Patent application number | Description | Published |
20090020742 | SOLID ELECTROLYTE SWITCHING ELEMENT, AND FABRICATION METHOD OF THE SOLID ELECTROLYTE ELEMENT, AND INTEGRATED CIRCUIT - The switching element of the present invention is of a configuration that includes: a first electrode ( | 01-22-2009 |
20090309186 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - A semiconductor device is produced by fabricating a capacitor element including a lower electrode, a capacitor insulating film, and an upper electrode, and a thin-film resistor element, in the same step. As the lower electrode of the capacitor element is lined with a lower layer wiring layer (Cu wiring), the lower electrode has extremely low resistance substantially. As such, even if the film thickness of the lower electrode becomes thinner, parasitic resistance does not increased. The resistor element is formed to have the same film thickness as that of the lower electrode of the capacitor element. Since the film thickness of the lower electrode is thin, it works as a resistor having high resistance. In the top layer of the passive element, a passive element cap insulating film is provided, which works as an etching stop layer when etching a contact of the upper electrode of the capacitor element. | 12-17-2009 |
20100006976 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - This invention provides a semiconductor device having a capacitor with reduced deterioration of dielectric constant and reduced leakage between upper and lower electrodes and a manufacturing method of such a semiconductor device. A capacity structure is configured by sequentially stacking a lower electrode, a capacitive insulation film, and an upper electrode on wiring or a contact plug. The capacity structure is of a thin-film capacitor structure having, at the interface between the lower electrode and the capacitive insulation film, a thin metal film having insulating properties and exhibiting a high dielectric constant. | 01-14-2010 |
20100244972 | OSCILLATOR CIRCUIT - A first wiring layer and a plurality of second wiring layers having a thickness smaller than the first wiring layer are stacked on the semiconductor substrate. An oscillator circuit has an inductor formed by the plurality of second wiring layers. The inductor oscillates at a frequency at which the inductor and a parasitic capacitance of an inverter circuit resonate. A drain of an n-type MISFET and a drain of a p-type MISFET of the inverter circuit are connected to each other, and an output of the inductor is connected to a connection point of those drains. | 09-30-2010 |
20100327409 | SEMICONDUCTOR DEVICE COMPRISING CAPACITIVE ELEMENT - A capacitive element formed within a semiconductor device comprises an upper electrode, a capacitive insulating film containing an oxide and/or silicate of a transition metal element, and a lower electrode having a polycrystalline conductive film composed of a material having higher oxidation resistance than the transition metal element and an amorphous or microcrystalline conductive film formed below the polycrystalline conductive film. | 12-30-2010 |
20140281033 | INFORMATION PROCESSING APPARATUS, RELAY METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - An information processing apparatus includes a receiving unit configured to receive request data to an application via a global network allocated to the information processing apparatus, the request data including a global address specified as a destination address; a determination unit configured to determine, based on the request data, whether the application is to be executed by another apparatus connected via a private network and allocated with a private address; a change unit configured to change the destination address in the request data from the global address of the information processing apparatus to the private address of the another apparatus when the determination unit determines that the application is to be executed by the another apparatus; and a transmission unit configured to transfer, to the another apparatus, the request data including the private address of the another apparatus as the destination address. | 09-18-2014 |
20150024593 | SEMICONDUCTOR DEVICE COMPRISING CAPACITIVE ELEMENT - A semiconductor device production method includes forming a transition metal film, irradiating a surface of the transition metal film with a mono-silane gas to form a silicon-containing transition metal film, and oxidizing the silicon-containing transition metal film by an oxygen plasma treatment, thereby forming a transition metal silicate film. | 01-22-2015 |
20150349134 | SEMICONDUCTOR DEVICE - There is provided a readily manufacturable semiconductor device including two transistors having mutually different characteristics. The semiconductor device includes a substrate, a multilayer wiring layer disposed over the substrate, a first transistor disposed in the multilayer wiring layer, and a second transistor disposed in a layer different from a layer including the first transistor disposed therein of the multilayer wiring layer, and having different characteristics from those of the first transistor. This can provide a readily manufacturable semiconductor device including two transistors having mutually different characteristics. | 12-03-2015 |