Patent application number | Description | Published |
20090230390 | THIN FILM TRANSISTOR AND DISPLAY - A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer. | 09-17-2009 |
20100133525 | THIN FILM TRANSISTOR, DISPLAY UNIT, AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR - A thin film transistor includes: a gate electrode; a gate insulting film formed on the gate electrode; an oxide semiconductor thin film layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective layer that is formed at least in a region corresponding to the channel region on the gate insulating film and the oxide semiconductor thin film layer, and that includes a first channel protective layer on a lower layer side and a second channel protective layer on an upper layer side; and a source/drain electrode that is formed on the channel protective layer and is electrically connected to the oxide semiconductor thin film layer. The first channel protective layer is made of an oxide insulating material, and one or both of the first channel protective layer and the second channel protective layer is made of a low oxygen permeable material. | 06-03-2010 |
20100193772 | Thin film transistor and display device - Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film. | 08-05-2010 |
20100193784 | THIN-FILM TRANSISTOR AND DISPLAY DEVICE - A thin-film transistor includes: a gate electrode formed on a substrate; an oxide semiconductor layer forming a channel region corresponding to the gate electrode; a first gate insulating film formed on the substrate and the gate electrode, and including a silicon nitride film; a second gate insulating film selectively formed to contact with the oxide semiconductor layer in a region, on the first gate insulating film, corresponding to the oxide semiconductor layer, and including one of a silicon oxide film and a silicon oxynitride film; a source/drain electrode; and a protecting film. An upper surface and a side surface of the oxide semiconductor layer and a side surface of the second gate insulating film are covered, on the first gate insulating film, by the source/drain electrode and the protecting film. | 08-05-2010 |
20100200843 | THIN FILM TRANSISTOR AND DISPLAY UNIT - A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same are provided. The thin film transistor includes sequentially over a substrate a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer. | 08-12-2010 |
20110095288 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - There is provided a thin film transistor capable of suppressing generation of a leak current in an oxide semiconductor film. A thin film transistor | 04-28-2011 |
20110140116 | THIN FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC DEVICE - The present invention provides a thin film transistor using an oxide semiconductor as a channel, controlling threshold voltage to a positive direction, and realizing improved reliability. The thin film transistor includes: a gate electrode; a pair of source/drain electrodes; an oxide semiconductor layer provided between the gate electrode and the pair of source/drain electrodes and forming a channel; a first insulating film as a gate insulating film provided on the gate electrode side of the oxide semiconductor layer; and a second insulating film provided on the pair of source/drain electrodes side of the oxide semiconductor layer. The first insulating film and/or the second insulating film contain/contains fluorine. | 06-16-2011 |
20110180802 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - Provided are a thin film transistor that is capable of suppressing desorption of oxygen and others from an oxide semiconductor layer, and reducing the time to be taken for film formation, and a display device provided therewith. A gate insulation film | 07-28-2011 |
20110186853 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT - A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method. | 08-04-2011 |
20110215328 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR, AND DISPLAY DEVICE - There is provided a thin film transistor, which has a uniform and good electric characteristic and has a simple configuration allowing decrease in number of manufacturing steps, and a method of manufacturing the thin film transistor, and a display device having the thin film transistor. The thin film transistor includes: a gate electrode; an oxide semiconductor film having a multilayer structure of an amorphous film and a crystallized film; and a source electrode and a drain electrode provided to contact the crystallized film. | 09-08-2011 |
20110240998 | THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE - A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof. | 10-06-2011 |
20110248270 | THIN FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC UNIT - A thin film transistor using oxide semiconductor for a channel, which may be controlled such that threshold voltage is positive and may be improved in reliability is provided. The thin film transistor includes a gate electrode, a pair of source/drain electrodes, an oxide semiconductor layer forming a channel and provided between the gate electrode and the pair of source/drain electrodes, a first insulating film as a gate insulating film provided on the oxide semiconductor layer on a side near the gate electrode, and a second insulating film provided on the oxide semiconductor layer on a side near the pair of source/drain electrodes. One or both of the first insulating film and the second insulating film includes an aluminum oxide having a film density of 2.70 g/cm | 10-13-2011 |
20120001167 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - A thin film transistor allowed to suppress a failure caused by an interlayer insulating film and improve reliability of a self-alignment structure, and a display device including this thin film transistor are provided. The thin film transistor includes: a gate electrode; an oxide semiconductor film having a channel region facing the gate electrode, and having a source region on one side of the channel region, and a drain region on the other side of the channel region; an interlayer insulating film provided in contact with the oxide semiconductor film as well as having a connection hole, and including an organic resin film; and a source electrode and a drain electrode connected to the source region and the drain region, respectively, via the connection hole. | 01-05-2012 |
20120043548 | THIN FILM TRANSISTOR AND DISPLAY UNIT - A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same. The thin film transistor includes, sequentially over a substrate, a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer. | 02-23-2012 |
20120146039 | THIN FILM TRANSISTOR AND DISPLAY - A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer. | 06-14-2012 |
20120249904 | DISPLAY DEVICE AND ELECTRONIC UNIT - A display device includes a substrate, a display element, a transistor as a drive element of the display element, and a holding capacitance element holding electric charge corresponding to a video signal, and including a first conductive film, a first semiconductor layer including an oxide semiconductor, an insulating film, and a second conductive film in order of closeness to the substrate. The display element, the transistor, and the holding capacitance element are provided on the substrate. | 10-04-2012 |
20120249915 | DISPLAY DEVICE AND ELECTRONIC APPARATUS - A display device includes a substrate, a display element, a transistor as a drive element of the display element, and a holding capacitance element holding electric charge corresponding to a video signal. The display element, the transistor, and the holding capacitance element are provided on the substrate. The holding capacitance element includes a first semiconductor layer including an oxide semiconductor, a first conductive film provided on the first semiconductor layer, a first insulating film provided between the first semiconductor layer and the first conductive film, and a recess formed by removing part or all in thickness of the first conductive film and the first insulating film in a selective region on the first semiconductor layer. | 10-04-2012 |
20130056728 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film. | 03-07-2013 |
20130153893 | DISPLAY AND ELECTRONIC UNIT - A display device includes a display element, a transistor configured to drive the display element, the transistor including a channel region, and a retention capacitor. An oxide semiconductor film is provided in areas across the transistor and the retention capacitor, the oxide semiconductor film including a first region formed in the channel region of the transistor, and a second region having a lower resistance than that of the first region. The second region is formed in the areas of the transistor and retention capacitor other than in the channel region. | 06-20-2013 |
20130221358 | TRANSISTOR, METHOD OF MANUFACTURING THE TRANSISTOR, SEMICONDUCTOR UNIT, METHOD OF MANUFACTURING THE SEMICONDUCTOR UNIT, DISPLAY, AND ELECTRONIC APPARATUS - A method of manufacturing a transistor includes: forming an oxide semiconductor film and a gate electrode on a substrate, the oxide semiconductor film having a channel region, and the gate electrode facing the channel region; and forming an insulating film covering the gate electrode and the oxide semiconductor film. Infiltration of moisture from the insulating film into the oxide semiconductor film is suppressed by the substrate. | 08-29-2013 |
20130240878 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - A thin film transistor comprising: a substrate; a gate electrode on the substrate; a gate insulation film on the gate electrode; an oxide semiconductor layer on the gate insulation film; a channel protection film on the oxide semiconductor layer; source and drain electrodes on the channel protection film; and a passivation film on the source and drain electrodes, wherein, (a) each of the gate insulation film, and passivation film comprises a laminated structure and includes a first layer made of aluminum oxide and a second layer made of an insulation material including silicon, and (b) the passivation film covers edges of the oxide semiconductor layer. The transistor is capable of suppressing desorption of oxygen and from the oxide semiconductor layer and reducing the time for film formation thereof. | 09-19-2013 |
20140124781 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT - A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method. | 05-08-2014 |
20140291668 | SEMICONDUCTOR DEVICE, DISPLAY UNIT, AND ELECTRONIC APPARATUS - Provided is a semiconductor device that includes a transistor. The transistor includes: a gate electrode; an oxide semiconductor film facing the gate electrode and including a first overlapping region that is overlapped with the gate electrode; a low-resistance region provided in the oxide semiconductor film; and a first separation region provided between the low-resistance region and the first overlapping region. | 10-02-2014 |
20150048372 | TRANSISTOR, METHOD OF MANUFACTURING THE TRANSISTOR, SEMICONDUCTOR UNIT, METHOD OF MANUFACTURING THE SEMICONDUCTOR UNIT, DISPLAY, AND ELECTRONIC APPARATUS - A method of manufacturing a transistor includes: forming an oxide semiconductor film and a gate electrode on a substrate, the oxide semiconductor film having a channel region, and the gate electrode facing the channel region; and forming an insulating film covering the gate electrode and the oxide semiconductor film. Infiltration of moisture from the insulating film into the oxide semiconductor film is suppressed by the substrate. | 02-19-2015 |