface of the air-bag main body is configured to be able to expand and shrink, and the air-bag front section is configured so as to remain flat even when the air-bag main body is expanded or shrunken. | 02-16-2012 |
Norihiko Nishiguchi, Sapporo JP
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20120103412 | METHOD FOR FABRICATING A LASER-INDUCED SURFACE NANOARRAY STRUCTURE, AND DEVICE STRUCTURE FABRICATED USING SAID METHOD - Provided is a method for manufacturing a two-dimensional pattern by simultaneously forming a plurality of quantum dots on a surface of a solid material and making the quantum dots a periodic structure by a laser irradiation, and a device structure and a device fabricated by the method. | 05-03-2012 |
Noriki Nishiguchi, Sakai-Shi JP
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20100199700 | INDOOR UNIT FOR AIR CONDITIONER - An air conditioner indoor unit has a box-shaped body casing | 08-12-2010 |
Shigeo Nishiguchi, Hiratsuka-Shi JP
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20080287612 | Cationic Electrodeposition paint compositions - This invention discloses a cationic electrodeposition paint composition containing an amino group-containing modified epoxy resin which is obtained through reaction of specific modified epoxy resin with xylene formaldehyde resin having phenolic hydroxyl groups and amino group-containing compound. The cationic electrodeposition paint composition excels in film thickness retention, finished appearance of coating film and electrocoatability of galvanized alloy steel sheet and can form coating film having good corrosion resistance, even when its content of volatile organic compound (VOC) is reduced. | 11-20-2008 |
20090069510 | Cationic electrodeposition paint compositions - This invention discloses cationic electrodeposition paint compositions which comprise specific amino group-containing modified epoxy resin, specific xylene-formaldehyde resin-modified, amino group-containing epoxy resin and blocked polyisocyanate curing agent at specific blend ratios, and which can form coating film of excellent film thickness retention, finished appearance and electrocoatability on galvanized alloy steel sheet and of good corrosion resistance, even when the amount of volatile organic compound in the cationic electrodeposition paint is reduced. | 03-12-2009 |
20100129659 | Method for forming coating film and coated article - The present invention provides a coated product having excellent corrosion resistance and excellent finish by a 3-coat 1-bake method; | 05-27-2010 |
20100270162 | Cationic electrodeposition coating composition - An object of the present invention is to provide a coating composition that has excellent throwing power and electrodeposition coating applicability onto hot dip galvanized steel sheets, and that provides a cationic electrodeposition coating film having a superior finish and excellent anti-corrosion properties, and a multilayer coating film with a superior finish formed on the cationic electrodeposition coating film by a 3C1B process. | 10-28-2010 |
20100300885 | Cationic electrodeposition coating composition - An object of the present invention is to provide a coating composition that has excellent electrodeposition coating applicability onto hot dip galvanized steel sheets, and that provides a cationic electrodeposition coating film having a superior finish and excellent anti-corrosion properties. | 12-02-2010 |
20110024298 | CATIONIC ELECTRODEPOSITION COATING COMPOSITION - Object: To provide a coated article having excellent anti-corrosion properties on untreated steel sheets. | 02-03-2011 |
20120222962 | CATIONIC ELECTRODEPOSITION COATING COMPOSITION - The present invention provides a cationic electrodeposition coating composition that has excellent throwing power and that can form a thin film with excellent finish and anti-corrosion properties. The composition has a cationic epoxy resin (A) and a blocked polyisocyanate (B), the cationic epoxy resin (A) obtained by reacting an epoxy resin (A1) with an amino group-containing compound (A2). The epoxy resin (A1) having a catechol skeleton structure (a) and obtained by reacting an epoxy resin (a1) containing at least one epoxy group per molecule and having an epoxy equivalent of 180 to 500 with a phenolic hydroxyl group-containing compound (a2) containing at least one phenolic hydroxyl group per molecule in amounts wherein the ratio of the number of moles of epoxy groups in the epoxy resin (a1) to the number of moles of phenolic hydroxyl groups in the phenolic hydroxyl group-containing compound (a2) is 1.3 to 2.0. | 09-06-2012 |
Shigeo Nishiguchi, Hiratsuka JP
Patent application number | Description | Published |
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20110062026 | CATIONIC ELECTRODEPOSITION COATING COMPOSITION - Object: To provide a coated article in which an electrodeposition coating film formed on an untreated steel sheet exhibits excellent corrosion resistance, in particular, excellent hot salt water immersion resistance at 55° C.; and a multilayer coating film formed by a 3-coat 1-bake coating method on the electrodeposition coating film, which is formed on the untreated steel sheet, exhibits excellent corrosion resistance in a combined corrosion cycle test. | 03-17-2011 |
Shingo Nishiguchi, Hitachinaka JP
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20130066501 | Vehicle - It is desirable to enhance efficiency of a power conversion device in both of a case where a motor generator which is an electric rotating machine is operated as a motor and a case where the motor generator is operated as a generator by performing regeneration braking. At the time of performing regeneration braking, strength of regeneration braking can be controlled by making an inverter circuit conductive in response to a predetermined phase of an AC output which the inverter circuit generates and by controlling a conduction width. Due to such a control, the number of times of switching a semiconductor element which constitutes the inverter circuit can be reduced thus suppressing heat generation of the semiconductor element and also the efficiency of the power conversion device can be enhanced. Further, the enhancement of efficiency of the power conversion device can be realized also in a motor operation and hence, it is also possible to enhance efficiency with respect to the traveling of a vehicle. | 03-14-2013 |
Shingo Nishiguchi, Hitachinaka-Shi JP
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20110193509 | Power Conversion Device - A power conversion device includes a power switching circuit that supplies AC voltages generated between switching elements operating as upper arms and switching elements operating as lower arms, and a control circuit that generates and supplies to the driver circuit signals for controlling the switching operation of the switching elements by a PWM method in a first operational region in which frequency of an AC power to be outputted is low, and that generates and supplies to the driver circuit signals for controlling the switching operation of the switching elements at timings based upon the phase of the AC power to be outputted in an operational region in which the frequency of the AC power to be outputted is higher than in the first operational region. | 08-11-2011 |
20110266992 | Power Conversion Device - A power conversion device includes a power switching circuit that has a plurality of series circuits in each of which a switching element that operates as an upper arm and a switching element that operates as a lower arm are connected in series, and a control circuit that generates control signals for controlling the continuity or discontinuity of the switching elements, and, if the relationship between the state of a switching element in a control cycle and the state of the switching element in the next control cycle is a discontinuous relationship, that additionally performs control to make the switching element continuous or discontinuous on the basis of the state of the switching element in the control cycle and the state of the switching element in the next control cycle. | 11-03-2011 |
20130033205 | Power Conversion Device - A control circuit of a power conversion device calculates voltage command signals for determining timings for making switching elements of a power switching circuit continuous by performing feed forward control on the basis of input information, and feedback control on the basis of the input information and current values of AC output, for each of the d axis and the q axis of a motor. | 02-07-2013 |
20140049198 | Power Conversion Device - A power conversion device includes a power switching circuit that supplies AC voltages generated between switching elements operating as upper arms and switching elements operating as lower arms, and a control circuit that generates and supplies to the driver circuit signals for controlling the switching operation of the switching elements by a PWM method in a first operational region in which frequency of an AC power to be outputted is low, and that generates and supplies to the driver circuit signals for controlling the switching operation of the switching elements at timings based upon the phase of the AC power to be outputted in an operational region in which the frequency of the AC power to be outputted is higher than in the first operational region. | 02-20-2014 |
Shoji Nishiguchi, Gunma JP
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20090105395 | CURABLE RESIN COMPOSITION - The present invention is directed to a novel functional polyorganosiloxane having on average two or more vinyl groups in one molecule thereof. | 04-23-2009 |
Syouji Nishiguchi, Isesaki-Shi JP
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20120061128 | PHOTOSENSITIVE RESIN, CURABLE RESIN COMPOSITION CONTAINING THE SAME, DRY FILM THEREOF, AND PRINTED CIRCUIT BOARD USING THEM - A carboxyl group-containing photosensitive resin is obtained by reacting an α,β-ethylenically unsaturated group-containing monocarboxylic acid (c) with a phenolic compound (a) containing the structure represented by the following general formula (I) and having at least two phenolic hydroxyl groups in its molecule, wherein part or the whole of the phenolic hydroxyl groups being modified into an oxyalkyl group, and further reacting a polybasic acid anhydride (d) with the resultant reaction product; | 03-15-2012 |
Tadahiro Nishiguchi, Kanagawa JP
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20100207567 | Numerically Controlled Machine Tool and Numerical Control Device - A numerically controlled machine tool which has a linear feed axis and a rotational feed axis and which has functions for measuring in advance, errors of a relative position and a relative attitude of a main spindle relative to a work table by positioning the linear feed axis and the rotational feed axis to specified position and attitude, and correcting a movement command based on measured error data, the error data being multi-dimensional data containing a position error and an attitude error. The machine tool includes a error data storage means which store an error map that is prepared by collecting a plurality of the error data corresponding to positions and rotation angles of the linear feed axis and the rotational feed axis, and a correction data computing means which compute correction data for correcting the movement command from a command position for the linear feed axis and the rotational feed axis and the error data stored in the error data storage means. | 08-19-2010 |
20100244762 | Method and Device for Preparing Error Map and Numerically Controlled Machine Tool Having Error Map Preparation Function - In a numerically controlled machine tool which has a linear feed axis and a rotational feed axis and in which a main spindle and a table are movable relative to each other, a position error and an attitude error produced by an operation of a linear feed axis and a rotational feed axis are measured at a plurality of measurement points set within a movable range of the linear feed axis and the rotational feed axis, and the position error and the attitude error thus measured are stored as an error map in correspondence to a position of the linear feed axis and a rotation angle of the rotational feed axis. | 09-30-2010 |
Tadao Nishiguchi, Aichi JP
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20100214112 | CONTROL DEVICE AND METHOD - A control device has a first sensor set with a first detection region, a second sensor set with a second detection region, and a control unit for controlling a predetermined operation based on a detection result by the first sensor and a detection result by the second sensor. | 08-26-2010 |
20130076484 | WIRELESS COMMUNICATION DEVICE AND COMMUNICATION CONTROL METHOD - A wireless communication device for a vehicle conducts wireless communication with a vehicle portable key through an antenna including a resonant circuit. The wireless communication device has a transmitting circuit that transmits a signal from the antenna, and a control circuit that supplies an inversion carrier wave in which a phase of a carrier wave is inverted to the transmitting circuit for a predetermined time after a modulated signal in which the carrier wave is modulated by transmission data is transmitted from the antenna. | 03-28-2013 |
20130334879 | VEHICLE POWER-SUPPLY CONTROL DEVICE - A vehicle power-supply control device has a battery charger that converts an externally-supplied AC voltage into a DC voltage used to charge a vehicle high-voltage battery, a low-voltage power generator that converts the DC voltage output from the battery charger into a DC voltage used to drive a vehicle auxiliary machine, and a controller that controls the battery charger and the low-voltage power generator. The battery charger includes a power factor correction circuit that corrects a power factor of the AC voltage and a first DC/DC converter that generates a predetermined DC voltage based on an output of the power factor correction circuit. The low-voltage power generator includes a second DC/DC converter that steps down the DC voltage output from the battery charger and a synchronous rectifier that rectifies an output of the second DC/DC converter in synchronization with a switching operation of the second DC/DC converter. | 12-19-2013 |
20140015496 | CHARGING DEVICE - A charging device has an AC power supply input part that rectifies an AC voltage, a power factor correction part that converts a rectified voltage outputted from the AC power supply input part into a DC intermediate voltage, a power conversion part that converts the intermediate voltage outputted from the power factor correction part into a charge voltage, and supplies the charge voltage to a secondary battery, an input voltage acquisition unit that acquires the rectified voltage outputted from the AC power supply input part, an output voltage acquisition unit that acquires the charge voltage outputted from the power conversion part, and a storage part in which the rectified voltage, the charge voltage, and a target intermediate voltage correlated with the rectified voltage and charge voltage are stored. | 01-16-2014 |
20140045531 | PORTABLE-DEVICE POSITION DETERMINATION SYSTEM, PORTABLE-DEVICE POSITION DETERMINATION METHOD, AND PORTABLE-DEVICE POSITION DETERMINATION APPARATUS - A portable-device position determination system has a portable device that is configured to be possessed by a user, and an in-vehicle device that is mounted on a vehicle and conducts wireless communication with the portable device. The in-vehicle device transmits a request signal to the portable device. The portable device detects a received signal intensity of the request signal to send back the received signal intensity to the in-vehicle device. The in-vehicle device compares the received signal intensity of the request signal detected by the portable device to a threshold to determine a position of the portable device. The in-vehicle device includes a transmission controller that generates the request signal, supplies an electric power to a transmitting antenna, and transmits the request signal from the transmitting antenna, and a current detector that detects a current passed through the transmitting antenna when the request signal is transmitted. | 02-13-2014 |
20140293267 | LASER RADAR DEVICE - A laser radar device has a light projection part that projects light to a monitoring area outside a vehicle from a vehicle interior through a glass surface, a light receiving part that is placed a given distance away from the light projection part in a substantially horizontal direction to receive reflected light from an object outside the vehicle in the light projected by the light projection part through the glass surface, a measuring part that measures the distance to the object in the monitoring area based on timing when the light projection part projects the light and timing when the light receiving part receives the reflected light, and a light-projection shielding part that shields the light projected to an outside of the monitoring area in the light projected by the light projection part. | 10-02-2014 |
Tadao Nishiguchi, Nagoya-Shi JP
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20100231354 | CONTROL SYSTEM AND METHOD, AND COMMUNICATION DEVICE AND METHOD - A control system has a control device for performing a control of a predetermined process, and a communication device for communicating with the control device. The control device has a first transmission unit for transmitting a request signal requesting for transmission of a response signal to the communication device, a first reception unit for receiving the response signal transmitted through a predetermined procedure from the communication device in response to the request signal transmitted by the first transmission unit, an authentication unit for performing authentication of the communication device using identification information of the communication device contained in the response signal received by the first reception unit and identification information of the communication device registered in advance, and a process executing unit for executing the predetermined process when the authentication of the communication device by the authentication unit is successful. The communication device has a first storage unit for storing transmission scheduled time information indicating a time scheduled to transmit the response signal assigned to the communication device, a second reception unit for receiving the request signal transmitted from the first transmission unit, and a second transmission unit for transmitting the response signal corresponding to the request signal received by the second reception unit to the control device at a time different from times assigned to other communication devices based on the transmission scheduled time information stored in the first storage unit. | 09-16-2010 |
20120182122 | DETECTION DEVICE, DETECTION SYSTEM AND DETECTION METHOD OF RADIO WAVE TRANSMITTING/RECEIVING BODY - A detection device that detects existence of a radio wave transmitting/receiving body inside a specific space has a first antenna, a second antenna, a controller that controls a first detection signal and a second detection signal that the first antenna transmits to an inside of the specific space, and a disturbing signal that the second antenna transmits, a third antenna that receives a response signal transmitted to the first detection signal and the second detection signal, which have been received by the radio wave transmitting/receiving body, and a determination unit that determines an existence position of the radio wave transmitting/receiving body, based on the response signal received by the third antenna. | 07-19-2012 |
Takeshi Nishiguchi, Sakai-Shi JP
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20140026493 | METHOD AND DEVICE FOR MANUFACTURING SAW WIRE | 01-30-2014 |
Takeshi Nishiguchi, Kyoto JP
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20100061811 | BULK COMPONENT FEEDER - A bulk component feeder includes a conveying channel | 03-11-2010 |
Takuto Nishiguchi, Kita-Ku JP
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20130302538 | Azo Compound, Dye-Based Polarizing Film And Polarizing Plate - The present invention relates to an azo compound represented by the following formula (1), [wherein, A represents a phenyl group which may have a substituent, R | 11-14-2013 |
20130314786 | Azo Compound And Salt Thereof, And Dye-Based Polarizing Film And Polarizing Plate Containing The Same - The present invention relates to an azo compound represented by the following formula (1) [wherein, A represents a naphthyl group having a substituent, R | 11-28-2013 |
20140085721 | Dye-Based Polarizing Element And Polarizing Plate - To develop a polarizing element having a good, polarizing property, and also having a high durability without use of a raw material belonging to a specified, chemical substance such as dianisidine. | 03-27-2014 |
20140087201 | Dye-Based Polarizing Element And Polarizing Plate - To develop a polarizing element having a good polarizing property that is a pigment having an excellent blue dye without use of a raw material belonging to a specified chemical substance such as dianisidine. | 03-27-2014 |
20140126054 | Dye-Based Polarizing Element And Polarizing Plate - To provide a polarizing element having a good polarizing property, and having a property of no discoloration by a treatment solution or pH of an adhesive. | 05-08-2014 |
Taro Nishiguchi, Hyogo JP
Patent application number | Description | Published |
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20110165764 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A first silicon carbide substrate having a first back-side surface and a second silicon carbide substrate having a second back-side surface are prepared. The first and second silicon carbide substrates are placed so as to expose each of the first and second back-side surfaces in one direction. A connecting portion is formed to connect the first and second back-side surfaces to each other. The step of forming the connecting portion includes a step of forming a growth layer made of silicon carbide on each of the first and second back-side surfaces, using a sublimation method of supplying a sublimate thereto in the one direction. | 07-07-2011 |
20110284873 | SILICON CARBIDE SUBSTRATE - A silicon carbide substrate has a substrate region and a support portion. The substrate region has a first single crystal substrate. The support portion is joined to a first backside surface of the first single crystal. The dislocation density of the first single crystal substrate is lower than the dislocation density of the support portion. At least one of the substrate region and the support portion has voids. | 11-24-2011 |
20110306181 | METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE - A method of manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate formed of silicon carbide and a SiC substrate formed of single crystal silicon carbide; fabricating a stacked substrate by stacking the base substrate and the SiC substrate to have their main surfaces in contact with each other; heating the stacked substrate to join the base substrate and the SiC substrate and thereby fabricating a joined substrate; and heating the joined substrate such that a temperature difference is formed between the base substrate and the SiC substrate, and thereby discharging voids formed at the step of fabricating the joined substrate at an interface between the base substrate and the SiC substrate to the outside. | 12-15-2011 |
20120003812 | METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE - A plurality of silicon carbide substrates and a support portion are heated. A temperature of a first radiation plane facing the plurality of silicon carbide substrates in a first space extending from the plurality of silicon carbide substrates in a direction perpendicular to one plane and away from the support portion is set to a first temperature. A temperature of a second radiation plane facing the support portion in a second space extending from the support portion in a direction perpendicular to one plane and away from the plurality of silicon carbide substrates is set to a second temperature higher than the first temperature. A temperature of a third radiation plane facing the plurality of silicon carbide substrates in a third space extending from a gap among the plurality of silicon carbide substrates along one plane is set to a third temperature lower than the second temperature. | 01-05-2012 |
20120003823 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. The first silicon carbide substrate has a first front-side surface and a first side surface. The second silicon carbide substrate has a second front-side surface and a second side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces is formed between the first side surface and the second side surface. By introducing melted silicon from the opening into the gap, a silicon connecting portion is formed to connect the first and second side surfaces so as to close the opening. By carbonizing the silicon connecting portion, a silicon carbide connecting portion is formed. | 01-05-2012 |
20120006255 | METHOD OF MANUFACTURING SINGLE CRYSTAL - A seed crystal having a frontside surface and a backside surface is prepared. Surface roughness of the backside surface of the seed crystal is increased. A coating film including carbon is formed on the backside surface of the seed crystal. The coating film and a pedestal are brought into contact with each other with an adhesive interposed therebetween. The adhesive is cured to fix the seed crystal to the pedestal. A single crystal is grown on the seed crystal. Before the growth is performed, a carbon film is formed by carbonizing the coating film. | 01-12-2012 |
20120009761 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other. | 01-12-2012 |
20120012862 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; and connecting the base substrate and SiC substrate to each other by forming an intermediate layer, which is made of carbon that is a conductor, between the base substrate and the SiC substrate. | 01-19-2012 |
20120015499 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. Between the first and second silicon carbide substrates, a gap having an opening exists. A closing layer for the gap is formed over the opening. The closing layer at least includes a silicon layer. In order to form a cover made of silicon carbide and closing the gap over the opening, the silicon layer is carbonized. By depositing sublimates from the first and second side surfaces of the first and second silicon carbide substrates onto the cover, a connecting portion is formed to close the opening. The cover is removed. | 01-19-2012 |
20120017826 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A supporting portion ( | 01-26-2012 |
20120025208 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; forming a Si film made of silicon on a main surface of the base substrate; fabricating a stacked substrate by placing the SiC substrate on and in contact with the Si film; and connecting the base substrate and the SiC substrate to each other by heating the stacked substrate to convert, into silicon carbide, at least a region making contact with the base substrate and a region making contact with the SiC substrate in the Si film. | 02-02-2012 |
20120032191 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate ( | 02-09-2012 |
20120061686 | SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE - A silicon carbide substrate allowing reduction in cost for manufacturing a semiconductor device including a silicon carbide substrate includes a base substrate composed of silicon carbide and an SiC layer composed of single crystal silicon carbide different from the base substrate and arranged on the base substrate in contact therewith. Thus, the silicon carbide substrate | 03-15-2012 |
20120061687 | SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE - A silicon carbide substrate, which allows for reduced resistivity in the thickness direction thereof while restraining stacking faults from being produced due to heat treatment, includes: a base layer made of silicon carbide; and a SiC layer made of single-crystal silicon carbide and disposed on one main surface of the base layer. The base layer has an impurity concentration greater than 2×10 | 03-15-2012 |
20120068195 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a plurality of SiC substrates each made of single-crystal silicon carbide; forming a base layer made of silicon carbide and holding the plurality of SiC substrates, which are arranged side by side when viewed in a planar view; and forming a filling portion filling a gap between the plurality of SiC substrates. | 03-22-2012 |
20120070605 | SILICON CARBIDE INGOT, SILICON CARBIDE SUBSTRATE, MANUFACTURING METHOD THEREOF, CRUCIBLE, AND SEMICONDUCTOR SUBSTRATE - An SiC ingot includes a bottom face having 4 sides; four side faces extending from the bottom face in a direction intersecting the direction of the bottom face; and a growth face connected with the side faces located at a side opposite to the bottom face. At least one of the bottom face, the side faces, and the growth face is the {0001} plane, {1-100} plane, {11-20} plane, or a plane having an inclination within 10° relative to these planes. | 03-22-2012 |
20120107218 | PRODUCTION METHOD OF SILICON CARBIDE CRYSTAL, SILICON CARBIDE CRYSTAL, AND PRODUCTION DEVICE OF SILICON CARBIDE CRYSTAL - A production method of a SiC crystal includes the following steps. That is, there is prepared a production device including a crucible and a heat insulator covering an outer circumference of the crucible. A source material is placed in the crucible. A seed crystal is placed opposite to the source material in the crucible. The silicon carbide crystal is grown by heating the source material in the crucible for sublimation thereof and depositing resultant source material gas on the seed crystal. The step of preparing the production device includes the step of providing a heat dissipation portion, which is constituted by a space, between the heat insulator and an outer surface of the crucible at a side of the seed crystal. | 05-03-2012 |
20120112209 | SILICON CARBIDE SUBSTRATE FABRICATION METHOD, SEMICONDUCTOR DEVICE FABRICATION METHOD, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method of fabricating a silicon carbide substrate that can reduce the fabrication cost of a semiconductor device employing the silicon carbide substrate includes the steps of: preparing a SiC substrate made of single crystal silicon carbide; arranging a base substrate in a vessel so as to face one main face of the SiC substrate; forming a base layer made of silicon carbide so as to contact one main face of the SiC substrate by heating a base substrate to a temperature range greater than or equal to a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming a base layer, a silicon generation source made of a substance including silicon is arranged in the vessel, in addition to the SiC substrate and the base substrate. | 05-10-2012 |
Taro Nishiguchi, Itami-Shi JP
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20110175107 | SILICON CARBIDE SUBSTRATE - A base portion is made of silicon carbide and has a main surface. At least one silicon carbide layer is provided on the main surface of the base portion in a manner exposing a region of the main surface along an outer edge of the main surface. At least one protection layer is provided on this region of the main surface of the base portion along the outer edge of the main surface. Thus, a silicon carbide substrate can be polished with high in-plane uniformity. | 07-21-2011 |
20110175108 | LIGHT-EMITTING DEVICE - A silicon carbide substrate has a first layer facing a semiconductor layer and a second layer stacked on the first layer. Dislocation density of the second layer is higher than dislocation density of the first layer. Thus, quantum efficiency and power efficiency of a light-emitting device can both be high. | 07-21-2011 |
20110198027 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A base portion and first and second silicon carbide substrates are disposed in a processing chamber such that a first side surface of a first silicon carbide substrate and a side surface of a second silicon carbide substrate face each other. The processing chamber has an inner surface at least a portion of which is covered with an absorbing portion including Ta atoms and C atoms. In order to connect the first and second side surfaces to each other, a temperature in the processing chamber is increased to reach or exceed a temperature at which silicon carbide can sublime. In the step of increasing the temperature, at least a portion of the absorbing portion is carbonized. | 08-18-2011 |
20110217224 | SILICON CARBIDE CRYSTAL, METHOD OF MANUFACTURING THE SAME, APPARATUS FOR MANUFACTURING THE SAME, AND CRUCIBLE - A method of manufacturing SiC crystal includes the following steps. A manufacturing apparatus including a crucible having a main body portion and a heat insulating material covering the main body portion is prepared. In the main body portion, seed crystal is arranged opposed to a source material. The source material is heated to sublime and a source gas is precipitated on the seed crystal, to thereby grow SiC crystal. The step of preparing the manufacturing apparatus includes the step of arranging a heat radiation portion higher in thermal conductivity than the heat insulating material on a side of an outer surface of the main body portion on a side of seed crystal and covering the entire outer surface of the main body portion on the side of the seed crystal with the heat radiation portion or with the heat radiation portion and the heat insulating material. | 09-08-2011 |
20110226182 | CRUCIBLE, CRYSTAL PRODUCTION DEVICE, AND HOLDER - A crucible includes a body portion having a hollow inner portion, and a projection portion connected to an inner circumferential surface of the body portion and projecting toward the inner portion. The projection portion has a side surface provided with a thread. A holder includes a base and a protrusion connected to an end portion of the base. The protrusion has an inner circumferential side provided with a thread. A crystal production device includes the crucible and the holder. The holder is attached to the projection portion of the crucible by means of the threads formed in the holder and the crucible. | 09-22-2011 |
20110229719 | MANUFACTURING METHOD FOR CRYSTAL, MANUFACTURING APPARATUS FOR CRYSTAL, AND STACKED FILM - A manufacturing method for a crystal, a manufacturing apparatus for a crystal, and a stacked film capable of growing a high-quality crystal are provided. The manufacturing method for a crystal includes the steps of: preparing a seed crystal having a frontside surface and a backside surface opposite to the frontside surface; forming at least one film selected from the group consisting of a hard carbon film, a diamond film, a tantalum film, and a tantalum carbide film on the backside surface of the seed crystal; and growing the crystal on the frontside surface of the seed crystal. | 09-22-2011 |
20110233561 | SEMICONDUCTOR SUBSTRATE - A supporting portion is made of silicon carbide. At least one layer has first and second surfaces. The first surface is supported by the supporting portion. The at least one layer has first and second regions. The first region is made of silicon carbide of a single-crystal structure. The second region is made of graphite. The second surface has a surface formed by the first region. The first surface has a surface formed by the first region, and a surface formed by the second region. In this way, a semiconductor substrate can be provided which has a region made of silicon carbide having a single-crystal structure and a supporting portion made of silicon carbide and allows for reduced electric resistance of an interface therebetween. | 09-29-2011 |
20110254017 | MANUFACTURING METHOD FOR CRYSTAL, CRYSTAL, AND SEMICONDUCTOR DEVICE - A manufacturing method for a crystal, a crystal, and a semiconductor device capable of growing a high-quality crystal are provided. The manufacturing method for a crystal of the present invention includes the steps of: preparing a seed crystal having a frontside surface and a backside surface opposite to the frontside surface; fixing the backside surface of the seed crystal to a pedestal; and growing the crystal on the frontside surface of the seed crystal. In the step of fixing, the seed crystal is fixed to the pedestal by coating the backside surface of the seed crystal with a Si layer or disposing a Si layer on the backside surface of the seed crystal, and carbonizing the Si layer. | 10-20-2011 |
20110262680 | SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A sublimation preventing layer is formed to cover a first region of a main surface of a material substrate. First and second single-crystal layers are arranged on the material substrate such that a gap between first and second side surfaces is located over the sublimation preventing layer. The material substrate and the first and second single-crystal layers are heated to sublimate silicon carbide from a second region of the main surface and recrystallize the sublimated silicon carbide on the first backside surface of the first single-crystal layer and the second backside surface of the second single-crystal layer, thereby forming a base substrate connected to each of the first and second backside surfaces. This can prevent formation of voids in a silicon carbide substrate having such a plurality of single-crystal layers. | 10-27-2011 |
20110262681 | SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A carbon layer is formed on a first region of a main surface of a material substrate. On the material substrate, first and second single-crystal layers are arranged such that each of a first backside surface of the first single-crystal layer and a second backside surface of the second single-crystal layer has a portion facing a second region of the main surface of the material substrate and such that a gap between a first side surface of the first single-crystal layer and a second side surface of the second single-crystal layer is located over the carbon layer. By heating the material substrate and the first and second single-crystal layers, a base substrate connected to each of the first and second backside surfaces is formed. In this way, voids can be prevented from being formed in the silicon carbide substrate having such a plurality of single-crystal layers. | 10-27-2011 |
20110278593 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate, by heating the base substrate in the crucible to fall within a range of temperature higher than a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming the base layer, a gas containing silicon is introduced into the crucible. | 11-17-2011 |
20110278594 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate by heating the base substrate in the crucible to fall within a range of temperature equal to or higher than a sublimation temperature of silicon carbide constituting the base substrate. The crucible has an inner wall at least a portion of which is provided with a coating layer made of silicon carbide. | 11-17-2011 |
20110278595 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; fabricating a stacked substrate by placing said SiC substrate on and in contact with a main surface of said base substrate; and connecting said base substrate and said SiC substrate to each other by heating said stacked substrate in a container to fall within a range of temperature equal to or greater than a sublimation temperature of silicon carbide constituting said base substrate. In the step of connecting said base substrate and said SiC substrate, a silicon carbide body made of silicon carbide and different from said base substrate and said SiC substrate is disposed in said container. | 11-17-2011 |
20110300354 | COMBINED SUBSTRATE AND METHOD FOR MANUFACTURING SAME - A base portion is prepared which has a supporting layer made of a material different from silicon carbide, and a silicon carbide layer formed on the supporting layer. Each of first and second silicon carbide single-crystals is connected onto the silicon carbide layer of the base portion. In this way, a combined substrate having such a plurality of silicon carbide single-crystals can be provided at low cost. | 12-08-2011 |
20120056201 | INSULATED GATE BIPOLAR TRANSISTOR - An IGBT, which is a vertical type IGBT allowing for reduced on-resistance while restraining defects from being produced, includes: a silicon carbide substrate, a drift layer, a well region, an n | 03-08-2012 |
20120056202 | SEMICONDUCTOR DEVICE - A MOSFET, which is a semiconductor device allowing for reduced on-resistance while restraining stacking faults from being produced due to heat treatment in a device manufacturing process, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate; a source contact electrode disposed on the active layer; and a drain electrode formed on the other main surface of the silicon carbide substrate. The silicon carbide substrate includes: a base layer made of silicon carbide; and a SiC layer made of single-crystal silicon carbide and disposed on the base layer. Further, the base layer has an impurity concentration greater than 2×10 | 03-08-2012 |
20120056203 | SEMICONDUCTOR DEVICE - A JFET, which is a semiconductor device allowing for reduced manufacturing cost, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate; a source electrode disposed on the active layer; and a drain electrode formed on the active layer and separated from the source electrode. The silicon carbide substrate includes: a base layer made of single-crystal silicon carbide, and a SiC layer made of single-crystal silicon carbide and disposed on the base layer. The SiC layer has a defect density smaller than that of the base layer. | 03-08-2012 |
20120126251 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate achieves reduced manufacturing cost. The method includes the steps of: preparing a base substrate and a SiC substrate; fabricating a stacked substrate by stacking the base substrate and the SiC substrate; fabricating a connected substrate by heating the stacked substrate; transferring a void, formed at a connection interface, in a thickness direction of the connected substrate by heating the connected substrate to cause the base substrate to have a temperature higher than that of the SiC substrate; and removing the void by removing a region including a main surface of the base substrate opposite to the SiC substrate. | 05-24-2012 |
20120156122 | METHOD OF PRODUCING SILICON CARBIDE CRYSTAL, AND SILICON CARBIDE CRYSTAL - In a method of producing a SiC crystal by sublimation, the atmosphere gas for growing a SiC crystal contains He. The atmosphere gas may further contain N. The atmosphere gas may further contain at least one type of gas selected from the group consisting of Ne, Ar, Kr, Xe, and Rn. In the atmosphere gas, the partial pressure of He is preferably greater than or equal to 40%. | 06-21-2012 |
20120161157 | SILICON CARBIDE SUBSTRATE - A silicon carbide substrate, which achieves restrained warpage even when a different-type material layer made of a material other than silicon carbide, includes: a base layer made of silicon carbide; and a plurality of SiC layers arranged side by side on the base layer when viewed in a planar view and each made of single-crystal silicon carbide. A gap is formed between end surfaces of adjacent SiC layers. | 06-28-2012 |
20120184113 | METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A step of preparing a stack is performed to position each single-crystal substrate in a first single-crystal substrate group and a first base substrate face to face with each other, position each single-crystal substrate in a second single-crystal substrate group and a second base substrate face to face with each other, and stack the first single-crystal substrate group, the first base substrate, an insertion portion, the second single-crystal substrate group, and the second base substrate in one direction in this order. Next, the stack is heated so as to allow a temperature of the stack to reach a temperature at which silicon carbide can sublime and so as to form a temperature gradient in the stack with the temperature thereof getting increased in the above-described direction. In this way, silicon carbide substrates can be manufactured efficiently. | 07-19-2012 |
20120244307 | SILICON CARBIDE SUBSTRATE - A silicon carbide substrate includes: a base substrate having a diameter of 70 mm or greater; and a plurality of SiC substrates made of single-crystal silicon carbide and arranged side by side on the base substrate when viewed in a planar view. In other words, the plurality of SiC substrates are arranged side by side on and along the main surface of the base substrate. Further, each of the SiC substrates has a main surface opposite to the base substrate and having an off angle of 20° or smaller relative to a {0001} plane. | 09-27-2012 |
20120275984 | METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SUBSTRATE - Each of first and second material substrates made of single crystal silicon carbide has first and second back surfaces, first and second side surfaces, and first and second front surfaces. The first and second back surfaces are connected to a supporting portion. The first and second side surfaces face each other with a gap interposed therebetween, the gap having an opening between the first and second front surfaces. A closing portion for closing the gap over the opening is formed. A connecting portion for closing the opening is formed by depositing a sublimate from the first and second side surfaces onto the closing portion. The closing portion is removed. A silicon carbide single crystal is grown on the first and second front surfaces. | 11-01-2012 |
20120294790 | SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHODS FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE INGOT - A method of manufacturing a silicon carbide ingot having highly uniform characteristics includes a preparation step of preparing a base substrate made of single crystal silicon carbide and having an off angle of 0.1° or more and 10° or less in an off angle direction which is either a <11-20> direction or a <1-100> direction relative to a (0001) plane, and a film formation step of growing a silicon carbide layer on a surface of the base substrate. In the film formation step, a region having a (0001) facet | 11-22-2012 |
20120308758 | SILICON CARBIDE CRYSTAL INGOT, SILICON CARBIDE CRYSTAL WAFER, AND METHOD FOR FABRICATING SILICON CARBIDE CRYSTAL INGOT - A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1×10 | 12-06-2012 |
20120315427 | SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A single crystal silicon carbide substrate has a 4H-polytype crystal structure, has with nitrogen atoms doped as a conduction impurity with an atomic concentration of more than 1×10 | 12-13-2012 |
20130009171 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate is made of silicon carbide having a 4H type single-crystal structure. Further, the substrate has a physical property in which a ratio of a peak strength in a wavelength of around 500 nm to a peak strength in a wavelength of around 390 nm is 0.1 or smaller in photoluminescence measurement. In this way, the semiconductor device is obtained to have a low on-resistance. | 01-10-2013 |
20130061801 | METHOD FOR MANUFACTURING SILICON CARBIDE CRYSTAL - Provided is a method for manufacturing a silicon carbide crystal, including the steps of: placing a seed substrate and a source material for the silicon carbide crystal within a growth container; and growing the silicon carbide crystal with a diameter of more than 4 inches on a surface of the seed substrate by a sublimation method, in the step of growing, a pressure within the growth container being changed from a predetermined pressure, at a predetermined change rate. | 03-14-2013 |
20130071643 | SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A silicon carbide substrate capable of stably forming a device of excellent performance, and a method of manufacturing the same are provided. A silicon carbide substrate is made of a single crystal of silicon carbide, and has a width of not less than 100 mm, a micropipe density of not more than 7 cm | 03-21-2013 |
20130095285 | SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHOD OF MANUFACTURING THE SAME - A silicon carbide substrate and a silicon carbide ingot excellent in uniformity in characteristics, and a method of manufacturing the same are obtained. A method of manufacturing a silicon carbide ingot includes the steps of preparing a base substrate having an off angle with respect to a (0001) plane not greater than 10° and composed of single crystal silicon carbide and growing a silicon carbide layer on a surface of the base substrate. In the step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of the silicon carbide layer is set to 20° C./cm or more. | 04-18-2013 |
20130095294 | SILICON CARBIDE INGOT AND SILICON CARBIDE SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME - A silicon carbide ingot excellent in uniformity in characteristics and a silicon carbide substrate obtained by slicing the silicon carbide ingot, and a method of manufacturing the same are obtained. A method of manufacturing a silicon carbide ingot includes the steps of preparing a base substrate having an off angle with respect to a (0001) plane not greater than 1° and composed of single crystal silicon carbide and growing a silicon carbide layer on a surface of the base substrate. In the step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of the silicon carbide layer is set to 10° C./cm or less. | 04-18-2013 |
20130161646 | SEMICONDUCTOR SUBSTRATE - A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in any square area, density of dislocations of which Burgers vector is parallel to <0001> direction is at most 1×10 | 06-27-2013 |
20130161647 | INGOT, SUBSTRATE, AND SUBSTRATE GROUP - An ingot, a substrate, and a substrate group are obtained each of which is made of silicon carbide and is capable of suppressing variation of characteristics of semiconductor devices. The ingot is made of single-crystal silicon carbide, and has p type impurity. The ingot has a thickness of 10 mm or greater in a growth direction thereof. Further, the ingot has an average carrier density of 1×10 | 06-27-2013 |
20140030874 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a seed substrate made of silicon carbide; etching a main surface of the seed substrate prepared; obtaining an ingot by growing a silicon carbide single crystal film on a crystal growth surface formed by etching the main surface of the seed substrate; | 01-30-2014 |
20150060886 | SEMICONDUCTOR SUBSTRATE - A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in any square area, density of dislocations of which Burgers vector is parallel to <0001> direction is at most 1×10 | 03-05-2015 |
20150072100 | SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE - A silicon carbide epitaxial substrate having a main surface (second main surface) includes: a base substrate; and a silicon carbide epitaxial layer formed on the base substrate and including the main surface (second main surface), the second main surface having a surface roughness of 0.6 nm or less, a ratio of standard deviation of a nitrogen concentration in the silicon carbide epitaxial layer at a surface layer including the main surface (second main surface) within a plane of the silicon carbide epitaxial substrate to an average value of the nitrogen concentration in the silicon carbide epitaxial layer at the surface layer within the plane of the silicon carbide epitaxial substrate being 15% or less. | 03-12-2015 |
Tetsuya Nishiguchi, Tagata-Gun JP
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20130050387 | DEFLECTION SCANNER - The present invention provides an optical scanning apparatus which includes first and second light sources, a deflection scanning device, and first and second scanning optical systems that guides the first and second laser beams deflected for scanning by the deflection scanning device, wherein the first and second scanning optical systems include scanning lenses, and a polarization beam splitter arranged in a downstream side of an optical path of the scanning lens, wherein the first scanning optical system includes a half-wave plate arranged in the downstream side of the optical path of the scanning lens and in an upstream side of an optical path of the polarization beam splitter, wherein the first laser beam and the second laser beam before being incident on the first and second scanning optical systems have different phases by 180 degrees from each other. | 02-28-2013 |
20140168737 | OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS INCLUDING THE SAME - An optical scanning apparatus includes first and second light source units including respective light sources; a rotating polygon mirror that performs deflection scanning of laser beams emitted from the light sources included in the first and second light source units; and a positioning member including a first abutting portion on which the first light source unit abuts and a second abutting portion on which the second light source unit abuts, the positioning member positioning the first and second light source units. The first and second light source units are positioned by the positioning member and arranged next to each other in a rotation axis direction of the rotating polygon mirror. The positioning member is a single member disposed between the first and second light source units in the rotation axis direction. | 06-19-2014 |
Tomoaki Nishiguchi, Hitachinaka JP
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20120155847 | IMAGE SENSING DEVICE, IMAGE SENSING DEVICE CONTROL METHOD, AND PROGRAM FOR THE CONTROL METHOD - For preventing frequent use of auto-focus control and also for acquiring stable in-focus positions for target-objects, this invention comprises system control section | 06-21-2012 |
Tomoaki Nishiguchi, Mito JP
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20110292525 | IMAGING DEVICE - In order to obtain stable lens positions to have an object imaged in focus when the temperature of lenses changes, an imaging device of the present invention comprises a system control section | 12-01-2011 |
20120162496 | IMAGING DEVICE, IMAGE PROCESSING DEVICE, IMAGE PROCESSING METHOD AND IMAGE PROCESSING SOFTWARE - For improving picture quality in auto-focus control, image processing device | 06-28-2012 |
20130271611 | IMAGING DEVICE WITH THE AUTOFOCUS - An imaging device performs optimum focus correction at low cost with an autofocus device that moves a lens for focusing an image. The imaging device includes a camera signal processing part having a contrast signal generation part that extracts a high frequency component from a video signal and generates a contrast signal of the video signal based on the extracted high frequency component. The imaging device also has a controller that performs focus control based on the contrast signal. The controller performs an ON/OFF control of an infrared rays cut filter and includes a recording part to hold a set value of an ON/OFF state of the infrared rays cut filter. The camera signal processing part includes a signal conversion processing part to change a ratio of RGB of the video signal to be sent to the contrast signal generation part based on the set value. | 10-17-2013 |
Tomoaki Nishiguchi, Yokohama JP
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20090109299 | ZOOM CAMERA WITH MANUAL FOCUS FUNCTION - A zoom camera having enhanced focusing stability during high magnification zooming under environments of high temperatures or low temperatures. When the zoom camera performs zoom-in operations in an environment of high or low temperatures, aperture control is added as the zoom magnification becomes higher and the temperature becomes higher or lower whereby the depth of field is made deeper to assure the presence of a range with good focusability. | 04-30-2009 |
20090201410 | FOCUS CONTROL APPARATUS AND METHOD - A focus control apparatus and method capable of shortening a focus adjustment time in focus control. The method includes extracting a first high frequency component depending upon a first cutoff frequency and a second high frequency component depending upon a second cutoff frequency higher than the first cutoff frequency from a video signal, generating first and second contrast signals of the video signal respectively based on the first and second high frequency components, using a quotient obtained by dividing a value of the first contrast signal by that of the second contrast signal as a parameter, exercising focus control based on the parameter, and setting the first and second cutoff frequencies so as to cause a value of the parameter to assume a peak when a focus lens in an image pickup apparatus is located in a position at a predetermined distance from an in-focus position. | 08-13-2009 |
20120081597 | FOCUS CONTROL APPARATUS USEFUL FOR IMAGE PICK UP APPARATUSES EQUIPPED WITH AN AUTO FOCUS FUNCTION AND METHOD THEREFOR - A focus control apparatus and method capable of shortening a focus adjustment time in focus control. The method includes extracting a first high frequency component depending upon a first cutoff frequency and a second high frequency component depending upon a second cutoff frequency higher than the first cutoff frequency from a video signal, generating first and second contrast signals of the video signal respectively based on the first and second high frequency components, using a quotient obtained by dividing a value of the first contrast signal by that of the second contrast signal as a parameter, exercising focus control based on the parameter, and setting the first and second cutoff frequencies so as to cause a value of the parameter to assume a peak when a focus lens in an image pickup apparatus is located in a position at a predetermined distance from an in-focus position. | 04-05-2012 |
Tomohiro Nishiguchi, Nishinomiya-Shi JP
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20130194627 | MANAGEMENT SYSTEM, MANAGEMENT SERVER, AND RECORDING MEDIUM - A management system for managing a management target device includes: a position detection unit configured to detect a position of a user of the management target device; a management server configured to manage Air Tag information relating to the user; and a mobile terminal. The management server includes: a positional information acquisition unit configured to acquire positional information for the position of the user based on a result of the detection by the position detection unit; a generation unit configured to generate the Air Tag information including device-relating information and the positional information of the user; and a transmission unit configured to transmit the Air Tag information to the mobile terminal. The mobile terminal displays an Air Tag image visualizing the device-relating information of the user by superposing the Air Tag image over a portion representing the user within a shot image of scenery around the mobile terminal. | 08-01-2013 |
Toshifumi Nishiguchi, Kanagawa-Ken JP
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20130277734 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor device includes a first semiconductor region; a second semiconductor region having a side face and a lower face, and the faces surrounded by the first semiconductor region; a third semiconductor region provided between the second semiconductor region and the first semiconductor region; a fourth semiconductor region being in contact with an outer side face of the first semiconductor region; a plurality of first electrodes being in contact with the second semiconductor region, the third semiconductor region, and the first semiconductor region via an insulating film; a plurality of pillar areas extending from the third semiconductor region toward the fourth semiconductor region, each of the plurality of pillar areas being provided between adjacent ones of the plurality of first electrodes. An impurity density of each of the pillar areas and an impurity density of the third semiconductor region is substantially the same. | 10-24-2013 |
Toshihiro Nishiguchi, Shizuoka JP
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20080318501 | Vibrating Device - The object of the present invention is to enable efficient vibration processing by applying a sufficient displacement amount and response speed to an object to be vibrated. In grinding of an outer surface of a workpiece W, first and second supporting members are provided for supporting two opposed points of the workpiece, and first and second vibrators comprising a plurality of piezoelectric elements are arranged in blind holes formed in the center of the first and second supporting members. The first and second vibrators are activated with sine wave signals which differ in phase by 180 degrees so as to cause the first and second supporting members to expand and shrink in the back-and-forth direction. The displacement amount is amplified and the processing is performed. Also, the second supporting member can move back and forth toward the first supporting member. | 12-25-2008 |
Toshiji Nishiguchi, Kawasaki-Shi JP
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20090095619 | GAS TREATING APPARATUS - A gas treating method including: generating non-equilibrium plasma in a gas flow space; and treating a gas to be treated containing a substance to be treated using the non-equilibrium plasma, the non-equilibrium plasma being generated by using at least two wire-like high-voltage applying electrodes that are arranged away from each other, in between at least two flat-plate ground electrodes that are arranged face to face in parallel to each other to define the gas flow space, in a direction perpendicular to opposite sides of the flat-plate ground electrodes. | 04-16-2009 |
20100076106 | OPTICAL MATERIAL AND OPTICAL ELEMENT - Provided is an optical material which has a high transmittance, a high refractive index, a low Abbe constant, a high secondary dispersion property, and a low water absorption rate. The optical material includes a polymer of a mixture which contains: a sulfur-containing compound represented by the following general formula (1): | 03-25-2010 |
Toshiya Nishiguchi, Himeji-Shi JP
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20100121007 | CATALYST FOR PRODUCING OF ACRYLIC ACID, METHOD FOR PRODUCING ACRYLIC ACID USING THE CATLYST AND METHOD FOR PRODUCING WATER-ABSORBENT RESIN USING THE ACRYLIC ACID - The invention provides a catalyst for producing acrylic acid at high yield for a long time, in a method for producing acrylic acid by catalytic gas phase oxidation of propane and/or acrolein in the presence of molecular oxygen or a molecular oxygen-containing gas. This catalyst comprises a complex oxide containing molybdenum, vanadium and X component (here the X component is at least one element selected from antimony, niobium and tin) as the essential components, and is characterized in that its main peak as measured by X-ray diffractiometry using Kα ray of Cu, d=4.00±0.1 angstrom, and in that the particle size of the X component in the catalyst does not exceed 20 μm. | 05-13-2010 |
20130253223 | CATALYST FOR PRODUCING UNSATURATED CARBOXYLIC ACID AND A PROCESS FOR PRODUCING UNSATURATED CARBOXYLIC ACID USING THE CATALYST - Provided is a catalyst for producing unsaturated carboxylic acid, which excels in mechanical strength and attrition loss and is capable of producing the object product at a high yield. This catalyst is formed of a catalytically active component comprising molybdenum and vanadium as the essential ingredients and inorganic fibers, which are supported on an inert carrier, said catalyst being characterized in that said inorganic fibers comprise at least an inorganic fiber having an average diameter less than 1.0 μm and another inorganic fiber having an average diameter ranging from 1.5 to 7 μm. | 09-26-2013 |
Yasuhiro Nishiguchi, Aichi-Ken JP
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20110031372 | FUEL CELL SYSTEM - It is an object of the invention to provide a fuel cell system which can reduce vibrations and noises generated upon driving of devices which are the cause of vibration. | 02-10-2011 |
Yohei Nishiguchi, Kawasaki-Shi JP
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20090010374 | REACTIVITY CONTROL ROD FOR CORE, CORE OF NUCLEAR REACTOR, NUCLEAR REACTOR AND NUCLEAR POWER PLANT - In a nuclear reactor in which a primary coolant is contained, the primary coolant moves upwardly from the core by an operation thereof. An annular steam generator is arranged in an upper side of the core into which the upwardly moving primary coolant flows and transfers heat in the primary coolant into water therein to generate a steam. A passage structure defines a coolant passage for the primary coolant to an outside of the core. The heat-transferred primary coolant in the annular steam generator flows downwardly in the coolant passage so as to flow into the core, thereby moving upwardly. A reactor vessel is arranged to surround the coolant passage so as to contain the core, the annular steam generator and the passage means therein. | 01-08-2009 |
20100322369 | LIQUID COOLED NUCLEAR REACTOR WITH ANNULAR STEAM GENERATOR - A nuclear reactor in which a primary coolant is contained, the primary coolant moves upwardly from the core by an operation thereof. An annular steam generator is arranged in an upper side of the core into which the upwardly moving primary coolant flows and transfers heat in the primary coolant into water therein to generate a steam. A passage structure defines a coolant passage for the primary coolant to an outside of the core. The heat-transferred primary coolant in the annular steam generator flows downwardly in the coolant passage so as to flow into the core, thereby moving upwardly. A reactor vessel is arranged to surround the coolant passage so as to contain the core, the annular steam generator and the passage means therein. | 12-23-2010 |
20110116591 | LIQUID COOLED NUCLEAR REACTOR WITH ANNULAR STEAM GENERATOR - A nuclear reactor in which a primary coolant is contained, the primary coolant moves upwardly from the core by an operation thereof. An annular steam generator is arranged in an upper side of the core into which the upwardly moving primary coolant flows and transfers heat in the primary coolant into water therein to generate a steam. A passage structure defines a coolant passage for the primary coolant to an outside of the core. The heat-transferred primary coolant in the annular steam generator flows downwardly in the coolant passage so as to flow into the core, thereby moving upwardly. A reactor vessel is arranged to surround the coolant passage so as to contain the core, the annular steam generator and the passage means therein. | 05-19-2011 |
Yoshio Nishiguchi, Saitama JP
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20110172472 | Process for Producing 1,3,3,3-Tetrafluoropropene - According to the first characteristic of the present invention, there is provided a production process for 1,3,3,3-tetrafluoropropene including: the first step of reacting 1,1,1,3,3-pentachloropropane with hydrogen fluoride thereby obtaining 1-chloro-3,3,3-trifluoropropene; and the second step of reacting 1-chloro-3,3,3-trifluoropropene obtained in the first step with hydrogen fluoride in a gaseous phase in the presence of a fluorination catalyst. According to the second characteristic of the present invention, there is provided a dehydration process including bringing 1,3,3,3-tetrafluoropropene containing at least water into contact with zeolite. | 07-14-2011 |
Yoshio Nishiguchi, Iruma-Gun JP
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20120065435 | Dehydration Process of Hydrofluorocarbon or Hydrochlorofluorocarbon and Production Method of 1,3,3,3-Tetrafluoropropene Using the Dehydration Process - A process for dehydrating a hydrofluorocarbon or hydrochlorofluorocarbon, which can be done by simple equipment, and a continuous process of producing 1,3,3,3-tetrafluoropropene using the dehydration process. The dehydration process includes cooling the hydrofluorocarbon or hydrochlorofluorocarbon in gaseous form containing water with a heat exchanger, thereby condensing and liquefying the hydrofluorocarbon or hydrochlorofluorocarbon while freezing and solidifying the water. The 1,3,3,3-tetrafluoropropene production method includes a first step for fluorinating 1-chloro-3,3,3-trifluoropropene with hydrogen fluoride to obtain a mixture of 1,3,3,3-tetrafluoropropene, unreacted 1-chloro-3,3,3-trifluoropropene, hydrogen fluoride, hydrogen chloride and by-products, or dehydrofluorinating 1,1,1,3,3-pentafluoropropane to obtain a mixture of 1,3,3,3-tetrafluoropropene, unreacted 1,1,1,3,3-pentafluoropropane and by-products, a second step for removing acidic components, a third step for dehydrating the 1,3,3,3-tetrafluoropropene by the above dehydration process, and a fourth step for purifying the 1,3,3,3-tetrafluoropropene by distillation. | 03-15-2012 |
20120123172 | Production Method Of Trans-1,3,3,3-Tetrafluoropropene - Production of trans-1,3,3,3-tetrafluoropropene by reacting 1-chloro-3,3,3-trifluoropropene with hydrogen fluoride to obtain a reaction product A containing formed trans-1,3,3,3-tetrafluoropropene, unreacted 1-chloro-3,3,3-trifloropropene and hydrogen fluoride, and by-product cis-1,3,3,3-tetrafluoropropene, 1,1,1,3,3-pentafluoropropane and hydrogen chloride; distilling reaction product A to recover a distillation bottom product containing 1-chloro-3,3,3-trifloropropene and hydrogen fluoride and supplying recovered distillation bottom product to the reacting step; recovering hydrogen fluoride from a residue B remaining after recovery of the distillation bottom product and supplying recovered hydrogen fluoride to the reacting step; contacting a residue C remaining after recovery of hydrogen fluoride with water or aqueous sodium hydroxide solution to separate hydrogen chloride; dehydrating a residue D remaining after separation of hydrogen chloride; and distilling a residue E remaining after the dehydration to obtain trans-1,3,3,3-tetrafluoropropene. The method reuses unreacted reactants and produces the target compound efficiently. | 05-17-2012 |
20150038749 | Process for Producing 2-Chloro-1,3,3,3-Tetrafluoropropene - Disclosed is a process for producing 2-chloro-1,3,3,3-tetrafluoropropene (1224), including a first step of separating 2,3-dichloro-1,1,1,3-tetrafluoropropane 234da) into erythro form and threo form, and a second step of bringing the separated erythro form or threo form in contact with a base to obtain 2-chloro-1,3,3,3-tetrafluoropropene (1224). The first step is a step of separating 234da by distillation to achieve a separation into a fraction containing mainly erythro form and a fraction containing mainly threo form. In the second step, 1224 cis form is obtained from the erythro form, and 1224 trans form is obtained from the threo form. By this process, it is possible to selectively and efficiently produce cis form or trans form of 2-chloro-1,3,3,3-tetrafluoropropene (1224). | 02-05-2015 |