Patent application number | Description | Published |
20090096091 | SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - A semiconductor device manufacturing apparatus is provided with a drawing pattern printing part having a print head which injects a conductive solvent, an insulative solvent and an interface treatment solution. The print head is formed in such a way that desired circuit drawing pattern can be printed on a wafer based on information on the drawing pattern from a wafer testing part, information on the wafer from a storage part and coordinate information from a chip coordinate recognition part. In a semiconductor device manufacturing method according to the present invention, a semiconductor device is manufactured by using the semiconductor device manufacturing apparatus in such a manner that desired circuits are formed through printing process. In the semiconductor device, pad electrodes and so on are formed in such a way that trimming process can be conducted by printing circuit drawing patterns. | 04-16-2009 |
20100004425 | SOURCE MATERIAL FOR PREPARING LOW DIELECTRIC CONSTANT MATERIAL - A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): | 01-07-2010 |
20100072535 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device includes a source region and a drain region provided apart from each other in a semiconductor substrate, a first insulating film provided on a channel region between the source region and the drain region, a charge storage layer provided on the first insulating film, a second insulating film provided on the charge storage layer and including a stacked structure of a lanthanum aluminum silicate film and a dielectric film made of silicon oxide or silicon oxynitride, and a control gate electrode provided on the second insulating film. | 03-25-2010 |
20100164072 | PLASMA CVD APPARATUS, METHOD FOR FORMING THIN FILM AND SEMICONDUCTOR DEVICE - A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured. | 07-01-2010 |
20100181654 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, INSULATING FILM FOR SEMICONDUCTOR DEVICE, AND MANUFACTURING APPARATUS OF THE SAME - An object to provide an insulating film for a semiconductor device, which has characteristics of low permittivity, a low leak current, and high mechanical strength, undergoes small time-dependent change of these characteristics, and has excellent water resistance, and to provide a manufacturing apparatus of the same, and a manufacturing method of the semiconductor device using the insulating film. The production process comprises a film forming step of supplying a mixed gas containing a carrier gas and a raw material gas, which is a gasified material having borazine skeletal molecules, into a chamber, causing the mixed gas to be in a plasma state, applying a bias to the substrate placed in the chamber, and carrying out gas-phase polymerization by using the borazine skeletal molecule as a fundamental unit so as to form the insulating film on the substrate; and a reaction promoting step of, after the film forming step, bringing the bias applied to the substrate to a different magnitude from the bias in the film forming step, supplying the mixed gas while gradually reducing only the raw material gas, which is the gasified material having the borazine skeletal molecules, treating the insulating film with a plasma mainly comprising the carrier gas. | 07-22-2010 |
20110254049 | SEMICONDUCTOR DEVICE - A semiconductor device manufacturing apparatus is provided with a drawing pattern printing part having a print head which injects a conductive solvent, an insulative solvent and an interface treatment solution. The print head is formed in such a way that desired circuit drawing pattern can be printed on a wafer based on information on the drawing pattern from a wafer testing part, information on the wafer from a storage part and coordinate information from a chip coordinate recognition part. In a semiconductor device manufacturing method according to the present invention, a semiconductor device is manufactured by using the semiconductor device manufacturing apparatus in such a manner that desired circuits are formed through printing process. In the semiconductor device, pad electrodes and so on are formed in such a way that trimming process can be conducted by printing circuit drawing patterns. | 10-20-2011 |
20130056791 | SEMICONDUCTOR DEVICE - A semiconductor device manufacturing apparatus is provided with a drawing pattern printing part having a print head which injects a conductive solvent, an insulative solvent and an interface treatment solution. The print head is formed in such a way that desired circuit drawing pattern can be printed on a wafer based on information on the drawing pattern from a wafer testing part, information on the wafer from a storage part and coordinate information from a chip coordinate recognition part. In a semiconductor device manufacturing method according to the present invention, a semiconductor device is manufactured by using the semiconductor device manufacturing apparatus in such a manner that desired circuits are formed through printing process. In the semiconductor device, pad electrodes and so on are formed in such a way that trimming process can be conducted by printing circuit drawing patterns. | 03-07-2013 |
Patent application number | Description | Published |
20090232987 | Composition for Chemical Vapor Deposition Film-Formation and Method for Production of Low Dielectric Constant Film - The present invention provides a composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, R | 09-17-2009 |
20100112805 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer. | 05-06-2010 |
20130160711 | PLASMA CVD APPARATUS, METHOD FOR FORMING THIN FILM AND SEMICONDUCTOR DEVICE - A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured. | 06-27-2013 |
Patent application number | Description | Published |
20100080062 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME - A nonvolatile semiconductor memory device includes: a semiconductor substrate including a first channel, and a source region and a drain region provided on both sides of the first channel; a first insulating film provided on the first channel; a charge retention layer provided on the first insulating film; a second insulating film provided on the charge retention layer; and a semiconductor layer including a second channel provided on the second insulating film, and a source region and a drain region provided on both sides of the second channel. | 04-01-2010 |
20100080065 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME - A nonvolatile semiconductor memory device includes a memory cell and a driving unit. The a memory cell has a semiconductor layer having, a channel, and a source region and a drain region provided on both sides of the channel; a first insulating film provided on the channel; a charge retention layer provided on the first insulating film; and a gate electrode provided on the charge retention layer. The driving unit applies a burst signal having a constant amplitude and a constant frequency between the gate electrode and the semiconductor layer and performs at least one of operations of programming and erasing charge on the charge retention layer. | 04-01-2010 |
20120068159 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a nonvolatile semiconductor memory device includes a first memory portion. The first memory portion includes a first base semiconductor layer, a first electrode, a first channel semiconductor layer, a first base tunnel insulating film, a first channel tunnel insulating, a first charge retention layer and a first block insulating film. The first channel semiconductor layer is provided between the first base semiconductor layer and the first electrode, and includes a first channel portion. The first base tunnel insulating film is provided between the first base semiconductor layer and the first channel semiconductor layer. The first channel tunnel insulating film is provided between the first electrode and the first channel portion. The first charge retention layer is provided between the first electrode and the first channel tunnel insulating film. The first block insulating film is provided between the first electrode and the first charge retention layer. | 03-22-2012 |
20120069679 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a memory string including a plurality of memory cells and, a driving unit. In sequentially reading data stored in the memory cells by applying a first signal to the memory cells, a second signal is applied to a second cell. The driving unit applies a third signal to the gate electrodes of all the memory cells prior to the sequential reading. The third signal has a voltage smaller than the second signal and time duration equal to or more than that of a sum of time duration during which the first signal is applied to all the memory cells. In a period prior to the third signal application, the driving unit performs at least one of applying a fourth signal to the gate electrodes and matching a potential of the gate electrodes with that of the semiconductor layer. | 03-22-2012 |
20120075928 | SEMICONDUCTOR MEMORY DEVICE - In a semiconductor layer, information is written by applying a first potential to a first electrode, applying a second potential that is lower than the first potential to all of back gate electrodes, applying a third potential that is higher than the first potential to the first to (i−1) | 03-29-2012 |
20130135938 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a memory string including a plurality of memory cells and, a driving unit. In sequentially reading data stored in the memory cells by applying a first signal to the memory cells, a second signal is applied to a second cell. The driving unit applies a third signal to the gate electrodes of all the memory cells prior to the sequential reading. The third signal has a voltage smaller than the second signal and time duration equal to or more than that of a sum of time duration during which the first signal is applied to all the memory cells. In a period prior to the third signal application, the driving unit performs at least one of applying a fourth signal to the gate electrodes and matching is a potential of the gate electrodes with that of the semiconductor layer. | 05-30-2013 |
20130221423 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes an underlayer and a stacked body. The stacked body includes control gate layers and insulating layers. The device includes a channel body layer penetrating through the stacked body, and the control gate layers and the insulating layers are stacked in the stacking direction, a floating gate layer provided between each of the plurality of control gate layers and the channel body layer. The device includes a block insulating layer provided between each of the plurality of control gate layers and the floating gate layer, and includes a tunnel insulating layer provided between the channel body layer and the floating gate layer. A length of a boundary between the floating gate layer and the block insulating layer is shorter than a length of a boundary between the floating gate layer and the tunnel insulating layer. | 08-29-2013 |
20130228928 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor device includes a stacked body, a second conductive layer, a second insulating layer, a tubular semiconductor pillar, an insulating film and an occlusion film. The second conductive layer is provided on the stacked body. The second insulating layer is provided on the second conductive layer. The tubular semiconductor pillar is provided in such a manner as to pass through the second insulating layer, the second conductive layer and the stacked body. The insulating film is provided between the semiconductor pillar, and the second insulating layer, the second conductive layer and the stacked body. The occlusion film occludes the tube in a lower portion of the portion passing through the second insulating layer in the semiconductor pillar. The tube below the occlusion film in the semiconductor pillar is an air gap. | 09-05-2013 |
20130234222 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a substrate, a structure body, a semiconductor layer, and a memory film. The memory film is provided between the semiconductor layer and the plurality of electrode films. The memory film includes a charge storage film, a block film, and a tunnel film. The block film is provided between the charge storage film and the plurality of electrode films. The tunnel film is provided between the charge storage film and the semiconductor layer. The tunnel film includes a first film containing silicon oxide, a second film containing silicon oxide, and a third film provided between the first film and the second film and containing silicon oxynitride. When a composition of the silicon oxynitride contained in the third film is expressed by a ratio x of silicon oxide and a ratio (1−x) of silicon nitride, 0.5≦x<1 holdes. | 09-12-2013 |
Patent application number | Description | Published |
20130320425 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a nonvolatile semiconductor memory device comprises a semiconductor substrate, conductive layers and insulating layers alternately stacked above the semiconductor substrate, a block insulating layer which is formed on an inner surface of a hole formed in the conductive layers and the insulating layers and extending in a stacking direction, a charge storage layer formed on the block insulating layer, a tunnel insulating layer formed on the charge storage layer, and a semiconductor layer formed on the tunnel insulating layer. Letting R | 12-05-2013 |
20140029343 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a nonvolatile semiconductor memory device comprises a memory cell array including memory cell transistors configured to store information in accordance with n (n is an integer larger than 2) threshold voltage levels, and a control circuit configured to control the memory cell array. In a write operation, the control circuit shifts a threshold voltage level of a write target memory cell transistor to a base threshold level of the n threshold levels, except for a threshold level having a highest voltage and a threshold level having a lowest voltage. Then the control circuit shifts the threshold voltage level of the write target memory cell transistor from the base threshold level to one of the n threshold levels. | 01-30-2014 |
20140264547 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device comprises a semiconductor substrate, a first layer, a first conductive layer, a second conductive layer, an insulating layer, a block insulating layer formed on an inner surface of a pair of through holes formed in the insulating layer, the second conductive layer, and the first conductive layer, and on an inner surface of a connecting hole formed in the first layer and configured, a charge storage layer formed on the block insulating layer, a tunnel insulating layer formed on the charge storage layer, and a semiconductor pillar formed on the tunnel insulating layer. The semiconductor pillar includes a doped silicide layer which is formed in the insulating layer, a silicon layer formed in the second conductive layer and the first conductive layer, and a silicide layer formed in first layer. | 09-18-2014 |
20140286098 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device according to an embodiment includes a memory string having a plurality of electrically rewritable memory transistors connected in series therein. The memory string includes a first semiconductor layer including a columnar portion extending in a perpendicular direction to a substrate; a tunnel insulating film formed surrounding a side surface of the columnar portion; a charge storage film formed surrounding the tunnel insulating film; a block insulating film formed surrounding the charge storage film; and a plurality of first conductive layers formed surrounding the block insulating film and disposed with a certain spacing along the perpendicular direction. The charge storage film includes a first charge storage film having a conducting property and located in contact with the tunnel insulating film; and a second charge storage film having an insulating property and formed between the first charge storage film and the block insulating film. | 09-25-2014 |
20140362643 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A nonvolatile semiconductor memory device according to an embodiment includes a memory cell array having a plurality of electrically rewritable memory transistors arranged therein; and a control unit configured to govern control that repeats a voltage application operation and a step-up operation, the voltage application operation applying an applied voltage to a selected memory transistor to change a threshold voltage at which the selected memory transistor is conductive, and the step-up operation, in the case where a threshold voltage of the selected memory transistor has not changed to a desired value, raising the applied voltage by an amount of a certain step-up value. The control unit is configured to control the step-up operation to monotonically decrease the step-up value as the number of times of the voltage application operations increases. | 12-11-2014 |
Patent application number | Description | Published |
20150227826 | PRINT INSTRUCTION APPARATUS, PRINTER, PRINTING SYSTEM, PRINT INSTRUCTION METHOD, AND NON-TRANSITORY COMPUTER READABLE MEDIUM - A print instruction apparatus includes a group information acquisition unit that acquires information identifying a feeder unit included in a group including two or more feeder units, from among a plurality of feeder units mounted on a printer to feed paper sheets, where if one feeder unit in the group runs out of paper sheets during printing, another feeder unit in the same group is configured to feed paper sheets, and a display that acquires information related to a remaining amount of paper sheets each of the feeder units in the group, and displays information related to a total remaining amount of paper sheets in the group. | 08-13-2015 |
20150254541 | PRINT INSTRUCTION APPARATUS, PRINTING SYSTEM, PRINT INSTRUCTION METHOD, AND NON-TRANSITORY COMPUTER READABLE MEDIUM - A print instruction apparatus includes a group information acquisition unit that acquires information identifying a feeder unit included in a group that includes two or more feeder units, from among feeder units arranged in a printer to feed paper sheets, and that is configured in a manner such that if one of the feeder units in the group runs out of paper sheets in a printing of the printer, another feeder unit in the group starts to feed paper sheets, and a display that acquires information related to a remaining amount of paper sheets or information related to an out-of-paper state in each of the feeder units in the group that is configured to feed paper sheets in the printing operation, and that displays information related to a feeder unit in the group that is to be replenished with paper sheets. | 09-10-2015 |