Patent application number | Description | Published |
20090020150 | STRUCTURES OF ORDERED ARRAYS OF SEMICONDUCTORS - A device having arrays of semiconductor structures with dimensions, ordering and orientations to provide for light absorption and charge carrier separation. The semiconductor structures are formed with relatively high aspect ratios, that is, the structures are long in the direction of received light, but have relatively small radii to facilitate efficient radial collection of carriers. | 01-22-2009 |
20090020853 | STRUCTURES OF AND METHODS FOR FORMING VERTICALLY ALIGNED Si WIRE ARRAYS - A structure consisting of vertically aligned wire arrays on a Si substrate and a method for producing such wire arrays. The wire arrays are fabricated and positioned on a substrate with an orientation and density particularly adapted for conversion of received light to energy. A patterned oxide layer is used to provide for wire arrays that exhibit narrow diameter and length distribution and provide for controlled wire position. | 01-22-2009 |
20090057839 | POLYMER-EMBEDDED SEMICONDUCTOR ROD ARRAYS - A structure consisting of well-ordered semiconductor structures embedded in a binder material which maintains the ordering and orientation of the semiconductor structures. Methods for forming such a structure include forming the semiconductor structures on a substrate, casting a binder material onto the substrate to embed the semiconductor structures in the binder material, and separating the binder material from the substrate at the substrate. These methods provide for the retention of the orientation and order of highly ordered semiconductor structures in the separated binder material. | 03-05-2009 |
20090061600 | METHOD FOR REUSE OF WAFERS FOR GROWTH OF VERTICALLY-ALIGNED WIRE ARRAYS - Reusing a Si wafer for the formation of wire arrays by transferring the wire arrays to a polymer matrix, reusing a patterned oxide for several array growths, and finally polishing and reoxidizing the wafer surface and reapplying the patterned oxide. | 03-05-2009 |
20090214762 | SPATIOTEMPORAL AND GEOMETRIC OPTIMIZATION OF SENSOR ARRAYS FOR DETECTING ANALYTES IN FLUIDS - Sensor arrays and sensor array systems for detecting analytes in fluids. Sensors configured to generate a response upon introduction of a fluid containing one or more analytes can be located on one or more surfaces relative to one or more fluid channels in an array. Fluid channels can take the form of pores or holes in a substrate material. Fluid channels can be formed between one or more substrate plates. Sensor can be fabricated with substantially optimized sensor volumes to generate a response having a substantially maximized signal to noise ratio upon introduction of a fluid containing one or more target analytes. Methods of fabricating and using such sensor arrays and systems are also disclosed. | 08-27-2009 |
20090309614 | TECHNIQUES AND SYSTEMS FOR ANALYTE DETECTION - Techniques are used to detect and identify analytes. Techniques are used to fabricate and manufacture sensors to detect analytes. An analyte ( | 12-17-2009 |
20100051478 | HIGH-THROUGHPUT SCREENING AND DEVICE FOR PHOTOCATALYSTS - The disclosure relates to compositions, devices and methods for screening of photocatalysts for water-splitting. | 03-04-2010 |
20100133098 | Methods and Devices for Concentration and Purification of Analytes for Chemical Analysis Including Matrix-Assisted Laser Desportion/Ionization (MALDI) Mass Spectrometry (MS) - Analytical methods and devices are disclosed for separating low abundance analytes by electrophoretically driving the analytes through a sieving matrix to first remove high molecular weight species. Subsequently the remaining low abundance analytes are electrophoretically focused onto a capture membrane where the analytes become bound within a small capture site. After this step the capture membrane may be allowed to dry and then attached to a conductive MALDI sample plate. | 06-03-2010 |
20100164073 | ELECTRICAL PASSIVATION OF SILICON-CONTAINING SURFACES USING ORGANIC LAYERS - Electrical structures and devices may be formed and include an organic passivating layer that is chemically bonded to a silicon-containing semiconductor material to improve the electrical properties of electrical devices. In different embodiments, the organic passivating layer may remain within finished devices to reduce dangling bonds, improve carrier lifetimes, decrease surface recombination velocities, increase electronic efficiencies, or the like. In other embodiments, the organic passivating layer may be used as a protective sacrificial layer and reduce contact resistance or reduce resistance of doped regions. The organic passivation layer may be formed without the need for high-temperature processing. | 07-01-2010 |
20110126892 | THREE-DIMENSIONAL PATTERNING METHODS AND RELATED DEVICES - Three-dimensional patterning methods of a three-dimensional microstructure, such as a semiconductor wire array, are described, in conjunction with etching and/or deposition steps to pattern the three-dimensional microstructure. | 06-02-2011 |
20110129714 | SEMICONDUCTOR WIRE ARRAY STRUCTURES, AND SOLAR CELLS AND PHOTODETECTORS BASED ON SUCH STRUCTURES - A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described. | 06-02-2011 |
20110309477 | GROUP IIB/VA SEMICONDUCTORS SUITABLE FOR USE IN PHOTOVOLTAIC DEVICES - The present invention relates to devices, particularly photovoltaic devices, incorporating Group IIB/VA semiconductors such phosphides, arsenides, and/or antimonides of one or more of Zn and/or Cd. In particular, the present invention relates to methodologies, resultant products, and precursors thereof in which electronic performance of the semiconductor material is improved by causing the Group IIB/VA semiconductor material to react with at least one metal-containing species (hereinafter co-reactive species) that is sufficiently co-reactive with at least one Group VA species incorporated into the Group IIB/VA semiconductor as a lattice substituent (recognizing that the same and/or another Group VA species also optionally may be incorporated into the Group IIB/VA semiconductor in other ways, e.g., as a dopant or the like). | 12-22-2011 |
20120028420 | METHOD FOR REUSE OF WAFERS FOR GROWTH OF VERTICALLY-ALIGNED WIRE ARRAYS - Reusing a Si wafer for the formation of wire arrays by transferring the wire arrays to a polymer matrix, reusing a patterned oxide for several array growths, and finally polishing and reoxidizing the wafer surface and reapplying the patterned oxide. | 02-02-2012 |
20120138456 | SOLAR FUELS GENERATOR - The solar fuels generator includes photoanodes that each extends outward from a first side of a membrane. The generator also includes photocathodes that each extends outward from a second side of the membrane. The photocathodes each includes a p-type semiconductor and the photoanodes each includes an n-type semiconductor. The p-type semiconductors are in electrical communication with the n-type semiconductors. | 06-07-2012 |
20120282761 | METHOD FOR REUSE OF WAFERS FOR GROWTH OF VERTICALLY-ALIGNED WIRE ARRAYS - Reusing a Si wafer for the formation of wire arrays by transferring the wire arrays to a polymer matrix, reusing a patterned oxide for several array growths, and finally polishing and reoxidizing the wafer surface and reapplying the patterned oxide. | 11-08-2012 |
20120313073 | NICKEL-BASED ELECTROCATALYTIC PHOTOELECTRODES - A photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconductive material having a photocatalyst such as nickel or nickel-molybdenum coated on the material. | 12-13-2012 |
20130092549 | PROTON EXCHANGE MEMBRANE ELECTROLYSIS USING WATER VAPOR AS A FEEDSTOCK - A light-driven electrolytic cell that uses water vapor as the feedstock and that has no wires or connections whatsoever to an external electrical power source of any kind. In one embodiment, the electrolytic cell uses a proton exchange membrane (PEM) with an IrRuO | 04-18-2013 |
20130098141 | LOCALIZED DEPOSITION OF POLYMER FILM ON NANOCANTILEVER CHEMICAL VAPOR SENSORS BY SURFACE-INITIATED ATOM TRANSFER RADICAL POLYMERIZATION - Cantilever chemical vapor sensors that can be tailored to respond preferentially in frequency by controlling the location of deposition of an adsorbing layer. Cantilever chemical vapor sensor having a base, one or more legs and a tip are fabricated using a gold layer to promote deposition of a sorbing layer of a polymeric material in a desired location, and using a chromium layer to inhibit deposition of the sorbing layer in other locations. Sorbing layers having different glass temperatures Tg and their effects are described. The methods of making such cantilever chemical vapor sensors are described. | 04-25-2013 |
20130174896 | TANDEM SOLAR CELL USING A SILICON MICROWIRE ARRAY AND AMORPHOUS SILICON PHOTOVOLTAIC LAYER - This invention relates to photovoltaic cells, devices, methods of making and using the same. | 07-11-2013 |
20130178360 | NICKEL-BASED ELECTROCATALYTIC PHOTOELECTRODES - The disclosure provides methods and compositions comprising metal alloy powders. The disclosure also provides a photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconductive material having a photocatalyst such as nickel or nickel-molybdenum coated on the material. | 07-11-2013 |
20130323877 | METHODOLOGY FOR FORMING PNICTIDE COMPOSITIONS SUITABLE FOR USE IN MICROELECTRONIC DEVICES - The present invention provides methods for making pnictide compositions, particularly photoactive and/or semiconductive pnictides. In many embodiments, these compositions are in the form of thin films grown on a wide range of suitable substrates to be incorporated into a wide range of microelectronic devices, including photovoltaic devices, photodetectors, light emitting diodes, betavoltaic devices, thermoelectric devices, transistors, other optoelectronic devices, and the like. As an overview, the present invention prepares these compositions from suitable source compounds in which a vapor flux is derived from a source compound in a first processing zone, the vapor flux is treated in a second processing zone distinct from the first processing zone, and then the treated vapor flux, optionally in combination with one or more other ingredients, is used to grow pnictide films on a suitable substrate. | 12-05-2013 |
20140096816 | HETEROJUNCTION MICROWIRE ARRAY SEMICONDUCTOR DEVICES - A heterojunction semiconductor device including an array of microstructures, each microstructure including a microwire of a first semiconductor material and a coating of a second semiconductor material forming a heterojunction with the microwire; a first electrical contact and a second electrical contact, one of which is connected to the microwire and the other of which is connected to the coating, is described. Also described are considerations for configuring the array of microstructures, and methods of forming the array of microstructures. | 04-10-2014 |
20140360566 | METHOD OF MAKING PHOTOVOLTAIC DEVICES INCORPORATING IMPROVED PNICTIDE SEMICONDUCTOR FILMS USING METALLIZATION/ANNEALING/REMOVAL TECHNIQUES - The present invention provides methods of making photovoltaic devices incorporating improved pnictide semiconductor films. In particular, the principles of the present invention are used to improve the surface quality of pnictide films. Photovoltaic devices incorporating these films demonstrate improved electronic performance. As an overview, the present invention involves a methodology that metalizes the pnictide film, anneals the metalized film under conditions that tend to form an alloy between the pnictide film and the alloy, and then removes the excess metal and at least a portion of the alloy. In one mode of practice, the pnictide semiconductor is Zinc phosphide and the metal is Magnesium. | 12-11-2014 |