Patent application number | Description | Published |
20080224147 | THIN FILM TRANSISTOR, DISPLAY DEVICE USING THEREOF AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR AND THE DISPLAY DEVICE - A thin film transistor includes a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer including a channel region formed over the gate electrode, a source electrode and a drain electrode including a region connected to the semiconductor layer, where at least a part of the region is overlapped with the gate electrode, an upper insulating film formed to cover the semiconductor layer, the source electrode and the drain electrode, where the upper insulating film is directly in contact with the channel region of the semiconductor layer and discharges moisture by a heat treatment and a second upper insulating film formed to cover the first protective film and suppress moisture out-diffusion. | 09-18-2008 |
20090159884 | THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE - A method of manufacturing a thin-film transistor according to an embodiment of the present invention includes the step of forming a gate insulator on a gate electrode. The gate insulator includes at least a first region being in contact with a hydrogenated amorphous silicon film, and a second region positioned below the first region. The first and second regions are deposited using a source gas including NH | 06-25-2009 |
20090161048 | LIQUID CRYSTAL DISPLAY - In a liquid crystal display ( | 06-25-2009 |
20090290113 | DISPLAY DEVICE AND METHOD OF PRODUCING THE SAME - The display device includes a pair of insulating substrates arranged so as to be opposed, a bonding layer, and a strain suppressing plate. The bonding layer is provided on the outer surface side of one insulating substrate. The strain suppressing plate has rigidity higher than that of the insulating substrate to suppress the strain caused by curving the insulating substrate. The strain suppressing plate is fixed to the insulating substrate by the bonding layer. | 11-26-2009 |
20100053759 | ANTIREFLECTION COATING AND DISPLAY DEVICE - An antireflection coating is formed on a transparent substrate and includes an Al film having a transmittance of lower than 10% at a wavelength of 550 nm with a thickness of 25 nm and predominantly composed of aluminum (Al), and an Al—N film formed in at least one of an upper layer and a lower layer of the Al film, having a transmittance of equal to or higher than 10% at a wavelength of 550 nm with a thickness of 25 nm, predominantly composed of Al and at least containing a nitrogen (N) element as an additive. A specific resistance of the antireflection coating is equal to or lower than 1.0×10 | 03-04-2010 |
20100060602 | TOUCH SCREEN, TOUCH PANEL AND DISPLAY DEVICE - Each detection column wiring is constituted by a set of a first metal wiring having a zigzag pattern and a second metal wiring having a structure axisymmetric with the first metal wiring about a column direction as an axis, wherein the first metal wiring is constituted by first sloped portions which are obliquely sloped by an inclination angle of 45 degrees with respect to the column direction, and first parallel portions which are parallel with the column direction and are continuous with the first sloped portions, such that the first sloped portions and the first parallel portions are repeatedly placed in a zigzag shape along the column direction. Each detection row wiring also has the same structure. A sloped portion out of the first sloped portions of the first metal wiring is always orthogonally and spatially intersected, at its middle point, with a sloped portion out of the second sloped portions of the third metal wiring at its middle point. There is also the same orthogonal relationship among the other portions. | 03-11-2010 |
20100078816 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole. | 04-01-2010 |
20100112790 | METHOD OF MANUFACTURING SEMICONDUCTOR THIN FILM AND SEMICONDUCTOR DEVICE - On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive. | 05-06-2010 |
20100253647 | TOUCH PANEL AND DISPLAY DEVICE COMPRISING THE SAME - A touch panel capable of calculating touch position coordinates of an indicator with high accuracy in a desired detection time even if a large number of detection wire groups are provided. An oscillator circuit selects one of detection wires selected by a circuit or the like according to a command from a detection control circuit and oscillates. A circuit counts an output signal from the oscillator circuit up to a first count value. A circuit measures a period of the count. A circuit determines that there is a touch when it detects the detection wire of which the measured period is equal to or higher than a threshold value and sends the detection wire giving a maximum value equal to or higher than the threshold value to a circuit as a touch detection wire. The circuit causes the circuit or the like to select the touch detection wire and the detection wires adjacent thereto on both sides, the circuit counts up until the count value becomes a second count value larger than the first count value, and the circuit measures the count period. The circuit performs interpolation on the basis of the count value obtained by subtracting a background capacitance value from a measured value obtained by the circuit, to thereby determine the touch coordinates. | 10-07-2010 |
20110198606 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film. | 08-18-2011 |
20120020056 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME - A display device where concentration of a stress in a display panel is suppressed, to allow improvement in display quality, reliability and the like. A display device includes a display panel, an adhesive layer and a supporting substrate. The adhesive layer is provided on the display panel. The supporting substrate is made up of a member previously provided with curved surfaces. The display panel is bonded onto the curved surface of the supporting substrate by the adhesive layer. The supporting substrate supports the display panel in a curved form along the curved surface. | 01-26-2012 |
20120112194 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes. | 05-10-2012 |
20120293457 | TOUCH SCREEN, TOUCH PANEL AND DISPLAY DEVICE - A detection column wiring includes a set of a first metal wiring having a zigzag pattern and a second metal wiring having a structure axisymmetric with the first metal wiring about a column direction. The first metal wiring includes first sloped portions obliquely sloped by an inclination angle of 45° with respect to the column direction, and first parallel portions parallel with the column direction and continuous with the first sloped portions; the first sloped portions and the first parallel portions being repeatedly placed in a zigzag shape along the column direction. Each detection row wiring has the same structure. A sloped portion of the first sloped portions of the first metal wiring is always orthogonally and spatially intersected, at its middle point, with a sloped portion of the second sloped portions of the third metal wiring at its middle point. Other portions have the same orthogonal relationship. | 11-22-2012 |
20130194232 | TOUCH SCREEN, TOUCH PANEL, AND DISPLAY DEVICE INCLUDING THE SAME - In a touch screen, the number of dummy column block region patterns is made smaller than the number of plurality of detection block region patterns. The plurality of detection block region pattern are obtained as a result of dividing a crossing region where a column direction wire bunch and a row direction wire bunch cross each other. The dummy column block region patterns are obtained as a result of dividing a crossing region where a dummy column direction wire bunch and a row direction wire bunch cross each other. | 08-01-2013 |
20140152916 | TOUCHSCREEN - A touchscreen of the present invention is covered by wiring patterns of a row-directional line and a column-directional line being upper and lower two layers. A step height that is produced by an upper electrode riding on a lower electrode when a floating electrode is provided at a region adjacent to the row-directional line and the column-directional line is suppressed. | 06-05-2014 |