| Patent application number | Description | Published |
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| 20110205269 | PRINTING APPARATUS AND DRIVING METHOD OF A LIQUID EJECTING HEAD - In a highly integrated printing head forming an image with continuously ejected ink droplets, there are disadvantages of a high cost for a control circuit and wirings due to a large number of the wirings for charging electrode, a difficulty for ensuring electrical insulation between the wirings having a narrow pitch and a high density, and an induced voltage in the wirings due to the mutual induction therebetween. Therefore, the present invention is to divide a plurality of nozzles into a plurality of groups, shift production timings to each other between the groups, and apply a charging voltage via a common wiring to which the charging electrodes corresponding to each other between the groups are commonly connected. | 08-25-2011 |
| 20130093819 | LIQUID EJECTION HEAD AND LIQUID EJECTION APPARATUS - Provided is a continuous liquid ejection head that collects droplets which are not used for printing (unused droplets) without affecting the flight of droplets which are used for printing (used droplets). An ejection nozzle ( | 04-18-2013 |
| 20130342611 | LIQUID DISCHARGE HEAD - A liquid discharge head including: a surface plate having a plurality of discharge ports; and a liquid discharge body having a discharge portion, wherein: the discharge portion and an opening are alternately arranged on the liquid discharge body and the liquid discharge body includes a bonding unit formed by combining two piezoelectric material plates; and the piezoelectric material plate is provided with a plurality of grooves on a first surface and has a first electrode on one side wall surface and the bottom of the groove of the piezoelectric material plate, a second electrode on the other side wall surface, and a third electrode on a second surface, the piezoelectric material plate is polarized in a direction connecting the first electrode, the second electrode, and the third electrode, and the two piezoelectric material plates are bonded so that the first surfaces face each other to form the bonding unit. | 12-26-2013 |
| 20130342616 | LIQUID DISCHARGE HEAD - Provided is a liquid discharge head, including a piezoelectric block formed by stacking multiple piezoelectric substrates, each of the multiple piezoelectric substrates including a first main surface and a second main surface and having a first groove and a second groove alternately formed in the first main surface, in which the each of the multiple piezoelectric substrates includes a first in-groove electrode, a first rear surface electrode, a second in-groove electrode, and a second rear surface electrode | 12-26-2013 |
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| 20090269493 | METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON ROD - The present invention utilizes a silicon member (single-crystalline silicon rod), which is cut out from a single-crystalline silicon ingot which is grown by a CZ method or FZ method, as the core wire when manufacturing a silicon rod. Specifically, a planar silicon is cut out from a body portion which is obtained by cutting off a shoulder portion and a tail portion from a single-crystalline silicon ingot and is further cut into thin rectangles to obtain a silicon bar. In the case that the crystal growth axis orientation is <100>, there are four crystal habit lines, and the silicon bar is cut out such that the surface forms an off-angle θ in a predetermined range with the crystal habit line. The provided polycrystalline silicon rod has a low impurity contamination and high single-crystallization efficiency. | 10-29-2009 |
| 20120201976 | CORE WIRE HOLDER FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON - One end side of a core wire holder | 08-09-2012 |
| 20120237429 | REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON, SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON - An inner wall | 09-20-2012 |
| 20130089489 | METHOD FOR CLEANING BELL JAR, METHOD FOR PRODUCING POLYCRYSTALLINE SILICON, AND APPARATUS FOR DRYING BELL JAR - A bell jar includes a metallic bell jar ( | 04-11-2013 |
| 20130102092 | POLYCRYSTALLINE SILICON ROD AND METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON ROD - The length of the polycrystalline silicon rod ( | 04-25-2013 |
| 20130302528 | APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON - Raw material gas supply nozzles are arranged within a virtual concentric circle having its center at the center of a disk-like base plate (having an area half as large as an area of the base plate). Raw material gas is ejected at a flow velocity of 150 m/sec or more into a bell jar from the gas supply nozzles. In addition to one gas supply nozzle provided in a center portion of the base plate, three gas supply nozzles can be arranged at the vertex positions of a regular triangle inscribed in a circumscribed circle having its center at the gas supply nozzle in the center portion. With the gas supply nozzles so arranged, a smooth circulating flow is formed within a reactor. | 11-14-2013 |
| 20140030440 | SILICON CORE WIRE HOLDER AND POLYCRYSTALLINE SILICON MANUFACTURING METHOD - A core wire holder | 01-30-2014 |
| 20140033966 | METHOD FOR SELECTING POLYCRYSTALLINE SILICON ROD, AND METHOD FOR PRODUCING SINGLE-CRYSTALLINE SILICON - Plate-like samples each having as a principal plane thereof a cross section perpendicular to the long axis direction of a polycrystalline silicon rod grown by the deposition using a chemical vapor deposition method are sampled; an X-ray diffraction measurement is performed omnidirectionally in the plane of each of the plate-like samples thus sampled; and when none of the plate-like samples has any X-ray diffraction peak with a diffraction intensity deviating from the average value ±2×standard deviation (μ±2σ) found for any one of the Miller indices <111>, <220>, <311> and <400>, the polycrystalline silicon rod is selected as the raw material for use in the production of single-crystalline silicon. The use of such a polycrystalline silicon raw material suppresses the local occurrence of the portions remaining unmelted, and can contribute to the stable production of single-crystalline silicon. | 02-06-2014 |
| 20140134832 | POLYCRYSTALLINE SILICON MANUFACTURING APPARATUS AND POLYCRYSTALLINE SILICON MANUFACTURING METHOD - In order to obtain a polycrystalline silicon rod having an excellent shape, the placement relation between a source gas supplying nozzle | 05-15-2014 |
| 20140302239 | PRODUCTION METHOD FOR POLYCRYSTALLINE SILICON, AND REACTOR FOR POLYCRYSTALLINE SILICON PRODUCTION - The present invention provides a method of producing polycrystalline silicon in which silicon is precipitated on a silicon core wire to obtain a polycrystalline silicon rod. In an initial stage (former step) of a precipitation reaction, a reaction rate is not increased by supplying a large amount of source gas to a reactor but the reaction rate is increased by increasing a concentration of the source gas to be supplied, and in a latter step after the former step, the probability of occurrence of popcorn is reduced using an effect of high-speed forced convection caused by blowing the source gas into the reactor at high speed. Thus, a high-purity polycrystalline silicon rod with little popcorn can be produced without reducing production efficiency even in a reaction system with high pressure, high load, and high speed. | 10-09-2014 |
| 20150017349 | POLYCRYSTALLINE SILICON ROD MANUFACTURING METHOD - Switches (S | 01-15-2015 |
| 20150037516 | POLYCRYSTALLINE SILICON ROD MANUFACTURING METHOD - Switches (S | 02-05-2015 |
| 20150047554 | METHOD FOR EVALUATING DEGREE OF CRYSTAL ORIENTATION IN POLYCRYSTALLINE SILICON, SELECTION METHOD FOR POLYCRYSTALLINE SILICON RODS, AND PRODUCTION METHOD FOR SINGLE-CRYSTAL SILICON - When a plate-like sample | 02-19-2015 |
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| 20120175613 | POLYCRYSTALLINE SILICON MASS AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON MASS - The present invention provides a clean and high-purity polycrystalline silicon mass having a small content of chromium, iron, nickel, copper, and cobalt in total, which are heavy metal impurities that reduce the quality of single-crystal silicon. In the vicinity of an electrode side end of a polycrystalline silicon rod obtained by the Siemens method, the total of the chromium, iron, nickel, copper, and cobalt concentrations is high. Accordingly, before a crushing step of a polycrystalline silicon rod | 07-12-2012 |
| 20120207662 | SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON - The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water | 08-16-2012 |
| 20120222619 | CARBON ELECTRODE AND APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON ROD - The upper electrode | 09-06-2012 |
