Patent application number | Description | Published |
20110048642 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape. | 03-03-2011 |
20120190208 | PLASMA TREATMENT DEVICE AND PLASMA TREATMENT METHOD - Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved. | 07-26-2012 |
20140080311 | PLASMA PROCESSING METHOD - A plasma processing method includes holding a target substrate on a holding table installed in a processing chamber; generating a microwave for plasma excitation; supplying a reactant gas having dissociation property; generating an electric field by introducing the microwave via a dielectric plate disposed to face the holding table; setting a distance between the holding table and the dielectric plate is set to a first distance based on periodicity of a standing wave formed in the dielectric plate by the introduction of the microwave, and generating plasma in the processing chamber in a state where the electric field is generated in the processing chamber; and after the generating of the plasma, setting the distance to a second distance shorter than the first distance by moving the holding table up and down, and performing the plasma process on the target substrate. | 03-20-2014 |
20140262025 | PLASMA PROCESSING APPARATUS AND PLASMA ETCHING APPARATUS - Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved. | 09-18-2014 |
20140338602 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape. | 11-20-2014 |
Patent application number | Description | Published |
20090211708 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus | 08-27-2009 |
20090215274 | Plasma processing apparatus and plasma processing method - The plasma processing apparatus includes a holding table disposed in a processing chamber, for holding thereon a target substrate; a dielectric plate disposed at a position facing the holding table, for introducing a microwave into the processing chamber; a plasma igniting unit for carrying out plasma ignition in a state in which an electric field is generated inside the processing chamber by the introduced microwave, thereby generating the plasma inside the processing chamber; and a control unit, which includes an elevating mechanism, for performing control operations to alter a distance between the holding table and the dielectric plate to a first distance, to drive the plasma igniting unit, to alter the distance between the holding table and the dielectric plate to a second distance different from the first distance, and to carry out the plasma process on the semiconductor substrate. | 08-27-2009 |
20090250790 | NITRIDE SEMICONDUCTOR WAFER AND METHOD OF PROCESSING NITRIDE SEMICONDUCTOR WAFER - Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain. Current GaN wafers have roughened bottom surfaces, which induce contamination of particles and fluctuation of thickness. | 10-08-2009 |
20100270649 | NITRIDE SEMICONDUCTOR WAFER - A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer. | 10-28-2010 |
20100279440 | NITRIDE SEMICONDUCTOR WAFER AND METHOD OF PROCESSING NITRIDE SEMICONDUCTOR WAFER - Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain. Current GaN wafers have roughened bottom surfaces, which induce contamination of particles and fluctuation of thickness. | 11-04-2010 |
20110039417 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A dielectric board ( | 02-17-2011 |
20110049679 | METHOD OF PROCESSING OF NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR WAFER, METHOD OF PRODUCING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer. | 03-03-2011 |
20110163326 | SUBSTRATE, EPITAXIAL LAYER PROVIDED SUBSTRATE, METHOD FOR PRODUCING SUBSTRATE, AND METHOD FOR PRODUCING EPITAXIAL LAYER PROVIDED SUBSTRATE - The present invention provides a substrate formed at a low cost and having a controlled plate shape, an epitaxial layer provided substrate obtained by forming an epitaxial layer on the substrate, and methods for producing them. The method for producing the substrate according to the present invention includes an ingot growing step serving as a step of preparing an ingot formed of gallium nitride (GaN); and a slicing step serving as a step of obtaining a substrate formed of gallium nitride, by slicing the ingot. In the slicing step, the substrate thus obtained by the slicing has a main surface with an arithmetic mean roughness Ra of not less than 0.05 μm and not more than 1 μm on a line of 10 mm. | 07-07-2011 |
20110240598 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus | 10-06-2011 |
20120012556 | PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD - A plasma etching apparatus | 01-19-2012 |
20120043645 | METHOD OF PROCESSING OF NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR WAFER, METHOD OF PRODUCING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer. | 02-23-2012 |
20120184108 | METHOD OF PROCESSING OF NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR WAFER, METHOD OF PRODUCING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer. | 07-19-2012 |
Patent application number | Description | Published |
20080284448 | TEST APPARATUS AND PIN ELECTRONICS CARD - Provided is a test apparatus that tests a DUT, which includes a driver that outputs a test signal to the DUT, a first transmission path that electrically connects the driver and the DUT, a first FET switch provided on the first transmission path to connect or disconnect the driver and the DUT to or from each other, and a capacitance compensator that detects an output signal from the DUT, and charges or discharges a capacitive component of the first FET switch based on the detected output signal. | 11-20-2008 |
20080308396 | SWITCH MECHANISM USABLE UNDERWATER - The present invention provides a switch mechanism usable underwater including a rear cover serving as an exterior member, two shaft members being displaceable in a shaft direction and fitting into two shaft holes having the same cross-sectional area provided in the rear cover, an O-ring watertightly maintaining the shaft member and the shaft hole, and a lever member being engaged with the two shaft members in a manner to be capable of pressing-down or pulling-up the shaft member, and being configured to balance water pressure applied to one shaft member with that applied to the other shaft member. | 12-18-2008 |
20090014297 | SWITCH MECHANISM USABLE UNDERWATER - A switch mechanism usable underwater including a cover serving as an exterior member, a shaft member displaceable in a longitudinal direction and fitted into a shaft hole having substantially the same cross-sectional area provided in the cover, an O-ring maintaining a water-tight sliding seal between the shaft member and the shaft hole, and a lever member movable about an axis for moving the shaft member by application of a pressing force applied to the lever member in a first direction against a force of a bias member, the pressing force being applied at a first point which is a first distance from said axis, the lever member engaging the shaft at a second point a second distance from said axis which is less than said first distance to move the lever member in a second direction opposite said first direction when the pressing force is removed. | 01-15-2009 |
20090146677 | TEST APPARATUS AND PIN ELECTRONICS CARD - There is provided a test apparatus including a driver that outputs a test signal to a device under test, a first switch that switches whether to connect the driver to the device under test, a comparator that receives an output signal from the device under test via the first switch, and compares a voltage of the output signal with a predetermined reference voltage, a reference voltage input section that inputs the reference voltage into the comparator, a second switch that is provided between the reference voltage input section and the comparator, and a dummy resistance that is connected at one end thereof to a connection point between the comparator and the second switch and at the other end thereof to a predetermined potential. Here, a resistance ratio between an output resistance of the driver and an on-resistance of the first switch is substantially equal to a resistance ratio between the dummy resistance and an on-resistance of the second switch. | 06-11-2009 |
20100060325 | Driver circuit - A driver circuit includes a main driver which receives an input signal and outputs a first signal corresponding to the input signal, a sub driver which receives the input signal and outputs a non-inverted signal and an inverted signal corresponding to the input signal, a differentiating circuit including resistors and a variable capacity condenser, which outputs signals by differentiating the non-inverted signal and the inverted signal, respectively, and an addition unit which outputs a high frequency emphasized signal given by adding the output signal of the main driver and the signal given by differentiating the non-inverted signal, or a low frequency emphasized signal given by adding the output signal of the main driver and the signal given by differentiating the inverted signal. | 03-11-2010 |
20100109788 | Driver circuit - In a driver circuit | 05-06-2010 |
20110043250 | DRIVER CIRCUIT - A level switch circuit receives a digital input signal, and generates a level signal having a voltage level that corresponds to the value of the input signal thus received. A buffer circuit receives a level signal, and outputs the level signal via an output terminal thereof. A bias current generating circuit generates a bias current including a DC component having a constant level and a variable component that changes according to the input signal, and supplies the bias current thus generated to a buffer circuit. The bias current generating circuit detects an edge of the input signal, and raises the bias current by a predetermined amount for a predetermined period of time after the edge thus detected. | 02-24-2011 |
20140079377 | LIQUID HEATER - The invention is directed to a liquid heater for rapidly heating a liquid without overheating the liquid. The liquid heater comprises a liquid flow channel having a passage through which liquid flows, a heating part disposed outside the liquid flow channel, a heat reflecting part facing a heat radiating side of the heating part, and a cooling part through which a cooling medium flows adjacent a reverse side of a reflecting surface of the heat reflecting part for cooling the heat reflecting part. Radiant heat not absorbed in the liquid is reflected by the heat reflecting part. The heat reflecting part reflects radiant heat cooled by the cooling part so that the body of the liquid heater and peripheral members are maintained at a temperature not higher than a predetermined temperature to prevent overheating the liquid. | 03-20-2014 |
20160054539 | LENS BARREL - A lens barrel of the invention is configured with a first barrel member, a second barrel member which rotates around an outer periphery of the first barrel member and which has a through hole between an outer peripheral surface and an inner peripheral surface, and a moisture permeable member provided so as to cover the through hole of the second barrel member. | 02-25-2016 |
Patent application number | Description | Published |
20100300357 | SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured to generate plasma and to excite the first reactive gas, a first gas ejection port installed in a side wall of the first plasma generation chamber to eject an active species toward the substrate, a second plasma generation chamber in the process chamber, a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber, a pair of second discharge electrodes configured to generate plasma and to excite the second reactive gas, and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject an active species. | 12-02-2010 |
20150140839 | SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured to generate plasma and to excite the first reactive gas, a first gas ejection port installed in a side wall of the first plasma generation chamber to eject an active species toward the substrate, a second plasma generation chamber in the process chamber, a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber, a pair of second discharge electrodes configured to generate plasma and to excite the second reactive gas, and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject an active species. | 05-21-2015 |
Patent application number | Description | Published |
20100190448 | Compensation circuit and test apparatus - Provided is a correction circuit for generating an output signal emphasizing a predetermined signal component of a supplied input signal, including: a first detection section that detects a waveform of the input signal; an amplifying section that amplifies the waveform detected by the first detection section; a correction signal generating section that generates a correction signal by extracting an alternate current component from the waveform amplified by the amplifying section; and an output signal generating section that superimposes the correction signal on the waveform of the input signal, thereby generating the output signal. The first detection section detects the waveform of the input signal and an inverted waveform thereof, the amplifying section amplifies the waveform and the inverted waveform of the input signal, the correction signal generating section generates a correction signal and an inverted correction signal by extracting an alternate current component respectively of the waveform and the inverted waveform of the input signal amplified by the amplifying section, and the output signal generating section generates a pair of differential signals for the output signal, by superimposing the correction signal on the waveform of the input signal and superimposing the inverted correction signal on the inverted waveform of the input signal. | 07-29-2010 |
20100244880 | TEST APPARATUS AND DRIVER CIRCUIT - Provided is a test apparatus that tests a device under test, comprising a driver circuit that generates an output signal according to a prescribed input pattern, and supplies the output signal to the device under test; and a measuring section that measures a response signal output by the device under test to judge the acceptability of the device under test, wherein the driver circuit includes an input gate drive section that selects one of a plurality of input drive voltages supplied thereto, according to a logic value of the input pattern, and outputs the selected input drive voltage; a voltage switching section that includes a transistor and that outputs the output signal according to the drain voltage of the transistor, the transistor having a gate terminal that receives the input drive voltage output by the input gate drive section and a source terminal to which is applied a prescribed reference voltage; and an input drive voltage supplying section that generates the input drive voltages according to the reference voltage, and supplies the input drive voltages to the input gate drive section. | 09-30-2010 |
20100244884 | TEST APPARATUS AND DRIVER CIRCUIT - Provided is a test apparatus that tests a device under test, comprising a driver circuit that generates an output signal according to a prescribed input pattern and supplies the output signal to the device under test; and a measuring section that judges acceptability of the device under test by measuring a response signal output by the device under test. The driver circuit includes an input terminal that receives the input pattern; a switching section that operates according to a logic value of the input pattern to generate the output signal; and an emphasized component generating section that is provided between the input terminal and the switching section, and that (i) generates an emphasized component according to a prescribed high frequency component of the input pattern and (ii) superimposes the emphasized component onto a voltage supplied to the switching section. | 09-30-2010 |
20130106450 | DRIVE CIRCUIT AND TEST APPARATUS | 05-02-2013 |
Patent application number | Description | Published |
20100126668 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching. | 05-27-2010 |
20110214815 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching. | 09-08-2011 |
20110259524 | CAPACITIVE COUPLING PLASMA PROCESSING APPARATUS AND METHOD FOR USING THE SAME - A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode. | 10-27-2011 |
20110272097 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring. | 11-10-2011 |
20120145324 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching. | 06-14-2012 |
20130284371 | CAPACITIVE COUPLING PLASMA PROCESSING APPARATUS AND METHOD FOR USING THE SAME - A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode. | 10-31-2013 |
20140124139 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part. | 05-08-2014 |
20140326409 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching. | 11-06-2014 |
Patent application number | Description | Published |
20080236749 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member. | 10-02-2008 |
20090026170 | PLASMA PROCESSING APPARATUS AND METHOD OF PLASMA DISTRIBUTION CORRECTION - A plasma processing apparatus can prevent a sheath from becoming distorted, simplify a configuration of the apparatus, and prevent particles from attaching to a substrate. The plasma processing apparatus performs plasma processing on the substrate. A housing chamber houses the substrate. A mounting stage is disposed within the housing chamber and mounted with the substrate. An annular member is disposed in the mounting stage. A power supply unit supplies high-frequency power to the mounting stage. An observation unit optically observes the distribution of the plasma. A voltage applying unit applies a DC voltage to the annular member. A control unit sets the value of the DC voltage to be applied based on the observed plasma distribution. | 01-29-2009 |
20110114599 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a plurality of radio-frequency power supplies for supplying radio-frequency powers having frequencies different from each other, a common feeding line for superposing radio-frequency powers supplied respectively from the plurality of radio-frequency power supplies and feeding the superposed radio-frequency power to a same radio-frequency electrode, a radio-frequency power extracting device for extracting radio-frequency powers having predetermined frequencies from radio-frequency powers fed via the feeding line, and a radio-frequency voltage detector for measuring voltages of the radio-frequency powers having the predetermined frequencies extracted by the radio-frequency power extracting device. | 05-19-2011 |
20110198315 | PLASMA PROCESSING METHOD - A plasma processing method includes generating plasma in a processing chamber by supplying at least any of one or more electrodes provided in the processing chamber with a high-frequency power to process a substrate. The method includes applying the high-frequency power to at least any of the one or more electrodes, applying a direct-current voltage to at least any of the one or more electrodes, and previously adjusting the high-frequency power applied to the electrode at a timing when the apply of the direct-current voltage is started or terminated under a state in which the high-frequency power is applied to the electrode. | 08-18-2011 |
20130008609 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member. | 01-10-2013 |
Patent application number | Description | Published |
20110114261 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate to be processed, a holding stage which is disposed in the processing container and holds thereon the substrate to be processed, a dielectric plate which is provided at a location facing the holding stage and transmits a microwave into the processing container, and a reactive gas supply unit which supplies a reactive gas for plasma processing toward the central region of the substrate to be processed held by the holding stage. Here, the reactive gas supply unit includes an injector base, which is disposed at a location more recessed inside the dielectric plate than a wall surface of the dielectric plate facing the holding stage. A supply hole, which supplies a reactive gas for plasma processing into the processing container, is formed in the injector base. | 05-19-2011 |
20130008608 | PLASMA PROCESSING APPARATUS - The plasma processing apparatus includes a processing container, a gas supplying unit, an introducing unit, a holding member, and a focus ring. In a processing space defined by the processing container, plasma of a processing gas supplied from the gas supplying unit is generated by energy introduced from the introducing unit. The holding member for holding an object to be processed and a focus ring formed to surround a cross-section of the holding member are disposed in the processing space. A gap equal to or less than 350 μm is defined between the cross-section of the holding member and the focus ring. | 01-10-2013 |
20140299152 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a slot plate of an antenna and the slot plate has slots arranged in a circumferential direction thereof with respect to an axis line. A microwave is introduced into a processing space from the antenna via a dielectric window, and a through hole is formed in the dielectric window along the axis line. A plasma processing method performed in the plasma processing apparatus includes performing a first cleaning process by radiating the microwave from the antenna and supplying a cleaning gas from a cleaning gas supply system; and performing a second cleaning process by radiating the microwave from the antenna and supplying the cleaning gas from the cleaning gas supply system. A first pressure of the processing space in the performing of the first cleaning process is set to be lower than a second pressure thereof in the performing of the second cleaning process. | 10-09-2014 |
Patent application number | Description | Published |
20110126765 | PLASMA PROCESSING APPARATUS - A parallel resonance frequency can be adjusted in order to stably and securely block different high frequency noises flowing into a line such as a power feed line or a signal line from electric members including a high frequency electrode within a processing chamber. A filter | 06-02-2011 |
20120241090 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber; a gas supply unit for supplying a processing gas into the processing chamber; a microwave generator for generating microwave; an antenna for introducing the microwave for plasma excitation into the processing chamber; a coaxial waveguide provided between the microwave generator and the antenna; a holding unit, disposed to face the antenna in a direction of a central axis line of the coaxial waveguide, for holding a processing target substrate; a dielectric window, provided between the antenna and the holding unit, for transmitting the microwave from the antenna into the processing chamber; and a dielectric rod provided in a region between the holding unit and the dielectric window along the central axis line. | 09-27-2012 |
20120267048 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector. | 10-25-2012 |
20130008607 | ANTENNA, DIELECTRIC WINDOW, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - An antenna, a dielectric window, a plasma processing apparatus and a plasma processing method are capable of improving uniformity of a substrate surface processing amount in the surface of the substrate. The antenna includes the dielectric window | 01-10-2013 |
20130093321 | DIELECTRIC WINDOW FOR PLASMA PROCESSING APPARATUS, PLASMA PROCESSING APPARATUS AND METHOD FOR MOUNTING DIELECTRIC WINDOW FOR PLASMA PROCESSING APPARATUS - In a dielectric window | 04-18-2013 |
Patent application number | Description | Published |
20130115781 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a flow splitter for dividing a common gas into two common gas streams of common gas branch lines. A central introduction portion connected to one of the common gas branch lines supplies a common gas to a central portion of a substrate to be processed. A peripheral introducing portion connected to the other one of the common gas branch lines supplies the common gas to a peripheral portion of the substrate. The peripheral introducing portion has peripheral inlets arranged about a circumferential region above the substrate. An additive gas line is connected to an additive gas source to add an additive gas to at least one of the common gas branch lines. In addition, an electron temperature of a plasma in a region where the peripheral inlets are disposed is lower than that in a region where the introduction portion is disposed. | 05-09-2013 |
20140124478 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - The present disclosure provides a plasma processing apparatus, including: a processing chamber; an oscillator configured to output high-frequency power; a power supply unit configured to supply the high-frequency power from a specific plasma generating location into the processing chamber; a magnetic field forming unit provided outside the processing chamber and configured to forming a magnetic field at least at the specific plasma generating location; and a control unit configured to control the magnetic field formed by the magnetic field forming unit such that a relationship between an electron collision frequency fe of plasma generated in the processing chamber and a cyclotron frequency fc is fc>fe. | 05-08-2014 |
20140231016 | PLASMA PROCESSING APPARATUS - Disclosed is a plasma processing apparatus including a processing container that defines a processing space, a mounting table, and a microwave introducing antenna. The mounting table includes a mounting region where a workpiece accommodated in the processing container is mounted. The microwave introducing antenna includes a dielectric window installed above the mounting table. The dielectric window includes a bottom surface region that adjoins the processing space. The bottom surface region is configured in an annular shape so as to limit a region where a surface wave is propagated to a region above an edge of the mounting region. | 08-21-2014 |
20140302684 | ETCHING METHOD AND APPARATUS - An etching method and apparatus for etching a silicon oxide film selectively with respect to a silicon nitride film formed on a substrate are provided. A processing gas containing a plasma excitation gas and a CHF-based gas is introduced into a processing chamber such that a flow rate ratio of the CHF-based gas to the plasma excitation gas is 1/15 or higher. By generating a plasma in the processing chamber, the silicon oxide film is etched selectively with respect to the silicon nitride film formed on the substrate in the processing chamber. | 10-09-2014 |
20140312767 | DIELECTRIC WINDOW FOR PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE - A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess. | 10-23-2014 |
20150053346 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a flow splitter for dividing a common gas into two common gas streams of common gas branch lines. A central introduction portion connected to one of the common gas branch lines supplies a common gas to a central portion of a substrate to be processed. A peripheral introducing portion connected to the other one of the common gas branch lines supplies the common gas to a peripheral portion of the substrate. The peripheral introducing portion has peripheral inlets arranged about a circumferential region above the substrate. An additive gas line is connected to an additive gas source to add an additive gas to at least one of the common gas branch lines. In addition, an electron temperature of a plasma in a region where the peripheral inlets are disposed is lower than that in a region where the introduction portion is disposed. | 02-26-2015 |
20150064923 | PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD - A plasma processing device includes a processing chamber defining a plasma processing space and a stage for mounting thereon a target substrate in the processing chamber. The plasma processing device further includes a gas supply mechanism for introducing a processing gas into the plasma processing space, a plasma generation mechanism for supplying electromagnetic energy into the plasma processing space, and a control unit configured to, if a command to start a plasma process for the target substrate mounted on a substrate carry-in stage is issued, perform a warm-up process for supplying the processing gas into the plasma processing space by the gas supply mechanism and supplying the electromagnetic energy by the plasma generation mechanism in a state where no target substrate is mounted on the stage. | 03-05-2015 |
20150087162 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes: a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface which faces the processing space; a slot plate formed with a plurality of slots; and a heating member provided within the slot plate. The slot plate is provided on a surface of the dielectric at an opposite side to the opposing surface to radiate microwaves for plasma excitation to the processing space through the dielectric based on the microwaves generated by the microwave generator. | 03-26-2015 |
20150109716 | PLASMA PROCESSING APPARATUS, POWER SUPPLY UNIT AND MOUNTING TABLE SYSTEM - A plasma processing apparatus includes a mounting table including a lower electrode and an electrostatic chuck, a high frequency power supply electrically connected to the lower electrode, a heater provided in the electrostatic chuck, a heater power supply for supplying a power to the heater, a filter unit including a filter connected to the heater power supply, a rod-shaped power feeder connecting the heater power supply and the heater via the filter, an insulating tubular portion having an inner hole through which the power feeder extends, and a conductive choke portion serving to suppress a microwave propagating through the tubular portion. The choke portion includes a first portion extending from the power feeder in a direction intersecting with a longitudinal direction of the power feeder and a cylindrical second portion extending, between the tubular portion and the power feeder, from a peripheral portion of the first portion. | 04-23-2015 |
20150129134 | PLACEMENT TABLE AND PLASMA PROCESSING APPARATUS - A placement table includes: a base; an electrostatic chuck disposed on the base and including a placement surface on which a workpiece is placed; a plurality of heat generating members disposed at a side opposite to the placement surface of the electrostatic chuck; a power supply configured to generate a current for causing each of the plurality of heat generating members to generate heat; a plurality of electric wires installed to extend in a direction crossing the placement surface from the plurality of heat generating members, respectively, and configured to connect the power supply with the heat generating members, respectively; and a filter mounted on each of the plurality of electric wires to remove a high frequency component having a frequency higher than that of the current generated by the power supply. | 05-14-2015 |
20150155139 | DIELECTRIC WINDOW, ANTENNA AND PLASMA PROCESSING APPARATUS - A slot plate is provided at one surface of a dielectric window. The other surface of the dielectric window includes a flat surface surrounded by an annular first recess, and a plurality of second recesses formed at a bottom surface of the first recess. An antenna including the dielectric window and the slot plate provided at one surface of the dielectric window can be applied to the plasma processing apparatus. | 06-04-2015 |
20150206712 | ANTENNA AND PLASMA PROCESSING APPARATUS - An antenna includes a dielectric window and a slot plate provided at one surface of the dielectric window. The slot plate includes a plurality of slot pairs each being formed of two slots. The slot pairs are concentrically disposed about a centroid position of the slot plate and provided at positions where straight lines extending from the centroid position of the slot plate and passing through each slot pair are not overlapped with each other. | 07-23-2015 |
20150221482 | TEMPERATURE MEASURING METHOD AND PLASMA PROCESSING SYSTEM - A temperature measuring method for measuring a temperature of a member corresponding to a measuring object arranged within a chamber of a plasma processing apparatus is provided. The temperature measuring method involves obtaining a function (f) for correcting a correction target temperature (T | 08-06-2015 |
20150228459 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units. | 08-13-2015 |
20150294839 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Disclosed is a plasma processing apparatus including a processing container, a placing table, a central introduction section, and a peripheral introduction section. The central introduction section is provided above the placing table. The central introduction introduces a gas toward the placing table along the axis passing through a center of the placing table. The peripheral introduction section is provided between the central introduction section and a top surface of the placing table in a height direction. In addition, the peripheral introduction section is formed along a side wall. The peripheral introduction section provides a plurality of gas ejection ports arranged in a circumferential direction with respect to the axis. The plurality of gas ejection ports of the peripheral introduction section extend away from the placing table as the gas ejection ports come close to the axis. | 10-15-2015 |
20160118224 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion. | 04-28-2016 |
20160126114 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a table disposed in the processing chamber, a dielectric window provided at the processing chamber, and a surrounding body made of a dielectric material surrounding a processing space between the table and the dielectric window. The dielectric window and the surrounding body are separated from each other in a vertical direction with a predetermined gap therebetween. | 05-05-2016 |
Patent application number | Description | Published |
20140314121 | OPTICAL NON-DESTRUCTIVE INSPECTION APPARATUS AND OPTICAL NON-DESTRUCTIVE INSPECTION METHOD - There are provided an optical non-destructive inspection apparatus that can inspect a measurement object such as a wire bonding portion. The apparatus includes a focusing-collimating unit, a heating laser beam source, a heating laser beam guide unit, a first infrared detector, a second infrared detector, an emitted-infrared selective guide unit, and a control unit. The control unit controls the heating laser beam source, measures a temperature rise characteristic that is a temperature rise state of a measurement spot based on a heating time, on the basis of a ratio between a detected value from the first infrared detector and a detected value from the second infrared detector, determines a state of a measurement object based on the temperature rise characteristic, and changes at least one of wavelengths of infrared light beams guided to the first infrared detector and the second infrared detector based on a measured temperature during measurement. | 10-23-2014 |
20140321497 | OPTICAL NON-DESTRUCTIVE INSPECTION APPARATUS AND OPTICAL NON-DESTRUCTIVE INSPECTION METHOD - There are provided an optical non-destructive inspection apparatus and an optical non-destructive inspection method. The apparatus includes a focusing-collimating unit, a heating laser beam source, a heating laser beam guide unit, an infrared detector, an emitted-infrared guide unit, first and second correcting laser beam source, first and second correcting laser beam guide units, first and second correcting laser detectors, first and second reflected laser beam guide units, and a control unit. The control unit controls the heating laser beam source and the first and second correcting laser beam sources, measures a temperature rise characteristic that is a temperature rise state of a measurement spot based on a heating time, on the basis of a detection signal from the infrared detector and detection signals from the first and second correcting laser detectors, and determines a state of a measurement object based on the measured temperature rise characteristic. | 10-30-2014 |
20140321498 | OPTICAL NON-DESTRUCTIVE INSPECTION APPARATUS AND OPTICAL NON-DESTRUCTIVE INSPECTION METHOD - There are provided an optical non-destructive inspection apparatus and an optical non-destructive inspection method. The apparatus includes a focusing-collimating unit, a heating laser beam source, a heating laser beam guide unit, an infrared detector, an emitted-infrared guide unit, first and second correcting laser beam source, first and second correcting laser beam guide units, first and second correcting laser detectors, first and second reflected laser beam guide units, and a control unit. The control unit controls the heating laser beam source and the first and second correcting laser beam sources, measures a temperature rise characteristic that is a temperature rise state of a measurement spot based on a heating time, on the basis of a detection signal from the infrared detector and detection signals from the first and second correcting laser detectors, and determines a state of a measurement object based on the measured temperature rise characteristic. | 10-30-2014 |
20140339429 | OPTICAL NON-DESTRUCTIVE INSPECTION METHOD AND OPTICAL NON-DESTRUCTIVE INSPECTION APPARATUS - In an optical non-destructive inspection method which can perform inspection accurately in a short time. In the method, a heating laser beam source, at least one infrared detector, a control unit, and a storage unit are used. The storage unit stores a parameter state-time constant characteristic in which a parameter corresponding to a state of the measurement object is correlated with a time constant indicating the curve shape of the temperature rise characteristic that varies depending on the state of the parameter. The control unit determines the time constant based on the curve shape of the temperature rise characteristic, which extends from a heating start time point to a time point at which a saturated temperature is reached, and determines the state of the parameter of the measurement object based on the determined time constant and the parameter state-time constant characteristic. | 11-20-2014 |
20150355031 | OPTICAL NON-DESTRUCTIVE INSPECTION METHOD AND OPTICAL NON-DESTRUCTIVE INSPECTION APPARATUS - An optical non-destructive inspection method includes: heating including setting a measurement spot on a surface of a workpiece and irradiating the measurement spot with heating laser light using a heating laser light source, heat ray detectors, and a controller; acquiring a temperature rise property that is a temperature rise state of the measurement spot according to a heating time by detecting a heat ray radiated from the measurement spot to determine a temperature at the measurement spot; and determining whether or not a pressure contact state at pressure contact portions, which include a contact area and a contact pressure, is appropriate based on the temperature rise property. | 12-10-2015 |