| Patent application number | Description | Published |
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| 20080266749 | Scalable integrated circuit high density capacitors - The present invention provides several scalable integrated circuit high density capacitors and their layout techniques. The capacitors are scaled, for example, by varying the number of metal layers and/or the area of the metal layers used to from the capacitors. The capacitors use different metallization patterns to form the metal layers, and different via patterns to couple adjacent metal layers. In embodiments, optional shields are included as the top-most and/or bottom-most layers of the capacitors, and/or as side shields, to reduce unwanted parasitic capacitance. | 10-30-2008 |
| 20090283858 | Scalable Integrated Circuit High Density Capacitors - The present invention provides several scalable integrated circuit high density capacitors and their layout techniques. The capacitors are scaled, for example, by varying the number of metal layers and/or the area of the metal layers used to form the capacitors. The capacitors use different metallization patterns to form the metal layers, and different via patterns to couple adjacent metal layers. In embodiments, optional shields are included as the top-most and/or bottom-most layers of the capacitors, and/or as side shields, to reduce unwanted parasitic capacitance. | 11-19-2009 |
| 20090290283 | Scalable Integrated Circuit High Density Capacitors - The present invention provides several scalable integrated circuit high density capacitors and their layout techniques. The capacitors are scaled, for example, by varying the number of metal layers and/or the area of the metal layers used to from the capacitors. The capacitors use different metallization patterns to form the metal layers, and different via patterns to couple adjacent metal layers. In embodiments, optional shields are included as the top-most and/or bottom-most layers of the capacitors, and/or as side shields, to reduce unwanted parasitic capacitance. | 11-26-2009 |
| 20100219691 | SUPPLY VOLTAGE SELECTOR - An active diode includes a plurality of transistors that implement a built-in offset voltage. The built-in offset voltage size can be determined by sizing of at least one of the plurality of transistors to prevent supply current flow from one supply source into another supply source, thereby preventing current flow from a higher voltage source to a lower voltage source. | 09-02-2010 |
| 20120018843 | Scalable Integrated Circuit High Density Capacitors - The present invention provides several scalable integrated circuit high density capacitors and their layout techniques. The capacitors are scaled, for example, by varying the number of metal layers and/or the area of the metal layers used to from the capacitors. The capacitors use different metallization patterns to form the metal layers, and different via patterns to couple adjacent metal layers. In embodiments, optional shields are included as the top-most and/or bottom-most layers of the capacitors, and/or as side shields, to reduce unwanted parasitic capacitance. | 01-26-2012 |
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| 20080243793 | Contact Information Capture and Link Redirection - A contact information function associated with a web browser maintains a look-up table of recognizer functions, indexed by regular expressions that specify URLs. Upon a user entering or selecting a URL, the contact information function indexes the look-up table with the URL against the regular expressions. If one or more recognizers are found, the web content returned from the URL is processed by each of the recognizers, which recognize the format of information on that web site, and locate and extract contact information from the web content. The contact information may be saved, formatted, and output to other applications. Updated recognizers may be downloaded from a recognizer server. | 10-02-2008 |
| 20120109603 | QUANTITATIVE CALCULATION METHOD FOR OIL (GAS) SATURATION OF FRACTURED RESERVOIR - A quantitative calculation method for oil (gas) saturation of fractured reservoir during petroleum exploitation is provided. The method comprises: obtaining the fracture porosity and calculating resistivity index at different depth of fractured reservoir with known full diameter core data and imaging logging data; establishing the percolation network model of matrix and fracture combination with known pore structure feature; calibrating the numerical simulation results obtained from percolation network model based on the data of core experiment and sealed coring analysis results, then obtaining the relationship between the resistivity index (I) and water saturation (Sw) at different fracture porosity; calculating the oil (gas) saturation of fractured reservoir through selecting an interpolation function. The oil (gas) saturation calculated with said method is 0.67, however 0.49 with common method in some fractured reservoir. The accuracy is improved by more than 0.18 in the studied fractured reservoir. | 05-03-2012 |
| 20140032726 | METHOD AND APPARATUS FOR CONFIGURING SOCIAL NETWORKING SITE SHARING FUNCTIONS - A method and apparatus for configuring social networking site (SNS) sharing functions is disclosed. The method comprises downloading an interface configuration file and user information related to at least one SNS; processing and storing the interface configuration file and the user information; and transferring at least one content file to the at least one SNS based on the configuration file and user information. | 01-30-2014 |
| 20140143363 | METHOD AND APPARATUS FOR ENABLING INTEROPERABILITY OF TOUCH DEVICES - A method and apparatus for enabling interoperability of touch devices. The method comprises establishing communication between a master device and one or more slave devices, wherein the master device and the one or more slave devices each comprise a touch screen, and wherein the master device and slave device are each running an application; registering, with the master device, at least one capability for each slave device of the one or more slave devices, communicating a selection made on a slave device of the one or more slave devices to the master device; and implementing the selection from the slave device in the application running on the master device. | 05-22-2014 |
| 20140324242 | METHOD AND SYSTEM FOR ANALYZING USER LOADS IN COMBINATION WITH TIME INFORMATION - A method for analyzing a user load in conjunction with time information and a system thereof are provided. In the case that an enterprise operates in a non-full-time operational mode, operation periods of the enterprise are adjusted, electricity prices for respective adjusted operation periods are obtained, and the electricity prices are multiplied with electricity consumptions to obtain electricity charges of the enterprise. In the case that the enterprise operates in a full-time operational mode, electricity consumptions in respective hours of the enterprise are adjusted, the electricity consumptions are multiplied with electricity prices for the respective hours to obtain electricity charges of the respective hours of the enterprise, and the electricity charges of the respective hours are accumulated to obtain a total electricity charge of the enterprise. | 10-30-2014 |
| 20140351285 | PLATFORM AND METHOD FOR ANALYZING ELECTRIC POWER SYSTEM DATA - Disclosed are a platform and method for analyzing electric power system data. The platform uses a cloud-distributed database to store data to be processed, performs, based on a received operating command, immediate inquiry and/or multi-dimensional analysis and/or machine learning and the like on the data to be processed so as to analyze said data, and achieves knowledge mining of said data through machine learning algorithm analysis. Through the platform and method for analyzing electric power system data disclosed in the present invention, unknown and valuable data can be extracted using a machine learning algorithm, thereby providing advantageous support for enterprise decisions. | 11-27-2014 |
| 20140358315 | INTELLIGENT POWER UTILIZATION SYSTEM AND METHOD FOR PARKS - A system for intelligent electric power utilization of park and a method thereof are provided. The system includes an acquisition system, a data processing system, an application system and a service system through which the acquisition system, the data processing system and the application system are connected to external system. The application system includes an intelligent interaction application subsystem, an electric power utilization monitoring application subsystem, an energy efficiency analysis application subsystem, an orderly electric power utilization application subsystem, a system security application subsystem and a man-machine interaction interface. Enterprise users are leaded to actively carry out requirement response. Energy conservation and emission reduction and peak shaving and valley filling are effectively realized in intelligent park. Capability of intelligent electric power utilization of the park is improved. Accordingly, load balancing capability of region is improved and safe and stable operation of the power grid is ensured. | 12-04-2014 |
| 20160005205 | SMART ERASER TO ERASE DIGITAL STROKES - Embodiments of the present invention provide systems, methods, and computer storage media directed to a smart eraser. As such, a particular drawing stroke on a canvas or background can be erased without erasing other strokes overlapping with the eraser path. In some implementations, smart eraser functionality can be triggered by beginning an eraser path at a point that coincides with the stroke to which the smart eraser functionality is to be applied. | 01-07-2016 |
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| 20120118363 | ORGANIC SEMICONDUCTORS AS WINDOW LAYERS FOR INORGANIC SOLAR CELLS - Disclosed is a device comprising: an anode; a cathode; an inorganic substrate; and at least one organic window layer positioned between: the anode and the inorganic substrate; or the cathode and the inorganic substrate. Also disclosed is a method of enhancing the performance of a photosensitive device having an anode, a cathode, and an inorganic substrate, comprising: positioning at least one organic window layer between the anode and the cathode. In one embodiment the organic window layer may absorb light and generate excitons that migrate to the inorganic where they convert to photocurrent, thereby increasing the efficiency of the device. Also disclosed is a method of enhancing Schottky barrier height of a photosensitive device, the method being substantially similar to the previously defined method. | 05-17-2012 |
| 20130082303 | HIGH THROUGHPUT EPITAXIAL LIFTOFF FOR RELEASING MULTIPLE SEMICONDUCTOR DEVICE LAYERS FROM A SINGLE BASE SUBSTRATE - A multilayered stack including alternating layers of sacrificial material layers and semiconductor material layers is formed on a base substrate. The thickness of each sacrificial material layer of the stack increases upwards from the sacrificial material layer that is formed nearest to the base substrate. Because of this difference in thicknesses, each sacrificial material layer etches at different rates, with thicker sacrificial material layers etching faster than thinner sacrificial material layers. An etch is performed that first removes the thickest sacrificial material layer of the multilayered stack. The uppermost semiconductor device layer within the multilayered stack is accordingly first released. As the etch continues, the other sacrificial material layers are removed sequentially, in the order of decreasing thickness, and the other semiconductor device layers are removed sequentially. | 04-04-2013 |
| 20130082356 | HIGH THROUGHPUT EPITAXIAL LIFTOFF FOR RELEASING MULTIPLE SEMICONDUCTOR DEVICE LAYERS FROM A SINGLE BASE SUBSTRATE - In one embodiment, a semiconductor structure is provided which includes a base substrate, and a multilayered stack located on the base substrate. The multilayered stack includes, from bottom to top, a first sacrificial material layer having a first thickness, a first semiconductor device layer, a second sacrificial material layer having a second thickness, and a second semiconductor device layer, wherein the first thickness is less than the second thickness. | 04-04-2013 |
| 20130126493 | SPALLING WITH LASER-DEFINED SPALL EDGE REGIONS - Laser ablation can be used to form a trench within at least a blanket layer of a stressor layer that is atop a base substrate. A non-ablated portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can also be used to form a trench within a blanket material stack including at least a plating seed layer. A stressor layer is formed on the non-ablated portions of the material stack and one portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can be further used to form a trench that extends through a blanket stressor layer and into the base substrate itself. The trench has an edge that defines the edge of the material layer region to be spalled. | 05-23-2013 |
| 20130292801 | HIGH THROUGHPUT EPITAXIAL LIFTOFF FOR RELEASING MULTIPLE SEMICONDUCTOR DEVICE LAYERS FROM A SINGLE BASE SUBSTRATE - A semiconductor structure is provided that includes a base substrate, and a multilayered stack located on the base substrate. The multilayered stack includes, from bottom to top, a first sacrificial material layer having a first thickness, a first semiconductor device layer, a second sacrificial material layer having a second thickness, and a second semiconductor device layer, wherein the first thickness is less than the second thickness. | 11-07-2013 |
| 20130295750 | HIGH THROUGHPUT EPITAXIAL LIFTOFF FOR RELEASING MULTIPLE SEMICONDUCTOR DEVICE LAYERS FROM A SINGLE BASE SUBSTRATE - A method of removing a plurality of semiconductor device layers from an underlying base substrate. A multilayered stack including alternating layers of sacrificial material layers and semiconductor material layers is formed on a base substrate. Each successive sacrificial material layer that is formed is thicker than the previously formed sacrificial material layer. An etch is then performed that first removes the thickest sacrificial material layer of the multilayered stack. The uppermost semiconductor device layer within the multilayered stack is accordingly first released. As the etch continues, the other sacrificial material layers are removed sequentially, in the order of decreasing thickness, and the other semiconductor device layers are removed sequentially. | 11-07-2013 |
| 20130312819 | REMOVAL OF STRESSOR LAYER FROM A SPALLED LAYER AND METHOD OF MAKING A BIFACIAL SOLAR CELL USING THE SAME - A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell. | 11-28-2013 |
| 20130316488 | REMOVAL OF STRESSOR LAYER FROM A SPALLED LAYER AND METHOD OF MAKING A BIFACIAL SOLAR CELL USING THE SAME - A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell. | 11-28-2013 |
| 20130316538 | SURFACE MORPHOLOGY GENERATION AND TRANSFER BY SPALLING - The generation of surface patterns or the replication of surface patterns is achieved in the present disclosure without the need to employ an etching process. Instead, a unique fracture mode referred to as spalling is used in the present disclosure to generate or replicate surface patterns. In the case of surface pattern generation, a surface pattern is provided in a stressor layer and then spalling is performed. In the case of surface pattern replication, a surface pattern is formed within or on a surface of a base substrate, and then a stressor layer is applied. After applying the stressor layer, spalling is performed. Generation or replication of surface patterns utilizing spalling provides a low cost means for generation or replication of surface patterns. | 11-28-2013 |
| 20130316542 | SPALLING UTILIZING STRESSOR LAYER PORTIONS - A method for spalling local areas of a base substrate utilizing at least one stressor layer portion which is located on a portion, but not all, of an uppermost surface of a base substrate. The method includes providing a base substrate having a uniform thickness and a planar uppermost surface spanning across an entirety of the base substrate. At least one stressor layer portion having a shape is formed on at least a portion, but not all, of the uppermost surface of the base substrate. Spalling is performed which removes a material layer portion from the base substrate and provides a remaining base substrate portion. The material layer portion has the shape of the at least one stressor layer portion, while the remaining base substrate portion has at least one opening located therein which correlates to the shape of the at least one stressor layer. | 11-28-2013 |
| 20140007932 | FLEXIBLE III-V SOLAR CELL STRUCTURE - Solar cell structures include stacked layers in reverse order on a germanium substrate wherein a n++ (In)GaAs buffer layer plays dual roles as buffer and contact layers in the inverted structures. The absorbing layers employed in such exemplary structures are III-V layers such as (In)GaAs. Controlled spalling may be employed as part of the fabrication process for the solar cell structures, which may be single or multi-junction. The requirement for etching a buffer layer is eliminated, thereby facilitating the manufacturing process of devices using the disclosed structures. | 01-09-2014 |
| 20140034699 | METHOD FOR IMPROVING QUALITY OF SPALLED MATERIAL LAYERS - Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process in which the spalled material has less surface roughness at one of its' edges as compared to prior art spalling processes in which the mode III stress is present and competes with spalling. | 02-06-2014 |
| 20140084251 | ZINC OXIDE-CONTAINING TRANSPARENT CONDUCTIVE ELECTRODE - A transparent conductive electrode stack containing a work function adjusted zinc oxide is provided. Specifically, the transparent conductive electrode stack includes a layer of zinc oxide and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack shifts the work function of the layer of zinc oxide to a higher value for better hole injection into the OLED device as compared to a transparent conductive electrode that includes only a layer of zinc oxide and no work function modifying material. | 03-27-2014 |
| 20140084252 | DOPED GRAPHENE TRANSPARENT CONDUCTIVE ELECTRODE - Graphene is used as a replacement for indium tin oxide as a transparent conductive electrode which can be used in an organic light emitting diode (OLED) device. Using graphene reduces the cost of manufacturing OLED devices and also makes the OLED device extremely flexible. The graphene is chemically doped so that the work function of the graphene is shifted to a higher value for better hole injection into the OLED device as compared to an OLED device containing an undoped layer of graphene. An interfacial layer comprising a conductive polymer and/or metal oxide can also be used to further reduce the remaining injection barrier. | 03-27-2014 |
| 20140084253 | TRANSPARENT CONDUCTIVE ELECTRODE STACK CONTAINING CARBON-CONTAINING MATERIAL - A transparent conductive electrode stack containing a work function adjusted carbon-containing material is provided. Specifically, the transparent conductive electrode stack includes a layer of a carbon-containing material and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack shifts the work function of the layer of carbon-containing material to a higher value for better hole injection into the OLED device as compared to a transparent conductive electrode that includes only a layer of carbon-containing material and no work function modifying material. | 03-27-2014 |
| 20140084254 | OLED DISPLAY WITH SPALLED SEMICONDUCTOR DRIVING CIRCUITRY AND OTHER INTEGRATED FUNCTIONS - Spalling is employed to generate a single crystalline semiconductor layer. Complementary metal oxide semiconductor (CMOS) logic and memory devices are formed on a single crystalline semiconductor substrate prior to spalling. Organic light emitting diode (OLED) driving circuitry, solar cells, sensors, batteries and the like can be formed prior to, or after, spalling. The spalled single crystalline semiconductor layer can be transferred to a substrate. OLED displays can be formed into the spalled single crystalline semiconductor layer to achieve a structure including an OLED display with semiconductor driving circuitry and other functions integrated on the single crystalline semiconductor layer. | 03-27-2014 |
| 20140087500 | TRANSPARENT CONDUCTIVE ELECTRODE STACK CONTAINING CARBON-CONTAINING MATERIAL - A transparent conductive electrode stack containing a work function adjusted carbon-containing material is provided. Specifically, the transparent conductive electrode stack includes a layer of a carbon-containing material and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack shifts the work function of the layer of carbon-containing material to a higher value for better hole injection into the OLED device as compared to a transparent conductive electrode that includes only a layer of carbon-containing material and no work function modifying material. | 03-27-2014 |
| 20140087501 | DOPED GRAPHENE TRANSPARENT CONDUCTIVE ELECTRODE - Graphene is used as a replacement for indium tin oxide as a transparent conductive electrode which can be used in an organic light emitting diode (OLED) device. Using graphene reduces the cost of manufacturing OLED devices and also makes the OLED device extremely flexible. The graphene is chemically doped so that the work function of the graphene is shifted to a higher value for better hole injection into the OLED device as compared to an OLED device containing an undoped layer of graphene. An interfacial layer comprising a conductive polymer and/or metal oxide can also be used to further reduce the remaining injection barrier. | 03-27-2014 |
| 20140087504 | OLED DISPLAY WITH SPALLED SEMICONDUCTOR DRIVING CIRCUITRY AND OTHER INTEGRATED FUNCTIONS - Spalling is employed to generate a single crystalline semiconductor layer. Complementary metal oxide semiconductor (CMOS) logic and memory devices are formed on a single crystalline semiconductor substrate prior to spalling. Organic light emitting diode (OLED) driving circuitry, solar cells, sensors, batteries and the like can be formed prior to, or after, spalling. The spalled single crystalline semiconductor layer can be transferred to a substrate. OLED displays can be formed into the spalled single crystalline semiconductor layer to achieve a structure including an OLED display with semiconductor driving circuitry and other functions integrated on the single crystalline semiconductor layer. | 03-27-2014 |
| 20140087506 | ZINC OXIDE-CONTAINING TRANSPARENT CONDUCTIVE ELECTRODE - A transparent conductive electrode stack containing a work function adjusted zinc oxide is provided. Specifically, the transparent conductive electrode stack includes a layer of zinc oxide and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack shifts the work function of the layer of zinc oxide to a higher value for better hole injection into the OLED device as compared to a transparent conductive electrode that includes only a layer of zinc oxide and no work function modifying material. | 03-27-2014 |
| 20140179045 | TRANSPARENT CONDUCTIVE ELECTRODE STACK CONTAINING CARBON-CONTAINING MATERIAL - A transparent conductive electrode stack containing a work function adjusted carbon-containing material is provided. Specifically, the transparent conductive electrode stack includes a layer of a carbon-containing material and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack shifts the work function of the layer of carbon-containing material to a higher value for better hole injection into the OLED device as compared to a transparent conductive electrode that includes only a layer of carbon-containing material and no work function modifying material. | 06-26-2014 |
| 20140191237 | CRYSTALLINE THIN-FILM TRANSISTOR - A method for forming a thin film transistor includes joining a crystalline substrate to an insulating substrate. A doped layer is deposited on the crystalline substrate, and the doped layer is patterned to form source and drain regions. The crystalline substrate is patterned to form an active area such that a conductive channel is formed in the crystalline substrate between the source and drain regions. A gate stack is formed between the source and drain regions, and contacts are formed to the source and drain regions and the gate stack through a passivation layer. | 07-10-2014 |
| 20150140830 | METHOD FOR IMPROVING QUALITY OF SPALLED MATERIAL LAYERS - Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process in which the spalled material has less surface roughness at one of its' edges as compared to prior art spalling processes in which the mode III stress is present and competes with spalling. | 05-21-2015 |
| 20150243796 | BACK GATE SINGLE-CRYSTAL FLEXIBLE THIN FILM TRANSISTOR AND METHOD OF MAKING - A gate dielectric material and a gate conductor portion are formed on a single-crystal semiconductor material of a substrate. A dielectric structure is then formed surrounding the gate conductor portion and thereafter a stressor layer is formed on the dielectric structure. A controlled spalling process is then performed and thereafter a material removal process can be used to expose a surface of the single-crystal semiconductor material. A source region and a drain region are then formed on the exposed surface of the single-crystal semiconductor material, which exposed surface is opposite the surface including the gate dielectric. | 08-27-2015 |
| 20150249212 | OPTOELECTRONICS INTEGRATION BY TRANSFER PROCESS - A method for fabricating an optoelectronic device includes forming an adhesion layer on a substrate, forming a material layer on the adhesion layer and applying release tape to the material layer. The substrate is removed at the adhesion layer by mechanically yielding the adhesion layer. A conductive layer is applied to the material layer on a side opposite the release tape to form a transfer substrate. The transfer substrate is transferred to a target substrate to join the target substrate to the conductive layer of the transfer substrate. The release tape is removed from the material layer to form a top emission optoelectronic device. | 09-03-2015 |
| 20150325443 | SPALLING WITH LASER-DEFINED SPALL EDGE REGIONS - Laser ablation can be used to form a trench within at least a blanket layer of a stressor layer that is atop a base substrate. A non-ablated portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can also be used to form a trench within a blanket material stack including at least a plating seed layer. A stressor layer is formed on the non-ablated portions of the material stack and one portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can be further used to form a trench that extends through a blanket stressor layer and into the base substrate itself. The trench has an edge that defines the edge of the material layer region to be spalled. | 11-12-2015 |
| 20160035927 | Tandem Kesterite-Perovskite Photovoltaic Device - Tandem Kesterite-perovskite photovoltaic devices and techniques for formation thereof are provided. In one aspect, a tandem photovoltaic device is provided. The tandem photovoltaic device includes a bottom cell having a first absorber layer comprising copper, zinc, tin, and at least one of sulfur and selenium and a top cell connected in series with the bottom cell, the top cell having a second absorber layer comprising a perovskite material. A method of forming a tandem photovoltaic device is also provided. | 02-04-2016 |
| 20160070078 | INTRA CHIP OPTICAL INTERCONNECT STRUCTURE - An optical interconnect is located on a surface of a semiconductor handle substrate. The optical interconnect includes a waveguide core material portion that is completely surrounded on all four sides by a dielectric oxide-containing cladding structure. The dielectric oxide-containing material of the dielectric oxide-containing cladding structure that is located laterally adjacent end segments of the waveguide core material portion is configured to include a sidewall surface that can receive and transmit light. A plurality of semiconductor devices can be formed above the topmost dielectric oxide-containing material of the dielectric oxide-containing cladding structure. | 03-10-2016 |
| 20160087160 | III-V PHOTONIC INTEGRATED CIRCUITS ON SILICON SUBSTRATE - A semiconductor device including a substrate structure including a semiconductor material layer that is present directly on a buried dielectric layer in a first portion of the substrate structure and an isolation dielectric material that is present directly on the buried dielectric layer in a second portion of the substrate structure. The semiconductor device further includes a III-V optoelectronic device that is present in direct contact with the isolation dielectric material in a first region of the second portion of the substrate structure. A dielectric wave guide is present in direct contact with the isolation dielectric material in a second region of the second portion of the substrate structure. | 03-24-2016 |
| 20160103278 | COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE WITH III-V OPTICAL INTERCONNECT HAVING III-V EPITAXIALLY FORMED MATERIAL - An electrical device that in one embodiment includes a first semiconductor device positioned on a first portion of a type IV semiconductor substrate, and an optoelectronic light emission device of type III-V semiconductor materials that is in electrical communication with the first semiconductor device. The optoelectronic light emission device is positioned adjacent to the first semiconductor device on the first portion of the type IV semiconductor substrate. A dielectric waveguide is present on a second portion of the type IV semiconductor substrate. An optoelectronic light detection device of type III-V semiconductor material is present on a third portion of the type IV semiconductor device. The dielectric waveguide is positioned between and aligned with the optoelectronic tight detection device and optoelectronic light emission device to transmit a light signal from the optoelectronic light emission device to the optoelectronic light detection device. | 04-14-2016 |
| 20160105247 | COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE WITH III-V OPTICAL INTERCONNECT HAVING III-V EPITAXIAL SEMICONDUCTOR MATERIAL FORMED USING LATERAL OVERGROWTH - An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer. | 04-14-2016 |
| 20160109654 | VARIABLE BURIED OXIDE THICKNESS FOR A WAVEGUIDE - A semiconductor structure is provided in which a plurality of waveguide structures are embedded within a semiconductor handle substrate. Each waveguide structure includes, from bottom to top, a bottom oxide portion, a waveguide core material portion and a top oxide portion. An oxide capping layer is present on topmost surfaces of each waveguide structure and a topmost surface of the semiconductor handle substrate. A plurality of semiconductor devices is located above a topmost surface of the oxide capping layer. The structure has thicker buried oxide regions defined by the combined thicknesses of the top oxide portion and the oxide capping layer located in some areas, while thinner buried oxide regions defined only by the thickness of the oxide capping layer are present in other areas of the structure. | 04-21-2016 |
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| 20120203831 | Sponsored Stories Unit Creation from Organic Activity Stream - Methods, apparatuses and systems directed to sponsored story generation from an organic activity stream in a social networking site. A user wishing to promote an entry from an organic activity stream may, using a sponsor user interface, specify the types of stories to promote to a portion of the home page displayed to a member of a social network. | 08-09-2012 |
| 20120233009 | Endorsement Subscriptions for Sponsored Stories - Methods, apparatuses and systems directed to subscribing to a service for generating and delivering sponsored stories from an organic activity stream in a social networking site. A proxy bidder may aggressively proxy bid for the delivery of the sponsored stories based on a pacing algorithm and feedback loop monitoring the delivery level of sponsored stories. | 09-13-2012 |
| 20120239750 | Sponsored-Stories-Unit Creation from Organic Activity Stream - In one embodiment, a method includes receiving sponsor specifications designating story characteristics; monitoring an organic activity stream for entries matching the story characteristics; and, in response to identifying an entry as matching the story characteristics, providing for display the entry in a predetermined area of a web page. | 09-20-2012 |
| 20120246232 | Sponsored-Stories-Unit Creation from Organic Activity Stream - In one embodiment, a method includes receiving a bid to display in a predetermined area of a web page an organic-activity-stream entry matching particular story characteristics. The bid includes a bid amount and one or more targeting criteria. The method includes, n response to identifying an organic-activity-stream entry as matching the story characteristics, providing for display the organic-activity-stream entry in a predetermined area of a web page based at least in part on the bid amount and targeting criteria. | 09-27-2012 |
| 20130014030 | Sponsored-Stories-Unit Creation from Organic Activity Stream - In one embodiment, a method includes receiving a first selection of an entity associated with a user of a social-networking system; receiving a second selection of a type of user interaction with the entity; and providing the first and second selections for use in a sponsored-story specification. The use of the first and second selections in the sponsored-story specification facilitate entries in an organic activity stream of the social-networking system that match the sponsored-story specification being provided for display in pre-determined areas of web pages. | 01-10-2013 |
| 20130218962 | SPONSORED-STORIES-UNIT CREATION FROM ORGANIC ACTIVITY STREAM - In one embodiment, a method includes receiving sponsor specifications designating story characteristics; monitoring an organic activity stream for entries matching the story characteristics; and, in response to identifying an entry as matching the story characteristics, providing for display the entry in a predetermined area of a web page. | 08-22-2013 |
| 20130246940 | Sponsored-Stories-Unit Creation from Organic Activity Stream - In one embodiment, a method includes receiving a first selection of an entity associated with a user of a social-networking system; receiving a second selection of a type of user interaction with the entity; and providing the first and second selections for use in a sponsored-story specification. The use of the first and second selections in the sponsored-story specification facilitate entries in an organic activity stream of the social-networking system that match the sponsored-story specification being provided for display in pre-determined areas of web pages. | 09-19-2013 |
| 20130297702 | SPONSORED-STORIES-UNIT CREATION FROM ORGANIC ACTIVITY STREAM - A method includes receiving sponsor specifications designating story characteristics, monitoring an organic activity stream for entries matching the story characteristics, and, in response to identifying an entry as matching the story characteristics, providing for display the entry in a predetermined area of a web page. | 11-07-2013 |
| 20140006173 | INTERFACE FOR SPONSORING STORIES WITHIN A SOCIAL NETWORKING SYSTEM | 01-02-2014 |
| 20140006501 | SPONSORED STORIES APPLICATION PROGRAMMING INTERFACE (API) | 01-02-2014 |
| 20140040042 | MONITORING ACTIVITY STREAM FOR SPONSORED STORY CREATION - A method includes monitoring an activity stream to identify actions that match stored sponsored story specifications, for providing one or more sponsored stories to a viewing user. The sponsored story specifications include a visual specification for the sponsored story, and matched sponsored stories are ranked for a viewing user. Users can set privacy preferences related to sponsored stories. The ranking and privacy settings contribute to which sponsored stories are provided for display to the viewing user. | 02-06-2014 |
| 20140108965 | SPONSORED STORY SHARING USER INTERFACE - A method includes monitoring an activity stream to identify actions that match stored sponsored story specifications, for providing one or more sponsored stories to a viewing user. The sponsored story specifications include a visual specification for the sponsored story, and matched sponsored stories are ranked for a viewing user. Users can set privacy preferences related to sponsored stories. The ranking and privacy settings contribute to which sponsored stories are provided for display to the viewing user. | 04-17-2014 |
| 20140115500 | SPONSORED STORY USER INTERFACE - A method includes monitoring an activity stream to identify actions that match stored sponsored story specifications, for providing one or more sponsored stories to a viewing user. The sponsored story specifications include a visual specification for the sponsored story, and matched sponsored stories are ranked for a viewing user. Users can set privacy preferences related to sponsored stories. The ranking and privacy settings contribute to which sponsored stories are provided for display to the viewing user. | 04-24-2014 |
| 20140122249 | SPONSORED STORY CREATION USING INFERENTIAL TARGETING - A method includes monitoring an activity stream to identify actions that match stored sponsored story specifications, for providing one or more sponsored stories to a viewing user. The sponsored story specifications include a visual specification for the sponsored story, and matched sponsored stories are ranked for a viewing user. Users can set privacy preferences related to sponsored stories. The ranking and privacy settings contribute to which sponsored stories are provided for display to the viewing user. | 05-01-2014 |
| 20140123034 | SPONSORED STORY CREATION USER INTERFACE - A method includes monitoring an activity stream to identify actions that match stored sponsored story specifications, for providing one or more sponsored stories to a viewing user. The sponsored story specifications include a visual specification for the sponsored story, and matched sponsored stories are ranked for a viewing user. Users can set privacy preferences related to sponsored stories. The ranking and privacy settings contribute to which sponsored stories are provided for display to the viewing user. | 05-01-2014 |
| 20140337142 | Sponsored Stories Application Programming Interface (API) - To provide a sponsored story unit, the social networking system receives a story request from an advertiser. The story request specifies properties of content used to generate the sponsored story. When the social networking system stores an object or an action performed on an object, properties associated with, and describing, the object or the action are also stored. For example, properties of an object include an object type, an object identifier, metadata describing the object or other suitable information. The social networking system identifies actions or objects associated with users connected to a viewing user having one or more properties included in a story request. A sponsored story is generated from the identified actions or objects and presented to a viewing user. | 11-13-2014 |
| 20140365565 | SPONSORED STORIES APPLICATION PROGRAMMING INTERFACE (API) - To provide a sponsored story unit, the social networking system receives a story request from an advertiser. The story request specifies properties of content used to generate the sponsored story. When the social networking system stores an object or an action performed on an object, properties associated with, and describing, the object or the action are also stored. For example, properties of an object include an object type, an object identifier, metadata describing the object or other suitable information. The social networking system identifies actions or objects associated with users connected to a viewing user having one or more properties included in a story request. A sponsored story is generated from the identified actions or objects and presented to a viewing user. | 12-11-2014 |
| Patent application number | Description | Published |
|---|
| 20140023794 | Method And Apparatus For Low Temperature ALD Deposition - Provided are methods and apparatus for low temperature atomic layer deposition of a densified film. A low temperature film is formed and densified by exposure to one or more of a plasma or radical species. The resulting densified film has superior properties to low temperature films formed without densification. | 01-23-2014 |
| 20140273524 | Plasma Doping Of Silicon-Containing Films - Provided are methods for the deposition and doping of films comprising Si. Certain methods involve depositing a SiN, SiO, SiON, SiC or SiCN film and doping the Si-containing film with one or more of C, B, O, N and Ge by a plasma implantation process. Such doped Si-containing films may have improved properties such as reduced etch rate in acid-based clean solutions, reduced dielectric constant and/or improved dielectric strength. | 09-18-2014 |
| 20150147484 | Atomic Layer Deposition Of Films Comprising Silicon, Carbon And Nitrogen Using Halogenated Silicon Precursors - Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma. | 05-28-2015 |
| 20150200110 | Self-Aligned Double Patterning With Spatial Atomic Layer Deposition - Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition. | 07-16-2015 |
| 20150252477 | IN-SITU CARBON AND OXIDE DOPING OF ATOMIC LAYER DEPOSITION SILICON NITRIDE FILMS - Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for forming a dielectric film. In one embodiment, the method includes placing a plurality of substrates inside a processing chamber and performing a sequence of exposing the substrates to a first reactive gas comprising silicon, and then exposing the substrates to a plasma of a second reactive gas comprising nitrogen and at least one of oxygen or carbon, and repeating the sequence to form the dielectric film comprising silicon carbon nitride or silicon carbon oxynitride on each of the substrates. | 09-10-2015 |
| 20150255324 | SEAMLESS GAP-FILL WITH SPATIAL ATOMIC LAYER DEPOSITION - Embodiments disclosed herein generally relate to forming dielectric materials in high aspect ratio features. In one embodiment, a method for filling high aspect ratio trenches in one processing chamber is disclosed. The method includes placing a substrate inside a processing chamber, where the substrate has a surface having a plurality of high aspect ratio trenches and the surface is facing a gas/plasma distribution assembly. The method further includes performing a sequence of depositing a layer of dielectric material on the surface of the substrate and inside each of the plurality of trenches, where the layer of dielectric material is on a bottom and side walls of each trench, and removing a portion of the layer of dielectric material disposed on the surface of the substrate, where an opening of each trench is widened. The sequence repeats until the trenches are filled seamlessly with the dielectric material. | 09-10-2015 |
| 20150299856 | ACCURATE FILM THICKNESS CONTROL IN GAP-FILL TECHNOLOGY - Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for accurate control of film thickness using deposition-etch cycles. Particularly, embodiments of the present disclosure may be used in controlling film thickness during filling high aspect ratio features. | 10-22-2015 |
| 20160068953 | Gas Separation Control in Spatial Atomic Layer Deposition - Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system. | 03-10-2016 |
| 20160099143 | High Temperature Silicon Oxide Atomic Layer Deposition Technology - Processes for depositing SiO | 04-07-2016 |
