Patent application number | Description | Published |
20090001407 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP - There is provided a semiconductor light-emitting device having excellent light extraction efficiency, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device | 01-01-2009 |
20090008672 | LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP - There is provided a light-emitting device having high reliability and excellent light extraction efficiency, a manufacturing method thereof, and a lamp. A light-emitting device includes a transparent electrode, wherein a titanium oxide-based conductive film is used for at least one layer of said transparent electrode, an emission wavelength is within a range of 300 to 550 nm, and a photocatalytic reaction-prevention layer is formed so as to cover said titanium oxide-based conductive film. | 01-08-2009 |
20090090922 | METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (Vf) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide film | 04-09-2009 |
20090179220 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - The present invention provides a semiconductor light-emitting device capable of effectively emitting ultraviolet light and a method of manufacturing the same. | 07-16-2009 |
20090205707 | SOLAR CELL AND METHOD FOR PRODUCING THE SAME - The object of the present invention is to provide a solar cell which is industrially beneficial and has high light conversion efficiency; and a method for producing a solar cell; and the present invention provides a solar cell comprising a substrate, a power generation layer for converting received light into electrical power, a translucent electrode, and another electrode, when light travels through each member from a first surface thereof, a surface opposite to the first surface is defined as a second surface, the power generation layer is formed at a second surface side of the substrate, the translucent electrode is formed on one surface of the power generation layer, and another electrode is formed on the other surface of the power generation layer, wherein the translucent electrode comprises hexagonal In | 08-20-2009 |
20100051981 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP - There is provided a semiconductor light-emitting device having excellent light extraction efficiency and low wavelength unevenness, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device includes an n-type semiconductor layer | 03-04-2010 |
20100052007 | LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP - The present invention provides a light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein the titanium oxide-based conductive film layer comprises a first layer as a light extraction layer and a second layer as a current diffusion layer, the second layer being arranged on the p-type semiconductor layer side of the first layer, a method of manufacturing a light-emitting device, and a lamp. | 03-04-2010 |
20100163886 | GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND LAMP INCLUDING THE SAME - The present invention provides a gallium nitride compound semiconductor light-emitting device that prevents an increase in the specific resistance of a p-type semiconductor layer due to hydrogen annealing and reduces the specific resistance of a translucent conductive oxide film to lower a driving voltage Vf, a method of manufacturing the same, and a lamp including the same. The method of manufacturing the gallium nitride compound semiconductor light-emitting device includes: forming a positive electrode | 07-01-2010 |
20100295086 | COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME, CONDUCTIVE TRANSLUCENT ELECTRODE FOR COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LAMP, ELECTRONIC DEVICE, AND MECHANICAL APPARATUS - The invention provides a compound semiconductor light-emitting element including: a substrate on which an n-type semiconductor layer ( | 11-25-2010 |
20110068349 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND LAMP - A semiconductor light-emitting device ( | 03-24-2011 |
20120228665 | METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (VI) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide film ( | 09-13-2012 |